JP2010040562A5 - - Google Patents

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Publication number
JP2010040562A5
JP2010040562A5 JP2008198338A JP2008198338A JP2010040562A5 JP 2010040562 A5 JP2010040562 A5 JP 2010040562A5 JP 2008198338 A JP2008198338 A JP 2008198338A JP 2008198338 A JP2008198338 A JP 2008198338A JP 2010040562 A5 JP2010040562 A5 JP 2010040562A5
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JP
Japan
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JP2008198338A
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JP2010040562A (ja
JP5309360B2 (ja
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Priority claimed from JP2008198338A external-priority patent/JP5309360B2/ja
Priority to JP2008198338A priority Critical patent/JP5309360B2/ja
Priority to US12/329,987 priority patent/US7800204B2/en
Priority to KR1020090022461A priority patent/KR101060173B1/ko
Priority to DE102009019684A priority patent/DE102009019684B4/de
Priority to CN2009101371633A priority patent/CN101640222B/zh
Publication of JP2010040562A publication Critical patent/JP2010040562A/ja
Priority to US12/859,315 priority patent/US8420496B2/en
Publication of JP2010040562A5 publication Critical patent/JP2010040562A5/ja
Publication of JP5309360B2 publication Critical patent/JP5309360B2/ja
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JP2008198338A 2008-07-31 2008-07-31 半導体装置およびその製造方法 Active JP5309360B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008198338A JP5309360B2 (ja) 2008-07-31 2008-07-31 半導体装置およびその製造方法
US12/329,987 US7800204B2 (en) 2008-07-31 2008-12-08 Semiconductor device and method of fabricating the same
KR1020090022461A KR101060173B1 (ko) 2008-07-31 2009-03-17 반도체장치 및 그 제조방법
DE102009019684A DE102009019684B4 (de) 2008-07-31 2009-04-30 Halbleitervorrichtung und Verfahren zu ihrer Herstellung
CN2009101371633A CN101640222B (zh) 2008-07-31 2009-05-04 半导体装置及其制造方法
US12/859,315 US8420496B2 (en) 2008-07-31 2010-08-19 Semiconductor device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008198338A JP5309360B2 (ja) 2008-07-31 2008-07-31 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2010040562A JP2010040562A (ja) 2010-02-18
JP2010040562A5 true JP2010040562A5 (ja) 2010-12-09
JP5309360B2 JP5309360B2 (ja) 2013-10-09

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ID=41501448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008198338A Active JP5309360B2 (ja) 2008-07-31 2008-07-31 半導体装置およびその製造方法

Country Status (5)

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US (2) US7800204B2 (ja)
JP (1) JP5309360B2 (ja)
KR (1) KR101060173B1 (ja)
CN (1) CN101640222B (ja)
DE (1) DE102009019684B4 (ja)

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WO2011125274A1 (ja) 2010-04-06 2011-10-13 三菱電機株式会社 電力用半導体装置およびその製造方法
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CN103199107B (zh) * 2012-01-06 2016-02-10 上海华虹宏力半导体制造有限公司 半导体器件及制造方法
JP6313500B2 (ja) * 2012-08-30 2018-04-18 株式会社東芝 半導体装置
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JP5610493B2 (ja) * 2012-10-03 2014-10-22 株式会社日本製鋼所 半導体デバイスの製造方法および製造装置
JP6082314B2 (ja) * 2012-11-06 2017-02-15 株式会社東芝 半導体装置
CN103236436B (zh) * 2013-02-28 2016-02-17 溧阳市宏达电机有限公司 一种pin二极管的电极的制造方法
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JP6098540B2 (ja) * 2014-02-10 2017-03-22 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法
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JP6846119B2 (ja) * 2016-05-02 2021-03-24 株式会社 日立パワーデバイス ダイオード、およびそれを用いた電力変換装置
JP6698487B2 (ja) 2016-09-26 2020-05-27 三菱電機株式会社 半導体装置
JP7126361B2 (ja) 2018-03-08 2022-08-26 三菱電機株式会社 半導体装置、電力変換装置、及び、半導体装置の製造方法
JP7070303B2 (ja) 2018-10-04 2022-05-18 三菱電機株式会社 半導体装置
CN110061067A (zh) * 2019-04-30 2019-07-26 苏州固锝电子股份有限公司 一种可并联组合的整流二极管芯片的制造工艺
US11158759B1 (en) * 2020-04-16 2021-10-26 International Business Machines Corporation Chip carrier integrating power harvesting and regulation diodes and fabrication thereof
CN113644137B (zh) * 2020-11-30 2024-01-30 湖南大学 一种大功率快恢复二极管结构
CN112687749A (zh) * 2020-12-14 2021-04-20 株洲中车时代半导体有限公司 快恢复二极管及其制作方法
CN116153969A (zh) * 2023-03-03 2023-05-23 深圳吉华微特电子有限公司 抗单粒子烧毁高压快恢复二极管及其制造方法

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