CN115483026A - 多层陶瓷电容器 - Google Patents

多层陶瓷电容器 Download PDF

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Publication number
CN115483026A
CN115483026A CN202211320033.5A CN202211320033A CN115483026A CN 115483026 A CN115483026 A CN 115483026A CN 202211320033 A CN202211320033 A CN 202211320033A CN 115483026 A CN115483026 A CN 115483026A
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dielectric
main component
base material
multilayer ceramic
100mol
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CN202211320033.5A
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朴柾玧
朴宰成
金庆植
赵志弘
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Samsung Electro Mechanics Co Ltd
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Samsung Electro Mechanics Co Ltd
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Publication of CN115483026A publication Critical patent/CN115483026A/zh
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Abstract

提供一种多层陶瓷电容器。多层陶瓷电容器包括陶瓷主体，陶瓷主体包括介电层，介电层包含含有介电陶瓷组合物的电介质晶粒，介电陶瓷组合物包括基体材料主成分和副成分，基体材料主成分包括从BaTiO3、(Ba1‑xCax)(Ti1‑yCay)O3(0≤x≤0.3，0≤y≤0.1)、(Ba1‑xCax)(Ti1‑yZry)O3(0≤x≤0.3，0≤y≤0.5)和Ba(Ti1‑yZry)O3(0<y≤0.5)中选择的至少一种化合物，副成分包含Dy和Pr，基于100mol％的基体材料主成分，Pr的含量满足0.233mol％≤Pr≤0.699mol％，Dy和Pr的总含量小于或等于1.0mol％。

Description

多层陶瓷电容器
本申请是申请日为2020年04月27日、申请号为202010342515.5的发明名称“介电陶瓷组合物和包括其的多层陶瓷电容器”的发明专利申请的分案申请。
技术领域
本公开涉及一种介电陶瓷组合物和包括该介电陶瓷组合物的多层陶瓷电子组件。
背景技术
诸如电容器、电感器、压电元件、压敏电阻、热敏电阻等的使用陶瓷材料的电子组件包括利用陶瓷材料形成的陶瓷主体、形成在陶瓷主体中的内电极以及安装在陶瓷主体的表面上以连接到内电极的外电极。
由于近来存在使电子产品以及片式组件小型化和多功能化的趋势，因此存在对尺寸较小但具有较大电容的多层陶瓷电容器的需要。
既使多层陶瓷电容器小型化同时又增大其电容的方法是减小介电层和内电极层的厚度以层叠更多数量的层。目前，介电层的厚度为约0.6μm，并且已经在努力开发更薄的介电层。
在这样的情况下，确保介电层的可靠性正成为介电材料的主要问题。另外，由于介电材料的绝缘电阻的劣化增加，因此在管理质量和良率中的难点成为问题。
