JP2009512779A - 多成分合金からなるスパッタターゲット及び製造方法 - Google Patents

多成分合金からなるスパッタターゲット及び製造方法 Download PDF

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Publication number
JP2009512779A
JP2009512779A JP2008535939A JP2008535939A JP2009512779A JP 2009512779 A JP2009512779 A JP 2009512779A JP 2008535939 A JP2008535939 A JP 2008535939A JP 2008535939 A JP2008535939 A JP 2008535939A JP 2009512779 A JP2009512779 A JP 2009512779A
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JP
Japan
Prior art keywords
target
sputter target
phase
deformation
sputter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008535939A
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English (en)
Japanese (ja)
Inventor
シュロット マルティン
パヴェル ハンス−ヨアヒム
シュルトハイス マルクス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WC Heraus GmbH and Co KG
Original Assignee
WC Heraus GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WC Heraus GmbH and Co KG filed Critical WC Heraus GmbH and Co KG
Publication of JP2009512779A publication Critical patent/JP2009512779A/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
    • B22F5/10—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of articles with cavities or holes, not otherwise provided for in the preceding subgroups
    • B22F5/106—Tube or ring forms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B22F3/15—Hot isostatic pressing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
    • B22F5/006—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of flat products, e.g. sheets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
JP2008535939A 2005-10-19 2006-10-11 多成分合金からなるスパッタターゲット及び製造方法 Pending JP2009512779A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005050424A DE102005050424B4 (de) 2005-10-19 2005-10-19 Sputtertarget aus mehrkomponentigen Legierungen
PCT/EP2006/009816 WO2007045387A1 (de) 2005-10-19 2006-10-11 Sputtertarget aus mehrkomponentigen legierungen und h erstellverfahren

Publications (1)

Publication Number Publication Date
JP2009512779A true JP2009512779A (ja) 2009-03-26

Family

ID=37450927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008535939A Pending JP2009512779A (ja) 2005-10-19 2006-10-11 多成分合金からなるスパッタターゲット及び製造方法

Country Status (7)

Country Link
JP (1) JP2009512779A (de)
KR (1) KR20080056715A (de)
CN (1) CN101283113A (de)
AT (1) AT506851B1 (de)
DE (1) DE102005050424B4 (de)
TW (1) TW200720458A (de)
WO (1) WO2007045387A1 (de)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102994962A (zh) * 2011-09-09 2013-03-27 日立电线株式会社 圆筒型溅射靶材、使用其的配线基板以及薄膜晶体管
WO2013145424A1 (ja) 2012-03-27 2013-10-03 三菱マテリアル株式会社 銀系円筒ターゲット及びその製造方法
WO2019111900A1 (ja) 2017-12-06 2019-06-13 田中貴金属工業株式会社 金スパッタリングターゲットとその製造方法
WO2019111945A1 (ja) 2017-12-06 2019-06-13 田中貴金属工業株式会社 金スパッタリングターゲットの製造方法及び金膜の製造方法
JP2019536897A (ja) * 2016-09-29 2019-12-19 プランゼー エスエー スパッタリングターゲット
KR20210103593A (ko) 2016-06-02 2021-08-23 다나카 기킨조쿠 고교 가부시키가이샤 금 스퍼터링 타깃

