JP2009272394A - 3次元フォトニック結晶を用いた発光素子 - Google Patents
3次元フォトニック結晶を用いた発光素子 Download PDFInfo
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- JP2009272394A JP2009272394A JP2008120176A JP2008120176A JP2009272394A JP 2009272394 A JP2009272394 A JP 2009272394A JP 2008120176 A JP2008120176 A JP 2008120176A JP 2008120176 A JP2008120176 A JP 2008120176A JP 2009272394 A JP2009272394 A JP 2009272394A
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- 239000004038 photonic crystal Substances 0.000 title claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 44
- 230000007547 defect Effects 0.000 claims description 25
- 238000012546 transfer Methods 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 3
- 238000007599 discharging Methods 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 description 10
- 239000000969 carrier Substances 0.000 description 6
- 238000005253 cladding Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000002269 spontaneous effect Effects 0.000 description 6
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 235000008694 Humulus lupulus Nutrition 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005520 electrodynamics Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
- H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
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Abstract
【解決手段】発光素子10は、3次元フォトニック結晶20を有する。該3次元フォトニック結晶は、活性媒質を含む共振器を形成する第1の欠陥部70と、該共振器で発生した光を外部に取り出すための導波路を形成する第2の欠陥部80と、P型半導体により形成されたPクラッド部40と、第1のN型半導体により形成されたNクラッド部50とを有する。第2の欠陥部は、Pクラッド部及びNクラッド部のうち該Nクラッド部にのみ設けられている。そして、第2の欠陥部の少なくとも一部は、第2のN型半導体により形成され、外部に熱を放射する放熱手段を構成している。
【選択図】図1
Description
20 3次元フォトニック結晶
30 P型電極
40,41 Pクラッド部
50 Nクラッド部
60 N型電極
70 活性部
80,82,822 導波路
821 伝熱構造体
90 絶縁層
91 電流狭窄領域
100 共振器
101 半導体周期構造
102 犠牲層
103 導波路
104 点欠陥部
105 絶縁部
200 電気回路
Claims (6)
- 3次元フォトニック結晶を用いた発光素子であって、
該3次元フォトニック結晶は、
活性媒質を含む共振器を形成する第1の欠陥部と、
該共振器で発生した光を外部に取り出すための導波路を形成する第2の欠陥部と、
P型半導体により形成されたPクラッド部と、
第1のN型半導体により形成されたNクラッド部とを有し、
前記第2の欠陥部は、前記Pクラッド部及び前記Nクラッド部のうち該Nクラッド部にのみ設けられており、
前記第2の欠陥部の少なくとも一部は、第2のN型半導体により形成され、外部に熱を放射する放熱手段を構成していることを特徴とする発光素子。 - 前記第2のN型半導体の熱伝導度が、前記第1のN型半導体の熱伝導度よりも高いことを特徴とする請求項1に記載の発光素子。
- 前記Pクラッド部に、前記P型半導体よりも電気伝導度が小さい材料により形成された、前記共振器に対する電流狭窄領域が設けられていることを特徴とする請求項1又は2に記載の発光素子。
- 前記第2の欠陥部の出口側端部に、伝熱構造体が配置されており、
該伝熱構造体が該発光素子の電極に接続されていることを特徴とする請求項1から3のいずれか1つに記載の発光素子。 - 前記伝熱構造体は、前記出口側端部での光学的な反射を抑制する膜として形成されていることを特徴とする請求項4に記載の発光素子。
- 前記第2の欠陥部が、前記出口側端部に向かって断面積が増加するテーパ構造を含むことを特徴とする請求項4又は5に記載の発光素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2008120176A JP5188259B2 (ja) | 2008-05-02 | 2008-05-02 | 3次元フォトニック結晶を用いた発光素子 |
US12/434,527 US7760973B2 (en) | 2008-05-02 | 2009-05-01 | Light emitting device using three-dimensional photonic crystal |
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JP2008120176A JP5188259B2 (ja) | 2008-05-02 | 2008-05-02 | 3次元フォトニック結晶を用いた発光素子 |
Publications (3)
