JP2010050391A - 半導体装置及びそれを用いた電子機器 - Google Patents
半導体装置及びそれを用いた電子機器 Download PDFInfo
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
【解決手段】半導体装置は、主面上に複数の受光素子6が配置された撮像領域3、及び、撮像領域3の外周部に配置された周辺回路領域2を有する半導体基板4と、撮像領域3上に形成された複数のマイクロレンズ7と、半導体基板4上に、複数のマイクロレンズ7と周辺回路領域2の一部とを覆うように形成された低屈折率膜8と、低屈折率膜8上であって且つ撮像領域3上に対応する領域に形成された透明基板5とを備える。低屈折率膜8における周辺回路領域2に配置された増幅回路9上に対応する領域には、貫通孔10が形成されている。
【選択図】図2
Description
図5は、本実施形態の変形例1に係る半導体装置の構造を示している。
図6(a)〜(c)は、本実施形態の変形例2に係る半導体装置の構造を示しており、図6(a)は、本実施形態の変形例2の半導体装置の斜視図であり、図6(b)は、本実施形態の変形例2の半導体装置の断面図であり、図6(c)は、(b)における領域Cの拡大断面図であって迷光の一例を含んだ図である。なお、図6(c)は、上記図2(c)と同様に、迷光の状態、つまり、矢印線Dの太さが迷光量を示し、異なる面に侵入するたびに反射、減衰する状況を示している。
2 周辺回路領域
3 撮像領域
4 半導体基板
5 透明基板
6 受光素子
7 マイクロレンズ
8 低屈折率膜
9 増幅回路
10 貫通孔
11 透明接着剤層
12 電極
13 接続端子
14 金属細線
15 封止樹脂
16 ダイパッド
17 ダイボンド材
18 層間絶縁膜
19 表面保護膜
20 外部接続電極
21 貫通電極
22 ボールタイプの外部接続電極
Claims (7)
- 主面上に複数の受光素子が配置された撮像領域、及び、前記撮像領域の外周部に配置された周辺回路領域を有する半導体基板と、
前記撮像領域上に形成された複数のマイクロレンズと、
前記半導体基板上に、前記複数のマイクロレンズと前記周辺回路領域の一部とを覆うように形成された低屈折率膜と、
前記低屈折率膜上であって且つ前記撮像領域上に対応する領域に形成された透明基板とを備え、
前記低屈折率膜における前記周辺回路領域に配置された増幅回路上に対応する領域には、貫通孔が形成されている、半導体装置。 - 請求項1に記載の半導体装置において、
前記増幅回路は、前記周辺回路領域に複数形成されており、
前記貫通孔は、前記複数の増幅回路の各々に対応して複数設けられている、半導体装置。 - 請求項1又は2に記載の半導体装置において、
前記低屈折率膜と前記透明基板との間には、透明接着剤層が介在しており、
前記透明接着剤層の周縁部は、前記増幅回路を覆うように形成されていると共に、前記貫通孔においては上方から下方に向かって突出する球面状の形状を有している、半導体装置。 - 請求項1〜3のうちのいずれか1項に記載の半導体装置において、
前記半導体基板が搭載される開口部を上面に有するキャビティと、
前記半導体基板上における前記透明基板の外方の領域を封止するように形成された封止樹脂とをさらに備える、半導体装置。 - 請求項1、2、又は4に記載の半導体装置において、
前記封止樹脂は、前記増幅回路を覆うように形成されていると共に、前記貫通孔においては上方から下方に向かって突出する球面状の形状を有している、半導体装置。 - 請求項1〜5のうちのいずれか1項に記載の半導体装置において、
前記周辺回路領域上における前記低屈折率膜の外方の領域に形成された電極をさらに備え、
前記電極は、金属細線と電気的に接続している、半導体装置。 - 請求項1〜6のうちのいずれか1項に記載の半導体装置と、
前記半導体装置の外部接続電極を実装電極上に実装する実装基板と、
前記半導体装置の前記透明基板の上方に形成されたレンズとを備える、電子機器。
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JP2008215398A JP5185019B2 (ja) | 2008-08-25 | 2008-08-25 | 半導体装置及びそれを用いた電子機器 |
US12/481,252 US7884437B2 (en) | 2008-08-25 | 2009-06-09 | Semiconductor device and electronic apparatus using the same |
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JP2010050391A true JP2010050391A (ja) | 2010-03-04 |
JP5185019B2 JP5185019B2 (ja) | 2013-04-17 |
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Families Citing this family (6)
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JP5185019B2 (ja) * | 2008-08-25 | 2013-04-17 | パナソニック株式会社 | 半導体装置及びそれを用いた電子機器 |
JP2011205222A (ja) * | 2010-03-24 | 2011-10-13 | Toshiba Corp | カメラモジュール |
JP2018011018A (ja) * | 2016-07-15 | 2018-01-18 | ソニー株式会社 | 固体撮像素子および製造方法、並びに電子機器 |
JP6818468B2 (ja) | 2016-08-25 | 2021-01-20 | キヤノン株式会社 | 光電変換装置及びカメラ |
