JP2010024086A - 誘電体セラミックおよび積層セラミックコンデンサ - Google Patents
誘電体セラミックおよび積層セラミックコンデンサ Download PDFInfo
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- JP2010024086A JP2010024086A JP2008186813A JP2008186813A JP2010024086A JP 2010024086 A JP2010024086 A JP 2010024086A JP 2008186813 A JP2008186813 A JP 2008186813A JP 2008186813 A JP2008186813 A JP 2008186813A JP 2010024086 A JP2010024086 A JP 2010024086A
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- dielectric ceramic
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- dielectric
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- 239000000919 ceramic Substances 0.000 title claims abstract description 71
- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 32
- 239000002245 particle Substances 0.000 claims abstract description 59
- 239000013078 crystal Substances 0.000 claims abstract description 26
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 22
- 229910052788 barium Inorganic materials 0.000 claims abstract description 17
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 17
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 16
- 150000001875 compounds Chemical class 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims description 25
- 239000003990 capacitor Substances 0.000 claims description 8
- 229910001000 nickel titanium Inorganic materials 0.000 claims description 8
- 229910015249 Ba—Si Inorganic materials 0.000 claims description 7
- 229910052735 hafnium Inorganic materials 0.000 claims description 7
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
- 229910052691 Erbium Inorganic materials 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052689 Holmium Inorganic materials 0.000 claims description 3
- 229910052765 Lutetium Inorganic materials 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 3
- 229910052772 Samarium Inorganic materials 0.000 claims description 3
- 229910052771 Terbium Inorganic materials 0.000 claims description 3
- 229910052775 Thulium Inorganic materials 0.000 claims description 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims 1
- 229910003077 Ti−O Inorganic materials 0.000 abstract description 15
- 230000035939 shock Effects 0.000 abstract description 11
- 229910018557 Si O Inorganic materials 0.000 abstract description 8
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract description 8
- 239000000843 powder Substances 0.000 description 51
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 229910010413 TiO 2 Inorganic materials 0.000 description 10
- 239000003989 dielectric material Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 229910008090 Li-Mn-O Inorganic materials 0.000 description 4
- 229910006369 Li—Mn—O Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910006715 Li—O Inorganic materials 0.000 description 3
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 3
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 1
- 229910008312 Si—Li—O Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C04B35/4682—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
