JP2009239262A - 複合基板の製造装置及び当該複合基板の製造装置を用いた複合基板の製造方法 - Google Patents
複合基板の製造装置及び当該複合基板の製造装置を用いた複合基板の製造方法 Download PDFInfo
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- JP2009239262A JP2009239262A JP2009039615A JP2009039615A JP2009239262A JP 2009239262 A JP2009239262 A JP 2009239262A JP 2009039615 A JP2009039615 A JP 2009039615A JP 2009039615 A JP2009039615 A JP 2009039615A JP 2009239262 A JP2009239262 A JP 2009239262A
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Abstract
【解決手段】複数の単結晶半導体基板を、対応するトレイに基板表面を鉛直下向きとして配置し、大判支持基板を該基板の表面を鉛直上向きとして配置する。次に単結晶半導体基板をトレイから離間し、単結晶半導体基板の側面を支持しつつ該基板の一部に圧力を加え、単結晶半導体基板と大判支持基板の表面との貼り合わせを行なう。またこのような処理に必要な、単結晶半導体基板の背面を持着し該基板表面を鉛直下向きにして保持し、該基板の側面部を支持するステージと、大判支持基板の表面を鉛直上向きにして持着するステージと、を近接させ、単結晶半導体基板の背面の一部に圧力を加える圧力付加機構とを有する装置を提案する。
【選択図】図2
Description
本実施の形態では、複合基板の製造装置の構成に関して図面を参照して説明する。
本実施の形態では、上記実施の形態1で示した複合基板の製造装置を用いたSOI基板の作製方法の一例に関して図面を参照して説明する。
本実施の形態では、上記実施の形態2で作製したSOI基板を用いて、薄膜トランジスタ(TFT)を作製する方法を説明する。
本実施の形態では、上記実施の形態と異なる薄膜トランジスタの作製方法に関して図面を参照して説明する。本実施の形態に示す薄膜トランジスタの製造方法では、半導体膜と配線との接続に係る開口が自己整合的に形成されることを特徴としている。
本実施の形態では、上記実施の形態で示した薄膜トランジスタを適用した半導体装置の具体的な態様について図面を参照して説明する。
103 加熱ガス供給ユニット
105 第1のステージ
107 第2のステージ
109 第1のカセット室
110 第2のカセット室
111 第1の搬送手段
113 第2の搬送手段
115 第3の搬送手段
119 受け渡しステージ
121 第1の基板
122 第2の基板
123 ステージ格納室
125 温度センサー
127 温度制御ユニット
129 仕切弁
131 搬送室
140 トレイ
204 脆化層
Claims (14)
- 複数枚の第1の基板を、一枚の第2の基板に貼り合わせる複合基板の製造装置であって、
前記第1の基板の背面を持着するトレイと、
前記トレイが複数個配設され、該トレイの前記第1の基板を持着する面を鉛直下向きにして保持し、前記第1の基板の側面部を支持する第1のステージと、
前記第1のステージと対向し、前記第2の基板の表面を鉛直上向きにして、前記第2の基板を持着する第2のステージと、
前記第1の基板と前記第2の基板が近接するように、前記第1のステージと前記第2のステージを移動させるステージ駆動部と、
前記第1の基板と前記第2の基板が近接した状態で、前記第1の基板の背面の一部に圧力を加える圧力付加機構と
を有することを特徴とする複合基板の製造装置。 - 請求項1において、
前記圧力付加機構は前記第1のステージに設けられていることを特徴とする複合基板の製造装置。 - 請求項1または請求項2において、
第1の搬送手段と、
第2の搬送手段と、を有し、
前記第1の搬送手段は、前記第1の基板を前記トレイに搬送する手段を有し、
前記第2の搬送手段は、前記第2の基板を前記第2のステージに搬送する手段を有する
ことを特徴とする複合基板の製造装置。 - 請求項1乃至請求項3のいずれか一において、
前記トレイは回転する手段を有し、前記第1の基板の表面を、鉛直上向きに支持した状態から、反転させ、鉛直下向きに支持する手段を有する
ことを特徴とする複合基板の製造装置。 - 請求項1乃至請求4のいずれか一において、
熱処理手段を有し、
前記熱処理手段は、前記第1の基板と、前記第2の基板とを熱処理する手段を有する
ことを特徴とする複合基板の製造装置。 - 請求項5において、
前記熱処理手段は加熱ガスの対流によるものである
ことを特徴とする複合基板の製造装置。 - 請求項5において、
前記熱処理手段はジュール熱にて加熱される発熱体からの輻射によるものである
ことを特徴とする複合基板の製造装置。 - 請求項1乃至請求項7のいずれか一において、
前記第1の基板表面、あるいは前記第2の基板表面、あるいはその両方を洗浄する手段を有することを特徴とする複合基板の製造装置。 - 複数の第1の基板を、対応するトレイに、前記第1の基板表面を鉛直下向きとして配置し、
第2の基板を第2のステージに、前記第2の基板の表面を鉛直上向きとして配置し、
前記第1の基板を、前記トレイから離間し、前記第1の基板の側面を支持しつつ、前記第1の基板の一部に圧力を加え、前記第1の基板の表面と前記第2の基板の表面との貼り合わせを行なうことを特徴とする複合基板の製造方法。 - 請求項9において、
前記第1の基板を、対応するトレイに、前記第1の基板表面を鉛直上向きとして配置した後に前記トレイを反転させ、
複数の前記第1の基板を、対応するトレイに、前記第1の基板表面を鉛直下向きとして配置することを特徴とする複合基板の製造方法。 - 請求項9または請求10において、
前記第1の基板の表面と前記第2の基板の表面との貼り合わせを行った後、前記第1の基板と前記第2の基板とに熱処理を施すことを特徴とする複合基板の製造方法。 - 請求項11において、
前記熱処理の温度条件は150℃以上450℃以下であること
を特徴とする複合基板の製造方法。 - 請求項12において、
前記第1の基板と前記第2の基板とに熱処理を施した後、
前記第1の基板の側面を支持しつつ、400℃以上750℃以下の温度条件にて熱処理し、
前記第1の基板を前記トレイにて支持し、前記第2の基板より分離することを特徴とする複合基板の製造方法。 - 請求項9乃至請求項13のいずれか一において、
前記第1の基板と前記第2の基板とを貼り合わせる前に、前記第1の基板表面、あるいは前記第2の基板表面、あるいはその両方を洗浄することを特徴とする複合基板の製造方法。
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