JP2010041045A - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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JP2010041045A
JP2010041045A JP2009160474A JP2009160474A JP2010041045A JP 2010041045 A JP2010041045 A JP 2010041045A JP 2009160474 A JP2009160474 A JP 2009160474A JP 2009160474 A JP2009160474 A JP 2009160474A JP 2010041045 A JP2010041045 A JP 2010041045A
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semiconductor
sheet
electrode
organic resin
layer
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JP2010041045A5 (enExample
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Akihiro Senda
章裕 千田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/0353Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
    • H05K1/0366Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement reinforced, e.g. by fibres, fabrics
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092Dispersed materials, e.g. conductive pastes or inks
    • H05K1/095Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0275Fibers and reinforcement materials
    • H05K2201/029Woven fibrous reinforcement or textile
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1163Chemical reaction, e.g. heating solder by exothermic reaction
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • H05K3/002Etching of the substrate by chemical or physical means by liquid chemical etching
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170130286A (ko) * 2016-05-18 2017-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 표시 장치, 모듈, 및 전자 기기
JP2018530148A (ja) * 2015-09-17 2018-10-11 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH 素子用の支持体、素子、および、支持体または素子の製造方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5473413B2 (ja) * 2008-06-20 2014-04-16 株式会社半導体エネルギー研究所 配線基板の作製方法、アンテナの作製方法及び半導体装置の作製方法
JP5583951B2 (ja) * 2008-11-11 2014-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2010140539A1 (en) * 2009-06-05 2010-12-09 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
JP5719560B2 (ja) * 2009-10-21 2015-05-20 株式会社半導体エネルギー研究所 端子構造の作製方法
JP6161380B2 (ja) * 2013-04-17 2017-07-12 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
EP3565390A4 (en) * 2016-12-28 2020-08-12 Fujikura Ltd. WIRING SUBSTRATE AND METHOD FOR MANUFACTURING A WIRING SUBSTRATE
DE102018209818B4 (de) * 2018-06-18 2024-10-10 Bundesdruckerei Gmbh Verfahren zum Herstellen eines Wert- oder Sicherheitsdokumentenrohlings mit einer elektronischen Schaltung, ein Wert- oder Sicherheitsdokumentenrohling und ein Sicherheits- und Wertdokument
CN112585812B (zh) * 2018-08-24 2023-07-25 京瓷株式会社 谐振构造体、天线、无线通信模块以及无线通信设备
KR102764370B1 (ko) * 2019-12-26 2025-02-07 삼성전자주식회사 반도체 패키지
US20240402006A1 (en) * 2023-06-02 2024-12-05 International Business Machines Corporation Flexible ultraviolet sensor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1117348A (ja) * 1997-06-25 1999-01-22 Kyocera Corp 配線基板およびその製造方法
JP2001308540A (ja) * 2000-04-21 2001-11-02 Shinko Electric Ind Co Ltd 多層配線基板及びその製造方法
JP2002064178A (ja) * 2000-08-18 2002-02-28 Ibiden Co Ltd 半導体モジュールの製造方法
JP2003174141A (ja) * 2001-09-27 2003-06-20 Dt Circuit Technology Co Ltd 半導体装置及びその製造方法

Family Cites Families (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5453264A (en) * 1977-10-04 1979-04-26 Suwa Seikosha Kk Bilateral printed board
EP0168509B1 (de) * 1984-07-16 1989-03-22 Ibm Deutschland Gmbh Herstellung von Verbindungslöchern in Kunstoffplatten und Anwendung des Verfahrens
US5058800A (en) * 1988-05-30 1991-10-22 Canon Kabushiki Kaisha Method of making electric circuit device
KR930003894B1 (ko) * 1989-01-25 1993-05-15 아사히가세이고오교가부시끼가이샤 신규한 프리프레그와 복합 성형체, 및 복합 성형체의 제조방법
DE3907757A1 (de) * 1989-03-10 1990-09-13 Mtu Muenchen Gmbh Schutzfolie
JPH03105932A (ja) * 1989-09-20 1991-05-02 Hitachi Ltd シート状接着剤並びに当該接着剤を用いた半導体装置
US5888609A (en) * 1990-12-18 1999-03-30 Valtion Teknillinen Tutkimuskeskus Planar porous composite structure and method for its manufacture
