JP2009529236A - 薄膜型太陽電池及びその製造方法 - Google Patents
薄膜型太陽電池及びその製造方法 Download PDFInfo
- Publication number
- JP2009529236A JP2009529236A JP2008558215A JP2008558215A JP2009529236A JP 2009529236 A JP2009529236 A JP 2009529236A JP 2008558215 A JP2008558215 A JP 2008558215A JP 2008558215 A JP2008558215 A JP 2008558215A JP 2009529236 A JP2009529236 A JP 2009529236A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- layer
- thin film
- transparent conductive
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 87
- 238000004519 manufacturing process Methods 0.000 title claims description 51
- 238000000034 method Methods 0.000 title claims description 46
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 55
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 45
- 238000010030 laminating Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 29
- 239000011521 glass Substances 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 238000005520 cutting process Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000011084 recovery Methods 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910020328 SiSn Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
【解決手段】ガラス基板200、透明導電層210,211,212、多重接続された太陽電池層220,230、及び電極層240の積層構造を有し、多重接続された第1太陽電池層220と第2太陽電池層230とが互いに電気的に並列接続され、この並列接続された単位セルが一つ以上集まって互いに電気的に直列接続されている。これにより、異なる特性を有する2つの太陽電池層が並列接続された構造の単位セルを有し、これらの単位セルの数個を直列に接続する構造を有する薄膜型太陽電池は、数個の太陽電池層を直列に接続する構造を有する薄膜型太陽電池に比べて高い出力と光電変換効率を達成することができる。
【選択図】図3
Description
上記従来技術の一実施形態において、特性及び結晶構造の異なる第1の太陽電池層120と、第2の太陽電池層130とが順次積層されている。そして、これらの2つの太陽電池層は、第2の太陽電池層の上に積層された透明導電層111を隣接するセルの第1の太陽電池層の下に積層されている透明導電層110と接続することによって、電気的に直列に接続されている。
210…下部透明導電層(第1の透明導電層)
211…中間透明導電層(第2の透明導電層)
212…上部透明導電層(第3の透明導電層)
220…第1の太陽電池層
221…p型非晶質シリコン層
222…i型非晶質シリコン層
223…n型非晶質シリコン層
230…第2の太陽電池層
231…p型微結晶シリコン層
232…i型微結晶シリコン層
233…n型微結晶シリコン層
240…後面電極層
250…透明絶縁層
Claims (20)
- 多重接合構造からなる第1の太陽電池層と、第2の太陽電池層とが互いに電気的に並列に接続された単位セルを含んで構成されたことを特徴とする薄膜型太陽電池。
- 前記単位セルは、少なくとも1つ含まれ、前記各単位セルは直列に連結されていることを特徴とする請求項1に記載の薄膜型太陽電池。
- 前記第1の太陽電池層及び第2の太陽電池層は、非晶質シリコン太陽電池層又は微結晶シリコン太陽電池層からそれぞれ個別に選択される一つの太陽電池層であることを特徴とする請求項1または2に記載の薄膜型太陽電池。
- 前記非晶質シリコン太陽電池層は、非晶質シリコンp層、非晶質シリコンi層、非晶質シリコンn層が順次積層されていることを特徴とする請求項3に記載の薄膜型太陽電池。
- 前記微結晶シリコン太陽電池層は、微結晶シリコンp層、微結晶シリコンi層、微結晶シリコンn層が順次積層されていることを特徴とする請求項3に記載の薄膜型太陽電池。
- 前記第1の太陽電池層と前記第2の太陽電池層とは、共通電極を使用することを特徴とする請求項1又は2に記載の薄膜型太陽電池。
- 前記各単位セルの隣接部分には、電気的に絶縁させる透明絶縁層をさらに含んで構成されたことを特徴とする請求項2に記載の薄膜型太陽電池。
- 基板上に形成された第1の透明導電層と、
前記第1の透明導電層上に形成された第1の太陽電池と、
前記第1の太陽電池上に形成された第2の透明導電層と、
前記第2の透明導電層上に形成された第2の太陽電池と、
前記第2の太陽電池上に形成された上部電極層と、
を含んで構成された少なくとも1つの繰り返し単位を備えたことを特徴とする薄膜型太陽電池。 - 前記第1の太陽電池は、非晶質シリコン又は微結晶シリコンであることを特徴とする請求項8に記載の薄膜型太陽電池。
- 前記第2の太陽電池は、非晶質シリコン又は微結晶シリコンであることを特徴とする請求項8に記載の薄膜型太陽電池。
- p型、i型及びn型の非晶質シリコン又はp型、i型及びn型の微結晶シリコンが順次積層されたことを特徴とする請求項9又は10に記載の薄膜型太陽電池。
- 基板上に形成された第1の透明導電層と、
前記第1の透明導電層上に形成された第1の太陽電池と、
前記第1の太陽電池上に形成された第2の透明導電層と、
前記第2の透明導電層上に形成された第2の太陽電池と、
