JP2010018513A - 結晶性シリコン基板の精製方法および太陽電池の製造プロセス - Google Patents
結晶性シリコン基板の精製方法および太陽電池の製造プロセス Download PDFInfo
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- JP2010018513A JP2010018513A JP2009160416A JP2009160416A JP2010018513A JP 2010018513 A JP2010018513 A JP 2010018513A JP 2009160416 A JP2009160416 A JP 2009160416A JP 2009160416 A JP2009160416 A JP 2009160416A JP 2010018513 A JP2010018513 A JP 2010018513A
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- 239000000758 substrate Substances 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 43
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 230000008569 process Effects 0.000 title claims description 5
- 239000012535 impurity Substances 0.000 claims abstract description 47
- 238000005247 gettering Methods 0.000 claims abstract description 18
- 238000009792 diffusion process Methods 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052698 phosphorus Inorganic materials 0.000 claims description 21
- 239000011574 phosphorus Substances 0.000 claims description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 20
- 238000001816 cooling Methods 0.000 claims description 17
- 238000000746 purification Methods 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 13
- 238000000137 annealing Methods 0.000 abstract description 18
- 229910052751 metal Inorganic materials 0.000 description 24
- 239000002184 metal Substances 0.000 description 24
- 235000012431 wafers Nutrition 0.000 description 16
- 239000002244 precipitate Substances 0.000 description 10
- 239000006104 solid solution Substances 0.000 description 10
- 238000000605 extraction Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 150000003376 silicon Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000005094 computer simulation Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241001201615 Polix Species 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Silicon Compounds (AREA)
Abstract
【解決手段】結晶性シリコン基板の精製方法は、外部ゲッタリングにより不純物を抽出するステップを含み、外部ゲッタリングにより不純物を抽出する前記ステップの前に、少なくとも1回の、750℃から1000℃までの間の温度で、1秒から10分までの間の時間、基板を急速にアニーリングするステップを含む方式。
【選択図】なし
Description
a)反射率を低下させ、光閉じ込めが得られるように、一般的には、KOHの固溶体で処理することにより、結晶性シリコン基板の表面をテクスチャー化するステップ;
b)p−n接合を創製するように、リン拡散によりn+層を形成するステップ;
c)反射防止層を創製し、前面を不動態化し、さらに基板の体積を不動態化するための水素貯蔵体として働くように、水素化窒化珪素SiN−Hの層を、PECVD(プラズマエンハンスト化学気相成長法)により堆積するステップ;
d)接点は、一般には、前面では銀で、裏面ではアルミニウムで作られるが、スクリーン印刷でこうした接点を付着させるステップ;
e)シリコン中に接点を固定するために、赤外ランプ炉中で接点をアニーリングするステップ。
f)例えば、レーザーもしくはプラズマで、または他にはカプセル化もしくは任意の他のエッチング手段で、接合を開くステップ
となる。
Polix(登録商標)結晶化方法により得た、ボロンをドープした多結晶性シリコンの同じインゴットから、2枚のシリコンウェハを切り出した。このシリコンインゴットは、0.5と2ohms.cmの間の抵抗率を有した。ウェハは正方形で、面積は225cm2であった。結晶粒サイズは、数mm2から数cm2の間で変化した。
上で得たウェハの1枚上で、単純なリン拡散処理を実施した。このリン拡散処理は以下の通りであった。:ウェハを、石英の容器中で垂直に保ち、その容器それ自体は、同様に石英製であるチューブ炉中に設置した。炉の温度を870℃に制御し、チューブ内は気圧の低い状態(300mbar)に保った。
このリン拡散ステップの後、n+拡散層を化学エッチング(HF/CH3COOH/HNO3混合物を用いる)によりエッチングした。このエッチングは、また、表面を化学的に研磨した。次いで、表面を、窒化珪素膜のPECVD堆積により電気的に不動態化した。次いで、Stevensonら、Appl.Phys.Lett.26巻、190頁(1955)に記載されている、μ波PCD(光導電減衰)法により、または、Sintonら、Appl.Phys.Lett.69巻、2510頁(1996)に記載されている、IC−QssPC(誘導結合−準定常状態光導電率減衰)法により、体積寿命を測定した。
調製された第2のシリコンウェハに対して、急速アニーリングステップ、すなわち、以下の2回の温度保持を有する加熱処理を、リン拡散ステップの前に実施すること以外は上記の比較例のウェハと同じ処理を施した。
− 第2の保持を885℃で15秒間。
Claims (8)
- 外部ゲッタリングにより不純物を抽出するステップを含む方式の結晶性シリコン基板の精製方法であって、該外部ゲッタリングにより不純物を抽出する前記ステップの前に、750℃から1000℃までの間の温度で、1秒から10分までの間の時間、基板を加熱する少なくとも1つのステップ、それに続き室温にまで基板を冷却するステップを含む、精製方法。
