KR100849384B1 - 나노갭 및 나노갭 센서의 제조방법 - Google Patents

나노갭 및 나노갭 센서의 제조방법 Download PDF

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Publication number
KR100849384B1
KR100849384B1 KR1020060072981A KR20060072981A KR100849384B1 KR 100849384 B1 KR100849384 B1 KR 100849384B1 KR 1020060072981 A KR1020060072981 A KR 1020060072981A KR 20060072981 A KR20060072981 A KR 20060072981A KR 100849384 B1 KR100849384 B1 KR 100849384B1
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nanogap
sensor
substrate
nanogap sensor
mask material
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Expired - Fee Related
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English (en)
Korean (ko)
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KR20070043591A (ko
Inventor
정봉현
김상규
박혜정
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한국생명공학연구원
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Priority to PCT/KR2006/003517 priority Critical patent/WO2007046582A1/en
Priority to JP2008536478A priority patent/JP2009521332A/ja
Priority to US11/887,978 priority patent/US8557567B2/en
Priority to EP06783773A priority patent/EP1938364A4/en
Priority to CN200680011497.0A priority patent/CN101156228B/zh
Publication of KR20070043591A publication Critical patent/KR20070043591A/ko
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
    • G01N33/543—Immunoassay; Biospecific binding assay; Materials therefor with an insoluble carrier for immobilising immunochemicals
    • G01N33/54366—Apparatus specially adapted for solid-phase testing
    • G01N33/54373—Apparatus specially adapted for solid-phase testing involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings
    • G01N33/5438—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
    • G01N33/574—Immunoassay; Biospecific binding assay; Materials therefor for cancer
    • G01N33/57407—Specifically defined cancers
    • G01N33/57434—Specifically defined cancers of prostate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process

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  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Molecular Biology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Hematology (AREA)
  • Biomedical Technology (AREA)
  • Urology & Nephrology (AREA)
  • General Health & Medical Sciences (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Food Science & Technology (AREA)
  • Microbiology (AREA)
  • Medicinal Chemistry (AREA)
  • Cell Biology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Biotechnology (AREA)
  • Pathology (AREA)
  • Oncology (AREA)
  • Hospice & Palliative Care (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Micromachines (AREA)
  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020060072981A 2005-10-21 2006-08-02 나노갭 및 나노갭 센서의 제조방법 Expired - Fee Related KR100849384B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
PCT/KR2006/003517 WO2007046582A1 (en) 2005-10-21 2006-09-05 A method for fabricating nanogap and nanogap sensor
JP2008536478A JP2009521332A (ja) 2005-10-21 2006-09-05 ナノギャップおよびナノギャップセンサの製造方法
US11/887,978 US8557567B2 (en) 2005-10-21 2006-09-05 Method for fabricating nanogap and nanogap sensor
EP06783773A EP1938364A4 (en) 2005-10-21 2006-09-05 METHOD FOR MANUFACTURING NANO INTERVAL AND NANO INTERVAL SENSOR
CN200680011497.0A CN101156228B (zh) 2005-10-21 2006-09-05 一种制作纳米间隙和纳米间隙传感器的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20050099585 2005-10-21
KR1020050099585 2005-10-21

Publications (2)

Publication Number Publication Date
KR20070043591A KR20070043591A (ko) 2007-04-25
KR100849384B1 true KR100849384B1 (ko) 2008-07-31

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KR1020060072981A Expired - Fee Related KR100849384B1 (ko) 2005-10-21 2006-08-02 나노갭 및 나노갭 센서의 제조방법

Country Status (4)

Country Link
US (1) US8557567B2 (enExample)
JP (1) JP2009521332A (enExample)
KR (1) KR100849384B1 (enExample)
CN (1) CN101156228B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
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US9030187B2 (en) 2012-11-05 2015-05-12 Samsung Electronics Co., Ltd. Nanogap device and method of processing signal from the nanogap device
US9540234B2 (en) 2012-11-05 2017-01-10 Samsung Electronics Co., Ltd. Nanogap device and method of processing signal from the nanogap device

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US20110020966A1 (en) * 2009-07-23 2011-01-27 Canon Kabushiki Kaisha Method for processing silicon substrate and method for producing substrate for liquid ejecting head
US8468872B2 (en) * 2009-12-29 2013-06-25 Industry-Academic Cooperation Foundation, Yonsei University Hydrogen sensor and method of manufacturing the same
KR101067557B1 (ko) 2009-12-29 2011-09-27 연세대학교 산학협력단 수소 센서 및 그 제조방법
KR101130084B1 (ko) * 2010-04-28 2012-03-28 연세대학교 산학협력단 수소 센서 및 그 제조방법
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KR101694549B1 (ko) * 2010-10-21 2017-01-09 (주)미코바이오메드 나노 갭 패턴 형성 방법, 나노 갭 패턴을 갖는 바이오 센서 및 바이오 센서 제조 방법
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JP2015077652A (ja) 2013-10-16 2015-04-23 クオンタムバイオシステムズ株式会社 ナノギャップ電極およびその製造方法
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US9343569B2 (en) 2014-05-21 2016-05-17 International Business Machines Corporation Vertical compound semiconductor field effect transistor on a group IV semiconductor substrate
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US10247700B2 (en) 2015-10-30 2019-04-02 International Business Machines Corporation Embedded noble metal electrodes in microfluidics
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US11673136B2 (en) * 2017-04-04 2023-06-13 Arizona Board Of Regents On Behalf Of Arizona State University Nanopore devices for sensing biomolecules
WO2019072743A1 (en) 2017-10-13 2019-04-18 Analog Devices Global Unlimited Company DESIGN AND MANUFACTURE OF SENSORS IN NANOGAP
CA3135743A1 (en) 2018-05-09 2019-11-14 Arizona Board Of Regents On Behalf Of Arizona State University Method for electronic detection and quantification of antibodies
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CN112639466A (zh) * 2018-09-14 2021-04-09 应用材料公司 形成纳米孔的方法及生成的结构
EP4269604A3 (en) 2019-01-30 2024-03-20 Arizona Board of Regents on behalf of Arizona State University Bioelectronic circuits, systems and methods for preparing and using them
CN115380120A (zh) 2020-02-28 2022-11-22 代表亚利桑那大学的亚利桑那校董事会 用于对生物聚合物进行测序的方法
CN115552030A (zh) 2020-04-17 2022-12-30 代表亚利桑那大学的亚利桑那校董事会 单分子电子序列检测器及其使用方法
US12276653B2 (en) 2020-05-29 2025-04-15 Arizona Board Of Regents On Behalf Of Arizona State University Bioelectronic devices with programmable adaptors
US20230104609A1 (en) * 2021-10-04 2023-04-06 Tintoria Piana, Inc Diagnostic system and methods of using and manufacturing the same
KR20230060124A (ko) * 2021-10-27 2023-05-04 현대자동차주식회사 수소 센서 및 수소 센서 제조방법
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US9030187B2 (en) 2012-11-05 2015-05-12 Samsung Electronics Co., Ltd. Nanogap device and method of processing signal from the nanogap device
US9540234B2 (en) 2012-11-05 2017-01-10 Samsung Electronics Co., Ltd. Nanogap device and method of processing signal from the nanogap device

Also Published As

Publication number Publication date
US8557567B2 (en) 2013-10-15
JP2009521332A (ja) 2009-06-04
US20090215156A1 (en) 2009-08-27
CN101156228A (zh) 2008-04-02
KR20070043591A (ko) 2007-04-25
CN101156228B (zh) 2013-01-30

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