JP2009522781A - ボトムゲート型薄膜トランジスタ - Google Patents

ボトムゲート型薄膜トランジスタ Download PDF

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Publication number
JP2009522781A
JP2009522781A JP2008548628A JP2008548628A JP2009522781A JP 2009522781 A JP2009522781 A JP 2009522781A JP 2008548628 A JP2008548628 A JP 2008548628A JP 2008548628 A JP2008548628 A JP 2008548628A JP 2009522781 A JP2009522781 A JP 2009522781A
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JP
Japan
Prior art keywords
polymer
group
transistor
independently
unbranched
Prior art date
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Pending
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JP2008548628A
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English (en)
Japanese (ja)
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JP2009522781A5 (enExample
Inventor
イー． ボーゲル，デニス
ケー． ネルソン，ブライアン
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3M Innovative Properties Co
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3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of JP2009522781A publication Critical patent/JP2009522781A/ja
Publication of JP2009522781A5 publication Critical patent/JP2009522781A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Film Transistor (AREA)
JP2008548628A 2005-12-28 2006-12-21 ボトムゲート型薄膜トランジスタ Pending JP2009522781A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/275,367 US7514710B2 (en) 2005-12-28 2005-12-28 Bottom gate thin film transistors
PCT/US2006/048804 WO2007078993A1 (en) 2005-12-28 2006-12-21 Bottom gate thin film transistors

Publications (2)

Publication Number Publication Date
JP2009522781A true JP2009522781A (ja) 2009-06-11
JP2009522781A5 JP2009522781A5 (enExample) 2010-02-12

Family

ID=38228545

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008548628A Pending JP2009522781A (ja) 2005-12-28 2006-12-21 ボトムゲート型薄膜トランジスタ

Country Status (5)

Country Link
US (1) US7514710B2 (enExample)
EP (1) EP1969621A4 (enExample)
JP (1) JP2009522781A (enExample)
CN (1) CN101346808B (enExample)
WO (1) WO2007078993A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140035434A (ko) * 2011-05-26 2014-03-21 센트리 포 프로세스 이노베이션 리미티드 트랜지스터 및 이의 제조 방법
JP2014159405A (ja) * 2013-12-27 2014-09-04 Japan Science & Technology Agency ペンタセンキノン誘導体及びその製造方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITMI20051901A1 (it) * 2005-10-10 2007-04-11 St Microelectronics Srl Processo di fabbricazione di tramsistori a film sottile in materiale organico e transistore
US20070146426A1 (en) * 2005-12-28 2007-06-28 Nelson Brian K All-inkjet printed thin film transistor
KR100976572B1 (ko) * 2008-02-26 2010-08-17 고려대학교 산학협력단 유기 박막 트랜지스터의 제조방법
JP5406284B2 (ja) 2008-06-11 2014-02-05 スリーエム イノベイティブ プロパティズ カンパニー 有機半導体の堆積のための混合溶媒系
US7948016B1 (en) * 2009-11-03 2011-05-24 3M Innovative Properties Company Off-center deposition of organic semiconductor in an organic semiconductor device
US8450779B2 (en) * 2010-03-08 2013-05-28 International Business Machines Corporation Graphene based three-dimensional integrated circuit device
GB201108865D0 (en) 2011-05-26 2011-07-06 Ct For Process Innovation The Ltd Semiconductor compounds
GB2491810B (en) 2011-05-31 2018-03-21 Smartkem Ltd Organic semiconductor compositions
GB201203159D0 (en) * 2012-02-23 2012-04-11 Smartkem Ltd Organic semiconductor compositions
FR3002366A1 (fr) * 2013-02-20 2014-08-22 Commissariat Energie Atomique Dispositif electronique comprenant une couche en un materiau semi-conducteur et son procede de fabrication
CN103151461A (zh) * 2013-02-27 2013-06-12 京东方科技集团股份有限公司 一种有机薄膜晶体管及其制备方法和制备装置
CN103255480B (zh) * 2013-04-27 2015-12-02 中国科学院合肥物质科学研究院 大尺寸6,13-双(三异丙基甲硅烷基乙炔基)并五苯薄晶体的制备方法
CN105493303B (zh) * 2013-08-28 2019-02-22 斯马特凯姆有限公司 聚合物有机半导体组合物
GB2542563A (en) * 2015-09-22 2017-03-29 Cambridge Display Tech Ltd Pentacene derivatives with C-alkyne solubilising units and their applications as small molecule organic semiconductors
US11258017B2 (en) 2016-04-27 2022-02-22 Wuhan Xinqu Chuangrou Optoelectronics Technology Co., Ltd Semiconducting compositions comprising semiconducting polymers
CN111416039A (zh) 2019-01-07 2020-07-14 纽多维有限公司 制剂和层

