JP2008508684A5 - - Google Patents
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- Publication number
- JP2008508684A5 JP2008508684A5 JP2007523742A JP2007523742A JP2008508684A5 JP 2008508684 A5 JP2008508684 A5 JP 2008508684A5 JP 2007523742 A JP2007523742 A JP 2007523742A JP 2007523742 A JP2007523742 A JP 2007523742A JP 2008508684 A5 JP2008508684 A5 JP 2008508684A5
- Authority
- JP
- Japan
- Prior art keywords
- sample
- ion
- ion beam
- computer
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010884 ion-beam technique Methods 0.000 claims description 29
- 150000002500 ions Chemical class 0.000 claims description 22
- 238000000034 method Methods 0.000 claims 36
- 238000003384 imaging method Methods 0.000 claims 11
- 238000001816 cooling Methods 0.000 claims 4
- 238000004891 communication Methods 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 238000003801 milling Methods 0.000 claims 3
- 238000007789 sealing Methods 0.000 claims 3
- 238000000992 sputter etching Methods 0.000 claims 3
- 238000010792 warming Methods 0.000 claims 3
- 230000005596 ionic collisions Effects 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 2
- 239000002826 coolant Substances 0.000 claims 1
- 230000000977 initiatory effect Effects 0.000 claims 1
- 238000010849 ion bombardment Methods 0.000 claims 1
- 238000012544 monitoring process Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- ZCUFMDLYAMJYST-UHFFFAOYSA-N thorium dioxide Chemical compound O=[Th]=O ZCUFMDLYAMJYST-UHFFFAOYSA-N 0.000 description 1
- 229910003452 thorium oxide Inorganic materials 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/903,657 US7132673B2 (en) | 2004-07-30 | 2004-07-30 | Device and method for milling of material using ions |
| PCT/US2005/026542 WO2006014986A2 (en) | 2004-07-30 | 2005-07-27 | Device and method for milling of material using ions |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008508684A JP2008508684A (ja) | 2008-03-21 |
| JP2008508684A5 true JP2008508684A5 (enExample) | 2013-03-07 |
Family
ID=35731079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007523742A Pending JP2008508684A (ja) | 2004-07-30 | 2005-07-27 | イオンを利用して材料をミリング処理する装置及び方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US7132673B2 (enExample) |
| EP (1) | EP1803140B1 (enExample) |
| JP (1) | JP2008508684A (enExample) |
| WO (1) | WO2006014986A2 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4302933B2 (ja) * | 2002-04-22 | 2009-07-29 | 株式会社日立ハイテクノロジーズ | イオンビームによる穴埋め方法及びイオンビーム装置 |
| US7075094B2 (en) * | 2004-08-30 | 2006-07-11 | Hitachi Global Storage Technologies Netherlands B.V. | System, method, and apparatus for ion beam etching process stability using a reference for time scaling subsequent steps |
| KR100615587B1 (ko) * | 2004-11-25 | 2006-08-25 | 삼성전자주식회사 | 이온주입장치의 패러데이 어셈블리 |
| US7520913B2 (en) | 2005-02-04 | 2009-04-21 | Donaldson Company, Inc. | Non-cylindrical filter elements, and methods |
| JP2007225363A (ja) * | 2006-02-22 | 2007-09-06 | Hitachi Ltd | 磁気試料検査装置 |
| US7935942B2 (en) * | 2006-08-15 | 2011-05-03 | Varian Semiconductor Equipment Associates, Inc. | Technique for low-temperature ion implantation |
| US7834315B2 (en) * | 2007-04-23 | 2010-11-16 | Omniprobe, Inc. | Method for STEM sample inspection in a charged particle beam instrument |
| US9312097B2 (en) * | 2007-05-09 | 2016-04-12 | Protochips, Inc. | Specimen holder used for mounting samples in electron microscopes |
| US7638781B2 (en) * | 2007-10-22 | 2009-12-29 | Varian Semiconductor Equipment Associates, Inc. | Local pressure sensing in a plasma processing system |
| EP2260286A4 (en) * | 2008-03-17 | 2012-04-11 | Protochips Inc | SPECIMEN HOLDER FOR MOUNTING SAMPLES IN ELECTRONIC MICROSCOPES |
| DE102008052006B4 (de) * | 2008-10-10 | 2018-12-20 | 3D-Micromac Ag | Verfahren und Vorrichtung zur Herstellung von Proben für die Transmissionselektronenmikroskopie |
| JP5250470B2 (ja) * | 2009-04-22 | 2013-07-31 | 株式会社日立ハイテクノロジーズ | 試料ホールダ，該試料ホールダの使用法、及び荷電粒子装置 |
| JP5094788B2 (ja) * | 2009-06-18 | 2012-12-12 | 株式会社日立製作所 | 電子顕微鏡及びその試料ホルダ |
| WO2011011661A2 (en) * | 2009-07-24 | 2011-01-27 | Omniprobe, Inc. | Method and apparatus for the monitoring of sample milling in a charged particle instrument |