为了解决这样的问题，需要开发一种新的方法，该方法用于确保不仅针对多层陶瓷电容器的结构而且针对介电组合物的高的可靠性。
当确保能够改善目前的可靠性的介电组合物时，可制造较薄的多层陶瓷电容器。
发明内容
本公开的一方面在于提供一种能够改善可靠性的介电陶瓷组合物和包括该介电陶瓷组合物的多层陶瓷电容器。
根据本公开的一方面，一种介电陶瓷组合物包括钛酸钡(BaTiO3)基基体材料主成分和副成分，所述副成分包含作为第一副成分的镝(Dy)和镨(Pr)。基于100mol％的所述钛酸钡基基体材料主成分，Pr的含量满足0.233mol％≤Pr≤0.699mol％。
根据本公开的另一方面，一种多层陶瓷电容器包括：陶瓷主体，包括介电层以及第一内电极和第二内电极，所述第一内电极和所述第二内电极设置为彼此面对且相应的介电层介于所述第一内电极和所述第二内电极之间；以及第一外电极和第二外电极，设置在所述陶瓷主体的外表面上，所述第一外电极连接到所述第一内电极并且所述第二外电极连接到所述第二内电极。所述介电层包含含有介电陶瓷组合物的电介质晶粒。所述介电陶瓷组合物包括钛酸钡(BaTiO3)基基体材料主成分和副成分，所述副成分包含作为第一副成分的镝(Dy)和镨(Pr)。基于100mol％的所述钛酸钡基基体材料主成分，Pr的含量满足0.233mol％≤Pr≤0.699mol％。
附图说明
通过以下结合附图进行的详细描述，将更清楚地理解本公开的以上和其他方面、特征和优点，在附图中：
图1是根据本公开中的示例的多层陶瓷电容器的示意性透视图；
图2是沿着图1的I-I′线截取的截面图；以及
图3是示出根据本公开中的实施例和比较示例的温度相关的介电常数结果的曲线图。
具体实施方式
在下文中，将参照附图如下描述本公开的实施例。然而，本公开可按照许多不同的形式呈现，并且不应该解释为限于这里阐述的实施例。更确切地说，提供这些实施例使得本公开将是彻底的和完整的，并且将要把本公开的范围充分地传达给本领域技术人员。在附图中，为了清楚起见，可夸大元件的形状和尺寸，并且相同的附图标记将始终用于指示相同或相似的元件。
图1是根据本公开中的实施例的多层陶瓷电容器的示意性透视图。
图2是沿着图1的I-I′线截取的截面图。
参照图1和图2，根据实施例的多层陶瓷电容器100包括：陶瓷主体110，包括介电层111以及设置为彼此面对的第一内电极121和第二内电极122，且相应的介电层介于第一内电极121和第二内电极122之间；以及第一外电极131和第二外电极132，设置在陶瓷主体110的外表面上。第一外电极131电连接到第一内电极121，第二外电极132电连接到第二内电极122。
关于根据实施例的多层陶瓷电容器100，“长度方向”、“宽度方向”和“厚度方向”将分别被定义为“L”方向、“W”方向和“T”方向。“厚度方向”可按照与介电层堆叠所沿的方向(例如，“层叠方向”)的含义相同的含义使用。
虽然没有限制于具体形状，但是陶瓷主体110的构造可以是如附图中所示的矩形长方体形状。
形成在陶瓷主体110内部的多个内电极121和122具有暴露到陶瓷主体110的一个表面或者陶瓷主体110的与所述一个表面背对设置的另一表面的一端。
内电极121和122可包括具有彼此相反极性的成对的第一内电极121和第二内电极122。
第一内电极121的一端可暴露到陶瓷主体的一个表面，第二内电极122的一端可暴露到陶瓷主体的与所述一个表面背对设置的另一表面。
第一外电极131和第二外电极132设置在陶瓷主体110的彼此背对设置的一个表面和另一表面上，以电连接到内电极。
第一内电极121和第二内电极122的材料没有限制，并且可以是包含例如银(Ag)、铅(Pb)、铂(Pt)、镍(Ni)和铜(Cu)中的至少一种的导电膏。
第一外电极131和第二外电极132可分别电连接到第一内电极121和第二内电极122以形成电容。第二外电极132可连接到与连接到第一外电极131的电位不同的电位。
