JP2009260317A - ウェーハをキャリアに付加しかつ/またはキャリアから分離させるためのデバイスおよび方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000012528 membrane Substances 0.000 claims description 52
- 238000010438 heat treatment Methods 0.000 claims description 21
- 125000006850 spacer group Chemical group 0.000 claims description 12
- 238000000926 separation method Methods 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 230000006378 damage Effects 0.000 abstract description 4
- 230000008569 process Effects 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000004568 cement Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000005273 aeration Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000012876 carrier material Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】本発明は、ウェーハをキャリアに付加し、かつ/または、それをキャリアから分離させるための、ウェーハの接触表面に平行に位置合わせすることができる、接触表面と少なくとも部分的な接触をするための1つの接触面を備えた変形可能膜と、規定された様式で制御することができる膜の変形のために、接触面とは逆方向にある変形手段と、ウェーハを膜に付着させるための付着手段とを有するデバイス、および当該デバイスを用いてウェーハをキャリアに付加し、かつ/または、それをキャリアから分離させるための方法に関する。
【選択図】図1
Description
ウェーハの接触表面に平行に位置合わせすることができる、接触表面と少なくとも部分的な接触をするための1つの接触面を備えた変形可能膜と、
規定された様式で制御することができる膜の変形のために、接触面とは逆方向にある変形手段と、
ウェーハを膜に付着させるための付着手段と、を具備してなるデバイスに関する。
吸引トラフ、および吸引トラフを覆う膜により形成される吸引空間と、
吸引空間に接続される真空ポンプと、を備える。
吸引トラフの変形可能底部と、
底部からの膜の間隔規定用の少なくとも1つの、好ましくは複数のスペーサと、を備える。
圧力トラフ、および圧力トラフを覆う底部によって形成される圧力空間と、
圧力空間に接続される圧力ポンプと、を備え得る。
a)変形可能膜の、その接触面がウェーハの接触表面に平行な状態での位置合せ
b)膜とウェーハとの間の接触
c)変形手段による、接触面の方向への膜の凸状に行われる変形および分離
a)膜とウェーハの間の接触、および付着手段によるウェーハの膜への付着と、
b)変形可能膜およびそれに付着しているウェーハと、キャリアとの位置合せと、
c)変形手段による膜およびウェーハの凸状変形、ならびにウェーハのキャリアへの付加と、により付加するために行うこともできる。
2,2' キャリア
3 接続手段
4 ウェーハ
4k 接触表面
4r 縁部
5 膜
5k 接触面
6 スペーサ
6d ボール直径
7 吸引トラフ
7b 底部
7s 端面
7u 周辺壁部
8 圧力空間
9 圧力トラフ
9b 底部
9s 端面
9u 周辺壁部
10 リミッタ
11 圧力ライン
12 吸引ライン
13 孔
14,15 加熱手段
16 負圧固定手段
17 吸引空間
18 グリッパ
19 チップ
20 突出部
Claims (16)
- ウェーハ(4)をキャリア(2)に付加し、かつ/または、それを前記キャリア(2)から分離させるためのデバイスであって、
前記ウェーハ(4)の接触表面(4k)に平行に位置合わせすることができる、接触表面(4k)と少なくとも部分的な接触をするための1つの接触面(5k)を備えた変形可能膜(5)と、
規定された様式で制御することができる前記膜(5)の変形のために、前記接触面(5k)とは逆方向にある変形手段と、
前記ウェーハ(4)を前記膜(5)に付着させるための付着手段と、
を具備してなることを特徴とするデバイス。 - 前記膜(5)が、特に前記膜(5)を貫通する、好ましくはその数および/または直径が規定された孔(13)によって全透過性であることを特徴とする請求項1に記載のデバイス。
- 前記膜(5)を、前記付着手段により圧力差にさらすことができるようになっていることを特徴とする請求項1または請求項2に記載のデバイス。
- 前記付着手段が、
吸引トラフ(7)、および前記吸引トラフ(7)を覆う膜(5)により形成される吸引空間(17)と、
前記吸引空間(17)に接続される真空ポンプと、