| CN101988874B (zh) * | 2009-07-31 | 2012-01-25 | 清华大学 | 透射电镜试样制备方法 |
| WO2011127394A1 (en) * | 2010-04-09 | 2011-10-13 | E.A. Fischione Instruments, Inc. | Improved ion source |
| WO2012177900A1 (en) | 2011-06-22 | 2012-12-27 | Research Triangle Institute, International | Bipolar microelectronic device |
| US8440982B1 (en) * | 2011-12-19 | 2013-05-14 | Korea Basic Science Institute | Cryo transfer holder for transmission electron microscope |
| DE102012202519A1 (de) | 2012-02-17 | 2013-08-22 | Carl Zeiss Microscopy Gmbh | Verfahren und Vorrichtungen zur Präparation mikroskopischer Proben mit Hilfe von gepulstem Licht |
| US10110854B2 (en) * | 2012-07-27 | 2018-10-23 | Gatan, Inc. | Ion beam sample preparation apparatus and methods |
| EP3477680B1 (en) * | 2017-10-30 | 2022-12-28 | Gatan, Inc. | Cryotransfer holder and workstation |
| NL2020235B1 (en) * | 2018-01-05 | 2019-07-12 | Hennyz B V | Vacuum transfer assembly |
| WO2022004514A1 (ja) * | 2020-07-03 | 2022-01-06 | 株式会社メルビル | 試料ホルダー |
| CN112837987B (zh) * | 2020-12-30 | 2023-04-14 | 四川红华实业有限公司 | 一种可调式带屏蔽盒结构 |
| US12362130B2 (en) | 2021-02-15 | 2025-07-15 | E.A. Fischione Instruments, Inc. | System and method for uniform ion milling |
| CN116136466A (zh) | 2021-11-16 | 2023-05-19 | 爱思开海力士有限公司 | 分析用样本的自动化处理的系统及使用其的样本处理方法 |
| US12165833B2 (en) * | 2022-05-19 | 2024-12-10 | Fei Company | System and methods for automated processing of multiple samples in a BIB system |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4633084A (en) * | 1985-01-16 | 1986-12-30 | The United States Of America As Represented By The United States Department Of Energy | High efficiency direct detection of ions from resonance ionization of sputtered atoms |
| JPH02112134A (ja) * | 1988-10-21 | 1990-04-24 | Nippon Telegr & Teleph Corp <Ntt> | マイクロ波イオン銃 |
| US5104684A (en) * | 1990-05-25 | 1992-04-14 | Massachusetts Institute Of Technology | Ion beam induced deposition of metals |
| JPH08111200A (ja) * | 1994-10-07 | 1996-04-30 | Hitachi Ltd | 走査形電子顕微鏡 |
| DE29507225U1 (de) * | 1995-04-29 | 1995-07-13 | Grünewald, Wolfgang, Dr.rer.nat., 09122 Chemnitz | Ionenstrahlpräparationsvorrichtung für die Elektronenmikroskopie |
| DE59605446D1 (de) * | 1995-07-25 | 2000-07-20 | Nmi Univ Tuebingen | Verfahren und vorrichtung zur ionendünnung in einem hochauflösenden transmissionselektronenmikroskop |
| US5633502A (en) * | 1995-08-11 | 1997-05-27 | E. A. Fischione Instruments, Inc. | Plasma processing system for transmission electron microscopy specimens and specimen holders |
| JPH11132920A (ja) * | 1997-10-30 | 1999-05-21 | Matsushita Electron Corp | イオンミリング装置 |
| JP2949102B1 (ja) * | 1998-04-24 | 1999-09-13 | 株式会社オメガトロン | ビーム発生装置 |
| US6756600B2 (en) * | 1999-02-19 | 2004-06-29 | Advanced Micro Devices, Inc. | Ion implantation with improved ion source life expectancy |
| KR100380660B1 (ko) * | 2000-11-22 | 2003-04-18 | 학교법인 성균관대학 | 중성빔을 이용한 반도체소자의 식각방법 및 이를 위한식각장치 |
| US6514866B2 (en) * | 2001-01-12 | 2003-02-04 | North Carolina State University | Chemically enhanced focused ion beam micro-machining of copper |
| US6838380B2 (en) * | 2001-01-26 | 2005-01-04 | Fei Company | Fabrication of high resistivity structures using focused ion beams |
| JP4200665B2 (ja) * | 2001-05-08 | 2008-12-24 | 株式会社日立製作所 | 加工装置 |
| US6730237B2 (en) * | 2001-06-22 | 2004-05-04 | International Business Machines Corporation | Focused ion beam process for removal of copper |
| EP1585999A4 (en) * | 2002-08-02 | 2008-09-17 | E A Fischione Instr Inc | METHOD AND DEVICE FOR PREPARING SAMPLES FOR MICROSCOPY |
| US7611610B2 (en) * | 2003-11-18 | 2009-11-03 | Fei Company | Method and apparatus for controlling topographical variation on a milled cross-section of a structure |
-
2004
- 2004-07-30 US US10/903,657 patent/US7132673B2/en not_active Expired - Lifetime
-
2005
- 2005-07-27 WO PCT/US2005/026542 patent/WO2006014986A2/en not_active Ceased
- 2005-07-27 EP EP05776553.9A patent/EP1803140B1/en not_active Expired - Lifetime
- 2005-07-27 JP JP2007523742A patent/JP2008508684A/ja active Pending
-
2006
- 2006-09-20 US US11/523,979 patent/US7504623B2/en not_active Expired - Lifetime
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