JP2009534782A - メモリ回路およびメモリ素子の感知方法 - Google Patents
メモリ回路およびメモリ素子の感知方法 Download PDFInfo
- Publication number
- JP2009534782A JP2009534782A JP2009507217A JP2009507217A JP2009534782A JP 2009534782 A JP2009534782 A JP 2009534782A JP 2009507217 A JP2009507217 A JP 2009507217A JP 2009507217 A JP2009507217 A JP 2009507217A JP 2009534782 A JP2009534782 A JP 2009534782A
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- JP
- Japan
- Prior art keywords
- current
- memory
- sense amplifier
- module
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/067—Single-ended amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/06—Sense amplifier related aspects
- G11C2207/063—Current sense amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/06—Sense amplifier related aspects
- G11C2207/065—Sense amplifier drivers
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- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
Abstract
Description
Claims (3)
- 少なくとも1個のメモリ素子と、
このメモリ素子の状態を感知するセンス増幅器と、
このセンス増幅器をメモリ素子に選択的に結合する切替えデバイスと
を備えるメモリ回路であって、
前記センス増幅器は、最大値に制限される第1電流を供給する第1モジュールと、第2電流を供給する第2モジュールを有し、前記第2電流は、感知動作開始時における最大値よりも高い値から、感知動作終了時に前記最大値より低い値に減少するものとし、また、前記メモリ回路は、前記メモリ素子に結合した切替えデバイスの側を流れる第3電流を減少せる第3モジュール(CS2)を有するものとした、メモリ回路。 - 請求項1に記載のメモリ回路において、前記センス増幅器は、このセンス増幅器の入力における電圧を所定値に制限するフィードバック素子を有するものとしたメモリ回路。
- センス増幅器を有するメモリセルを感知する方法であり、前記センス増幅器およびメモリセルを、それぞれ切替えデバイスの一方の第1側および他方の第2側に結合するものとした該感知方法において、
切替えデバイスを閉じるステップと、
切替えデバイスの前記第1側に第1電流および第2電流を供給するステップであって、前記第1電流を最大値に制限し、前記第2電流を、感知動作開始時に最大値よりも高い値から、感知動作終了時に最大値より低い値に減少するものとした、該第1および第2の電流を供給するステップと、
前記メモリ回路に結合した切替えデバイスの側に生じた第3電流を減少させるステップと
を有することを特徴とするメモリセル感知方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06112988 | 2006-04-24 | ||
PCT/IB2007/051414 WO2007122564A2 (en) | 2006-04-24 | 2007-04-19 | Memory circuit and method for sensing a memory element |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009534782A true JP2009534782A (ja) | 2009-09-24 |
JP2009534782A5 JP2009534782A5 (ja) | 2012-02-02 |
Family
ID=38521719
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009507217A Pending JP2009534782A (ja) | 2006-04-24 | 2007-04-19 | メモリ回路およびメモリ素子の感知方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7936618B2 (ja) |
EP (1) | EP2013882B1 (ja) |
JP (1) | JP2009534782A (ja) |
CN (1) | CN101427320B (ja) |
WO (1) | WO2007122564A2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10056141B2 (en) | 2014-07-30 | 2018-08-21 | Hewlett Packard Enterprise Development Lp | Current behavior of elements |
US9595304B1 (en) | 2015-12-04 | 2017-03-14 | International Business Machines Corporation | Current-mode sense amplifier |
US9792984B1 (en) * | 2016-10-27 | 2017-10-17 | Arm Ltd. | Method, system and device for non-volatile memory device operation |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5974664A (ja) * | 1982-10-22 | 1984-04-27 | Hitachi Ltd | バイポ−ラ型ram |
JPS6028098A (ja) * | 1983-07-25 | 1985-02-13 | Hitachi Ltd | メモリ読出し回路 |
JPS62285297A (ja) * | 1986-06-02 | 1987-12-11 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPH0330193A (ja) * | 1989-06-28 | 1991-02-08 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
JPH03116492A (ja) * | 1989-03-30 | 1991-05-17 | Synergy Semiconductor Corp | ビット線放電および感知回路 |
JPH03241594A (ja) * | 1990-02-19 | 1991-10-28 | Fujitsu Ltd | 半導体メモリのセンス回路 |
JPH04259991A (ja) * | 1991-02-15 | 1992-09-16 | Nec Ic Microcomput Syst Ltd | 電流センスアンプ回路 |
US5200924A (en) * | 1989-03-30 | 1993-04-06 | Synergy Semiconductor Corporation | Bit line discharge and sense circuit |
