CN105652548A - 一种阵列基板及液晶显示面板 - Google Patents

一种阵列基板及液晶显示面板 Download PDF

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CN105652548A
CN105652548A CN201610207446.0A CN201610207446A CN105652548A CN 105652548 A CN105652548 A CN 105652548A CN 201610207446 A CN201610207446 A CN 201610207446A CN 105652548 A CN105652548 A CN 105652548A
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metal level
array substrate
insulation layer
protective belt
layer
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王勐
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to PCT/CN2016/082951 priority patent/WO2017173713A1/zh
Priority to US15/124,365 priority patent/US20180149934A1/en
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Abstract

本发明提供一种阵列基板及液晶显示面板，所述阵列基板包括：依次设置的衬底基板、第一金属层、栅绝缘层、有源层、第二金属层、第一绝缘层、第三金属层；第一金属层包括薄膜晶体管的栅极区；有源层用于形成沟道；所述第二金属层包括所述薄膜晶体管的漏极区和源极区；所述第三金属层包括光照保护区，所述光照保护区与所述沟道的位置相对应。本发明的阵列基板及液晶显示面板，由于在于沟道对应的位置上设置光照保护区，从而避免沟道受到紫外光照射，提高了薄膜晶体管的充电性能。

Description

一种阵列基板及液晶显示面板
【技术领域】
本发明涉及液晶显示器技术领域，特别是涉及一种阵列基板及液晶显示面板。
【背景技术】
现有液晶显示面板包括阵列基板和彩膜基板，阵列基板上设置有薄膜晶体管，薄膜晶体管包括栅极，源极和漏极以及有源层(用于形成沟道)，该有缘层的材料为氧化物半导体材料。
现有液晶显示面板的制作过程中，不可避免地用到紫外光照射，由于氧化物半导体材料在受到紫外光照射时，会降低薄膜晶体管的充电性能，如图1所示，给出光照前的薄膜晶体管的充电性能，如图2所示，给出光照后的薄膜晶体管的充电性能，图1和图2中横坐标表示电压值，纵坐标表示电容值，对比两张图，不难发现，薄膜晶体管的阈值电压变小，也即充电性能下降，降低了显示效果。
因此，有必要提供一种阵列基板及液晶显示面板，以解决现有技术所存在的问题。
【发明内容】
本发明的目的在于提供一种阵列基板及液晶显示面板，以解决现有技术的薄膜晶体管的沟道在紫外光照射下，导致其充电性能降低，显示效果差的技术问题。
为解决上述技术问题，本发明构造了一种阵列基板，其包括：
衬底基板；
第一金属层，位于所述衬底基板上，包括薄膜晶体管的栅极区；
栅绝缘层，部分位于所述第一金属层上，用于隔离所述第一金属层和第二金属层；
有源层，部分位于所述栅绝缘层上，用于形成沟道；
所述第二金属层，位于所述有源层上，包括所述薄膜晶体管的漏极区和源极区；
第一绝缘层，位于所述第二金属层上；以及
第三金属层，位于所述第一绝缘层上，所述第三金属层包括光照保护区，所述光照保护区与所述沟道的位置相对应。
在本发明的阵列基板中，所述第三金属层还包括像素电极，所述光照保护区与所述像素电极是在同一制程工序中得到的。
在本发明的阵列基板中，所述阵列基板还包括透明导电层，所述透明导电层位于所述第三金属层上，所述透明导电层包括像素电极。
在本发明的阵列基板中，所述光照保护区在所述衬底基板上的投影面积略大于所述沟道在所述衬底基板上的投影面积。
在本发明的阵列基板中，所述阵列基板还包括平坦层，所述平坦层位于所述第三金属层上。
