JP5190316B2 - 高周波スパッタリング装置 - Google Patents

高周波スパッタリング装置 Download PDF

Info

Publication number
JP5190316B2
JP5190316B2 JP2008215386A JP2008215386A JP5190316B2 JP 5190316 B2 JP5190316 B2 JP 5190316B2 JP 2008215386 A JP2008215386 A JP 2008215386A JP 2008215386 A JP2008215386 A JP 2008215386A JP 5190316 B2 JP5190316 B2 JP 5190316B2
Authority
JP
Japan
Prior art keywords
substrate
electrode
chamber
film
frequency sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008215386A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010077452A5 (enExample
JP2010077452A (ja
Inventor
佳紀 永峰
貫人 中村
孝二 恒川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to JP2008215386A priority Critical patent/JP5190316B2/ja
Priority to PCT/JP2008/065485 priority patent/WO2009044597A1/ja
Priority to KR1020107007282A priority patent/KR101229473B1/ko
Priority to CN2008801103366A priority patent/CN101821424B/zh
Priority to US12/727,316 priority patent/US9017535B2/en
Publication of JP2010077452A publication Critical patent/JP2010077452A/ja
Publication of JP2010077452A5 publication Critical patent/JP2010077452A5/ja
Application granted granted Critical
Publication of JP5190316B2 publication Critical patent/JP5190316B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Physical Vapour Deposition (AREA)
  • Hall/Mr Elements (AREA)
JP2008215386A 2007-10-04 2008-08-25 高周波スパッタリング装置 Active JP5190316B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008215386A JP5190316B2 (ja) 2007-10-04 2008-08-25 高周波スパッタリング装置
PCT/JP2008/065485 WO2009044597A1 (ja) 2007-10-04 2008-08-29 高周波スパッタリング装置
KR1020107007282A KR101229473B1 (ko) 2007-10-04 2008-08-29 고주파 스퍼터링 장치
CN2008801103366A CN101821424B (zh) 2007-10-04 2008-08-29 高频溅射装置
US12/727,316 US9017535B2 (en) 2007-10-04 2010-03-19 High-frequency sputtering device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009535931 2007-10-04
JP2009535931 2007-10-04
JP2008215386A JP5190316B2 (ja) 2007-10-04 2008-08-25 高周波スパッタリング装置

Publications (3)

Publication Number Publication Date
JP2010077452A JP2010077452A (ja) 2010-04-08
JP2010077452A5 JP2010077452A5 (enExample) 2012-01-19
JP5190316B2 true JP5190316B2 (ja) 2013-04-24

Family

ID=42208214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008215386A Active JP5190316B2 (ja) 2007-10-04 2008-08-25 高周波スパッタリング装置

Country Status (1)

Country Link
JP (1) JP5190316B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140272684A1 (en) * 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
CN106795625B (zh) * 2015-03-25 2018-05-22 株式会社爱发科 高频溅射装置及溅射方法
US10431440B2 (en) * 2015-12-20 2019-10-01 Applied Materials, Inc. Methods and apparatus for processing a substrate
JP2020026575A (ja) * 2018-08-10 2020-02-20 東京エレクトロン株式会社 成膜装置、成膜システム、および成膜方法
JP7325278B2 (ja) * 2019-09-18 2023-08-14 東京エレクトロン株式会社 スパッタ方法およびスパッタ装置
WO2021220839A1 (ja) * 2020-04-30 2021-11-04 東京エレクトロン株式会社 Ｐｖｄ装置
JP7739274B2 (ja) * 2020-05-11 2025-09-16 アプライド マテリアルズ インコーポレイテッド 基板上に薄膜トランジスタの層を堆積する方法及びスパッタ堆積装置
JP7531961B1 (ja) * 2022-10-05 2024-08-13 株式会社シンクロン ホモエピタキシャル薄膜、その製造方法及び製造装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0623568Y2 (ja) * 1987-02-21 1994-06-22 株式会社島津製作所 グロ−放電型成膜装置
JP2005187860A (ja) * 2003-12-25 2005-07-14 Nec Compound Semiconductor Devices Ltd スパッタ装置
JP4755475B2 (ja) * 2005-10-06 2011-08-24 株式会社昭和真空 スパッタ装置

Also Published As

Publication number Publication date
JP2010077452A (ja) 2010-04-08

Similar Documents

Publication Publication Date Title
KR101229473B1 (ko) 고주파 스퍼터링 장치
JP4619450B2 (ja) 真空薄膜形成加工装置
JP5190316B2 (ja) 高周波スパッタリング装置
KR101786868B1 (ko) 제조방법
JP5139498B2 (ja) 磁気抵抗効果素子の製造方法
EP1994196A1 (en) Sputter deposition system and methods of use
US10361363B2 (en) Method of manufacturing tunnel magnetoresistive effect element and sputtering apparatus
TWI864025B (zh) 用於磁性隧道接面應用的頂緩衝層
EP2015377B1 (en) Method of manufacturing a magneto-resistive device
JP5101266B2 (ja) 磁気デバイスの製造方法
KR20200123851A (ko) 물리 기상 증착 챔버 내에서 증착되는 층들에서의 ra(resistance-area) 제어
US6610373B2 (en) Magnetic film-forming device and method
KR20170047171A (ko) 자기 저항 소자의 제조 방법 및 자기 저항 소자의 제조 시스템
WO2009107485A1 (ja) 磁気抵抗効果素子の製造方法及び製造装置
WO2010038593A1 (ja) ハードバイアス積層体の成膜装置および成膜方法、並びに磁気センサ積層体の製造装置および製造方法
JP2003069112A (ja) 強磁性トンネル接合素子の製造方法
US20200091420A1 (en) Apparatus and methods of fabricating a magneto-resistive random access memory (mram) device
JP2012149305A (ja) スパッタ成膜装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100105

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111130

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120927

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121113

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130108

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130128

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160201

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 5190316

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250