JP2009286688A - カーボンナノチューブフィルムの製造方法 - Google Patents
カーボンナノチューブフィルムの製造方法 Download PDFInfo
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- JP2009286688A JP2009286688A JP2009128147A JP2009128147A JP2009286688A JP 2009286688 A JP2009286688 A JP 2009286688A JP 2009128147 A JP2009128147 A JP 2009128147A JP 2009128147 A JP2009128147 A JP 2009128147A JP 2009286688 A JP2009286688 A JP 2009286688A
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- carbon nanotube
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- nanotube film
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- 239000002238 carbon nanotube film Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 69
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 57
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 239000003054 catalyst Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 15
- 239000003960 organic solvent Substances 0.000 claims description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 230000000881 depressing effect Effects 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 4
- 230000003197 catalytic effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 16
- 229910052799 carbon Inorganic materials 0.000 description 11
- 239000012159 carrier gas Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002109 single walled nanotube Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000002079 double walled nanotube Substances 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000002048 multi walled nanotube Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010036 direct spinning Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- -1 methane (CH 4 ) Chemical class 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/74—Iron group metals
- B01J23/745—Iron
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/74—Iron group metals
- B01J23/75—Cobalt
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/74—Iron group metals
- B01J23/755—Nickel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/162—Preparation characterised by catalysts
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/08—Aligned nanotubes
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- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/34—Length
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
- Y10S977/843—Gas phase catalytic growth, i.e. chemical vapor deposition
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- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Nanotechnology (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
【解決手段】本発明のカーボンナノチューブフィルムの製造方法は、基板を提供する第一ステップと、該基板に、少なくとも一つの、幅が1μm〜20μmの触媒層を堆積させる第二ステップと、CVD法により、前記基板に少なくとも一つのカーボンナノチューブアレイを成長させる第三ステップと、前記基板の表面に平行な方向に沿って前記少なくとも一つのカーボンナノチューブアレイを倒して、少なくとも一枚のカーボンナノチューブを形成する第四ステップと、を含む。
【選択図】図1
Description
Claims (5)
- 基板を提供する第一ステップと、
該基板に、少なくとも一つの、幅が1μm〜20μmの触媒層を堆積させる第二ステップと、
CVD法により、前記基板に少なくとも一つのカーボンナノチューブアレイを成長させる第三ステップと、
前記基板の表面に平行な方向に沿って前記少なくとも一つのカーボンナノチューブアレイを倒して、少なくとも一枚のカーボンナノチューブを形成する第四ステップと、
を含むことを特徴とするカーボンナノチューブフィルムの製造方法。 - 前記第二ステップにおいて、該基板に二つ以上の触媒層を堆積させて、
前記触媒層を、互いに平行に配置させることを特徴とする、請求項1に記載のカーボンナノチューブフィルムの製造方法。 - 前記第二ステップにおいて、該基板に二つ以上の触媒層を堆積させて、
隣接する前記触媒層の間の距離を、10μm〜5mmに設けることを特徴とする、請求項1又は2に記載のカーボンナノチューブフィルムの製造方法。 - 前記第四ステップにおいて、有機溶剤処理方法、機械力処理方法又は気流処理方法を利用することを特徴とする、請求項1に記載のカーボンナノチューブフィルムの製造方法。