本发明还提供一种液晶显示面板，其包括：
彩膜基板，与阵列基板相对设置；
液晶层，位于所述彩膜基板和所述阵列基板之间，以及
所述阵列基板，其包括：
衬底基板；
第一金属层，位于所述衬底基板上，包括薄膜晶体管的栅极区；
栅绝缘层，部分位于所述第一金属层上，用于隔离所述第一金属层和第二金属层；
有源层，部分位于所述栅绝缘层上，用于形成沟道；
所述第二金属层，位于所述有源层上，包括所述薄膜晶体管的漏极区和源极区；
第一绝缘层，位于所述第二金属层上；以及
第三金属层，位于所述第一绝缘层上，所述第三金属层包括光照保护区，所述光照保护区与所述沟道的位置相对应。
在本发明的液晶显示面板中，所述第三金属层还包括像素电极，所述光照保护区与所述像素电极是在同一制程工序中得到的。
在本发明的液晶显示面板中，所述阵列基板还包括透明导电层，所述透明导电层位于所述第三金属层上，所述透明导电层包括像素电极。
在本发明的液晶显示面板中，所述光照保护区在所述衬底基板上的投影面积略大于所述沟道在所述衬底基板上的投影面积。
在本发明的液晶显示面板中，所述阵列基板还包括平坦层，所述平坦层位于所述第三金属层上。
本发明的阵列基板及液晶显示面板，由于在于沟道对应的位置上设置光照保护区，从而避免沟道受到紫外光照射，提高了薄膜晶体管的充电性能和显示效果。
【附图说明】
图1为现有技术光照前的薄膜晶体管的充电性能示意图；
图2为现有技术光照后的薄膜晶体管的充电性能示意图；
图3为本发明阵列基板的结构示意图；
图4为本发明阵列基板的俯视图。
【具体实施方式】
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
请参照图3，图3为本发明阵列基板的结构示意图。
本发明的阵列基板10，如图3所示，包括衬底基板11、第一金属层12、栅绝缘层13、有源层14、第二金属层15、第一绝缘层16，第三金属层17，还可以包括欧姆接触层(图中未示出)；
所述第一金属层12位于所述衬底基板11上，包括薄膜晶体管的栅极区，对所述第一金属层12进行图形化处理形成栅极，所述栅极区部分以外的第一金属层在制程过程中被刻蚀掉；所述第一金属层12的材料可为铬、钼、铝或铜等。
为了隔离所述第一金属层12和所述第二金属层15、以及隔离所述第一金属层12和有源层14，在所述第一金属层12上设置所述栅绝缘层13，仅在所述第一金属层12的栅极区设置有所述栅绝缘层13，其余所述栅绝缘层13设置在所述衬底基板上。所述有源层14部分位于所述栅绝缘层13上，用于形成所述薄膜晶体管的漏极和源极之间的沟道；
所述欧姆接触层可位于所述有源层14上，用于在所述薄膜晶体管的栅极闭合时，导通源极和漏极。所述欧姆接触层的材料可为氮化硅。
所述第二金属层15位于所述欧姆接触层上，包括薄膜晶体管的漏极区151和源极区152以及数据线；对所述第二金属层15进行图形化处理形成漏极151和源极152、以及数据线；所述漏极和源极以及数据线以外的第二金属层在制程过程中被刻蚀掉。
所述第一绝缘层16用于隔离所述第二金属层15和第三金属层17；其中对所述第三金属层17进行图形化处理得到光照保护区；所述光照保护区与所述沟道的位置相对应，也即可以将第三金属层17中与沟道的位置相对应以外的部分刻蚀掉，仅保留光照保护区。
优选地，所述光照保护区在所述衬底基板11上的投影面积略大于所述沟道在所述衬底基板11上的投影面积。也即在竖直投影方向上，光照保护区的面积大于所述沟道的面积，从而能更好地防止沟道受到紫外光照射。
此外，由于在现有阵列基板的基础上，增加了第一绝缘层16和第三金属层17，使得阵列基板的整体厚度增加，从而可以降低寄生电容，进一步提高了显示效果。
该光照保护区用于防止沟道受到紫外光的照射，从而很好地防止降低薄膜晶体管的充电性能。
当然可以理解的是，上述结构可以应用在FFS型面板中。当用在FFS型面板中时，可以在所述第三金属层17上制作透明导电层，所述透明导电层包括像素电极，可以利用溅射镀膜法形成所述透明导电层，所述像素电极与所述漏极之间通过过孔连接。
当然，为了使液晶显示面板的显示效果更佳，还可以在透明导电层上设置平坦层。当阵列基板的表面更加平整时，使液晶分子扩散更加均匀，同时有利于在制作液晶显示面板过程中，获取更加准确的最佳液晶量(液晶显示面板达到最佳显示效果，所需要的液晶分子的数量)。