前記第2の太陽電池上に形成された上部電極層と、
を含んで構成された繰り返し単位を備え、
前記繰り返し単位は、互に直列に接続されていることを特徴とする薄膜型太陽電池。 - 前記上部電極層は、第3の透明導電層を含んで構成されたことを特徴とする請求項1に記載の薄膜型太陽電池。
- 前記繰り返し単位は、前記第1の透明導電層と、前記第2の透明導電層と、前記第3の透明導電層とによって互に直列に接続されていることを特徴とする請求項13に記載の薄膜型太陽電池。
- 基板上に形成された複数の単位セルを透明導電層を介して直列に接続する段階を含んで構成された薄膜型太陽電池の製造方法であって、
前記各単位セルは、
第1の太陽電池層と第2の太陽電池層とを互に並列に接続する段階と、
前記第2の太陽電池層上に後面電極層を形成する段階と、
前記第2の太陽電池層を互に電気的に絶縁する段階と、
を含むことを特徴とする薄膜型太陽電池の製造方法。 - 並列に接続して前記単位セルを形成する段階は、
基板上に形成された第1の太陽電池層の下層と、前記第1の太陽電池層から分離して形成された他の第1の太陽電池層の上層とを電気的に接続する透明導電層を形成する段階と、
前記第1の太陽電池層及び透明導電層上に分離独立して複数の第2の太陽電池層を形成する段階と、
を含んで構成されたことを特徴とする請求項15に記載の薄膜型太陽電池の製造方法。 - 前記第1の太陽電池層及び第2の太陽電池層は、非晶質シリコン又は微結晶シリコン太陽電池層から個別に選択された1つの太陽電池層であることを特徴とする請求項15に記載の薄膜型太陽電池の製造方法。
- 前記非晶質シリコン太陽電池層は、非晶質シリコンp層、非晶質シリコンi層、非晶質シリコンn層が順次積層されていることを特徴とする請求項15に記載の薄膜型太陽電池の製造方法。
- 前記微結晶シリコン太陽電池層は、微結晶シリコンp層、微結晶シリコンi層、微結晶シリコンn層が順次積層されていることを特徴とする請求項15に記載の薄膜型太陽電池の製造方法。
- 前記第1の太陽電池層及び前記第2の太陽電池層は、共通電極を使用することを特徴とする請求項15に記載の薄膜型太陽電池の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060033344A KR20070101917A (ko) | 2006-04-12 | 2006-04-12 | 박막형 태양전지와 그의 제조방법 |
PCT/KR2007/001750 WO2007117118A1 (en) | 2006-04-12 | 2007-04-11 | Thin-film solar cell and fabrication method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009529236A true JP2009529236A (ja) | 2009-08-13 |
Family
ID=38581349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008558215A Pending JP2009529236A (ja) | 2006-04-12 | 2007-04-11 | 薄膜型太陽電池及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20090242018A1 (ja) |
EP (1) | EP2005484A4 (ja) |
JP (1) | JP2009529236A (ja) |
KR (1) | KR20070101917A (ja) |
CN (1) | CN101366125B (ja) |
WO (1) | WO2007117118A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014050645A1 (ja) * | 2012-09-25 | 2014-04-03 | シャープ株式会社 | 太陽電池モジュールおよび太陽光発電装置 |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007062620A1 (de) * | 2007-12-22 | 2009-07-09 | Schott Solar Gmbh | Verfahren und Vorrichtung zur Herstellung eines semitransparenten photovoltaischen Moduls |
EP2075850A3 (en) * | 2007-12-28 | 2011-08-24 | Semiconductor Energy Laboratory Co, Ltd. | Photoelectric conversion device and manufacturing method thereof |
US20090211622A1 (en) * | 2008-02-21 | 2009-08-27 | Sunlight Photonics Inc. | Multi-layered electro-optic devices |
KR100972780B1 (ko) * | 2008-02-28 | 2010-07-29 | 주식회사 티지솔라 | 태양전지 및 그 제조방법 |
US20100175749A1 (en) * | 2008-03-24 | 2010-07-15 | Tsutsumi Eishi | Solar cell and method for manufacturing metal electrode layer to be used in the solar cell |
KR101006747B1 (ko) * | 2008-07-24 | 2011-01-10 | (주)미래컴퍼니 | 솔라셀 패널 제조장치 및 제조방법 |
KR20100021045A (ko) * | 2008-08-14 | 2010-02-24 | 주성엔지니어링(주) | 박막형 태양전지 및 그 제조방법 |
CN105513670A (zh) * | 2008-08-27 | 2016-04-20 | 三菱综合材料株式会社 | 太阳能电池用透明导电膜及其透明导电膜用组合物、多接合型太阳能电池 |
US8299472B2 (en) | 2009-12-08 | 2012-10-30 | Young-June Yu | Active pixel sensor with nanowire structured photodetectors |
