JP2009267391A - 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 - Google Patents
窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 Download PDFInfo
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- JP2009267391A JP2009267391A JP2009079530A JP2009079530A JP2009267391A JP 2009267391 A JP2009267391 A JP 2009267391A JP 2009079530 A JP2009079530 A JP 2009079530A JP 2009079530 A JP2009079530 A JP 2009079530A JP 2009267391 A JP2009267391 A JP 2009267391A
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- silicon nitride
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 176
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 176
- 238000000034 method Methods 0.000 title claims description 80
- 230000008569 process Effects 0.000 title claims description 51
- 238000003860 storage Methods 0.000 title claims description 17
- 239000007789 gas Substances 0.000 claims abstract description 216
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 109
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 88
- 239000002210 silicon-based material Substances 0.000 claims abstract description 82
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 72
- 238000012545 processing Methods 0.000 claims description 124
- 238000004519 manufacturing process Methods 0.000 claims description 42
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 21
- 239000010408 film Substances 0.000 description 278
- 239000004065 semiconductor Substances 0.000 description 28
- 229910052710 silicon Inorganic materials 0.000 description 25
- 239000010703 silicon Substances 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 230000005540 biological transmission Effects 0.000 description 18
- 239000010410 layer Substances 0.000 description 16
- 230000005855 radiation Effects 0.000 description 15
- 239000000758 substrate Substances 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 12
- 239000011261 inert gas Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 238000005755 formation reaction Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000000644 propagated effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical compound [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009079530A JP2009267391A (ja) | 2008-03-31 | 2009-03-27 | 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 |
| PCT/JP2009/057006 WO2009123325A1 (ja) | 2008-03-31 | 2009-03-30 | 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 |
| KR1020107021877A KR20100129311A (ko) | 2008-03-31 | 2009-03-30 | 질화규소막의 제조 방법, 질화규소막 적층체의 제조 방법, 컴퓨터 판독 가능한 기억 매체, 및 플라즈마 ｃｖｄ 장치 |
| US12/935,138 US8119545B2 (en) | 2008-03-31 | 2009-03-30 | Forming a silicon nitride film by plasma CVD |
| TW098110757A TW200952078A (en) | 2008-03-31 | 2009-03-31 | Process for producing silicon nitride film, process for producing silicon nitride film laminate, computer-readable storage medium, and plasma cvd device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008092419 | 2008-03-31 | ||
| JP2009079530A JP2009267391A (ja) | 2008-03-31 | 2009-03-27 | 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009267391A true JP2009267391A (ja) | 2009-11-12 |
| JP2009267391A5 JP2009267391A5 (enExample) | 2012-08-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009079530A Pending JP2009267391A (ja) | 2008-03-31 | 2009-03-27 | 窒化珪素膜の製造方法、窒化珪素膜積層体の製造方法、コンピュータ読み取り可能な記憶媒体およびプラズマｃｖｄ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009267391A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018133477A (ja) * | 2017-02-16 | 2018-08-23 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
| JP2022144977A (ja) * | 2021-03-19 | 2022-10-03 | キオクシア株式会社 | 半導体装置の製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998033362A1 (en) * | 1997-01-29 | 1998-07-30 | Tadahiro Ohmi | Plasma device |
| JPH1140753A (ja) * | 1997-07-17 | 1999-02-12 | Sony Corp | 半導体装置およびその製造方法 |
| JP2000183359A (ja) * | 1998-10-07 | 2000-06-30 | Furontekku:Kk | 薄膜トランジスタとその製造方法および液晶表示装置ならびに薄膜成膜装置 |
-
2009
- 2009-03-27 JP JP2009079530A patent/JP2009267391A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998033362A1 (en) * | 1997-01-29 | 1998-07-30 | Tadahiro Ohmi | Plasma device |
| JPH1140753A (ja) * | 1997-07-17 | 1999-02-12 | Sony Corp | 半導体装置およびその製造方法 |
| JP2000183359A (ja) * | 1998-10-07 | 2000-06-30 | Furontekku:Kk | 薄膜トランジスタとその製造方法および液晶表示装置ならびに薄膜成膜装置 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018133477A (ja) * | 2017-02-16 | 2018-08-23 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
| JP2022144977A (ja) * | 2021-03-19 | 2022-10-03 | キオクシア株式会社 | 半導体装置の製造方法 |
| JP7581098B2 (ja) | 2021-03-19 | 2024-11-12 | キオクシア株式会社 | 半導体装置の製造方法 |
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