包含在第一外电极131和第二外电极132中的导电材料没有限制，而可以是镍(Ni)、铜(Cu)或它们的合金。
第一外电极131和第二外电极132的厚度可根据其用途等合适地确定，并没有限制，而可以是，例如，10μm至50μm。
根据实施例，介电层111的材料没有限制，只要可获得足够的电容即可，并且可以是，例如，钛酸钡(BaTiO3)粉末颗粒。
介电层111的材料可包括添加到BaTiO3粉末颗粒等中的各种添加剂、有机溶剂、增塑剂、粘合剂、分散剂等。
处于烧结状态的介电层111可彼此一体化，使得相邻介电层111之间的边界可以不是显而易见的。
第一内电极121和第二内电极122可形成在介电层111上，并且内电极121和122可通过烧结与介于内电极121和122之间的介电层一起形成在陶瓷主体110内部。
介电层111的厚度可根据电容器的电容设计而可选择地改变。在实施例中，具体地，烧结之后的每个介电层的厚度可以是0.4μm或更小。
此外，具体地，烧结之后的第一内电极121的厚度和第二内电极122的厚度可以是0.4μm或更小。
根据实施例，介电层111包括包含介电陶瓷组合物的电介质晶粒，并且介电陶瓷组合物包括钛酸钡(BaTiO3)基基体材料主成分和副成分，其中，副成分包含作为第一副成分的镝(Dy)和镨(Pr)。基于100mol％的基体材料主成分，Pr的含量满足0.233mol％≤Pr≤0.699mol％。
近来，为了开发超小型高电容多层陶瓷电容器，需要开发对于固溶了添加剂的BaTiO3基基体材料主成分在形成具有相同尺寸的晶粒时可通过提高畴壁(domain wall)移动性实现高介电常数的介电组合物的组成。
有研究结果表明，当应用供主型(Donor-type)掺杂剂成分时，晶格中钉扎源(pinning source)的浓度降低，从而促进畴之间的移动。
为此，在已知的供主型掺杂剂中，可应用具有与钡(Ba)的离子尺寸最相似的离子尺寸的添加剂，以显著减少晶格失配，并开发允许实现高k介电常数的介电组合物。
通常，当增加供主型掺杂剂的含量时，绝缘电阻(IR)降低，并且难以确保抗还原性。因此，倾向于选择适当的含量比。
对提高多层陶瓷电容器的介电常数和可靠性有影响的最常用的供主型掺杂剂是镝(Dy)。可适当调节供主型掺杂剂和受主型(Accepter-type)掺杂剂，以实现期望的介电特性和可靠性。
本发明人发明了包括作为+3价以上的稀土元素的镨(Pr)的介电组合物，以化学方法抑制氧空位的形成、氧缺陷并降低其浓度。
因为Pr元素的离子半径大约在钡(Ba)元素(主要元素)的离子半径和镝(Dy)元素(供主型掺杂剂)的离子半径之间，因此，镨(Pr)元素有效地在Ba元素的位点进行取代并被固溶。
在实施例中，与表现稳定介电特性的Dy元素一起应用Pr元素，并且选择最优的含量比，以确保高k介电常数并改善可靠性。
根据实施例，介电陶瓷组合物包括BaTiO3基基体材料主成分和副成分，副成分包含作为第一副成分的镝(Dy)和镨(Pr)。基于100mol％的基体材料主成分，镨(Pr)的含量满足0.233mol％≤Pr≤0.699mol％。
基于100mol％的基体材料主成分，镨(Pr)的含量可调节为满足0.233mol％≤Pr≤0.699mol％。因此，可确保高k介电常数，并且可实现可靠性改善(诸如，绝缘电阻提高)。
根据实施例，包括在陶瓷主体中的介电层的介电陶瓷组合物包括作为副成分的稀土元素镝(Dy)和镨(Pr)。可控制镝(Dy)和镨(Pr)的含量，以确保高k介电常数并实现可靠性改善(诸如，绝缘电阻提高)。
当基于100mol％的基体材料主成分，镨(Pr)的含量小于0.233mol％时，与仅包括镝(Dy)的情况相比，增大介电常数的效果不大。
当基于100mol％的基体材料主成分，镨(Pr)的含量高于0.699mol％时，绝缘电阻会由于半导体化而降低。
