JP2009536108A5 - - Google Patents

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Publication number
JP2009536108A5
JP2009536108A5 JP2009510107A JP2009510107A JP2009536108A5 JP 2009536108 A5 JP2009536108 A5 JP 2009536108A5 JP 2009510107 A JP2009510107 A JP 2009510107A JP 2009510107 A JP2009510107 A JP 2009510107A JP 2009536108 A5 JP2009536108 A5 JP 2009536108A5
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JP
Japan
Prior art keywords
polishing
piezoelectric material
transfer substrate
mems
opposite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009510107A
Other languages
English (en)
Japanese (ja)
Other versions
JP5466001B2 (ja
JP2009536108A (ja
Filing date
Publication date
Priority claimed from US11/744,124 external-priority patent/US7779522B2/en
Application filed filed Critical
Publication of JP2009536108A publication Critical patent/JP2009536108A/ja
Publication of JP2009536108A5 publication Critical patent/JP2009536108A5/ja
Application granted granted Critical
Publication of JP5466001B2 publication Critical patent/JP5466001B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009510107A 2006-05-05 2007-05-04 圧電材料の処理 Active JP5466001B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US74659806P 2006-05-05 2006-05-05
US60/746,598 2006-05-05
US11/744,124 US7779522B2 (en) 2006-05-05 2007-05-03 Method for forming a MEMS
US11/744,124 2007-05-03
PCT/US2007/068278 WO2007131188A1 (en) 2006-05-05 2007-05-04 Processing piezoelectric material

Publications (3)

Publication Number Publication Date
JP2009536108A JP2009536108A (ja) 2009-10-08
JP2009536108A5 true JP2009536108A5 (enExample) 2010-07-15
JP5466001B2 JP5466001B2 (ja) 2014-04-09

Family

ID=38661685

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009510107A Active JP5466001B2 (ja) 2006-05-05 2007-05-04 圧電材料の処理

Country Status (6)

Country Link
US (1) US7779522B2 (enExample)
EP (2) EP2024294B1 (enExample)
JP (1) JP5466001B2 (enExample)
KR (1) KR101440101B1 (enExample)
CN (1) CN101484398B (enExample)
WO (1) WO2007131188A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8952919B2 (en) 2011-02-25 2015-02-10 Taiwan Green Point Enterprises Co., Ltd. Capacitive touch sensitive housing and method for making the same
US20120273261A1 (en) 2010-10-20 2012-11-01 Taiwan Green Point Enterprises Co., Ltd. Circuit substrate having a circuit pattern and method for making the same
US8621749B2 (en) 2010-03-12 2014-01-07 Taiwan Green Point Enterprises Co., Ltd Non-deleterious technique for creating continuous conductive circuits
JP6347553B2 (ja) * 2013-05-31 2018-06-27 日本碍子株式会社 複合基板用支持基板および複合基板
US9437802B2 (en) 2013-08-21 2016-09-06 Fujifilm Dimatix, Inc. Multi-layered thin film piezoelectric devices and methods of making the same
US9475093B2 (en) 2013-10-03 2016-10-25 Fujifilm Dimatix, Inc. Piezoelectric ultrasonic transducer array with switched operational modes
US9525119B2 (en) 2013-12-11 2016-12-20 Fujifilm Dimatix, Inc. Flexible micromachined transducer device and method for fabricating same
NL2027189B1 (en) * 2020-11-03 2022-06-27 Corning Inc Substrate thining using temporary bonding processes
JP2023550606A (ja) * 2020-11-03 2023-12-04 コーニング インコーポレイテッド 仮結合プロセスを使用する基板の薄化
EP3993074A1 (en) * 2020-11-03 2022-05-04 Corning Incorporated Substrate thining using temporary bonding processes
FR3137792B1 (fr) * 2022-07-07 2024-10-11 Soitec Silicon On Insulator Procédé de fabrication d’une structure semi-conductrice ou piézoélectrique

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3151644B2 (ja) * 1993-03-08 2001-04-03 日本碍子株式会社 圧電／電歪膜型素子
JPH10264385A (ja) 1997-03-27 1998-10-06 Seiko Epson Corp 圧電体素子、インクジェット式記録ヘッドおよびそれらの製造方法
FR2781925B1 (fr) * 1998-07-30 2001-11-23 Commissariat Energie Atomique Transfert selectif d'elements d'un support vers un autre support
JP2000228547A (ja) * 1999-02-09 2000-08-15 Matsushita Electric Ind Co Ltd 圧電基板の製造方法
JP3065611B1 (ja) * 1999-05-28 2000-07-17 三菱電機株式会社 マイクロミラ―装置およびその製造方法
WO2001018857A1 (en) * 1999-09-03 2001-03-15 University Of Maryland, College Park Process for fabrication of 3-dimensional micromechanisms
JP2001156583A (ja) * 1999-11-30 2001-06-08 Kyocera Corp 圧電共振子
US7011134B2 (en) * 2000-10-13 2006-03-14 Chien-Min Sung Casting method for producing surface acoustic wave devices
FR2823012B1 (fr) * 2001-04-03 2004-05-21 Commissariat Energie Atomique Procede de transfert selectif d'au moins un element d'un support initial sur un support final
TW573375B (en) * 2001-12-17 2004-01-21 Intel Corp Film bulk acoustic resonator structure and method of making
JP4186494B2 (ja) * 2002-04-01 2008-11-26 セイコーエプソン株式会社 液体噴射ヘッド
US6767749B2 (en) * 2002-04-22 2004-07-27 The United States Of America As Represented By The Secretary Of The Navy Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting
US7052117B2 (en) * 2002-07-03 2006-05-30 Dimatix, Inc. Printhead having a thin pre-fired piezoelectric layer
US7089635B2 (en) * 2003-02-25 2006-08-15 Palo Alto Research Center, Incorporated Methods to make piezoelectric ceramic thick film arrays and elements
JP3774782B2 (ja) * 2003-05-14 2006-05-17 富士通メディアデバイス株式会社 弾性表面波素子の製造方法
WO2005037558A2 (en) * 2003-10-10 2005-04-28 Dimatix, Inc. Print head with thin membrane
US20060018796A1 (en) * 2004-07-21 2006-01-26 Hans Sitte Methods and apparatus for preparing multiwell sheets
US7388319B2 (en) * 2004-10-15 2008-06-17 Fujifilm Dimatix, Inc. Forming piezoelectric actuators
US7420317B2 (en) * 2004-10-15 2008-09-02 Fujifilm Dimatix, Inc. Forming piezoelectric actuators
WO2006047326A1 (en) * 2004-10-21 2006-05-04 Fujifilm Dimatix, Inc. Sacrificial substrate for etching
CN1286774C (zh) * 2005-06-02 2006-11-29 武汉理工大学 一种铌酸盐无铅压电材料

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