US9000353B2 (en) | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
US20150075599A1 (en) * | 2013-09-19 | 2015-03-19 | Zena Technologies, Inc. | Pillar structured multijunction photovoltaic devices |
US8229255B2 (en) | 2008-09-04 | 2012-07-24 | Zena Technologies, Inc. | Optical waveguides in image sensors |
US8748799B2 (en) | 2010-12-14 | 2014-06-10 | Zena Technologies, Inc. | Full color single pixel including doublet or quadruplet si nanowires for image sensors |
US9299866B2 (en) | 2010-12-30 | 2016-03-29 | Zena Technologies, Inc. | Nanowire array based solar energy harvesting device |
US9515218B2 (en) | 2008-09-04 | 2016-12-06 | Zena Technologies, Inc. | Vertical pillar structured photovoltaic devices with mirrors and optical claddings |
US9478685B2 (en) | 2014-06-23 | 2016-10-25 | Zena Technologies, Inc. | Vertical pillar structured infrared detector and fabrication method for the same |
US8835831B2 (en) | 2010-06-22 | 2014-09-16 | Zena Technologies, Inc. | Polarized light detecting device and fabrication methods of the same |
US8735797B2 (en) | 2009-12-08 | 2014-05-27 | Zena Technologies, Inc. | Nanowire photo-detector grown on a back-side illuminated image sensor |
US9082673B2 (en) | 2009-10-05 | 2015-07-14 | Zena Technologies, Inc. | Passivated upstanding nanostructures and methods of making the same |
US8274039B2 (en) | 2008-11-13 | 2012-09-25 | Zena Technologies, Inc. | Vertical waveguides with various functionality on integrated circuits |
US9343490B2 (en) | 2013-08-09 | 2016-05-17 | Zena Technologies, Inc. | Nanowire structured color filter arrays and fabrication method of the same |
US8866065B2 (en) | 2010-12-13 | 2014-10-21 | Zena Technologies, Inc. | Nanowire arrays comprising fluorescent nanowires |
US8546742B2 (en) | 2009-06-04 | 2013-10-01 | Zena Technologies, Inc. | Array of nanowires in a single cavity with anti-reflective coating on substrate |
US9406709B2 (en) | 2010-06-22 | 2016-08-02 | President And Fellows Of Harvard College | Methods for fabricating and using nanowires |
JP5379845B2 (ja) * | 2009-03-02 | 2013-12-25 | 株式会社カネカ | 薄膜太陽電池モジュール |
JP2010282998A (ja) * | 2009-06-02 | 2010-12-16 | Seiko Epson Corp | 太陽電池、太陽電池の製造方法 |
CN102301491A (zh) * | 2009-06-10 | 2011-12-28 | 薄膜硅公司 | 光生伏打模块和制造具有多个半导体层堆叠的光生伏打模块的方法 |
DE102009027852A1 (de) * | 2009-07-20 | 2011-01-27 | Q-Cells Se | Dünnschicht-Solarmodul mit verbesserter Zusammenschaltung von Solarzellen sowie Verfahren zu dessen Herstellung |
WO2011035306A2 (en) * | 2009-09-21 | 2011-03-24 | Nanogram Corporation | Silicon inks for thin film solar solar cell formation, corresponding methods and solar cell structures |
KR101026362B1 (ko) * | 2009-09-25 | 2011-04-05 | 한국과학기술원 | 실리콘 태양전지 |
US8101437B2 (en) * | 2009-12-31 | 2012-01-24 | Du Pont Apollo Limited | Method of forming three-terminal solar cell array |