当然可以理解的是，为了进一步降低生产成本，上述结构可以应用在IPS型面板中。当用在IPS型面板中时，如图4所示，对所述第三金属层17进行图形化处理分别形成光照保护区21和像素电极22，其中光照保护区21位于所述沟道上，由于像素电极和光照保护区在同一制程工艺中制得，从而降低生产成本。所述像素电极与所述漏极之间通过过孔连接。
为了使液晶显示面板的显示效果更佳，还可以在第三金属层17上设置平坦层。优选地，在平坦层上还可设置第一配向膜。当然所述阵列基板还包括扫描线，所述数据线和所述扫描线限定形成多个像素单元。
本发明的阵列基板，由于在于沟道对应的位置上设置光照保护区，从而避免沟道受到紫外光照射，提高了薄膜晶体管的充电性能。
本发明还提供一种液晶显示面板，其包括彩膜基板和阵列基板，以及位于阵列基板和彩膜基板之间的液晶层，彩膜基板可以包括色阻层和公共电极，本发明的阵列基板10，如图3所示，包括衬底基板11、第一金属层12、栅绝缘层13、有源层14、第二金属层15、第一绝缘层16，第三金属层17，还可以包括欧姆接触层(图中未示出)；
所述第一金属层12位于所述衬底基板11上，包括薄膜晶体管的栅极区，对所述第一金属层12进行图形化处理形成栅极，所述栅极区部分以外的第一金属层在制程过程中被刻蚀掉；所述第一金属层12的材料可为铬、钼、铝或铜等。
为了隔离所述第一金属层12和所述第二金属层15、以及隔离所述第一金属层12和有源层14，在所述第一金属层12上设置所述栅绝缘层13，仅在所述第一金属层12的栅极区设置有所述栅绝缘层13，其余所述栅绝缘层13设置在所述衬底基板上。所述有源层14部分位于所述栅绝缘层13上，用于形成所述薄膜晶体管的漏极和源极之间的沟道；
所述欧姆接触层可位于所述有源层14上，用于在所述薄膜晶体管的栅极闭合时，导通源极和漏极。所述欧姆接触层的材料可为氮化硅。
所述第二金属层15位于所述欧姆接触层上，包括薄膜晶体管的漏极区151和源极区152以及数据线；对所述第二金属层15进行图形化处理形成漏极151和源极152、以及数据线；所述漏极和源极以及数据线以外的第二金属层在制程过程中被刻蚀掉。
所述第一绝缘层16用于隔离所述第二金属层15和第三金属层17；其中对所述第三金属层17进行图形化处理得到光照保护区；所述光照保护区与所述沟道的位置相对应，也即可以将第三金属层17中与沟道的位置相对应以外的部分刻蚀掉，仅保留光照保护区。
优选地，所述光照保护区在所述衬底基板11上的投影面积略大于所述沟道在所述衬底基板11上的投影面积。也即在竖直投影方向上，光照保护区的面积大于所述沟道的面积，从而能更好地防止沟道受到紫外光照射。
此外，由于在现有阵列基板的基础上，增加了第一绝缘层16和第三金属层17，使得阵列基板的整体厚度增加，从而可以降低寄生电容，进一步提高了显示效果。
该光照保护区用于防止沟道受到紫外光的照射，从而很好地防止降低薄膜晶体管的充电性能。
当然可以理解的是，上述结构可以应用在FFS型面板中。当用在FFS型面板中时，可以在所述第三金属层17上制作透明导电层，所述透明导电层包括像素电极，可以利用溅射镀膜法形成所述透明导电层，所述像素电极与所述漏极之间通过过孔连接。
当然，为了使液晶显示面板的显示效果更佳，还可以在透明导电层上设置平坦层。当阵列基板的表面更加平整时，使液晶分子扩散更加均匀，同时有利于在制作液晶显示面板过程中，获取更加准确的最佳液晶量(液晶显示面板达到最佳显示效果，所需要的液晶分子的数量)。
当然可以理解的是，为了进一步降低生产成本，上述结构可以应用在IPS型面板中。当用在IPS型面板中时，如图4所示，对所述第三金属层17进行图形化处理分别形成光照保护区21和像素电极22，其中光照保护区21位于所述沟道上，由于像素电极和光照保护区在同一制程工艺中制得，从而降低生产成本。所述像素电极与所述漏极之间通过过孔连接。
为了使液晶显示面板的显示效果更佳，还可以在第三金属层17上设置平坦层。优选地，在平坦层上还可设置第一配向膜。当然所述阵列基板还包括扫描线，所述数据线和所述扫描线限定形成多个像素单元。
本发明的液晶显示面板，由于在于沟道对应的位置上设置光照保护区，从而避免沟道受到紫外光照射，提高了薄膜晶体管的充电性能。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (10)

