JP2010114082A5 - - Google Patents

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Publication number
JP2010114082A5
JP2010114082A5 JP2009253386A JP2009253386A JP2010114082A5 JP 2010114082 A5 JP2010114082 A5 JP 2010114082A5 JP 2009253386 A JP2009253386 A JP 2009253386A JP 2009253386 A JP2009253386 A JP 2009253386A JP 2010114082 A5 JP2010114082 A5 JP 2010114082A5
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JP
Japan
Prior art keywords
gas
ion beam
emitter tip
emitter
tip temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009253386A
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English (en)
Japanese (ja)
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JP5087601B2 (ja
JP2010114082A (ja
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Publication date
Priority claimed from US12/264,859 external-priority patent/US8026492B2/en
Priority claimed from EP08168304.7A external-priority patent/EP2182542B1/en
Application filed filed Critical
Publication of JP2010114082A publication Critical patent/JP2010114082A/ja
Publication of JP2010114082A5 publication Critical patent/JP2010114082A5/ja
Application granted granted Critical
Publication of JP5087601B2 publication Critical patent/JP5087601B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009253386A 2008-11-04 2009-11-04 デュアルモードのガス電界イオン源 Active JP5087601B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP08168304.7 2008-11-04
US12/264,859 US8026492B2 (en) 2008-11-04 2008-11-04 Dual mode gas field ion source
EP08168304.7A EP2182542B1 (en) 2008-11-04 2008-11-04 Method of operating a focused ion beam device with a dual mode gas field ion source
US12/264,859 2008-11-04

Publications (3)

Publication Number Publication Date
JP2010114082A JP2010114082A (ja) 2010-05-20
JP2010114082A5 true JP2010114082A5 (enExample) 2012-01-12
JP5087601B2 JP5087601B2 (ja) 2012-12-05

Family

ID=42302457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009253386A Active JP5087601B2 (ja) 2008-11-04 2009-11-04 デュアルモードのガス電界イオン源

Country Status (1)

Country Link
JP (1) JP5087601B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6894486B2 (ja) * 2016-07-05 2021-06-30 株式会社日立ハイテクサイエンス イオンビーム装置
JP6909618B2 (ja) 2017-04-19 2021-07-28 株式会社日立ハイテクサイエンス イオンビーム装置
WO2020044429A1 (ja) * 2018-08-28 2020-03-05 株式会社日立ハイテクノロジーズ イオンビーム装置
JP7535195B2 (ja) * 2021-09-13 2024-08-15 株式会社日立ハイテク イオンビーム装置、エミッタティップ加工方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6056342A (ja) * 1983-09-08 1985-04-01 Anelva Corp イオンビ−ム発生装置
JPH02284335A (ja) * 1989-04-24 1990-11-21 Sony Corp ガスフェーズ型集束イオンビーム装置
JP2007227102A (ja) * 2006-02-22 2007-09-06 Kobe Steel Ltd イオン源
EP2019412B1 (en) * 2006-12-18 2016-08-24 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Gas field ion source for multiple applications

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