JP2010093234A - 液晶表示装置用アレイ基板及びその製造方法、液晶表示装置 - Google Patents
液晶表示装置用アレイ基板及びその製造方法、液晶表示装置 Download PDFInfo
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000013078 crystal Substances 0.000 title 1
- 239000012530 fluid Substances 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000010410 layer Substances 0.000 claims description 60
- 239000010408 film Substances 0.000 claims description 57
- 239000010409 thin film Substances 0.000 claims description 55
- 230000000903 blocking effect Effects 0.000 claims description 40
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- 238000000034 method Methods 0.000 claims description 19
- 239000011159 matrix material Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000011651 chromium Substances 0.000 claims description 13
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- ZPZCREMGFMRIRR-UHFFFAOYSA-N molybdenum titanium Chemical compound [Ti].[Mo] ZPZCREMGFMRIRR-UHFFFAOYSA-N 0.000 claims description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 229910000583 Nd alloy Inorganic materials 0.000 claims description 6
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910001257 Nb alloy Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- DTSBBUTWIOVIBV-UHFFFAOYSA-N molybdenum niobium Chemical compound [Nb].[Mo] DTSBBUTWIOVIBV-UHFFFAOYSA-N 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000001681 protective effect Effects 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract 3
- 239000007788 liquid Substances 0.000 abstract 2
- 238000003384 imaging method Methods 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 210000002858 crystal cell Anatomy 0.000 description 11
- 239000012535 impurity Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
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Abstract
【解決手段】本発明に係る液晶表示装置用アレイ基板及びその製造方法、これを具備した液晶表示装置は、光漏洩電流を減少させることができる遮断膜(Shielding Metal)を利用して光損失を除去することで、光漏洩電流を最小化して画質を向上させることができる。
【選択図】図2
Description
図1は、本発明の実施の形態1に係る液晶表示装置用アレイ基板の一部を示す図面である。
Claims (8)
- 基板と、
前記基板上に形成されたゲート電極と、
前記ゲート電極が形成された基板上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜が形成された基板上に、前記ゲート電極と対応するように形成された半導体層と、
前記半導体層が形成された基板上に、互いに離隔して形成されたソース電極及びドレーン電極と、
前記ソース電極及びドレーン電極が形成された基板の全面に形成された保護層と、
前記保護層上に前記ゲート電極と対応するように形成された遮断膜と、
前記保護層上で前記遮断膜と離隔され、コンタクトホールを通じて前記ドレーン電極と電気的に接続される画素電極と、を含む
ことを特徴とする液晶表示装置用アレイ基板。 - 前記遮断膜は、前記半導体層のチャンネル部に光が流入することを遮断する
ことを特徴とする請求項1に記載の液晶表示装置用アレイ基板。 - 前記遮断膜は、酸化インジウムスズ(ITO)、酸化インジウム亜鉛(IZO)、チタンモリブデン合金(Titanium Molybdenum Alloy)、銅(Cu)、モリブデンニオブ合金(MoNb)、モリブデン(Mo)、クロム(Cr)、アルミニウムネオジム合金(AlNd)中の1つの金属から形成される
ことを特徴とする請求項1に記載の液晶表示装置用アレイ基板。 - 基板を準備する段階と、
前記基板上にゲート電極を形成する第1マスク工程段階と、
前記ゲート電極が形成された基板上にゲート絶縁膜を形成する段階と、
前記ゲート絶縁膜が形成された基板上に、前記ゲート電極と対応するようにアクティブ層、前記アクティブ層上に互いに離隔されたソース電極及びドレーン電極、並びに前記ソース電極及びドレーン電極と前記アクティブ層との間にオーミックコンタクト層を形成する第2マスク工程段階と、
前記ソース電極及びドレーン電極と前記オーミックコンタクト層とが形成された基板上に保護層を形成する段階と、
前記ドレーン電極の一部が露出するように、前記保護層上にコンタクトホールを形成する第3マスク工程段階と、
前記保護層上に、前記コンタクトホールを通じて前記ドレーン電極と電気的に接続される画素電極、及び前記画素電極と同時に形成されて前記ゲート電極と対応するように配置される遮断膜を形成する第4マスク工程段階と、を含む
ことを特徴とする液晶表示装置用アレイ基板の製造方法。 - 前記遮断膜は、酸化インジウムスズ(ITO)、酸化インジウム亜鉛(IZO)、チタンモリブデン合金(Titanium Molybdenum Alloy)、銅(Cu)、モリブデンニオブ合金(MoNb)、モリブデン(Mo)、クロム(Cr)、アルミニウムネオジム合金(AlNd)中の1つの金属から形成される
ことを特徴とする請求項4に記載の液晶表示装置用アレイ基板の製造方法。 - 前記遮断膜は、前記アクティブ層に光が流入することを遮断する
ことを特徴とする請求項4に記載の液晶表示装置用アレイ基板の製造方法。 - 液晶パネルと、
前記液晶パネルに光を照射する光源と、を備え、
前記液晶パネルは、
ゲート電極と、前記ゲート電極上に形成されたゲート絶縁膜と、前記ゲート絶縁膜上に前記ゲート電極と対応するように形成された半導体層と、前記半導体層上に互いに離隔して形成されたソース電極及びドレーン電極と、前記ソース電極及びドレーン電極上に形成された保護層と、前記保護層上にコンタクトホールを通じて前記ドレーン電極と電気的に接続される画素電極と、前記保護層上に前記画素電極と同時に形成されて前記ゲート電極と対応するように配置される遮断膜とから構成された薄膜トランジスタを具備した第1基板と、
前記第1基板と対向し、カラーフィルタ及びブラックマトリックスを含む第2基板と、
前記第1基板と第2基板との間に形成された液晶層と、を含み、
前記遮断膜は、前記光源から出射された光が前記第2基板のカラーフィルタ、ブラックマトリックス及び液晶層に反射されて、前記半導体層のチャンネル部に流入することを遮断する
ことを特徴とする液晶表示装置。 - 前記遮断膜は、酸化インジウムスズ(ITO)、酸化インジウム亜鉛(IZO)、チタンモリブデン合金(Titanium Molybdenum Alloy)、銅(Cu)、モリブデンニオブ合金(MoNb)、モリブデン(Mo)、クロム(Cr)、アルミニウムネオジム合金(AlNd)中の1つの金属から形成される
ことを特徴とする請求項7に記載の液晶表示装置。
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KR1020080099401A KR101337195B1 (ko) | 2008-10-10 | 2008-10-10 | 액정표시장치용 어레이기판 및 그의 제조방법, 이를 구비한액정표시장치 |
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JP2016212292A (ja) * | 2015-05-11 | 2016-12-15 | 株式会社 オルタステクノロジー | 液晶表示装置及びヘッドアップディスプレイ装置 |
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Also Published As
Publication number | Publication date |
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KR101337195B1 (ko) | 2013-12-05 |
US20100091212A1 (en) | 2010-04-15 |
KR20100040353A (ko) | 2010-04-20 |
US8879012B2 (en) | 2014-11-04 |
CN101726947B (zh) | 2012-01-25 |
CN101726947A (zh) | 2010-06-09 |
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