JP5087601B2 - デュアルモードのガス電界イオン源 - Google Patents
デュアルモードのガス電界イオン源 Download PDFInfo
- Publication number
- JP5087601B2 JP5087601B2 JP2009253386A JP2009253386A JP5087601B2 JP 5087601 B2 JP5087601 B2 JP 5087601B2 JP 2009253386 A JP2009253386 A JP 2009253386A JP 2009253386 A JP2009253386 A JP 2009253386A JP 5087601 B2 JP5087601 B2 JP 5087601B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- ion beam
- emitter
- emitter tip
- beam device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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- 239000007789 gas Substances 0.000 claims description 466
- 238000010884 ion-beam technique Methods 0.000 claims description 152
- 150000002500 ions Chemical class 0.000 claims description 79
- 238000000605 extraction Methods 0.000 claims description 70
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 65
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 45
- 239000002245 particle Substances 0.000 claims description 41
- 229910052734 helium Inorganic materials 0.000 claims description 39
- 239000001307 helium Substances 0.000 claims description 38
- 229910052786 argon Inorganic materials 0.000 claims description 31
- 238000010438 heat treatment Methods 0.000 claims description 30
- 239000000203 mixture Substances 0.000 claims description 26
- 229910052739 hydrogen Inorganic materials 0.000 claims description 20
- 239000001257 hydrogen Substances 0.000 claims description 20
- 238000004544 sputter deposition Methods 0.000 claims description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 10
- 230000004048 modification Effects 0.000 claims description 9
- 238000012986 modification Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 150000002431 hydrogen Chemical class 0.000 claims description 8
- 229910052754 neon Inorganic materials 0.000 claims description 8
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 8
- 229910052743 krypton Inorganic materials 0.000 claims description 7
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 4
- 239000012495 reaction gas Substances 0.000 claims description 4
- 230000005684 electric field Effects 0.000 description 55
- 238000001816 cooling Methods 0.000 description 22
- -1 helium ions Chemical class 0.000 description 18
- 238000010586 diagram Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 6
- 230000003750 conditioning effect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 239000011859 microparticle Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000000752 ionisation method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000011163 secondary particle Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XWVPESVIQGFWQI-UHFFFAOYSA-N [N+](=O)([O-])[Sn] Chemical compound [N+](=O)([O-])[Sn] XWVPESVIQGFWQI-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000105 evaporative light scattering detection Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000000155 isotopic effect Effects 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Landscapes
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP08168304.7 | 2008-11-04 | ||
| EP08168304.7A EP2182542B1 (en) | 2008-11-04 | 2008-11-04 | Method of operating a focused ion beam device with a dual mode gas field ion source |
| US12/264,859 | 2008-11-04 | ||
| US12/264,859 US8026492B2 (en) | 2008-11-04 | 2008-11-04 | Dual mode gas field ion source |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010114082A JP2010114082A (ja) | 2010-05-20 |
| JP2010114082A5 JP2010114082A5 (enExample) | 2012-01-12 |
| JP5087601B2 true JP5087601B2 (ja) | 2012-12-05 |
Family
ID=42302457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009253386A Active JP5087601B2 (ja) | 2008-11-04 | 2009-11-04 | デュアルモードのガス電界イオン源 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5087601B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6894486B2 (ja) * | 2016-07-05 | 2021-06-30 | 株式会社日立ハイテクサイエンス | イオンビーム装置 |
| JP6909618B2 (ja) * | 2017-04-19 | 2021-07-28 | 株式会社日立ハイテクサイエンス | イオンビーム装置 |
| WO2020044429A1 (ja) * | 2018-08-28 | 2020-03-05 | 株式会社日立ハイテクノロジーズ | イオンビーム装置 |
| JP7535195B2 (ja) * | 2021-09-13 | 2024-08-15 | 株式会社日立ハイテク | イオンビーム装置、エミッタティップ加工方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6056342A (ja) * | 1983-09-08 | 1985-04-01 | Anelva Corp | イオンビ−ム発生装置 |
| JPH02284335A (ja) * | 1989-04-24 | 1990-11-21 | Sony Corp | ガスフェーズ型集束イオンビーム装置 |
| JP2007227102A (ja) * | 2006-02-22 | 2007-09-06 | Kobe Steel Ltd | イオン源 |
| EP1936653B1 (en) * | 2006-12-18 | 2014-01-15 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Gas field ion source for multiple applications |
-
2009
- 2009-11-04 JP JP2009253386A patent/JP5087601B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010114082A (ja) | 2010-05-20 |
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