JP2009267391A5 - - Google Patents
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- JP2009267391A5 JP2009267391A5 JP2009079530A JP2009079530A JP2009267391A5 JP 2009267391 A5 JP2009267391 A5 JP 2009267391A5 JP 2009079530 A JP2009079530 A JP 2009079530A JP 2009079530 A JP2009079530 A JP 2009079530A JP 2009267391 A5 JP2009267391 A5 JP 2009267391A5
- Authority
- JP
- Japan
- Prior art keywords
- flow rate
- silicon
- band gap
- range
- rate ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000007789 gas Substances 0.000 claims 26
- 239000002210 silicon-based material Substances 0.000 claims 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 17
- 229910001873 dinitrogen Inorganic materials 0.000 claims 17
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 15
- 238000000034 method Methods 0.000 claims 7
- 238000003860 storage Methods 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 claims 5
- 238000000151 deposition Methods 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009079530A JP2009267391A (ja) | 2008-03-31 | 2009-03-27 | 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 |
| PCT/JP2009/057006 WO2009123325A1 (ja) | 2008-03-31 | 2009-03-30 | 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 |
| KR1020107021877A KR20100129311A (ko) | 2008-03-31 | 2009-03-30 | 질화규소막의 제조 방법, 질화규소막 적층체의 제조 방법, 컴퓨터 판독 가능한 기억 매체, 및 플라즈마 ｃｖｄ 장치 |
| US12/935,138 US8119545B2 (en) | 2008-03-31 | 2009-03-30 | Forming a silicon nitride film by plasma CVD |
| TW098110757A TW200952078A (en) | 2008-03-31 | 2009-03-31 | Process for producing silicon nitride film, process for producing silicon nitride film laminate, computer-readable storage medium, and plasma cvd device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008092419 | 2008-03-31 | ||
| JP2009079530A JP2009267391A (ja) | 2008-03-31 | 2009-03-27 | 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009267391A JP2009267391A (ja) | 2009-11-12 |
| JP2009267391A5 true JP2009267391A5 (enExample) | 2012-08-09 |
Family
ID=41392777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009079530A Pending JP2009267391A (ja) | 2008-03-31 | 2009-03-27 | 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009267391A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6787813B2 (ja) * | 2017-02-16 | 2020-11-18 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| JP7581098B2 (ja) * | 2021-03-19 | 2024-11-12 | キオクシア株式会社 | 半導体装置の製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998033362A1 (en) * | 1997-01-29 | 1998-07-30 | Tadahiro Ohmi | Plasma device |
| JP3978817B2 (ja) * | 1997-07-17 | 2007-09-19 | ソニー株式会社 | 半導体装置の製造方法 |
| JP4332263B2 (ja) * | 1998-10-07 | 2009-09-16 | エルジー ディスプレイ カンパニー リミテッド | 薄膜トランジスタの製造方法 |
-
2009
- 2009-03-27 JP JP2009079530A patent/JP2009267391A/ja active Pending
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