JP2018060921A (ja) | 2016-10-05 | 2018-04-12 | キヤノン株式会社 | 光電変換装置及びシステム |
US11069729B2 (en) | 2018-05-01 | 2021-07-20 | Canon Kabushiki Kaisha | Photoelectric conversion device, and equipment |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007053324A (ja) * | 2005-07-20 | 2007-03-01 | Matsushita Electric Ind Co Ltd | 固体撮像装置及びその製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5072284A (en) * | 1988-11-25 | 1991-12-10 | Fuji Photo Film Co., Ltd. | Solid state image pickup device |
JPH02229453A (ja) | 1988-11-25 | 1990-09-12 | Fuji Photo Film Co Ltd | 半導体装置及びその製造方法 |
JPH1064956A (ja) * | 1996-08-20 | 1998-03-06 | Fujitsu Ltd | フェースダウンボンディング半導体装置 |
US6037248A (en) * | 1997-06-13 | 2000-03-14 | Micron Technology, Inc. | Method of fabricating integrated circuit wiring with low RC time delay |
JP4318007B2 (ja) * | 1999-10-07 | 2009-08-19 | 富士フイルム株式会社 | 固体撮像素子 |
JP2002094082A (ja) * | 2000-07-11 | 2002-03-29 | Seiko Epson Corp | 光素子及びその製造方法並びに電子機器 |
JP2004260787A (ja) * | 2002-09-09 | 2004-09-16 | Rohm Co Ltd | イメージセンサモジュール |
US7364932B2 (en) * | 2002-12-27 | 2008-04-29 | Matsushita Electric Industrial Co., Ltd. | Electronic device and method of manufacturing the same |
US7535509B2 (en) * | 2003-08-22 | 2009-05-19 | Konica Minolta Opto, Inc. | Transparent member in a solid-state image pick-up apparatus supported through use of micro-lenses larger in size than pixel micro-lenses and a method for producing the micro-lenses and transparent member |
JP4170968B2 (ja) * | 2004-02-02 | 2008-10-22 | 松下電器産業株式会社 | 光学デバイス |
US7924416B2 (en) * | 2005-06-22 | 2011-04-12 | Nikon Corporation | Measurement apparatus, exposure apparatus, and device manufacturing method |
JP2007142058A (ja) * | 2005-11-17 | 2007-06-07 | Matsushita Electric Ind Co Ltd | 半導体撮像素子およびその製造方法並びに半導体撮像装置とその製造方法 |
JP4951989B2 (ja) * | 2006-02-09 | 2012-06-13 | 富士通セミコンダクター株式会社 | 半導体装置 |
JP4705499B2 (ja) * | 2006-03-27 | 2011-06-22 | パナソニック株式会社 | オンチップレンズの形成方法および固体撮像装置の製造方法 |
US7615731B2 (en) * | 2006-09-14 | 2009-11-10 | Carestream Health, Inc. | High fill-factor sensor with reduced coupling |
KR100812078B1 (ko) * | 2006-09-26 | 2008-03-07 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그 제조방법 |
JP2008092417A (ja) * | 2006-10-04 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 半導体撮像素子およびその製造方法並びに半導体撮像装置および半導体撮像モジュール |
JP5185019B2 (ja) * | 2008-08-25 | 2013-04-17 | パナソニック株式会社 | 半導体装置及びそれを用いた電子機器 |
KR20100039686A (ko) * | 2008-10-08 | 2010-04-16 | 주식회사 하이닉스반도체 | 이미지 센서 모듈 및 이의 제조 방법 |
JP5324890B2 (ja) * | 2008-11-11 | 2013-10-23 | ラピスセミコンダクタ株式会社 | カメラモジュールおよびその製造方法 |
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