JPH0628881A (ja) * | 1992-07-13 | 1994-02-04 | Nec Corp | センスアンプ回路 |
JPH08138387A (ja) * | 1994-11-01 | 1996-05-31 | United Microelectron Corp | 非揮発性半導体メモリー用センス増幅器 |
JPH1125685A (ja) * | 1997-07-03 | 1999-01-29 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPH11265594A (ja) * | 1998-03-17 | 1999-09-28 | Sanyo Electric Co Ltd | センスアンプ |
JP2001176280A (ja) * | 1999-12-20 | 2001-06-29 | Mitsubishi Electric Corp | 半導体メモリ装置および特性変更方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0727718B2 (ja) | 1988-02-19 | 1995-03-29 | 日本電気株式会社 | センス回路 |
US5056063A (en) * | 1990-05-29 | 1991-10-08 | Texas Instruments Incorporated | Active sense amplifier with dynamic pre-charge transistor |
FR2667193B1 (fr) * | 1990-09-25 | 1993-07-02 | Sgs Thomson Microelectronics | Circuit de precharge pour la lecture de memoires. |
US5912853A (en) * | 1996-12-03 | 1999-06-15 | Cirrus Logic, Inc. | Precision sense amplifiers and memories, systems and methods using the same |
KR100331549B1 (ko) * | 1999-08-06 | 2002-04-06 | 윤종용 | 더미 비트 라인을 이용한 전류 센스 앰프 회로 |
JP3611497B2 (ja) * | 2000-03-02 | 2005-01-19 | 松下電器産業株式会社 | 電流センスアンプ |
DE10038383C1 (de) | 2000-08-07 | 2002-03-14 | Infineon Technologies Ag | Hochgeschwindigkeits-Lese-Stromverstärker |
US7038936B2 (en) | 2002-02-06 | 2006-05-02 | Evert Seevinck | Reading circuit for reading a memory cell |
US6600690B1 (en) * | 2002-06-28 | 2003-07-29 | Motorola, Inc. | Sense amplifier for a memory having at least two distinct resistance states |
-
2007
- 2007-04-19 JP JP2009507217A patent/JP2009534782A/ja active Pending
- 2007-04-19 CN CN2007800144792A patent/CN101427320B/zh active Active
- 2007-04-19 US US12/297,287 patent/US7936618B2/en active Active
- 2007-04-19 WO PCT/IB2007/051414 patent/WO2007122564A2/en active Application Filing
- 2007-04-19 EP EP07735550A patent/EP2013882B1/en active Active
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5974664A (ja) * | 1982-10-22 | 1984-04-27 | Hitachi Ltd | バイポ−ラ型ram |
JPS6028098A (ja) * | 1983-07-25 | 1985-02-13 | Hitachi Ltd | メモリ読出し回路 |
JPS62285297A (ja) * | 1986-06-02 | 1987-12-11 | Mitsubishi Electric Corp | 半導体記憶装置 |
US5200924A (en) * | 1989-03-30 | 1993-04-06 | Synergy Semiconductor Corporation | Bit line discharge and sense circuit |
JPH03116492A (ja) * | 1989-03-30 | 1991-05-17 | Synergy Semiconductor Corp | ビット線放電および感知回路 |
JPH0330193A (ja) * | 1989-06-28 | 1991-02-08 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
JPH03241594A (ja) * | 1990-02-19 | 1991-10-28 | Fujitsu Ltd | 半導体メモリのセンス回路 |
JPH04259991A (ja) * | 1991-02-15 | 1992-09-16 | Nec Ic Microcomput Syst Ltd | 電流センスアンプ回路 |
JPH0628881A (ja) * | 1992-07-13 | 1994-02-04 | Nec Corp | センスアンプ回路 |
JPH08138387A (ja) * | 1994-11-01 | 1996-05-31 | United Microelectron Corp | 非揮発性半導体メモリー用センス増幅器 |
JPH1125685A (ja) * | 1997-07-03 | 1999-01-29 | Mitsubishi Electric Corp | 半導体記憶装置 |
JPH11265594A (ja) * | 1998-03-17 | 1999-09-28 | Sanyo Electric Co Ltd | センスアンプ |
JP2001176280A (ja) * | 1999-12-20 | 2001-06-29 | Mitsubishi Electric Corp | 半導体メモリ装置および特性変更方法 |
Also Published As
Publication number | Publication date |
---|---|
US20090279370A1 (en) | 2009-11-12 |
WO2007122564A3 (en) | 2008-01-10 |
EP2013882A2 (en) | 2009-01-14 |
WO2007122564A2 (en) | 2007-11-01 |
CN101427320A (zh) | 2009-05-06 |
US7936618B2 (en) | 2011-05-03 |
CN101427320B (zh) | 2011-10-05 |
EP2013882B1 (en) | 2012-10-17 |
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