KR101440101B1 - 압전 물질을 프로세스하는 방법 - Google Patents

압전 물질을 프로세스하는 방법 Download PDF

Info

Publication number
KR101440101B1
KR101440101B1 KR1020087029799A KR20087029799A KR101440101B1 KR 101440101 B1 KR101440101 B1 KR 101440101B1 KR 1020087029799 A KR1020087029799 A KR 1020087029799A KR 20087029799 A KR20087029799 A KR 20087029799A KR 101440101 B1 KR101440101 B1 KR 101440101B1
Authority
KR
South Korea
Prior art keywords
piezoelectric material
polishing
mems
forming
polished
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020087029799A
Other languages
English (en)
Korean (ko)
Other versions
KR20090014193A (ko
Inventor
젠팡 첸
제프리 비르크마이어
Original Assignee
후지필름 디마틱스, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지필름 디마틱스, 인크. filed Critical 후지필름 디마틱스, 인크.
Publication of KR20090014193A publication Critical patent/KR20090014193A/ko
Application granted granted Critical
Publication of KR101440101B1 publication Critical patent/KR101440101B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H10N30/086—Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C25/00—Surface treatment of fibres or filaments made from glass, minerals or slags
    • C03C25/66—Chemical treatment, e.g. leaching, acid or alkali treatment
    • C03C25/68—Chemical treatment, e.g. leaching, acid or alkali treatment by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49126—Assembling bases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49128—Assembling formed circuit to base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Micromachines (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
KR1020087029799A 2006-05-05 2007-05-04 압전 물질을 프로세스하는 방법 Expired - Fee Related KR101440101B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US74659806P 2006-05-05 2006-05-05
US60/746,598 2006-05-05
US11/744,124 US7779522B2 (en) 2006-05-05 2007-05-03 Method for forming a MEMS
US11/744,124 2007-05-03
PCT/US2007/068278 WO2007131188A1 (en) 2006-05-05 2007-05-04 Processing piezoelectric material

Publications (2)

Publication Number Publication Date
KR20090014193A KR20090014193A (ko) 2009-02-06
KR101440101B1 true KR101440101B1 (ko) 2014-09-17

Family

ID=38661685

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087029799A Expired - Fee Related KR101440101B1 (ko) 2006-05-05 2007-05-04 압전 물질을 프로세스하는 방법

Country Status (6)

Country Link
US (1) US7779522B2 (enExample)
EP (2) EP2024294B1 (enExample)
JP (1) JP5466001B2 (enExample)
KR (1) KR101440101B1 (enExample)
CN (1) CN101484398B (enExample)
WO (1) WO2007131188A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8952919B2 (en) 2011-02-25 2015-02-10 Taiwan Green Point Enterprises Co., Ltd. Capacitive touch sensitive housing and method for making the same
US20120273261A1 (en) 2010-10-20 2012-11-01 Taiwan Green Point Enterprises Co., Ltd. Circuit substrate having a circuit pattern and method for making the same
US8621749B2 (en) 2010-03-12 2014-01-07 Taiwan Green Point Enterprises Co., Ltd Non-deleterious technique for creating continuous conductive circuits
JP6347553B2 (ja) * 2013-05-31 2018-06-27 日本碍子株式会社 複合基板用支持基板および複合基板
US9437802B2 (en) 2013-08-21 2016-09-06 Fujifilm Dimatix, Inc. Multi-layered thin film piezoelectric devices and methods of making the same
US9475093B2 (en) 2013-10-03 2016-10-25 Fujifilm Dimatix, Inc. Piezoelectric ultrasonic transducer array with switched operational modes
US9525119B2 (en) 2013-12-11 2016-12-20 Fujifilm Dimatix, Inc. Flexible micromachined transducer device and method for fabricating same
NL2027189B1 (en) * 2020-11-03 2022-06-27 Corning Inc Substrate thining using temporary bonding processes
JP2023550606A (ja) * 2020-11-03 2023-12-04 コーニング インコーポレイテッド 仮結合プロセスを使用する基板の薄化
EP3993074A1 (en) * 2020-11-03 2022-05-04 Corning Incorporated Substrate thining using temporary bonding processes
FR3137792B1 (fr) * 2022-07-07 2024-10-11 Soitec Silicon On Insulator Procédé de fabrication d’une structure semi-conductrice ou piézoélectrique

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000338445A (ja) * 1999-05-28 2000-12-08 Mitsubishi Electric Corp マイクロミラー装置およびその製造方法
US6664126B1 (en) * 1999-09-03 2003-12-16 University Of Maryland, College Park Process for fabrication of 3-dimensional micromechanisms
WO2006044329A1 (en) * 2004-10-15 2006-04-27 Fujifilm Dimatix, Inc. Microelectromechanical device with chambers and piezoelectric islands and a method of forming a device with a piezoelectric transducer