根据实施例，基于100mol％的基体材料主成分，镝(Dy)和镨(Pr)的总含量可以为1.0mol％或更小。
通常，随着稀土元素的总含量增大，在可靠性方面是更有利的，但是在Tc变动至室温时温度特性劣化。因此，具体地，基于100mol％的基体材料主成分，镝(Dy)和镨(Pr)的含量可调节为小于1.0mol％。
当基于100mol％的基体材料主成分，镝(Dy)和镨(Pr)的含量高于1.0mol％时，诸如电容温度系数(TCC)的温度特性会劣化。
根据实施例，所述第一副成分还包括包含镧(La)的氧化物或碳酸盐，并且镧(La)可位于电介质晶粒的晶粒边界处。
当使用离子半径大于镝(Dy)的离子半径的稀土元素(例如，镧(La))时，镧(La)可有效地取代钡(Ba)的位点。因此，更有效降低氧空位缺陷浓度。
因此，为了改善可靠性，还可包括镧(La)作为第一副成分，以确保绝缘电阻同时显著降低氧空位缺陷浓度。
然而，当镧(La)的含量过多时，绝缘电阻因过度半导体化而迅速下降。因此，具体地，基于100mol％的基体材料主成分，镧(La)的含量可以是大于等于0.233mol％且小于等于0.699mol％。
如上所述，根据实施例的多层陶瓷电容器100是超小型高电容产品，介电层111的厚度为0.4μm或更小，第一内电极121和第二内电极122中的每个的厚度为0.4μm或更小。然而，它们的厚度不限于此。
另外，多层陶瓷电容器100的尺寸可以为1005(长×宽，1.0mm×0.5mm)或更小。
例如，由于根据实施例的多层陶瓷电容器100是超小型高电容产品，因此介电层111以及第一内电极121和第二内电极122中的每个的厚度小于根据现有技术的产品的介电层以及第一内电极和第二内电极中的每个的厚度。在应用了薄介电层和薄内电极的产品的情况下，对诸如绝缘电阻提高的可靠性改善的研究是非常重要的问题。
例如，由于根据现有技术的多层陶瓷电容器包括的介电层和内电极的厚度大于根据示例的多层陶瓷电容器的介电层和内电极的厚度，因此即使在介电陶瓷组合物的组成与根据现有技术的组成相同时，可靠性也没有显著问题。
然而，在如实施例中应用了薄介电层和薄内电极的产品中，多层陶瓷电容器的可靠性是重要的问题，为此，需要调节介电陶瓷组合物的组成。
例如，在实施例中，基于100mol％的基体材料主成分，包括了含量为1.0mol％或更少的镝(Dy)和镨(Pr)作为第一副成分，且基于100mol％的基体材料主成分，镨(Pr)的含量调节为满足0.233mol％≤Pr≤0.699mol％。因此，即使在介电层111是厚度为0.4μm或更小的薄膜的情况下，也可实现诸如绝缘电阻提高的可靠性改善。
然而，“薄膜”不意味着介电层111以及第一内电极121和第二内电极122中的每个的厚度为0.4μm或更小的事实，并且可以被理解为介电层111以及第一内电极121和第二内电极122的厚度小于根据现有技术的产品的介电层以及第一内电极和第二内电极的厚度。
在下文中，将进一步详细描述根据实施例的介电陶瓷组合物的每个成分。
(A)基体材料主成分
根据实施例的介电陶瓷组合物可包括由BaTiO3表示的基体材料主成分。
根据实施例，基体材料主成分包括从由(Ba1-xCax)(Ti1-yCay)O3(其中，0≤x≤0.3且0≤y≤0.1)、(Ba1-xCax)(Ti1-yZry)O3(其中，0≤x≤0.3且0≤y≤0.5)和Ba(Ti1-yZry)O3(0<y≤0.5)组成的组中选择的一种，但不限于此。
根据实施例的介电陶瓷组合物可具有2000或更大的室温介电常数。
基体材料主成分不被限制，但主成分粉末颗粒的平均粒径可以是大于等于40nm且小于等于150nm。
(B)第一副成分
根据实施例，介电陶瓷组合物基本上包括镝(Dy)和镨(Pr)作为第一副成分，并且，基于100mol％的基体材料主成分，还可包括大于等于0.233mol％且小于等于0.699mol％的镧(La)的氧化物或碳酸盐。
