JP2009521332A - ナノギャップおよびナノギャップセンサの製造方法 - Google Patents
ナノギャップおよびナノギャップセンサの製造方法 Download PDFInfo
- Publication number
- JP2009521332A JP2009521332A JP2008536478A JP2008536478A JP2009521332A JP 2009521332 A JP2009521332 A JP 2009521332A JP 2008536478 A JP2008536478 A JP 2008536478A JP 2008536478 A JP2008536478 A JP 2008536478A JP 2009521332 A JP2009521332 A JP 2009521332A
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- Prior art keywords
- nanogap
- substrate
- etching
- sensor
- mask material
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- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
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- 125000000151 cysteine group Chemical group N[C@@H](CS)C(=O)* 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000000992 sputter etching Methods 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 102000004190 Enzymes Human genes 0.000 claims 2
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- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 45
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- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
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- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- -1 ITO Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
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- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
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Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
- G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
- G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
- G01N33/543—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals
- G01N33/54366—Apparatus specially adapted for solid-phase testing
- G01N33/54373—Apparatus specially adapted for solid-phase testing involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings
- G01N33/5438—Electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
- G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
- G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
- G01N33/574—Immunoassay; Biospecific binding assay; Materials therefor for cancer
- G01N33/57407—Specifically defined cancers
- G01N33/57434—Specifically defined cancers of prostate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
Landscapes
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Molecular Biology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Hematology (AREA)
- Biomedical Technology (AREA)
- Urology & Nephrology (AREA)
- General Health & Medical Sciences (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Food Science & Technology (AREA)
- Microbiology (AREA)
- Medicinal Chemistry (AREA)
- Cell Biology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Biotechnology (AREA)
- Pathology (AREA)
- Oncology (AREA)
- Hospice & Palliative Care (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Micromachines (AREA)
- Weting (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20050099585 | 2005-10-21 | ||
| KR1020060072981A KR100849384B1 (ko) | 2005-10-21 | 2006-08-02 | 나노갭 및 나노갭 센서의 제조방법 |
| PCT/KR2006/003517 WO2007046582A1 (en) | 2005-10-21 | 2006-09-05 | A method for fabricating nanogap and nanogap sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009521332A true JP2009521332A (ja) | 2009-06-04 |
| JP2009521332A5 JP2009521332A5 (enExample) | 2009-07-23 |
Family
ID=38178037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008536478A Pending JP2009521332A (ja) | 2005-10-21 | 2006-09-05 | ナノギャップおよびナノギャップセンサの製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8557567B2 (enExample) |
| JP (1) | JP2009521332A (enExample) |
| KR (1) | KR100849384B1 (enExample) |
| CN (1) | CN101156228B (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011081245A1 (ko) * | 2009-12-29 | 2011-07-07 | 연세대학교 산학협력단 | 수소 센서 및 그 제조방법 |