1.一种阵列基板，其特征在于，包括：
衬底基板；
第一金属层，位于所述衬底基板上，包括薄膜晶体管的栅极区；
栅绝缘层，部分位于所述第一金属层上，用于隔离所述第一金属层和第二金属层；
有源层，部分位于所述栅绝缘层上，用于形成沟道；
所述第二金属层，位于所述有源层上，包括所述薄膜晶体管的漏极区和源极区；
第一绝缘层，位于所述第二金属层上；以及
第三金属层，位于所述第一绝缘层上，所述第三金属层包括光照保护区，所述光照保护区与所述沟道的位置相对应。
2.根据权利要求1所述的阵列基板，其特征在于，
所述第三金属层还包括像素电极，所述光照保护区与所述像素电极是在同一制程工序中得到的。
3.根据权利要求1所述的阵列基板，其特征在于，所述阵列基板还包括透明导电层，所述透明导电层位于所述第三金属层上，所述透明导电层包括像素电极。
4.根据权利要求1所述的阵列基板，其特征在于，
所述光照保护区在所述衬底基板上的投影面积略大于所述沟道在所述衬底基板上的投影面积。
5.根据权利要求1所述的阵列基板，其特征在于，
所述阵列基板还包括平坦层，所述平坦层位于所述第三金属层上。
6.一种液晶显示面板，其特征在于，包括：
彩膜基板，与阵列基板相对设置；
液晶层，位于所述彩膜基板和所述阵列基板之间，以及
所述阵列基板，其包括：
衬底基板；
第一金属层，位于所述衬底基板上，包括薄膜晶体管的栅极区；
栅绝缘层，部分位于所述第一金属层上，用于隔离所述第一金属层和第二金属层；
有源层，部分位于所述栅绝缘层上，用于形成沟道；
所述第二金属层，位于所述有源层上，包括所述薄膜晶体管的漏极区和源极区；
第一绝缘层，位于所述第二金属层上；以及
第三金属层，位于所述第一绝缘层上，所述第三金属层包括光照保护区，所述光照保护区与所述沟道的位置相对应。
7.根据权利要求6所述的液晶显示面板，其特征在于，
所述第三金属层还包括像素电极，所述光照保护区与所述像素电极是在同一制程工序中得到的。
8.根据权利要求6所述的液晶显示面板，其特征在于，所述阵列基板还包括透明导电层，所述透明导电层位于所述第三金属层上，所述透明导电层包括像素电极。
9.根据权利要求6所述的液晶显示面板，其特征在于，
所述光照保护区在所述衬底基板上的投影面积略大于所述沟道在所述衬底基板上的投影面积。
10.根据权利要求6所述的液晶显示面板，其特征在于，
所述阵列基板还包括平坦层，所述平坦层位于所述第三金属层上。
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CN101726947A (zh) * 2008-10-10 2010-06-09 乐金显示有限公司 用于液晶显示器件的阵列基板、其制造方法、以及具有其的液晶显示器件
CN103337497A (zh) * 2013-06-28 2013-10-02 北京京东方光电科技有限公司 一种阵列基板及其制造方法、显示装置
CN104952881A (zh) * 2015-05-06 2015-09-30 合肥京东方光电科技有限公司 薄膜晶体管及制备方法、阵列基板及制备方法、显示装置

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