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040222412A1 (en) * 2003-05-08 2004-11-11 3M Innovative Properties Company Organic polymers, electronic devices, and methods
WO2005055248A2 (en) * 2003-11-28 2005-06-16 Merck Patent Gmbh Organic semiconducting layer formulations comprising polyacenes and organic binder polymers

Family Cites Families (12)

* Cited by examiner, † Cited by third party
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US6326640B1 (en) * 1996-01-29 2001-12-04 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
DE69840914D1 (de) 1997-10-14 2009-07-30 Patterning Technologies Ltd Methode zur Herstellung eines elektrischen Kondensators
KR100552866B1 (ko) * 2001-08-09 2006-02-20 아사히 가세이 가부시키가이샤 유기 반도체 소자
US6690029B1 (en) 2001-08-24 2004-02-10 University Of Kentucky Research Foundation Substituted pentacenes and electronic devices made with substituted pentacenes
JP2005505142A (ja) 2001-10-01 2005-02-17 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 電子デバイス及び構成並びに方法
US6963080B2 (en) 2001-11-26 2005-11-08 International Business Machines Corporation Thin film transistors using solution processed pentacene precursor as organic semiconductor
EP2204861A1 (en) * 2001-12-19 2010-07-07 Merck Patent GmbH Organic field effect transistor with an organic dielectric
EP1434282A3 (en) * 2002-12-26 2007-06-27 Konica Minolta Holdings, Inc. Protective layer for an organic thin-film transistor
US6861664B2 (en) * 2003-07-25 2005-03-01 Xerox Corporation Device with n-type semiconductor
US7700366B2 (en) * 2003-12-04 2010-04-20 Massachusetts Institute Of Technology Fluorescent, semi-conductive polymers, and devices comprising them
US7655809B2 (en) * 2004-05-18 2010-02-02 University Of Ottawa Compounds comprising a linear series of five fused carbon rings, and preparation thereof
US7319153B2 (en) * 2005-07-29 2008-01-15 3M Innovative Properties Company 6,13-Bis(thienyl)pentacene compounds

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040222412A1 (en) * 2003-05-08 2004-11-11 3M Innovative Properties Company Organic polymers, electronic devices, and methods
JP2007538381A (ja) * 2003-05-08 2007-12-27 スリーエム イノベイティブ プロパティズ カンパニー 有機高分子、電子デバイス、および方法
WO2005055248A2 (en) * 2003-11-28 2005-06-16 Merck Patent Gmbh Organic semiconducting layer formulations comprising polyacenes and organic binder polymers
JP2007519227A (ja) * 2003-11-28 2007-07-12 メルク　パテント　ゲゼルシャフト　ミット　ベシュレンクテル　ハフトング 有機半導体層およびその改善

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140035434A (ko) * 2011-05-26 2014-03-21 센트리 포 프로세스 이노베이션 리미티드 트랜지스터 및 이의 제조 방법
JP2014516210A (ja) * 2011-05-26 2014-07-07 センター フォー プロセス イノベーション リミテッド トランジスタ及びその形成方法
KR101987209B1 (ko) * 2011-05-26 2019-06-10 뉴드라이브 리미티드 트랜지스터 및 이의 제조 방법
JP2014159405A (ja) * 2013-12-27 2014-09-04 Japan Science & Technology Agency ペンタセンキノン誘導体及びその製造方法

Also Published As

Publication number Publication date
US7514710B2 (en) 2009-04-07
EP1969621A4 (en) 2011-08-24
CN101346808A (zh) 2009-01-14
WO2007078993A1 (en) 2007-07-12
CN101346808B (zh) 2010-05-26
EP1969621A1 (en) 2008-09-17
US20070158643A1 (en) 2007-07-12

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