JPH05190582A (ja) 1992-01-08 1993-07-30 Oki Electric Ind Co Ltd 樹脂封止半導体装置及びその製造方法
JP3578466B2 (ja) 1992-04-14 2004-10-20 ユニチカ株式会社 補強用無機繊維織布及びそれを用いた多層プリント配線板
JPH06224527A (ja) * 1993-01-25 1994-08-12 Nippon Oil & Fats Co Ltd 回路基板
JPH06244528A (ja) * 1993-02-19 1994-09-02 Toppan Printing Co Ltd プリント配線基板の製造方法
JPH06244529A (ja) * 1993-02-19 1994-09-02 Toppan Printing Co Ltd プリント配線基板の製造方法
JP3415186B2 (ja) * 1993-02-19 2003-06-09 凸版印刷株式会社 プリント配線基板の製造方法
JPH077246A (ja) 1993-06-17 1995-01-10 Kobe Steel Ltd 電子部品構成物内蔵インモールド品の製造方法
US5677045A (en) * 1993-09-14 1997-10-14 Hitachi, Ltd. Laminate and multilayer printed circuit board
DK0760986T3 (da) * 1994-05-27 1999-05-25 Ake Gustafson Fremgangsmåde til fremstilling af et elektronisk modul og elektronisk modul frembragt ved fremgangsmåden
TW371285B (en) 1994-09-19 1999-10-01 Amp Akzo Linlam Vof Foiled UD-prepreg and PWB laminate prepared therefrom
JP3364081B2 (ja) * 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5757456A (en) * 1995-03-10 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating involving peeling circuits from one substrate and mounting on other
JP2799411B2 (ja) * 1996-04-08 1998-09-17 勝也 広繁 プリント導電シート
US6482495B1 (en) * 1996-09-04 2002-11-19 Hitachi Maxwell, Ltd. Information carrier and process for production thereof
JPH1092980A (ja) 1996-09-13 1998-04-10 Toshiba Corp 無線カードおよびその製造方法
JPH10223691A (ja) * 1997-02-10 1998-08-21 Katsuya Hiroshige 導電基板に多接点部品を接続導通する方法及び接合シート
TW484101B (en) * 1998-12-17 2002-04-21 Hitachi Ltd Semiconductor device and its manufacturing method
JP2004078991A (ja) 1998-12-17 2004-03-11 Hitachi Ltd 半導体装置およびその製造方法
US6224965B1 (en) * 1999-06-25 2001-05-01 Honeywell International Inc. Microfiber dielectrics which facilitate laser via drilling
JP2001024081A (ja) * 1999-07-08 2001-01-26 Toshiba Corp 導電基体及びその製造方法
JP2001102523A (ja) * 1999-09-28 2001-04-13 Sony Corp 薄膜デバイスおよびその製造方法
JP4423779B2 (ja) 1999-10-13 2010-03-03 味の素株式会社 エポキシ樹脂組成物並びに該組成物を用いた接着フィルム及びプリプレグ、及びこれらを用いた多層プリント配線板及びその製造法
JP3675688B2 (ja) * 2000-01-27 2005-07-27 寛治 大塚 配線基板及びその製造方法
JP4884592B2 (ja) 2000-03-15 2012-02-29 株式会社半導体エネルギー研究所 発光装置の作製方法及び表示装置の作製方法
JP2002198658A (ja) 2000-12-26 2002-07-12 Kyocera Corp プリプレグ及びその製造方法、並びにそれを用いた配線基板の製造方法
JP4587576B2 (ja) * 2001-01-30 2010-11-24 京セラ株式会社 多層配線基板
JP5271467B2 (ja) * 2001-03-06 2013-08-21 日立化成株式会社 エポキシ接着フィルムによる仮接着方法
US8415208B2 (en) * 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP2003049388A (ja) 2001-08-08 2003-02-21 Du Pont Toray Co Ltd 扁平化したアラミド繊維からなる布帛
TW540281B (en) * 2001-08-09 2003-07-01 Matsushita Electric Industrial Co Ltd Manufacturing method of conductive paste material and manufacturing method of printing wiring base board
US6734568B2 (en) 2001-08-29 2004-05-11 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US6903377B2 (en) * 2001-11-09 2005-06-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting apparatus and method for manufacturing the same
KR100430001B1 (ko) * 2001-12-18 2004-05-03 엘지전자 주식회사 다층기판의 제조방법, 그 다층기판의 패드 형성방법 및 그다층기판을 이용한 반도체 패키지의 제조방법
JP2003282478A (ja) 2002-01-17 2003-10-03 Sony Corp 合金化方法及び配線形成方法、表示素子の形成方法、画像表示装置の製造方法
US7485489B2 (en) * 2002-06-19 2009-02-03 Bjoersell Sten Electronics circuit manufacture
AU2003253227A1 (en) 2002-06-19 2004-01-06 Sten Bjorsell Electronics circuit manufacture
JP2004140267A (ja) * 2002-10-18 2004-05-13 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2004193378A (ja) * 2002-12-12 2004-07-08 Hitachi Aic Inc プリント配線板およびその製造方法
JP4554152B2 (ja) * 2002-12-19 2010-09-29 株式会社半導体エネルギー研究所 半導体チップの作製方法
CN100477891C (zh) * 2003-01-16 2009-04-08 富士通株式会社 多层布线基板及其制造方法、纤维强化树脂基板制造方法
JP4828088B2 (ja) 2003-06-05 2011-11-30 凸版印刷株式会社 Icタグ
JP4554180B2 (ja) 2003-09-17 2010-09-29 ソニー株式会社 薄膜半導体デバイスの製造方法
JP4540359B2 (ja) * 2004-02-10 2010-09-08 シャープ株式会社 半導体装置およびその製造方法