CN102117815B (zh) * | 2010-01-06 | 2012-12-26 | 京东方科技集团股份有限公司 | 太阳能电池组件及其制备方法 |
CN101800257A (zh) * | 2010-02-26 | 2010-08-11 | 镇江绿洲光伏科技有限公司 | 双结并联的多结薄膜太阳能光伏器件 |
EP2375455B1 (en) | 2010-04-09 | 2019-01-09 | Saint-Augustin Canada Electric Inc. | Voltage matched multijunction solar cell |
US8563351B2 (en) * | 2010-06-25 | 2013-10-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for manufacturing photovoltaic device |
KR101117127B1 (ko) * | 2010-08-06 | 2012-02-24 | 한국과학기술연구원 | 비정질 실리콘 태양전지와 유기 태양전지를 이용한 탠덤형 태양전지 |
JP2013058562A (ja) | 2011-09-07 | 2013-03-28 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
CN103000739B (zh) * | 2011-09-16 | 2016-01-06 | 深圳光启高等理工研究院 | 一种电子设备及其电路的电源装置 |
JP6261844B2 (ja) * | 2012-02-20 | 2018-01-17 | 株式会社ディスコ | レーザー加工方法およびレーザー加工装置 |
CN103378106A (zh) * | 2012-04-28 | 2013-10-30 | 杜邦太阳能有限公司 | 太阳能电池及其制造方法 |
CN103390622A (zh) * | 2012-05-11 | 2013-11-13 | 冠晶光电股份有限公司 | 层叠型太阳能电池结构 |
WO2014165225A1 (en) * | 2013-03-12 | 2014-10-09 | New Jersey Institute Of Technology | System and method for thin film photovoltaic modules and back contact for thin film solar cells |
JP6366914B2 (ja) | 2013-09-24 | 2018-08-01 | 株式会社東芝 | 多接合型太陽電池 |
KR101535281B1 (ko) * | 2014-07-25 | 2015-07-09 | 한국철도기술연구원 | 태양전지 제조 방법 |
CN104538477A (zh) * | 2014-12-15 | 2015-04-22 | 浙江正泰太阳能科技有限公司 | 一种硅基薄膜叠层太阳能电池及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62221167A (ja) * | 1986-03-24 | 1987-09-29 | Seiji Wakamatsu | 多層型薄膜太陽電池 |
JPS63122283A (ja) * | 1986-11-12 | 1988-05-26 | Nippon Denso Co Ltd | アモルフアス太陽電池 |
JP2003298090A (ja) * | 2002-04-03 | 2003-10-17 | Sharp Corp | 太陽電池素子およびその製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4292092A (en) * | 1980-06-02 | 1981-09-29 | Rca Corporation | Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery |
DE3727826A1 (de) * | 1987-08-20 | 1989-03-02 | Siemens Ag | Serienverschaltetes duennschicht-solarmodul aus kristallinem silizium |
US4948436A (en) * | 1988-02-05 | 1990-08-14 | Siemens Aktiengesellschaft | Thin-film solar cell arrangement |
EP0625286A1 (de) * | 1992-02-04 | 1994-11-23 | Siemens Aktiengesellschaft | Integriert verschaltetes stapelzellensolarmodul |
US5266125A (en) * | 1992-05-12 | 1993-11-30 | Astropower, Inc. | Interconnected silicon film solar cell array |
US6077722A (en) * | 1998-07-14 | 2000-06-20 | Bp Solarex | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts |
AU2004204637B8 (en) * | 2003-01-10 | 2009-05-21 | Kaneka Corporation | Transparent thin-film solar cell module and its manufacturing method |
US20050150542A1 (en) * | 2004-01-13 | 2005-07-14 | Arun Madan | Stable Three-Terminal and Four-Terminal Solar Cells and Solar Cell Panels Using Thin-Film Silicon Technology |
-
2006
- 2006-04-12 KR KR1020060033344A patent/KR20070101917A/ko not_active Application Discontinuation
-
2007
- 2007-04-11 JP JP2008558215A patent/JP2009529236A/ja active Pending
