CN102296274B - 用于阴极弧金属离子源的屏蔽装置 - Google Patents
用于阴极弧金属离子源的屏蔽装置 Download PDFInfo
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- CN102296274B CN102296274B CN2011102369888A CN201110236988A CN102296274B CN 102296274 B CN102296274 B CN 102296274B CN 2011102369888 A CN2011102369888 A CN 2011102369888A CN 201110236988 A CN201110236988 A CN 201110236988A CN 102296274 B CN102296274 B CN 102296274B
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CN102296274A CN102296274A (zh) | 2011-12-28 |
CN102296274B true CN102296274B (zh) | 2013-11-27 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2017118015A (ja) * | 2015-12-25 | 2017-06-29 | 株式会社トーキン | 電子装置及び電磁干渉抑制体の配置方法 |
CN108456862B (zh) * | 2018-03-13 | 2019-12-24 | 西华大学 | 一种金属离子源及其使用方法 |
CN113374662B (zh) * | 2021-06-29 | 2022-03-04 | 哈尔滨工业大学 | 一种改变中置阴极背景磁场的磁路结构 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1055774A (zh) * | 1991-06-01 | 1991-10-30 | 中国科学院电工研究所 | 大电流多弧斑受控真空电弧蒸发源 |
CN1397660A (zh) * | 2002-04-16 | 2003-02-19 | 北京科技大学 | 无磁屏蔽型铁磁性靶材溅射阴极 |
CN101126152A (zh) * | 2006-08-18 | 2008-02-20 | 深圳豪威真空光电子股份有限公司 | 柱状磁控溅射器 |
CN101736300A (zh) * | 2008-11-19 | 2010-06-16 | 中国科学院沈阳科学仪器研制中心有限公司 | 一种磁控溅射靶 |
CN102071401A (zh) * | 2009-11-25 | 2011-05-25 | 范家秋 | 一种提高利用率的平面磁控溅射靶 |
Family Cites Families (4)
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DE69226725T2 (de) * | 1991-05-29 | 1999-02-18 | Kobe Steel Ltd | Beschichtungsanlage mittels Kathodenzerstäubung und Methode zur Steuerung derselben |
WO2000016373A1 (de) * | 1998-09-14 | 2000-03-23 | Unaxis Trading Ag | Targetanordnung für eine arc-verdampfungs-kammer |
CN201158702Y (zh) * | 2008-01-11 | 2008-12-03 | 中国科学院金属研究所 | 一种改善电弧离子镀沉积工艺的动态磁控弧源装置 |
CN101519769B (zh) * | 2009-04-02 | 2011-11-09 | 电子科技大学 | 一种改善磁场分布的平面磁控溅射靶 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1055774A (zh) * | 1991-06-01 | 1991-10-30 | 中国科学院电工研究所 | 大电流多弧斑受控真空电弧蒸发源 |
CN1397660A (zh) * | 2002-04-16 | 2003-02-19 | 北京科技大学 | 无磁屏蔽型铁磁性靶材溅射阴极 |
CN101126152A (zh) * | 2006-08-18 | 2008-02-20 | 深圳豪威真空光电子股份有限公司 | 柱状磁控溅射器 |
CN101736300A (zh) * | 2008-11-19 | 2010-06-16 | 中国科学院沈阳科学仪器研制中心有限公司 | 一种磁控溅射靶 |
CN102071401A (zh) * | 2009-11-25 | 2011-05-25 | 范家秋 | 一种提高利用率的平面磁控溅射靶 |
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Inventor after: Yang Yiwei Inventor after: Wang Qiongxian Inventor after: Ye Jun Inventor before: Yang Huisheng |
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Free format text: CORRECT: INVENTOR; FROM: YANG HUISHENG TO: YANG YIWEI WANG QIONGXIAN YE JUN |
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Effective date of registration: 20230609 Address after: Room 326, Floor 3, Building 1, No. 8 Jinfu Road, Daxing District Economic Development Zone, Beijing 102600 Patentee after: Beijing Praseodymium Malichi Technology Co.,Ltd. Address before: Room A-409, No. 10 Xinghuo Road, Fengtai Science City, Fengtai District, Beijing 100076 Patentee before: Beijing Applied Plasma Tech. Co.,Ltd. |