JP2009510387A5 - - Google Patents

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Publication number
JP2009510387A5
JP2009510387A5 JP2008533944A JP2008533944A JP2009510387A5 JP 2009510387 A5 JP2009510387 A5 JP 2009510387A5 JP 2008533944 A JP2008533944 A JP 2008533944A JP 2008533944 A JP2008533944 A JP 2008533944A JP 2009510387 A5 JP2009510387 A5 JP 2009510387A5
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JP
Japan
Prior art keywords
crucible
silicon
protective coating
silica
silicon nitride
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JP2008533944A
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English (en)
Japanese (ja)
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JP4917607B2 (ja
JP2009510387A (ja
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Priority claimed from PCT/EP2006/009671 external-priority patent/WO2007039310A1/en
Publication of JP2009510387A publication Critical patent/JP2009510387A/ja
Publication of JP2009510387A5 publication Critical patent/JP2009510387A5/ja
Application granted granted Critical
Publication of JP4917607B2 publication Critical patent/JP4917607B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008533944A 2005-10-06 2006-10-06 ケイ素の結晶化用の坩堝およびその製造方法 Expired - Fee Related JP4917607B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP05447224 2005-10-06
EP05447224.6 2005-10-06
PCT/EP2006/009671 WO2007039310A1 (en) 2005-10-06 2006-10-06 Crucible for the crystallization of silicon and process for making the same

Publications (3)

Publication Number Publication Date
JP2009510387A JP2009510387A (ja) 2009-03-12
JP2009510387A5 true JP2009510387A5 (https=) 2009-08-20
JP4917607B2 JP4917607B2 (ja) 2012-04-18

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ID=35735284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008533944A Expired - Fee Related JP4917607B2 (ja) 2005-10-06 2006-10-06 ケイ素の結晶化用の坩堝およびその製造方法

Country Status (18)

Country Link
US (1) US8298333B2 (https=)
EP (1) EP1954856B1 (https=)
JP (1) JP4917607B2 (https=)
KR (1) KR101212924B1 (https=)
CN (1) CN101278078B (https=)
AT (1) ATE439461T1 (https=)
AU (1) AU2006298957B2 (https=)
BR (1) BRPI0616485A2 (https=)
CA (1) CA2624887C (https=)
DE (1) DE602006008498D1 (https=)
ES (1) ES2327570T3 (https=)
NO (1) NO20082102L (https=)
PL (1) PL1954856T3 (https=)
RU (1) RU2401889C2 (https=)
TW (1) TWI400369B (https=)
UA (1) UA89284C2 (https=)
WO (1) WO2007039310A1 (https=)
ZA (1) ZA200803754B (https=)

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CN103526290A (zh) * 2013-10-24 2014-01-22 阿特斯(中国)投资有限公司 多晶硅铸锭的制备方法
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US9192983B2 (en) 2013-11-26 2015-11-24 General Electric Company Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys
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TWI663126B (zh) 2014-07-09 2019-06-21 法商維蘇威法國公司 包含可磨塗層之輥、其製造方法及其用途
CN104140759B (zh) * 2014-07-17 2016-08-24 宁波晶元太阳能有限公司 多晶硅铸锭用石英坩埚底部引晶涂层的制备方法
CN105063757B (zh) * 2015-09-17 2017-12-29 晶科能源有限公司 一种低氧喷涂方法
CN105603374B (zh) * 2016-02-19 2018-06-12 中科院微电子研究所昆山分所 一种在多晶硅铸锭坩埚上制备Si3N4薄膜的方法
KR102571434B1 (ko) * 2016-12-28 2023-08-29 오씨아이 주식회사 실리카 도가니 내벽에 질화규소를 코팅하는 방법
CN107162001A (zh) * 2017-06-20 2017-09-15 晋能清洁能源光伏工程有限责任公司 一种多晶硅分凝铸造方法及分凝装置
CN107876362B (zh) * 2017-11-10 2021-03-23 江苏协鑫硅材料科技发展有限公司 大尺寸铸锭用坩埚涂层的自动喷涂工艺及坩埚
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CN109704782B (zh) * 2019-01-30 2021-12-14 中国科学院理化技术研究所 一种用于光伏多晶硅生产的Si2N2O陶瓷粉体的制备方法
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