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006003279B4 (de) * 2006-01-23 2010-03-25 W.C. Heraeus Gmbh Sputtertarget mit hochschmelzender Phase
SG174652A1 (en) * 2010-03-31 2011-10-28 Heraeus Gmbh W C Composition of sputtering target, sputtering target, and method of producing the same
DE102012017033A1 (de) * 2012-08-29 2014-05-28 Oerlikon Trading Ag, Trübbach PVD Lichtbogenbeschichtung mit verbesserten reibungsmindernden und verschleissreduzierenden Eigenschaften
GB201216283D0 (en) 2012-09-12 2012-10-24 Stannah Stairlifts Ltd Improvements in or relating to stairlifts
EP3168325B1 (de) * 2015-11-10 2022-01-05 Materion Advanced Materials Germany GmbH Sputtertarget auf der basis einer silberlegierung
CN111590279A (zh) * 2020-06-03 2020-08-28 福建阿石创新材料股份有限公司 一种高纯金属旋转靶材及其制备方法
CN112030119A (zh) * 2020-08-27 2020-12-04 苏州思菲科新材料科技有限公司 一种铟管靶及其制备方法
CN112981335B (zh) * 2021-02-09 2022-10-04 丰联科光电(洛阳)股份有限公司 一种高纯铜管靶的制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2757287B2 (ja) * 1989-11-02 1998-05-25 日立金属株式会社 タングステンターゲットの製造方法
JP3445276B2 (ja) * 1993-12-14 2003-09-08 株式会社東芝 配線形成用Ｍｏ−ＷターゲットとＭｏ−Ｗ配線薄膜、およびそれを用いた液晶表示装置
DE19710903A1 (de) * 1997-03-15 1998-09-17 Leybold Materials Gmbh Sputtertarget zur Herstellung von Phase-Change Schichten (optischen Speicherschichten)
DE19735734B4 (de) * 1997-08-18 2008-01-03 W.C. Heraeus Gmbh Pulvermetallurgisches Sputtertarget auf der Basis von Wismut und Verfahren zu seiner Herstellung
US20020014406A1 (en) * 1998-05-21 2002-02-07 Hiroshi Takashima Aluminum target material for sputtering and method for producing same
JP3743740B2 (ja) * 1998-07-27 2006-02-08 日立金属株式会社 Ｍｏ系焼結ターゲット材
US6176944B1 (en) * 1999-11-01 2001-01-23 Praxair S.T. Technology, Inc. Method of making low magnetic permeability cobalt sputter targets
DE19953470A1 (de) * 1999-11-05 2001-05-23 Heraeus Gmbh W C Rohrtarget
DE10017414A1 (de) * 2000-04-07 2001-10-11 Unaxis Materials Deutschland G Sputtertarget auf der Basis eines Metalls oder einer Metalllegierung und Verfahren zu dessen Herstellung
US6759005B2 (en) * 2002-07-23 2004-07-06 Heraeus, Inc. Fabrication of B/C/N/O/Si doped sputtering targets
JP3754011B2 (ja) * 2002-09-04 2006-03-08 デプト株式会社 電子部品用金属材料、電子部品、電子機器、金属材料の加工方法、電子部品の製造方法及び電子光学部品
US20050279630A1 (en) * 2004-06-16 2005-12-22 Dynamic Machine Works, Inc. Tubular sputtering targets and methods of flowforming the same
AT7491U1 (de) * 2004-07-15 2005-04-25 Plansee Ag Werkstoff für leitbahnen aus kupferlegierung

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013057112A (ja) * 2011-09-09 2013-03-28 Hitachi Cable Ltd 円筒型スパッタリングターゲット材、それを用いた配線基板及び薄膜トランジスタ
CN102994962A (zh) * 2011-09-09 2013-03-27 日立电线株式会社 圆筒型溅射靶材、使用其的配线基板以及薄膜晶体管
WO2013145424A1 (ja) 2012-03-27 2013-10-03 三菱マテリアル株式会社 銀系円筒ターゲット及びその製造方法
JP2013204052A (ja) * 2012-03-27 2013-10-07 Mitsubishi Materials Corp 銀系円筒ターゲット及びその製造方法
KR20160022934A (ko) 2012-03-27 2016-03-02 미쓰비시 마테리알 가부시키가이샤 은계 원통 타깃 및 그 제조 방법
US11817299B2 (en) 2016-06-02 2023-11-14 Tanaka Kikinzoku Kogyo K.K. Gold sputtering target
US11569074B2 (en) 2016-06-02 2023-01-31 Tanaka Kikinzoku Kogyo K.K. Gold sputtering target
KR20210103593A (ko) 2016-06-02 2021-08-23 다나카 기킨조쿠 고교 가부시키가이샤 금 스퍼터링 타깃
JP7108606B2 (ja) 2016-09-29 2022-07-28 プランゼー エスエー スパッタリングターゲット
JP2019536897A (ja) * 2016-09-29 2019-12-19 プランゼー エスエー スパッタリングターゲット
US11569075B2 (en) 2016-09-29 2023-01-31 Plansee Se Sputtering target
KR20200085290A (ko) 2017-12-06 2020-07-14 다나카 기킨조쿠 고교 가부시키가이샤 금 스퍼터링 타깃과 그 제조 방법
US11555238B2 (en) 2017-12-06 2023-01-17 Tanaka Kikinzoku Kogyo K. K. Producing method for gold sputtering target and producing method for gold film
US11560620B2 (en) 2017-12-06 2023-01-24 Tanaka Kikinzoku Kogyo K. K. Gold sputtering target and method for producing the same
KR20200085291A (ko) 2017-12-06 2020-07-14 다나카 기킨조쿠 고교 가부시키가이샤 금 스퍼터링 타깃의 제조 방법 및 금막의 제조 방법
WO2019111945A1 (ja) 2017-12-06 2019-06-13 田中貴金属工業株式会社 金スパッタリングターゲットの製造方法及び金膜の製造方法
US11795540B2 (en) 2017-12-06 2023-10-24 Tanaka Kikinzoku Kogyo K. K. Gold sputtering target and method for producing the same
WO2019111900A1 (ja) 2017-12-06 2019-06-13 田中貴金属工業株式会社 金スパッタリングターゲットとその製造方法

Also Published As

Publication number Publication date
TW200720458A (en) 2007-06-01
AT506851B1 (de) 2010-02-15
CN101283113A (zh) 2008-10-08
DE102005050424A1 (de) 2007-04-26
DE102005050424B4 (de) 2009-10-22
AT506851A1 (de) 2009-12-15
WO2007045387A1 (de) 2007-04-26
KR20080056715A (ko) 2008-06-23

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