- 2007-04-11 EP EP07745913A patent/EP2005484A4/en not_active Withdrawn
- 2007-04-11 US US12/158,028 patent/US20090242018A1/en not_active Abandoned
- 2007-04-11 WO PCT/KR2007/001750 patent/WO2007117118A1/en active Application Filing
- 2007-04-11 CN CN2007800018677A patent/CN101366125B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62221167A (ja) * | 1986-03-24 | 1987-09-29 | Seiji Wakamatsu | 多層型薄膜太陽電池 |
JPS63122283A (ja) * | 1986-11-12 | 1988-05-26 | Nippon Denso Co Ltd | アモルフアス太陽電池 |
JP2003298090A (ja) * | 2002-04-03 | 2003-10-17 | Sharp Corp | 太陽電池素子およびその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014050645A1 (ja) * | 2012-09-25 | 2014-04-03 | シャープ株式会社 | 太陽電池モジュールおよび太陽光発電装置 |
JPWO2014050645A1 (ja) * | 2012-09-25 | 2016-08-22 | シャープ株式会社 | 太陽電池モジュールおよび太陽光発電装置 |
Also Published As
Publication number | Publication date |
---|---|
EP2005484A1 (en) | 2008-12-24 |
US20090242018A1 (en) | 2009-10-01 |
CN101366125B (zh) | 2010-06-02 |
WO2007117118A1 (en) | 2007-10-18 |
KR20070101917A (ko) | 2007-10-18 |
CN101366125A (zh) | 2009-02-11 |
EP2005484A4 (en) | 2012-10-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2009529236A (ja) | 薄膜型太陽電池及びその製造方法 | |
US7863515B2 (en) | Thin-film solar cell and method of manufacturing the same | |
EP3170209B1 (en) | Solar cell with interdigitated back contact | |
JP3754841B2 (ja) | 光起電力素子およびその製造方法 | |
JP5171490B2 (ja) | 集積型薄膜太陽電池 | |
US9960302B1 (en) | Cascaded photovoltaic structures with interdigitated back contacts | |
KR101144808B1 (ko) | 박막형 태양전지 제조방법 및 이를 이용한 박막형 태양전지 | |
US20090014063A1 (en) | Method for production of a single-sided contact solar cell and single-sided contact solar cell | |
KR20110029585A (ko) | 박막형 태양전지 및 그 제조방법, 및 그를 이용한 박막형 태양전지 모듈 및 태양광 발전 시스템 | |
EP2214208A2 (en) | Solar cell module and method for manufacturing the same | |
JP5376873B2 (ja) | 集積型薄膜太陽電池 | |
KR20110080663A (ko) | 태양광 발전장치 | |
US20110120534A1 (en) | Thin film solar cell and manufacturing method thereof | |
JP2002076397A (ja) | 光起電力素子の製造方法 | |
KR101322628B1 (ko) | 태양전지의 후면반사막 형성방법, 이를 포함하는후면전극부 형성방법 및 태양전지의 제조방법 | |
KR101424716B1 (ko) | 고효율 단결정 실리콘 박막 태양전지 모듈 및 이의 제조 방법 | |
JP2630657B2 (ja) | 集積型多層アモルファス太陽電池の製造方法 | |
CN115020519B (zh) | 一种太阳能叠层电池、电池组件和光伏系统 | |
Hagar et al. | A new approach for Multi junction solar cells from off the shelf individual cells: GaAs/Si | |
AU2015230723B2 (en) | Photovoltaic component for use under concentrated solar flux | |
KR101130965B1 (ko) | 태양전지 및 그 제조방법 | |
JPH11177109A (ja) | 太陽電池 | |
JP2000068534A (ja) | 光起電力素子およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110420 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110426 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110713 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110721 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20111227 |