JP2009539252A - ナノ粒子パターニングプロセス - Google Patents

ナノ粒子パターニングプロセス Download PDF

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Publication number
JP2009539252A
JP2009539252A JP2009513174A JP2009513174A JP2009539252A JP 2009539252 A JP2009539252 A JP 2009539252A JP 2009513174 A JP2009513174 A JP 2009513174A JP 2009513174 A JP2009513174 A JP 2009513174A JP 2009539252 A JP2009539252 A JP 2009539252A
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JP
Japan
Prior art keywords
pattern
nanoparticles
resist
photoresist
metal nanoparticles
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JP2009513174A
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English (en)
Japanese (ja)
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JP2009539252A5 (enExample
Inventor
リー ダブリュ タット
テレーゼ エム フェラー
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イーストマン コダック カンパニー
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Application filed by イーストマン コダック カンパニー filed Critical イーストマン コダック カンパニー
Publication of JP2009539252A publication Critical patent/JP2009539252A/ja
Publication of JP2009539252A5 publication Critical patent/JP2009539252A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2009513174A 2006-06-02 2007-05-18 ナノ粒子パターニングプロセス Pending JP2009539252A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/421,894 US7745101B2 (en) 2006-06-02 2006-06-02 Nanoparticle patterning process
PCT/US2007/012099 WO2007142809A2 (en) 2006-06-02 2007-05-18 Nanoparticle patterning process

Publications (2)

Publication Number Publication Date
JP2009539252A true JP2009539252A (ja) 2009-11-12
JP2009539252A5 JP2009539252A5 (enExample) 2010-07-08

Family

ID=38790662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009513174A Pending JP2009539252A (ja) 2006-06-02 2007-05-18 ナノ粒子パターニングプロセス

Country Status (5)

Country Link
US (1) US7745101B2 (enExample)
EP (1) EP2024790B1 (enExample)
JP (1) JP2009539252A (enExample)
TW (1) TW200809427A (enExample)
WO (1) WO2007142809A2 (enExample)

Cited By (3)

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WO2014050421A1 (ja) * 2012-09-25 2014-04-03 東レ株式会社 配線パターンの形成方法および配線パターン形成物
KR20160098638A (ko) * 2015-02-10 2016-08-19 인하대학교 산학협력단 스트레인 게이지의 제조방법 및 이에 따라 제조된 스트레인 게이지
WO2020138034A1 (ja) * 2018-12-27 2020-07-02 株式会社カネカ レジストパターンの形成に用いられる樹脂組成物、及び半導体製品の製造方法