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JP2009272394A true JP2009272394A (ja) | 2009-11-19 |
JP2009272394A5 JP2009272394A5 (ja) | 2011-06-23 |
JP5188259B2 JP5188259B2 (ja) | 2013-04-24 |
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JP2008120176A Expired - Fee Related JP5188259B2 (ja) | 2008-05-02 | 2008-05-02 | 3次元フォトニック結晶を用いた発光素子 |
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US (1) | US7760973B2 (ja) |
JP (1) | JP5188259B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10326256B2 (en) | 2016-08-29 | 2019-06-18 | Seiko Epson Corporation | Surface emitting laser and atomic oscillator |
Families Citing this family (1)
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JP5870833B2 (ja) * | 2012-04-24 | 2016-03-01 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005078512A1 (ja) * | 2004-02-17 | 2005-08-25 | The Furukawa Electric Co., Ltd. | フォトニック結晶半導体デバイスおよびその製造方法 |
JP2006047663A (ja) * | 2004-08-04 | 2006-02-16 | Canon Inc | 3次元フォトニック結晶およびそれを用いた光学素子 |
WO2006055602A2 (en) * | 2004-11-16 | 2006-05-26 | Canon Kabushiki Kaisha | Light-emitting photonic device |
JP2007133331A (ja) * | 2005-11-14 | 2007-05-31 | Canon Inc | 導波路及びそれを有するデバイス |
JP2008034697A (ja) * | 2006-07-31 | 2008-02-14 | Canon Inc | 共振器及びそれを有するデバイス |
JP2008085033A (ja) * | 2006-09-27 | 2008-04-10 | Canon Inc | 発光素子およびそれを用いた表示素子 |
JP2009218489A (ja) * | 2008-03-12 | 2009-09-24 | Canon Inc | フォトニック結晶発光素子及び発光装置 |
Family Cites Families (2)
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JP2001257425A (ja) | 2000-03-13 | 2001-09-21 | Matsushita Electric Ind Co Ltd | 半導体レーザ素子及びその製造方法 |
JP5322453B2 (ja) * | 2008-02-07 | 2013-10-23 | キヤノン株式会社 | 3次元フォトニック結晶発光素子 |
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2008
- 2008-05-02 JP JP2008120176A patent/JP5188259B2/ja not_active Expired - Fee Related
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005078512A1 (ja) * | 2004-02-17 | 2005-08-25 | The Furukawa Electric Co., Ltd. | フォトニック結晶半導体デバイスおよびその製造方法 |
JP2006047663A (ja) * | 2004-08-04 | 2006-02-16 | Canon Inc | 3次元フォトニック結晶およびそれを用いた光学素子 |
WO2006055602A2 (en) * | 2004-11-16 | 2006-05-26 | Canon Kabushiki Kaisha | Light-emitting photonic device |
JP2007133331A (ja) * | 2005-11-14 | 2007-05-31 | Canon Inc | 導波路及びそれを有するデバイス |
JP2008034697A (ja) * | 2006-07-31 | 2008-02-14 | Canon Inc | 共振器及びそれを有するデバイス |
JP2008085033A (ja) * | 2006-09-27 | 2008-04-10 | Canon Inc | 発光素子およびそれを用いた表示素子 |
JP2009218489A (ja) * | 2008-03-12 | 2009-09-24 | Canon Inc | フォトニック結晶発光素子及び発光装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10326256B2 (en) | 2016-08-29 | 2019-06-18 | Seiko Epson Corporation | Surface emitting laser and atomic oscillator |
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US20090274414A1 (en) | 2009-11-05 |
US7760973B2 (en) | 2010-07-20 |
JP5188259B2 (ja) | 2013-04-24 |
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