JP2009532915A5 - - Google Patents

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JP2009532915A5
JP2009532915A5 JP2009504392A JP2009504392A JP2009532915A5 JP 2009532915 A5 JP2009532915 A5 JP 2009532915A5 JP 2009504392 A JP2009504392 A JP 2009504392A JP 2009504392 A JP2009504392 A JP 2009504392A JP 2009532915 A5 JP2009532915 A5 JP 2009532915A5
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annealing
gas
oxygen
torr
annealing step
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JP2009504392A
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Japanese (ja)
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JP5105627B2 (ja
JP2009532915A (ja
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Priority claimed from US11/397,010 external-priority patent/US7429540B2/en
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JP2009504392A 2006-04-03 2007-03-30 複数のアニールステップを用いた酸窒化シリコンゲート誘電体の形成 Active JP5105627B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/397,010 US7429540B2 (en) 2003-03-07 2006-04-03 Silicon oxynitride gate dielectric formation using multiple annealing steps
US11/397,010 2006-04-03
PCT/US2007/065650 WO2007118031A2 (en) 2006-04-03 2007-03-30 Silicon oxynitride gate dielectric formation using multiple annealing steps

Publications (3)

Publication Number Publication Date
JP2009532915A JP2009532915A (ja) 2009-09-10
JP2009532915A5 true JP2009532915A5 (https=) 2012-10-11
JP5105627B2 JP5105627B2 (ja) 2012-12-26

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JP2009504392A Active JP5105627B2 (ja) 2006-04-03 2007-03-30 複数のアニールステップを用いた酸窒化シリコンゲート誘電体の形成

Country Status (6)

Country Link
US (1) US7429540B2 (https=)
JP (1) JP5105627B2 (https=)
KR (1) KR101014938B1 (https=)
CN (1) CN101416286B (https=)
TW (1) TWI375276B (https=)
WO (1) WO2007118031A2 (https=)

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