を具備してなることを特徴とする請求項1から請求項3のいずれか一項に記載のデバイス。 - 前記吸引トラフ(7)が、圧力で変形させることができる特に不透過性の底部(7b)、および周辺壁部(7u)により形成されることを特徴とする請求項4に記載のデバイス。
- 前記変形手段が、
前記吸引トラフ(7)の前記変形可能底部(7b)と、
前記底部(7b)からの前記膜(5)の間隔規定用の少なくとも1つの、好ましくは複数のスペーサ(6)と、
を具備してなることを特徴とする請求項1から請求項5のいずれか一項に記載のデバイス。 - 前記スペーサ(6)が、縁部がなくされ、特に球形であることを特徴とする請求項1から請求項6のいずれか一項に記載のデバイス。
- 前記変形手段が、
圧力トラフ(9)、および前記圧力トラフ(9)を覆う底部(9b)によって形成される圧力空間(8)と、
前記圧力空間(8)に接続される圧力ポンプと、
を具備してなることを特徴とする請求項1から請求項7のいずれか一項に記載のデバイス。 - 前記変形手段が少なくとも1つのリミッタ(10)を有し、それが、前記圧力空間(8)の方向への前記底部(7b)の前記変形を、特に前記底部(7b)が前記リミッタ(10)に隣接しているときに前記底部(7b)が平坦であるように制限するように形成されることを特徴とする請求項8に記載のデバイス。
- 前記接触面(5k)の面積が接触表面(4k)の面積よりも小さいことを特徴とする請求項1から請求項9のいずれか一項に記載のデバイス。
- 前記デバイスが加熱手段(14,15)を有することを特徴とする請求項1から請求項10のいずれか一項に記載のデバイス。
- 前記加熱手段(14)が、前記キャリア(2)を保持するための受取ユニット(1)内に一体化されることを特徴とする請求項11に記載のデバイス。
- 前記加熱手段(15)が、前記キャリア(2)を保持するための受取ユニット(1)の下にあることを特徴とする請求項11または請求項12に記載のデバイス。
- 請求項1から請求項13のいずれか一項に記載のデバイスを用いて、ウェーハ(4)をキャリア(2)から分離させるための方法であって、
a)変形可能膜(5)の、その接触面(5k)が前記ウェーハ(4)の接触表面(4k)に平行な状態での位置合せステップと、
b)前記膜(5)と前記ウェーハ(4)との間の接触および前記付着手段による前記ウェーハ(4)の前記膜(5)への付着ステップと、
c)前記変形手段による、前記接触面(5k)の方向への前記膜(5)の凸状に行われる変形および分離ステップと、を具備することを特徴とする方法。 - 前記ウェーハ(4)の分離前の前記キャリア(2)および前記ウェーハ(4)が、前記ウェーハ(4)とキャリア(2)との間にある接続手段(3)を緩ませるために加熱手段(15)により加熱されることを特徴とする請求項14に記載の方法。
- 請求項1から請求項13のいずれか一項に記載のデバイスを用いて、ウェーハ(4)をキャリア(2')に付加するための方法であって、
a)膜(5)と前記ウェーハ(4)との間の接触および付着手段による前記ウェーハ(4)の前記膜(5)への付着ステップと、
b)前記変形可能膜(5)およびそれに付着している前記ウェーハ(4)と、キャリア(2')との位置合せステップと、
c)前記変形手段による前記膜(5)および前記ウェーハ(4)の凸状変形および前記ウェーハ(4)の前記キャリア(2')への付加ステップと、を具備することを特徴とする方法。
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DE102008018536.1A DE102008018536B4 (de) | 2008-04-12 | 2008-04-12 | Vorrichtung und Verfahren zum Aufbringen und/oder Ablösen eines Wafers auf einen/von einem Träger |
DE102008018536.1 | 2008-04-12 |
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US10002118B2 (en) | 2009-12-02 | 2018-06-19 | International Business Machines Corporation | Automated form layout based upon usage patterns |
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JP5421629B2 (ja) | 2014-02-19 |
DE102008018536A1 (de) | 2009-10-15 |
AT506622B1 (de) | 2016-01-15 |
AT506622A2 (de) | 2009-10-15 |
DE102008018536B4 (de) | 2020-08-13 |
US8157615B2 (en) | 2012-04-17 |
AT506622A3 (de) | 2012-11-15 |
US20090258583A1 (en) | 2009-10-15 |
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