第一副成分可用于防止应用了根据实施例的介电陶瓷组合物的多层陶瓷电容器的可靠性劣化。
当基于100mol％的基体材料主成分，镧(La)的含量小于0.233mol％时，没有提高介电常数的效果。当基于100mol％的基体材料主成分，镧(La)的含量高于0.699mol％时，绝缘电阻会降低，或者损耗因数(dissipation factor)会降低。
根据实施例，基于100mol％的基体材料主成分，第一副成分可包括含量为1.0mol％或更少的镝(Dy)和镨(Pr)，并且基于100mol％的基体材料主成分，镨(Pr)的含量可调节为满足0.233mol％≤Pr≤0.699mol％。因此，即使在介电层111是厚度为0.4μm或更小的薄膜时，也可实现诸如绝缘电阻提高等的可靠性改善。
当基于100mol％的基体材料主成分，镨(Pr)的含量小于0.233mol％时，与仅包括镝(Dy)的现有技术的情况相比，增大介电常数的效果不大。
当基于100mol％的基体材料主成分，镨(Pr)的含量高于0.699mol％时，绝缘电阻会因半导体化而降低。
(C)第二副成分
根据实施例，介电陶瓷组合物可包括包含Mn、V、Cr、Fe、Ni、Co、Cu和Zn中的至少一种的氧化物或碳酸盐作为第二副成分。
基于100mol％的基体材料主成分，可包括含量为0.1mol％至2.0mol％的包含Mn、V、Cr、Fe、Ni、Co、Cu和Zn中的至少一种的氧化物或碳酸盐作为第二副成分。
第二副成分可用于降低应用了所述介电陶瓷组合物的多层陶瓷电容器的烧结温度，以及改善高温耐受电压特性。
第二副成分的含量以及随后描述的第三副成分的含量和第四副成分的含量可被限定为其基于100摩尔的基体材料主成分所包括的含量，具体地，可被限定为各个副成分中包括的金属离子的摩尔数。
当基于100mol％的基体材料主成分，第二副成分的含量小于0.1mol％时，烧结温度会升高，并且高温耐受电压特性会稍微劣化。
当基于100mol％的基体材料主成分，第二副成分的含量高于2.0mol％时，高温耐受电压特性会劣化且室温电阻率会降低。
具体地，基于100mol％的基体材料主成分，根据实施例的介电陶瓷组合物可包括含量为0.1mol％至2.0mol％的第二副成分。因此，可执行低温烧结，并且可获得高温耐受电压特性。
(D)第三副成分
根据实施例，介电陶瓷组合物可包括第三副成分，第三副成分是包含固定价受主元素镁(Mg)的氧化物或碳酸盐。
基于100mol％的基体材料主成分，可包括0.001mol％至0.5mol％的固定价受主元素Mg作为第三副成分。
第三副成分是固定价受主元素或包括其的化合物，并且可用作受主来降低电子浓度。通过基于100mol％的基体材料主成分，添加0.001mol％至0.5mol％的固定价受主元素Mg作为第三副成分，可显著提高通过n型化获得的可靠性改善效果。
当基于100mol％的基体材料主成分，第三副成分的含量高于0.5mol％时，介电常数会降低，这是不利的。
根据实施例，基于100mol％的基体材料主成分，可添加0.5mol％的第三副成分，以显著提高通过n型化获得的可靠性改善效果。然而，第三副成分的含量不限于此，基于100mol％的基体材料主成分，可以以0.5mol％或更小的少量添加第三副成分。
(E)第四副成分
根据实施例，介电陶瓷组合物可包括包含硅(Si)和铝(Al)中的至少一种的氧化物或包含Si的玻璃化合物作为第四副成分。
基于100mol％的基体材料主成分，介电陶瓷组合物还可包括0.001mol％至4.0mol％的为包含Si和Al中的至少一种的氧化物或包含Si的玻璃化合物的第四副成分。
第四副成分的含量可以基于第四副成分中包括的Si和Al中的至少一种的含量，而不区分诸如玻璃、氧化物或碳酸盐的添加形式。
第四副成分可用于降低应用了所述介电陶瓷组合物的多层陶瓷电容器的烧结温度，并且改善高温耐受电压特性。
当基于100摩尔的基体材料主成分，第四副成分的含量高于4.0摩尔时，烧结性和密度会降低，并且会产生第二相，这是不利的。