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- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
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- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
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- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
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Abstract
【解決手段】ABO3で表されるペロブスカイト型化合物を主成分とする誘電体セラミックであって、ABO3がたとえばBaTiO3であるとき、その結晶粒子は、主成分からなるBaTiO3結晶粒子11を含むとともに、二次相として、少なくともMg、NiおよびTiを含む結晶性酸化物からなるMg−Ni−Ti−O系結晶性酸化物粒子12と、少なくともBaおよびSiを含む結晶性酸化物からなるBa−Si−O系結晶性酸化物粒子13とを含むようにする。
【選択図】図2
Description
実験例1では、2種類の二次相粒子の有/無が与える影響を調べた。
(A−1)実施例1−1
まず、出発原料として、BaCO3およびTiO2の各粉末を準備し、これら粉末を、BaTiO3の組成になるように秤量し、次いで、ボールミルにより混合し、1150℃の温度で熱処理し、BaTiO3粉末を得た。その平均粒径は0.15μm、Ba/Ti比は1.001であった。
表1の「比較例1−1」に示すように、BaCO3およびSiO2の各粉末を熱処理せずにそのまま添加したことを除いて、実施例1−1の場合と同様に、比較例1−1に係る誘電体原料配合物を得た。
表1の「比較例1−2」に示すように、MgCO3、NiOおよびTiO2の各粉末を熱処理せずにそのまま添加したことを除いて、実施例1−1の場合と同様に、比較例1−2に係る誘電体原料配合物を得た。
表1の「比較例1−3」に示すように、BaCO3およびSiO2の各粉末を熱処理せずにそのまま添加し、かつ、MgCO3、NiOおよびTiO2の各粉末を熱処理せずにそのまま添加したことを除いて、実施例1−1の場合と同様に、比較例1−3に係る誘電体原料配合物を得た。
上記誘電体原料配合物に、ポリビニルブチラール系バインダおよびエタノールを加えて、ボールミルにより湿式混合し、セラミックスラリーを得た。このセラミックスラリーをドクターブレード法によりシート成形し、得られたセラミックグリーンシートを所定の形状にカットし、矩形のセラミックグリーンシートを得た。
誘電率を、温度25℃、1kHz、0.5Vrmsの条件下で測定した。
表2にセラミック微構造分析の結果が、表3に特性評価の結果が示されている。
実験例2では、主成分の組成を変更することによる影響を調べた。すなわち、実験例2では、ABO3として表4に示すいくつかの組成のものを用いた。
まず、出発原料として、BaCO3、CaCO3、SrCO3、TiO2、ZrO2およびHfO2の各粉末を準備し、これら粉末を、表4の「主成分」の欄に示す組成になるように秤量し、次いで、ボールミルにより混合し、1100〜1200℃の温度で熱処理し、ABO3粉末を得た。その平均粒径は0.11〜0.17μmであった。
実験例1の場合と同様の操作を経て、同様の仕様を有する、各試料に係る積層セラミックコンデンサを得た。
実験例1の場合と同様の特性評価およびセラミック微構造分析を行なった。
表5にセラミック微構造分析の結果が、表6に特性評価の結果が示されている。
実験例3では、副成分の種類および量を変更することによる影響を調べた。
まず、出発原料として、BaCO3、CaCO3、TiO2およびZrO2の各粉末を準備し、これら粉末を、(Ba0.95Ca0.05)(Ti0.995Zr0.005)O3の組成になるように秤量し、次いで、ボールミルにより混合し、1150℃の温度で熱処理し、(Ba0.95Ca0.05)(Ti0.995Zr0.005)O3粉末を得た。その平均粒径は0.16μmであった。
実験例1の場合と同様の操作を経て、同様の仕様を有する、各試料に係る積層セラミックコンデンサを得た。
実験例1の場合と同様の特性評価およびセラミック微構造分析を行なった。
表9にセラミック微構造分析の結果が、表10に特性評価の結果が示されている。
2 誘電体セラミック層
3,4 内部電極
5 コンデンサ本体
6,7 外部電極
11 BaTiO3結晶粒子
12 Mg−Ni−Ti−O系結晶性酸化物粒子
13 Ba−Si−O系結晶性酸化物粒子
Claims (6)
- 結晶粒子と結晶粒界とを含み、
ABO3(Aは、Ba、またはBaならびにSrおよびCaの少なくとも一方を含む。Bは、Ti、またはTiならびにZrおよびHfの少なくとも一方を含む。)で表されるペロブスカイト型化合物を主成分とする組成を有する、誘電体セラミックであって、
前記結晶粒子は、前記主成分からなるABO3系結晶粒子を含むとともに、二次相として、少なくともMg、NiおよびTiを含む結晶性酸化物からなるMg−Ni−Ti含有結晶性粒子と、少なくともBaおよびSiを含む結晶性酸化物からなるBa−Si含有結晶性粒子とを含むことを特徴とする、誘電体セラミック。 - 副成分として、R(Rは、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、LuおよびYのうちの少なくとも1種を含む。)、M(Mは、Mg、Ni、Mn、Co、Fe、Cr、Cu、Al、Mo、WおよびVのうちの少なくとも1種を含む。)、ならびにSiをさらに含む、請求項1に記載の誘電体セラミック。
- 前記Rの総量は、前記主成分100モル部に対し0.1〜3.0モル部であり、前記Mの総量は、前記主成分100モル部に対し0.2〜5.0モル部である、請求項2に記載の誘電体セラミック。
- 前記主成分ABO3において、Baは78〜100モル%、Srは0〜2モル%、Caは0〜20モル%、Tiは96〜100モル%、Zrは0〜2モル%、およびHfは0〜2モル%である、請求項1ないし3のいずれかに記載の誘電体セラミック。
- 積層された複数の誘電体セラミック層および前記誘電体セラミック層間の特定の界面に沿って形成される複数の内部電極をもって構成される、コンデンサ本体と、前記コンデンサ本体の外表面上の互いに異なる位置に形成される、第1および第2の外部電極とを備え、前記内部電極は、前記第1の外部電極に電気的に接続されるものと前記第2の外部電極に電気的に接続されるものとが積層方向に関して交互に配置されている、積層セラミックコンデンサであって、
前記誘電体セラミック層が請求項1ないし4のいずれかに記載の誘電体セラミックから構成される、積層セラミックコンデンサ。 - 前記内部電極はNiを主成分とする、請求項5に記載の積層セラミックコンデンサ。
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