JP2010077452A5 - - Google Patents

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Publication number
JP2010077452A5
JP2010077452A5 JP2008215386A JP2008215386A JP2010077452A5 JP 2010077452 A5 JP2010077452 A5 JP 2010077452A5 JP 2008215386 A JP2008215386 A JP 2008215386A JP 2008215386 A JP2008215386 A JP 2008215386A JP 2010077452 A5 JP2010077452 A5 JP 2010077452A5
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JP
Japan
Prior art keywords
electrode
substrate
substrate potential
frequency sputtering
mounting table
Prior art date
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Application number
JP2008215386A
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English (en)
Japanese (ja)
Other versions
JP5190316B2 (ja
JP2010077452A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2008215386A external-priority patent/JP5190316B2/ja
Priority to JP2008215386A priority Critical patent/JP5190316B2/ja
Priority to PCT/JP2008/065485 priority patent/WO2009044597A1/ja
Priority to KR1020107007282A priority patent/KR101229473B1/ko
Priority to CN2008801103366A priority patent/CN101821424B/zh
Priority to US12/727,316 priority patent/US9017535B2/en
Publication of JP2010077452A publication Critical patent/JP2010077452A/ja
Publication of JP2010077452A5 publication Critical patent/JP2010077452A5/ja
Publication of JP5190316B2 publication Critical patent/JP5190316B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008215386A 2007-10-04 2008-08-25 高周波スパッタリング装置 Active JP5190316B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008215386A JP5190316B2 (ja) 2007-10-04 2008-08-25 高周波スパッタリング装置
PCT/JP2008/065485 WO2009044597A1 (ja) 2007-10-04 2008-08-29 高周波スパッタリング装置
KR1020107007282A KR101229473B1 (ko) 2007-10-04 2008-08-29 고주파 스퍼터링 장치
CN2008801103366A CN101821424B (zh) 2007-10-04 2008-08-29 高频溅射装置
US12/727,316 US9017535B2 (en) 2007-10-04 2010-03-19 High-frequency sputtering device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009535931 2007-10-04
JP2009535931 2007-10-04
JP2008215386A JP5190316B2 (ja) 2007-10-04 2008-08-25 高周波スパッタリング装置

Publications (3)

Publication Number Publication Date
JP2010077452A JP2010077452A (ja) 2010-04-08
JP2010077452A5 true JP2010077452A5 (enExample) 2012-01-19
JP5190316B2 JP5190316B2 (ja) 2013-04-24

Family

ID=42208214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008215386A Active JP5190316B2 (ja) 2007-10-04 2008-08-25 高周波スパッタリング装置

Country Status (1)

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JP (1) JP5190316B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140272684A1 (en) * 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
CN106795625B (zh) * 2015-03-25 2018-05-22 株式会社爱发科 高频溅射装置及溅射方法
US10431440B2 (en) * 2015-12-20 2019-10-01 Applied Materials, Inc. Methods and apparatus for processing a substrate
JP2020026575A (ja) * 2018-08-10 2020-02-20 東京エレクトロン株式会社 成膜装置、成膜システム、および成膜方法
JP7325278B2 (ja) * 2019-09-18 2023-08-14 東京エレクトロン株式会社 スパッタ方法およびスパッタ装置
WO2021220839A1 (ja) * 2020-04-30 2021-11-04 東京エレクトロン株式会社 Ｐｖｄ装置
JP7739274B2 (ja) * 2020-05-11 2025-09-16 アプライド マテリアルズ インコーポレイテッド 基板上に薄膜トランジスタの層を堆積する方法及びスパッタ堆積装置
JP7531961B1 (ja) * 2022-10-05 2024-08-13 株式会社シンクロン ホモエピタキシャル薄膜、その製造方法及び製造装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0623568Y2 (ja) * 1987-02-21 1994-06-22 株式会社島津製作所 グロ−放電型成膜装置
JP2005187860A (ja) * 2003-12-25 2005-07-14 Nec Compound Semiconductor Devices Ltd スパッタ装置
JP4755475B2 (ja) * 2005-10-06 2011-08-24 株式会社昭和真空 スパッタ装置

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