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US10060904B1 (en) 2005-10-17 2018-08-28 Stc.Unm Fabrication of enclosed nanochannels using silica nanoparticles
US9156004B2 (en) * 2005-10-17 2015-10-13 Stc.Unm Fabrication of enclosed nanochannels using silica nanoparticles
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US10231344B2 (en) 2007-05-18 2019-03-12 Applied Nanotech Holdings, Inc. Metallic ink
US8506849B2 (en) 2008-03-05 2013-08-13 Applied Nanotech Holdings, Inc. Additives and modifiers for solvent- and water-based metallic conductive inks
US8815104B2 (en) 2008-03-21 2014-08-26 Alliance For Sustainable Energy, Llc Copper-assisted, anti-reflection etching of silicon surfaces
US8075792B1 (en) 2008-03-21 2011-12-13 Alliance For Sustainable Energy, Llc Nanoparticle-based etching of silicon surfaces
US8729798B2 (en) 2008-03-21 2014-05-20 Alliance For Sustainable Energy, Llc Anti-reflective nanoporous silicon for efficient hydrogen production
US20090236317A1 (en) * 2008-03-21 2009-09-24 Midwest Research Institute Anti-reflection etching of silicon surfaces catalyzed with ionic metal solutions
US9730333B2 (en) 2008-05-15 2017-08-08 Applied Nanotech Holdings, Inc. Photo-curing process for metallic inks
JP2010103345A (ja) * 2008-10-24 2010-05-06 Konica Minolta Holdings Inc 機能性層の製造方法及び電子デバイス
JP5435699B2 (ja) * 2009-03-06 2014-03-05 ナミックス株式会社 配線基板の製造方法、配線基板および半導体装置
KR101735710B1 (ko) * 2009-03-27 2017-05-15 어플라이드 나노테크 홀딩스, 인크. 광 및／또는 레이저 소결을 향상시키기 위한 버퍼층
US8422197B2 (en) 2009-07-15 2013-04-16 Applied Nanotech Holdings, Inc. Applying optical energy to nanoparticles to produce a specified nanostructure
US20110027719A1 (en) * 2009-07-31 2011-02-03 Pei-Chang Wang Photomask etching method for chemical vapor deposition film
EP2697820B1 (en) 2009-11-11 2018-04-04 Alliance for Sustainable Energy, LLC Wet-chemical method for producing a black silicon substrate
US8349547B1 (en) * 2009-12-22 2013-01-08 Sandia Corporation Lithographically defined microporous carbon structures
US8828765B2 (en) 2010-06-09 2014-09-09 Alliance For Sustainable Energy, Llc Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces
WO2012121706A1 (en) 2011-03-08 2012-09-13 Alliance For Sustainable Energy, Llc Efficient black silicon photovoltaic devices with enhanced blue response
ITMI20110363A1 (it) * 2011-03-09 2012-09-10 Cretec Co Ltd Metodo per ricavare un percorso conduttivo mediante irradiazione laser
US20130036925A1 (en) * 2011-08-09 2013-02-14 Moshe Nakash Offset imaging system
GB201114048D0 (en) * 2011-08-16 2011-09-28 Intrinsiq Materials Ltd Curing system
US11133118B2 (en) 2012-05-22 2021-09-28 University Of Massachusetts Patterned nanoparticle structures
US9598776B2 (en) 2012-07-09 2017-03-21 Pen Inc. Photosintering of micron-sized copper particles
JP2018530902A (ja) 2015-07-03 2018-10-18 ナショナル リサーチ カウンシル オブ カナダ 隙間が極細の配線を印刷する方法
US11185918B2 (en) 2015-07-03 2021-11-30 National Research Council Of Canada Self-aligning metal patterning based on photonic sintering of metal nanoparticles
EP3318110B1 (en) 2015-07-03 2021-01-13 National Research Council of Canada Method of printing ultranarrow line
WO2017091802A1 (en) * 2015-11-27 2017-06-01 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Pattern definition of nanocellulose sheets through selective ashing via lithographic masking
US20210325777A1 (en) 2020-04-20 2021-10-21 Applied Materials, Inc. Methods for increasing the refractive index of high-index nanoimprint lithography films
EP4284751A4 (en) 2021-01-29 2025-01-08 Armonica Technologies, Inc. Enhancement structures for surface-enhanced raman scattering
WO2023043140A1 (ko) * 2021-09-14 2023-03-23 한국화학연구원 동박 적층판용 적층체, 이의 제조방법 및 미세 패턴 형성방법

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JPH07336020A (ja) * 1994-06-10 1995-12-22 Sumitomo Metal Ind Ltd 導体パターンの形成方法
JP2006019478A (ja) * 2004-07-01 2006-01-19 Pentax Corp 描画システム
JP2006120888A (ja) * 2004-10-22 2006-05-11 Seiko Epson Corp 電子部品の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014050421A1 (ja) * 2012-09-25 2014-04-03 東レ株式会社 配線パターンの形成方法および配線パターン形成物
KR20160098638A (ko) * 2015-02-10 2016-08-19 인하대학교 산학협력단 스트레인 게이지의 제조방법 및 이에 따라 제조된 스트레인 게이지
KR101665037B1 (ko) 2015-02-10 2016-10-12 인하대학교 산학협력단 스트레인 게이지의 제조방법 및 이에 따라 제조된 스트레인 게이지
WO2020138034A1 (ja) * 2018-12-27 2020-07-02 株式会社カネカ レジストパターンの形成に用いられる樹脂組成物、及び半導体製品の製造方法
JPWO2020138034A1 (ja) * 2018-12-27 2021-11-11 株式会社カネカ レジストパターンの形成に用いられる樹脂組成物、及び半導体製品の製造方法
JP7291727B2 (ja) 2018-12-27 2023-06-15 株式会社カネカ レジストパターンの形成に用いられる樹脂組成物、及び半導体製品の製造方法

Also Published As

Publication number Publication date
EP2024790A2 (en) 2009-02-18
TW200809427A (en) 2008-02-16
US20070281249A1 (en) 2007-12-06
EP2024790B1 (en) 2012-01-11
WO2007142809A3 (en) 2008-05-08
US7745101B2 (en) 2010-06-29
WO2007142809A2 (en) 2007-12-13

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