具体地，根据实施例，基于100摩尔的基体材料主成分，介电陶瓷组合物可包括含量为4.0摩尔或更少的铝(Al)。因此，可均匀地控制晶粒生长，以有效地改善耐受电压特性和可靠性，并改善DC偏置特性。
在下文中，将参照实施例和比较示例更充分地描述本公开，实施例和比较示例旨在帮助详细理解本公开，但本公开的范围不被实施例限制。
实施例
在实施例中，介电层可通过以下步骤形成：向包括钛酸钡(BaTiO3)粉末颗粒的介电材料粉末颗粒中添加添加剂(例如Dy、Pr、La、Al、Mg、Mn等)、粘合剂、有机溶剂(例如乙醇)等，执行湿法混合以制备电介质浆料，并且将电介质浆料涂覆并干燥在载体膜上，以形成陶瓷生片。
在这种情况下，尺寸为钛酸钡的40％或更小的所有元素的添加剂中的每种被单分散并被添加。
具体地，基于100mol％的基体材料主成分，稀土元素中的镝(Dy)和镨(Pr)的含量小于1.0mol％。
实施例包括实施例1、实施例2和实施例3。在实施例1中，陶瓷生片通过添加0.699mol％的镝(Dy)和0.233mol％的镨(Pr)而形成。在实施例2中，陶瓷生片通过添加0.466mol％的镝(Dy)和0.466mol％的镨(Pr)而形成。在实施例3中，陶瓷生片通过添加0.233mol％的镝(Dy)和0.699mol％的镨(Pr)而形成。
可通过以下方法形成陶瓷生片：混合陶瓷粉末颗粒、粘合剂和溶剂，以制备浆料；使用刮刀法将浆料制造为具有几微米(μm)厚度的片的形式。
然后，制备用于内电极的导电膏。基于100重量份的导电膏，导电膏可包括40重量份至50重量份的镍粉末颗粒，镍粉末颗粒具有0.1μm至0.2μm的平均粒径。
使用丝网印刷法将用于内电极的导电膏涂覆到陶瓷生片上，以形成内电极。层压其上形成有内电极图案的生片，以形成层叠体，之后压制和切割层叠体。
然后，对切割的层叠体进行加热，以去除粘合剂，并且在高温还原气氛下进行烧结，以形成陶瓷主体。
在烧结工艺期间，通过在1100℃至1200℃的还原气氛(0.1％H2/99.9％N2、H2O/H2/N2气氛)下烧结2小时，之后在1000℃的氮气(N2)气氛下再氧化3小时来执行热处理。
使用铜膏对烧结的陶瓷主体执行封端工艺和电极烧结，并形成外电极。
另外，陶瓷主体110内部的介电层111以及第一内电极121和第二内电极122中的每者形成为在烧结之后具有小于或等于0.4μm的厚度。
(比较示例1)
在作为根据现有技术的示例的比较示例1的情况下，基于100mol％的基体材料主成分，添加0.932mol％的镝(Dy)，其他制造工艺与以上实施例中描述的相同。
(比较示例2)
在比较示例2的情况下，基于100mol％的基体材料主成分，添加0.932mol％的镨(Pr)，其他制造工艺与以上实施例中描述的相同。
对上述完成的作为原型多层陶瓷电容器(MLCC)样品的实施例1至3和比较示例1至2测试介电常数、损耗因数(DF)和绝缘电阻(IR)，并对其结果进行了评估。
分别在三种条件下执行测试。测试1、测试2和测试3的条件分别是1140℃(平均1135℃)、1160℃(平均1157℃)和1180℃(平均1172℃)。
表1列出了根据试验示例(实施例1至3以及比较示例1和2)的原型多层陶瓷电容器(MLCC)片的介电常数、损耗因数(DF)和绝缘电阻(IR)。
表1
Figure BDA0003909915710000101
Figure BDA0003909915710000111
DF：损耗因数/IR：绝缘电阻/DC：介电常数
如从表1可以看出，在比较示例1(基于100mol％的基体材料主成分，添加0.932mol％的镝(Dy))的情况下，介电常数DC较低且绝缘电阻IR高。
在比较示例2(基于100mol％的基体材料主成分，镨(Pr)的含量高于0.699mol％)的情况下，呈现出半导体化趋势，损耗因数DF是有问题的，并且绝缘电阻IR劣化。