- 前記第四ステップの後、第五ステップを行い、
該第五ステップは、
フォトレジストを利用して前記カーボンナノチューブフィルムを被覆させる第一サブステップと、
露光又は造影方法により、前記触媒層と接触したカーボンナノチューブ上に位置するフォトレジストを除去する第二サブステップと、
プラズマエッチング法により、前記触媒層と接触したカーボンナノチューブ及び前記触媒層を除去する第三サブステップと、
前記基板に接着されたカーボンナノチューブフィルムを覆うフォトレジストを除去する第四サブステップと、
を含むことを特徴とする、請求項1に記載のカーボンナノチューブフィルムの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810067529XA CN101591015B (zh) | 2008-05-28 | 2008-05-28 | 带状碳纳米管薄膜的制备方法 |
CN200810067529.X | 2008-05-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009286688A true JP2009286688A (ja) | 2009-12-10 |
JP5065336B2 JP5065336B2 (ja) | 2012-10-31 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009128147A Active JP5065336B2 (ja) | 2008-05-28 | 2009-05-27 | カーボンナノチューブフィルムの製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8236389B2 (ja) |
JP (1) | JP5065336B2 (ja) |
CN (1) | CN101591015B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010206785A (ja) * | 2009-02-27 | 2010-09-16 | Qinghua Univ | 熱音響装置 |
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EP1814713A4 (en) | 2004-11-09 | 2017-07-26 | Board of Regents, The University of Texas System | The fabrication and application of nanofiber ribbons and sheets and twisted and non-twisted nanofiber yarns |
CN101582381B (zh) * | 2008-05-14 | 2011-01-26 | 鸿富锦精密工业(深圳)有限公司 | 薄膜晶体管及其阵列的制备方法 |
CN102063213B (zh) * | 2009-11-18 | 2013-04-24 | 北京富纳特创新科技有限公司 | 触摸屏及显示装置 |
CN102063214B (zh) * | 2009-11-18 | 2017-05-24 | 北京富纳特创新科技有限公司 | 触摸屏及显示装置 |
CN101786617A (zh) | 2010-03-18 | 2010-07-28 | 北京富纳特创新科技有限公司 | 碳纳米管阵列结构及其制备方法 |
CN101844757B (zh) | 2010-03-29 | 2012-07-11 | 北京富纳特创新科技有限公司 | 碳纳米管膜的制备方法 |
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CN101881659B (zh) | 2010-06-25 | 2013-07-31 | 清华大学 | 电磁波检测装置 |
CN101880035A (zh) | 2010-06-29 | 2010-11-10 | 清华大学 | 碳纳米管结构 |
US9468043B2 (en) * | 2010-11-17 | 2016-10-11 | Battelle Memorial Institute | Carbon nanotube thin film laminate resistive heater |
CN102501444B (zh) * | 2011-10-08 | 2014-04-23 | 山东大学 | 一种二氧化钛纳米管阵列-碳纳米管-羟基磷灰石生物复合涂层及其制备 |
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CN103395240B (zh) * | 2013-08-14 | 2015-11-11 | 苏州捷迪纳米科技有限公司 | 碳纳米复合材料的制备方法以及相应碳纳米复合材料 |
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CN109326714B (zh) * | 2018-08-29 | 2020-06-26 | 北京大学 | 碳纳米管场效应管的制备方法、制备装置及电子器件 |
CN109343166A (zh) * | 2018-12-05 | 2019-02-15 | 中国科学技术大学 | 基于多壁碳纳米管的微偏振片阵列及其制作方法 |
CN110002431B (zh) * | 2019-03-27 | 2020-12-18 | 华中科技大学 | 一种碳纳米管薄膜及其制备方法 |
US11417729B2 (en) * | 2019-08-29 | 2022-08-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transistors with channels formed of low-dimensional materials and method forming same |
DE102020109756A1 (de) | 2019-08-29 | 2021-03-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Transistoren mit kanälen gebildet aus niedrigdimensionalenmaterialien und verfahren zum bilden derselben |
CN111715182A (zh) * | 2020-05-18 | 2020-09-29 | 中国石油天然气股份有限公司 | 一种除油碳纤维管海绵及其制备和应用方法 |
CN113074806B (zh) * | 2021-03-25 | 2022-06-14 | 华中科技大学 | 一种自供电声波传感装置、碳纳米管阵列及其制备方法 |
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CN101591015A (zh) | 2009-12-02 |
US20090297732A1 (en) | 2009-12-03 |
US8236389B2 (en) | 2012-08-07 |
JP5065336B2 (ja) | 2012-10-31 |
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