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3151644B2 (ja) * 1993-03-08 2001-04-03 日本碍子株式会社 圧電／電歪膜型素子
JPH10264385A (ja) 1997-03-27 1998-10-06 Seiko Epson Corp 圧電体素子、インクジェット式記録ヘッドおよびそれらの製造方法
FR2781925B1 (fr) * 1998-07-30 2001-11-23 Commissariat Energie Atomique Transfert selectif d'elements d'un support vers un autre support
JP2000228547A (ja) * 1999-02-09 2000-08-15 Matsushita Electric Ind Co Ltd 圧電基板の製造方法
JP2001156583A (ja) * 1999-11-30 2001-06-08 Kyocera Corp 圧電共振子
US7011134B2 (en) * 2000-10-13 2006-03-14 Chien-Min Sung Casting method for producing surface acoustic wave devices
FR2823012B1 (fr) * 2001-04-03 2004-05-21 Commissariat Energie Atomique Procede de transfert selectif d'au moins un element d'un support initial sur un support final
TW573375B (en) * 2001-12-17 2004-01-21 Intel Corp Film bulk acoustic resonator structure and method of making
JP4186494B2 (ja) * 2002-04-01 2008-11-26 セイコーエプソン株式会社 液体噴射ヘッド
US6767749B2 (en) * 2002-04-22 2004-07-27 The United States Of America As Represented By The Secretary Of The Navy Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting
US7052117B2 (en) * 2002-07-03 2006-05-30 Dimatix, Inc. Printhead having a thin pre-fired piezoelectric layer
US7089635B2 (en) * 2003-02-25 2006-08-15 Palo Alto Research Center, Incorporated Methods to make piezoelectric ceramic thick film arrays and elements
JP3774782B2 (ja) * 2003-05-14 2006-05-17 富士通メディアデバイス株式会社 弾性表面波素子の製造方法
WO2005037558A2 (en) * 2003-10-10 2005-04-28 Dimatix, Inc. Print head with thin membrane
US20060018796A1 (en) * 2004-07-21 2006-01-26 Hans Sitte Methods and apparatus for preparing multiwell sheets
US7420317B2 (en) * 2004-10-15 2008-09-02 Fujifilm Dimatix, Inc. Forming piezoelectric actuators
WO2006047326A1 (en) * 2004-10-21 2006-05-04 Fujifilm Dimatix, Inc. Sacrificial substrate for etching
CN1286774C (zh) * 2005-06-02 2006-11-29 武汉理工大学 一种铌酸盐无铅压电材料

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000338445A (ja) * 1999-05-28 2000-12-08 Mitsubishi Electric Corp マイクロミラー装置およびその製造方法
US6664126B1 (en) * 1999-09-03 2003-12-16 University Of Maryland, College Park Process for fabrication of 3-dimensional micromechanisms
WO2006044329A1 (en) * 2004-10-15 2006-04-27 Fujifilm Dimatix, Inc. Microelectromechanical device with chambers and piezoelectric islands and a method of forming a device with a piezoelectric transducer

Also Published As

Publication number Publication date
JP5466001B2 (ja) 2014-04-09
CN101484398B (zh) 2013-02-06
EP2024294A1 (en) 2009-02-18
HK1126180A1 (en) 2009-08-28
CN101484398A (zh) 2009-07-15
HK1208213A1 (en) 2016-02-26
JP2009536108A (ja) 2009-10-08
US20070259468A1 (en) 2007-11-08
EP2862846B1 (en) 2018-04-25
EP2862846A1 (en) 2015-04-22
EP2024294A4 (en) 2012-07-25
US7779522B2 (en) 2010-08-24
EP2024294B1 (en) 2015-01-14
KR20090014193A (ko) 2009-02-06
WO2007131188A1 (en) 2007-11-15

Similar Documents

Publication Publication Date Title
KR101440101B1 (ko) 압전 물질을 프로세스하는 방법
CN100533800C (zh) 具有压电块的微机电装置的制作方法
US20070257580A1 (en) Polishing Piezoelectric Material
CN101069295B (zh) 具有腔体和压电岛的微机电装置及形成具有压电换能器的装置的方法
CN101484399A (zh) 压电材料的抛光
HK1208213B (en) Processing of a piezoelectric material
HK1126180B (en) Processing piezoelectric material
HK1107872B (en) Method of fabricating a microelectromechanical device having piezoelectric blocks
HK1107873B (en) Method of forming a device with a piezoelectric transducer
HK1163345B (en) Method of forming a device with a piezoelectric transducer

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20170823

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20180816

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20190819

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20240904

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20240904