JP7126361B2 - 半導体装置、電力変換装置、及び、半導体装置の製造方法 - Google Patents
半導体装置、電力変換装置、及び、半導体装置の製造方法 Download PDFInfo
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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Description
本発明の実施の形態に係る半導体装置について説明する前に、これと関連する半導体装置(「関連半導体装置」と記す)について説明する。
図2は、本発明の実施の形態1に係る半導体装置の断面構成、並びに、それに対応するネットドーピング濃度、ドーピングプロファイル、及び、電界強度を示す図である。なお、図2の半導体装置は、例えば、RFCダイオード(Relaxed Filed of Cathode Diode)や、RC-IGBT(Reverse Conducting Insulated Gate Bipolar Transistor)などに適用することができる。
図3は、本発明の実施の形態2に係る半導体装置の断面構成、並びに、それに対応するネットドーピング濃度、及び、ドーピングプロファイルを示す図である。以下、本実施の形態2に係る構成要素のうち、上述の構成要素と同じまたは類似する構成要素については同じ参照符号を付し、異なる構成要素について主に説明する。
図4は、本発明の実施の形態3に係る半導体装置の断面構成、並びに、それに対応するネットドーピング濃度、及び、ドーピングプロファイルを示す図である。以下、本実施の形態3に係る構成要素のうち、上述の構成要素と同じまたは類似する構成要素については同じ参照符号を付し、異なる構成要素について主に説明する。
図5は、本発明の実施の形態4に係る半導体装置の断面構成、並びに、それに対応するネットドーピング濃度、及び、ドーピングプロファイルを示す図である。以下、本実施の形態4に係る構成要素のうち、上述の構成要素と同じまたは類似する構成要素については同じ参照符号を付し、異なる構成要素について主に説明する。なお、図5のネットドーピング濃度、及び、ドーピングプロファイルは、A-A線におけるネットドーピング濃度、及び、ドーピングプロファイルである。B-B線におけるネットドーピング濃度、及び、ドーピングプロファイルは、実施の形態1などのネットドーピング濃度、及び、ドーピングプロファイルと同様である。
図7は、本発明の実施の形態5に係る半導体装置の断面構成、並びに、それに対応するネットドーピング濃度、及び、ドーピングプロファイルを示す図である。以下、本実施の形態5に係る構成要素のうち、上述の構成要素と同じまたは類似する構成要素については同じ参照符号を付し、異なる構成要素について主に説明する。
図8は、本発明の実施の形態6に係る半導体装置の断面構成を示す図である。以下、本実施の形態6に係る構成要素のうち、上述の構成要素と同じまたは類似する構成要素については同じ参照符号を付し、異なる構成要素について主に説明する。
図9は、本発明の実施の形態7に係る半導体装置の断面構成を示す図である。以下、本実施の形態7に係る構成要素のうち、上述の構成要素と同じまたは類似する構成要素については同じ参照符号を付し、異なる構成要素について主に説明する。
本発明の実施の形態8に係る電力変換装置は、実施の形態1~7のいずれかに係る半導体装置を有する主変換回路を備えた電力変換装置である。以上で説明した半導体装置は特定の電力変換装置に限定されるものではないが、以下、本実施の形態8として、三相のインバータに、実施の形態1~7のいずれかに係る半導体装置を適用した場合について説明する。
Claims (7)
- p型不純物濃度が一定であるアノード層と、
n型不純物濃度が分布を有する第1半導体層と、
前記アノード層との間に前記第1半導体層を挟んで配設され、n型不純物濃度が前記第1半導体層よりも高く、かつ一定である第2半導体層と
を備え、
前記第1半導体層のうち前記アノード層側の部分のn型不純物濃度は、前記アノード層のp型不純物濃度よりも低く、
前記第1半導体層のうち前記第2半導体層側の部分のn型不純物濃度は、前記アノード層のp型不純物濃度よりも高い、半導体装置。 - 請求項1に記載の半導体装置であって、
前記第1半導体層内に配設され当該第1半導体層を前記アノード層側の部分と前記第2半導体層側の部分とに区分し、p型不純物濃度が一定である第3半導体層をさらに備える、半導体装置。 - 請求項1に記載の半導体装置であって、
前記第1半導体層に対して前記第2半導体層と同じ側に配設された、p型不純物濃度が一定である第3半導体層をさらに備える、半導体装置。 - 請求項1または請求項2に記載の半導体装置であって、
前記アノード層に対して前記第1半導体層と逆側に配設された、p型不純物濃度が前記アノード層よりも高く、かつ分布を有する第4半導体層をさらに備える、半導体装置。 - 請求項1から請求項3のうちのいずれか1項に記載の半導体装置であって、
前記第1半導体層は、前記アノード層の前記第2半導体層側だけでなく、前記アノード層の終端側にも配設され、
前記アノード層との間に、前記アノード層の終端側の前記第1半導体層を挟んで配設された、p型不純物濃度が一定である終端層をさらに備える、半導体装置。 - 請求項1から請求項5のうちのいずれか1項に記載の半導体装置を有し、入力される電力を変換して出力する主変換回路と、
前記主変換回路を制御する制御信号を前記主変換回路に出力する制御回路と
を備える、電力変換装置。 - p型不純物濃度が一定である半導体基板に、n型不純物を照射または注入することによって、p型不純物濃度が一定であるアノード層と、n型不純物濃度が分布を有し、前記アノード層側の部分のn型不純物濃度が前記アノード層のp型不純物濃度よりも低い第1半導体層と、を形成する工程と、
前記アノード層との間に前記第1半導体層を挟んで配設され、n型不純物濃度が前記第1半導体層よりも高く、かつ一定である第2半導体層を形成する工程と
を備える、半導体装置の製造方法。
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CN202210555566.5A CN114864700A (zh) | 2018-03-08 | 2019-03-01 | 半导体装置的制造方法 |
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JP2014110310A (ja) | 2012-11-30 | 2014-06-12 | Furukawa Electric Co Ltd:The | 窒化物系化合物半導体装置およびその製造方法 |
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