US20050233122A1 (en) * 2004-04-19 2005-10-20 Mikio Nishimura Manufacturing method of laminated substrate, and manufacturing apparatus of semiconductor device for module and laminated substrate for use therein
KR101226260B1 (ko) * 2004-06-02 2013-01-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
KR20060045208A (ko) * 2004-11-12 2006-05-17 삼성테크윈 주식회사 반도체 팩키지용 회로기판 및 이의 제조방법
US7736964B2 (en) * 2004-11-22 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method for manufacturing the same
JP5072217B2 (ja) * 2004-11-22 2012-11-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2006253612A (ja) * 2005-03-14 2006-09-21 Katsuya Hiroshige 両面配線基板
US7465674B2 (en) * 2005-05-31 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US7727859B2 (en) * 2005-06-30 2010-06-01 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
JP4832185B2 (ja) * 2005-07-08 2011-12-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7685706B2 (en) * 2005-07-08 2010-03-30 Semiconductor Energy Laboratory Co., Ltd Method of manufacturing a semiconductor device
US7700463B2 (en) * 2005-09-02 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2007091822A (ja) 2005-09-27 2007-04-12 Shin Kobe Electric Mach Co Ltd プリプレグ
JP2007243065A (ja) * 2006-03-10 2007-09-20 Fujitsu Ltd 回路基板
JP5227536B2 (ja) * 2006-04-28 2013-07-03 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
TWI431726B (zh) * 2006-06-01 2014-03-21 Semiconductor Energy Lab 非揮發性半導體記憶體裝置
CN101479747B (zh) * 2006-06-26 2011-05-18 株式会社半导体能源研究所 包括半导体器件的纸及其制造方法
TWI412079B (zh) 2006-07-28 2013-10-11 Semiconductor Energy Lab 製造顯示裝置的方法
CN101523611B (zh) 2006-10-04 2012-07-04 株式会社半导体能源研究所 半导体器件及其制造方法
JP5296360B2 (ja) 2006-10-04 2013-09-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2008179286A (ja) 2007-01-25 2008-08-07 Honda Motor Co Ltd 4輪車両のマッドガード装置
EP1970951A3 (en) * 2007-03-13 2009-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2372756A1 (en) * 2007-03-13 2011-10-05 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
EP1976000A3 (en) * 2007-03-26 2009-05-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
EP1976001A3 (en) * 2007-03-26 2012-08-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN101803008B (zh) * 2007-09-07 2012-11-28 株式会社半导体能源研究所 半导体装置及其制造方法
JP5248412B2 (ja) 2008-06-06 2013-07-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8044499B2 (en) 2008-06-10 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Wiring substrate, manufacturing method thereof, semiconductor device, and manufacturing method thereof
JP5473413B2 (ja) 2008-06-20 2014-04-16 株式会社半導体エネルギー研究所 配線基板の作製方法、アンテナの作製方法及び半導体装置の作製方法
JP5583951B2 (ja) * 2008-11-11 2014-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN102194769A (zh) * 2010-03-11 2011-09-21 国碁电子(中山)有限公司 芯片封装结构及方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1117348A (ja) * 1997-06-25 1999-01-22 Kyocera Corp 配線基板およびその製造方法
JP2001308540A (ja) * 2000-04-21 2001-11-02 Shinko Electric Ind Co Ltd 多層配線基板及びその製造方法
JP2002064178A (ja) * 2000-08-18 2002-02-28 Ibiden Co Ltd 半導体モジュールの製造方法
JP2003174141A (ja) * 2001-09-27 2003-06-20 Dt Circuit Technology Co Ltd 半導体装置及びその製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018530148A (ja) * 2015-09-17 2018-10-11 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH 素子用の支持体、素子、および、支持体または素子の製造方法
US10879426B2 (en) 2015-09-17 2020-12-29 Osram Oled Gmbh Carrier for a component, component and method for producing a carrier or a component
KR20170130286A (ko) * 2016-05-18 2017-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 표시 장치, 모듈, 및 전자 기기
KR102378976B1 (ko) 2016-05-18 2022-03-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 표시 장치, 모듈, 및 전자 기기
KR20220042325A (ko) * 2016-05-18 2022-04-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 표시 장치, 모듈, 및 전자 기기
KR102588708B1 (ko) 2016-05-18 2023-10-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 표시 장치, 모듈, 및 전자 기기

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