- 外部ゲッタリングにより不純物を抽出するステップがリン拡散ステップである、請求項1に記載の結晶性シリコン基板の精製方法。
- 単一の温度での単一の加熱ステップ、それに続き室温にまで基板を冷却するステップを含む、請求項1または2に記載の方法。
- 異なる温度で、同じかまたは異なる時間で、少なくとも2つの加熱ステップ、それに続き室温にまで基板を冷却するステップを含む、請求項1または2に記載の方法。
- 800℃と850℃の間で、1〜20秒間の加熱ステップ、および850℃と920℃の間で、1〜20秒間の加熱ステップ、それに続き室温にまで基板を冷却するステップを含む、請求項1または2または4に記載の方法。
- 結晶性シリコン基板の表面をテクスチャー化するステップを含む方式の太陽電池の製造プロセスであって、請求項1から5までのいずれか一項に記載の方法による、基板を構成している結晶性シリコンの精製をさらに含む、製造プロセス。
- 請求項1から5までのいずれか一項に記載の方法による、結晶性シリコンの精製ステップが、結晶性シリコン基板の表面をテクスチャー化するステップの前に実行される、請求項6に記載の方法。
- 請求項1から5までのいずれか一項に記載の方法による、結晶性シリコンの精製ステップが、結晶性シリコン基板の表面をテクスチャー化するステップの後に実行される、請求項6に記載の結晶性シリコンで作られる太陽電池の製造プロセス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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FR0803904A FR2933684B1 (fr) | 2008-07-09 | 2008-07-09 | Procede de purification d'un substrat en silicium cristallin et procede d'elaboration d'une cellule photovoltaique |
FR0803904 | 2008-07-09 |
Publications (2)
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JP2010018513A true JP2010018513A (ja) | 2010-01-28 |
JP5491783B2 JP5491783B2 (ja) | 2014-05-14 |
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US (1) | US8241941B2 (ja) |
EP (1) | EP2143687B1 (ja) |
JP (1) | JP5491783B2 (ja) |
ES (1) | ES2618033T3 (ja) |
FR (1) | FR2933684B1 (ja) |
Cited By (1)
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CN102732967A (zh) * | 2012-06-01 | 2012-10-17 | 上饶光电高科技有限公司 | 一种选择性发射极晶体硅太阳电池的磷浆扩散工艺 |
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FR2968316B1 (fr) * | 2010-12-01 | 2013-06-28 | Commissariat Energie Atomique | Procede de preparation d'une couche de silicium cristallise a gros grains |
US8846500B2 (en) * | 2010-12-13 | 2014-09-30 | Semiconductor Components Industries, Llc | Method of forming a gettering structure having reduced warpage and gettering a semiconductor wafer therewith |
CN102157618A (zh) * | 2011-01-30 | 2011-08-17 | 中国科学院宁波材料技术与工程研究所 | 一种低成本晶体硅太阳能电池的扩散方法 |
CN102336409A (zh) * | 2011-07-30 | 2012-02-01 | 常州天合光能有限公司 | 降低多晶硅金属杂质的方法 |
US8735204B1 (en) | 2013-01-17 | 2014-05-27 | Alliance For Sustainable Energy, Llc | Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication |
US8895416B2 (en) | 2013-03-11 | 2014-11-25 | Alliance For Sustainable Energy, Llc | Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material |
CN109935645A (zh) * | 2019-02-27 | 2019-06-25 | 镇江仁德新能源科技有限公司 | 一种干法黑硅片的高效量产制备方法 |
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US8008107B2 (en) * | 2006-12-30 | 2011-08-30 | Calisolar, Inc. | Semiconductor wafer pre-process annealing and gettering method and system for solar cell formation |
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2009
- 2009-07-03 ES ES09290535.5T patent/ES2618033T3/es active Active
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CN102732967A (zh) * | 2012-06-01 | 2012-10-17 | 上饶光电高科技有限公司 | 一种选择性发射极晶体硅太阳电池的磷浆扩散工艺 |
Also Published As
Publication number | Publication date |
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US20100041175A1 (en) | 2010-02-18 |
EP2143687A3 (fr) | 2011-11-16 |
EP2143687B1 (fr) | 2016-12-07 |
FR2933684A1 (fr) | 2010-01-15 |
ES2618033T3 (es) | 2017-06-20 |
FR2933684B1 (fr) | 2011-05-06 |
EP2143687A2 (fr) | 2010-01-13 |
JP5491783B2 (ja) | 2014-05-14 |
US8241941B2 (en) | 2012-08-14 |
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