| JP2022500628A (ja) * | 2018-09-14 | 2022-01-04 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | ナノポアを形成する方法およびその結果生じる構造 |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101518733B1 (ko) | 2008-11-27 | 2015-05-11 | 삼성전자주식회사 | 노즐 플레이트 및 그 제조방법 |
| US20110020966A1 (en) * | 2009-07-23 | 2011-01-27 | Canon Kabushiki Kaisha | Method for processing silicon substrate and method for producing substrate for liquid ejecting head |
| US8468872B2 (en) * | 2009-12-29 | 2013-06-25 | Industry-Academic Cooperation Foundation, Yonsei University | Hydrogen sensor and method of manufacturing the same |
| KR101130084B1 (ko) * | 2010-04-28 | 2012-03-28 | 연세대학교 산학협력단 | 수소 센서 및 그 제조방법 |
| US9194838B2 (en) | 2010-03-03 | 2015-11-24 | Osaka University | Method and device for identifying nucleotide, and method and device for determining nucleotide sequence of polynucleotide |
| KR20110138657A (ko) * | 2010-06-21 | 2011-12-28 | (주)미코바이오메드 | 표면 플라즈몬 공명 센서 모듈 및 이를 포함한 센싱 시스템 |
| KR101694549B1 (ko) * | 2010-10-21 | 2017-01-09 | (주)미코바이오메드 | 나노 갭 패턴 형성 방법, 나노 갭 패턴을 갖는 바이오 센서 및 바이오 센서 제조 방법 |
| CA2882001A1 (en) | 2012-08-17 | 2014-02-20 | Osaka University | Sample analysis method |
| KR101878747B1 (ko) | 2012-11-05 | 2018-07-16 | 삼성전자주식회사 | 나노갭 소자 및 이로부터의 신호를 처리하는 방법 |
| KR101927415B1 (ko) | 2012-11-05 | 2019-03-07 | 삼성전자주식회사 | 나노갭 소자 및 이로부터의 신호를 처리하는 방법 |
| JP6282036B2 (ja) | 2012-12-27 | 2018-02-21 | クオンタムバイオシステムズ株式会社 | 物質の移動速度の制御方法および制御装置 |
| CA2929929A1 (en) | 2013-09-18 | 2015-03-26 | Quantum Biosystems Inc. | Biomolecule sequencing devices, systems and methods |
| JP2015077652A (ja) | 2013-10-16 | 2015-04-23 | クオンタムバイオシステムズ株式会社 | ナノギャップ電極およびその製造方法 |
| US10438811B1 (en) | 2014-04-15 | 2019-10-08 | Quantum Biosystems Inc. | Methods for forming nano-gap electrodes for use in nanosensors |
| US9343569B2 (en) | 2014-05-21 | 2016-05-17 | International Business Machines Corporation | Vertical compound semiconductor field effect transistor on a group IV semiconductor substrate |
| CN106796196A (zh) * | 2014-07-11 | 2017-05-31 | 牛津大学科技创新有限公司 | 用于在石墨烯中形成纳米间隙的方法 |
| DE102015211392B4 (de) * | 2015-06-19 | 2018-05-24 | Albert-Ludwigs-Universität Freiburg | Elektrodenstruktur und Verfahren zum Herstellen der Elektrodenstruktur und Biosensor-Chip die Elektrodenstruktur umfassend |
| US10247700B2 (en) | 2015-10-30 | 2019-04-02 | International Business Machines Corporation | Embedded noble metal electrodes in microfluidics |
| JP2019515317A (ja) | 2016-04-27 | 2019-06-06 | クオンタムバイオシステムズ株式会社 | バイオ分子の測定およびシーケンシングのためのシステムおよび方法 |
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| WO2019072743A1 (en) | 2017-10-13 | 2019-04-18 | Analog Devices Global Unlimited Company | DESIGN AND MANUFACTURE OF SENSORS IN NANOGAP |
| CA3135743A1 (en) | 2018-05-09 | 2019-11-14 | Arizona Board Of Regents On Behalf Of Arizona State University | Method for electronic detection and quantification of antibodies |
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| US20230104609A1 (en) * | 2021-10-04 | 2023-04-06 | Tintoria Piana, Inc | Diagnostic system and methods of using and manufacturing the same |
| KR20230060124A (ko) * | 2021-10-27 | 2023-05-04 | 현대자동차주식회사 | 수소 센서 및 수소 센서 제조방법 |
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| WO2011081245A1 (ko) * | 2009-12-29 | 2011-07-07 | 연세대학교 산학협력단 | 수소 센서 및 그 제조방법 |
| KR101067557B1 (ko) | 2009-12-29 | 2011-09-27 | 연세대학교 산학협력단 | 수소 센서 및 그 제조방법 |
| JP2022500628A (ja) * | 2018-09-14 | 2022-01-04 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | ナノポアを形成する方法およびその結果生じる構造 |
| JP7190558B2 (ja) | 2018-09-14 | 2022-12-15 | アプライド マテリアルズ インコーポレイテッド | ナノポアを形成する方法およびその結果生じる構造 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8557567B2 (en) | 2013-10-15 |
| KR100849384B1 (ko) | 2008-07-31 |
| US20090215156A1 (en) | 2009-08-27 |
| CN101156228A (zh) | 2008-04-02 |
| KR20070043591A (ko) | 2007-04-25 |
| CN101156228B (zh) | 2013-01-30 |
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