另一方面，在本公开的实施例1至3中，基于100mol％的基体材料主成分，镝(Dy)和镨(Pr)的总含量为1.0mol％或更小，且镨(Pr)的含量满足0.233mol％≤Pr≤0.699mol％。可确保高k介电常数，并且可实现诸如绝缘电阻提高等的可靠性改善。
图3是示出根据本公开中的实施例和比较示例的温度相关的介电常数结果的曲线图。
如从图3可以看出，在实施例示例1至3(基于100mol％的基体材料主成分，镨(Pr)的含量满足0.233mol％≤Pr≤0.699mol％)的情况下，温度相关的介电常数的增大大于比较示例1的温度相关的介电常数的增大。
在比较示例2(基于100mol％的基体材料主成分，镨(Pr)的含量为0.932mol％)的情况下，介电常数高，但呈现出半导体化趋势，使绝缘电阻降低。因此，可靠性是有问题的。
如上所述，包含在陶瓷主体内部的介电层中的介电陶瓷组合物可包括新的稀土元素镨(Pr)作为副成分，并且可控制镨(Pr)的含量以确保高k介电常数，且可实现诸如绝缘电阻提高的可靠性改善。
虽然以上已经示出并描述了示例实施例，但是对于本领域技术人员来说将显而易见的是，在不脱离由所附权利要求限定的本公开的范围的情况下，可做出修改和变形。

Claims (9)

1.一种多层陶瓷电容器，包括：
陶瓷主体，包括介电层以及第一内电极和第二内电极，所述第一内电极和所述第二内电极设置为彼此面对且相应的介电层介于所述第一内电极和所述第二内电极之间；以及
第一外电极和第二外电极，设置在所述陶瓷主体的外表面上，所述第一外电极电连接到所述第一内电极并且所述第二外电极电连接到所述第二内电极，
其中，所述介电层包含含有介电陶瓷组合物的电介质晶粒，并且
所述介电陶瓷组合物包括基体材料主成分和副成分，所述基体材料主成分包括从由BaTiO3、(Ba1-xCax)(Ti1-yCay)O3(其中，0≤x≤0.3，0≤y≤0.1)、(Ba1-xCax)(Ti1-yZry)O3(其中，0≤x≤0.3，0≤y≤0.5)和Ba(Ti1-yZry)O3(其中，0<y≤0.5)组成的组中选择的至少一种化合物，所述副成分包含作为第一副成分的Dy和Pr，并且
其中，基于100mol％的所述基体材料主成分，Pr的含量满足0.233mol％≤Pr≤0.699mol％，并且
其中，基于100mol％的所述基体材料主成分，Dy和Pr的总含量小于或等于1.0mol％。
2.如权利要求1所述的多层陶瓷电容器，其中，所述第一副成分还包括包含La的氧化物或碳酸盐。
3.如权利要求2所述的多层陶瓷电容器，其中，基于100mol％的所述基体材料主成分，所述介电陶瓷组合物还包括0.1mol％至2.0mol％的第二副成分，所述第二副成分包括包含Mn、V、Cr、Fe、Ni、Co、Cu和Zn中的至少一种的氧化物或碳酸盐。
4.如权利要求3所述的多层陶瓷电容器，其中，基于100mol％的所述基体材料主成分，所述介电陶瓷组合物还包括0.001mol％至0.5mol％的第三副成分，所述第三副成分包括包含固定价受主元素Mg的氧化物或碳酸盐。
5.如权利要求4所述的多层陶瓷电容器，其中，基于100mol％的所述基体材料主成分，所述介电陶瓷组合物还包括0.001mol％至4.0mol％的第四副成分，所述第四副成分包括Si和Al中的至少一种的氧化物或含Si的玻璃复合物。
6.如权利要求5所述的多层陶瓷电容器，其中，所述介电层的厚度为0.4μm或更小。
7.如权利要求6所述的多层陶瓷电容器，其中，所述内电极的厚度为0.4μm或更小。
8.如权利要求7所述的多层陶瓷电容器，其中，基于100mol％的所述基体材料主成分，La的含量大于等于0.233mol％且小于等于0.699mol％。
9.如权利要求1-8中的任一项所述的多层陶瓷电容器，其中，所述多层陶瓷电容器的尺寸为1005或更小。
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