JP2009222585A - 光検出器 - Google Patents
光検出器 Download PDFInfo
- Publication number
- JP2009222585A JP2009222585A JP2008068074A JP2008068074A JP2009222585A JP 2009222585 A JP2009222585 A JP 2009222585A JP 2008068074 A JP2008068074 A JP 2008068074A JP 2008068074 A JP2008068074 A JP 2008068074A JP 2009222585 A JP2009222585 A JP 2009222585A
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- JP
- Japan
- Prior art keywords
- substrate
- film
- bolometer
- metal
- metal film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 132
- 239000002184 metal Substances 0.000 claims abstract description 132
- 239000000758 substrate Substances 0.000 claims abstract description 88
- 239000010408 film Substances 0.000 abstract description 136
- 239000010409 thin film Substances 0.000 abstract description 38
- 230000017525 heat dissipation Effects 0.000 abstract description 22
- 230000005855 radiation Effects 0.000 abstract description 3
- 238000005549 size reduction Methods 0.000 abstract description 3
- 230000008859 change Effects 0.000 description 37
- 238000000034 method Methods 0.000 description 25
- 239000010410 layer Substances 0.000 description 24
- 230000008569 process Effects 0.000 description 20
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000007613 environmental effect Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000003475 lamination Methods 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910008332 Si-Ti Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910006749 Si—Ti Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- -1 and for example Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0853—Optical arrangements having infrared absorbers other than the usual absorber layers deposited on infrared detectors like bolometers, wherein the heat propagation between the absorber and the detecting element occurs within a solid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J5/22—Electrical features thereof
- G01J5/24—Use of specially adapted circuits, e.g. bridge circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14669—Infrared imagers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
【解決手段】ボロメータ素子11及びリファレンス素子21を有する赤外線検出器1において、基板10の表面から離間して基板10の表面上に支持されたボロメータ薄膜22と、ボロメータ薄膜22の基板10側の表面に絶縁膜31を介して形成された放熱用金属膜23と、放熱用金属膜23及び基板10と熱的に接続された複数の金属柱25とを備えることで、赤外線により発生した受光部22aの熱が絶縁膜31、放熱用金属膜23、金属柱25、基板側放熱用金属膜24を介して基板10へ効率良く放熱されるので、使用環境の変化によって発生する温度変化のみを正確に測定することができ、使用環境における温度変化の影響を効率良く低減しつつ、小型化を図ることができる。
【選択図】図6
Description
Vout−Vinp=−Ip・t/Cf …(1)
Claims (4)
- 基板の表面から離間して前記基板の表面上に支持された第1ボロメータ膜と、
前記基板の表面から離間して前記基板の表面上に支持された第2ボロメータ膜と、
前記第2ボロメータ膜の前記基板側の表面に絶縁膜を介して形成された第1金属膜と、
前記第1金属膜及び前記基板と熱的に接続された複数の金属柱と、
を備える光検出器。 - 前記基板の表面において前記第2ボロメータ膜と対向する領域には、第2金属膜が形成されており、
前記金属柱は、前記第1金属膜及び前記第2金属膜と接続されていること、
を特徴とする請求項1に記載の光検出器。 - 前記基板の表面において前記第1ボロメータ膜と対向する領域には、第3金属膜が形成されていることを特徴とする請求項1又は2に記載の光検出器。
- 前記第1ボロメータ膜及び前記第2ボロメータ膜は、前記基板の表面と略平行であって略同一の平面上に位置することを特徴とする請求項1〜3の何れか一項に記載の光検出器。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008068074A JP5255873B2 (ja) | 2008-03-17 | 2008-03-17 | 光検出器 |
US12/922,805 US8692348B2 (en) | 2008-03-17 | 2009-03-16 | Photodetector |
KR1020107018149A KR101683257B1 (ko) | 2008-03-17 | 2009-03-16 | 광 검출기 |
PCT/JP2009/055064 WO2009116496A1 (ja) | 2008-03-17 | 2009-03-16 | 光検出器 |
KR1020167033698A KR101708608B1 (ko) | 2008-03-17 | 2009-03-16 | 광 검출기 |
EP09723540.2A EP2261617B1 (en) | 2008-03-17 | 2009-03-16 | Photodetector |
CN200980109704.XA CN101978246B (zh) | 2008-03-17 | 2009-03-16 | 光检测器 |
TW098108637A TWI457547B (zh) | 2008-03-17 | 2009-03-17 | Photodetector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008068074A JP5255873B2 (ja) | 2008-03-17 | 2008-03-17 | 光検出器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009222585A true JP2009222585A (ja) | 2009-10-01 |
JP5255873B2 JP5255873B2 (ja) | 2013-08-07 |
Family
ID=41090897
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008068074A Active JP5255873B2 (ja) | 2008-03-17 | 2008-03-17 | 光検出器 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8692348B2 (ja) |
EP (1) | EP2261617B1 (ja) |
JP (1) | JP5255873B2 (ja) |
KR (2) | KR101683257B1 (ja) |
CN (1) | CN101978246B (ja) |
TW (1) | TWI457547B (ja) |
WO (1) | WO2009116496A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012132845A1 (ja) * | 2011-03-25 | 2012-10-04 | 浜松ホトニクス株式会社 | 赤外線イメージセンサ及び信号読み出し方法 |
JP2015045641A (ja) * | 2013-08-22 | 2015-03-12 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | 向上した熱平衡化を有する補償ボロメータを備えるボロメータ型検出器 |
WO2016020993A1 (ja) * | 2014-08-06 | 2016-02-11 | 株式会社日立製作所 | 赤外線センサおよび信号検出方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5259430B2 (ja) * | 2009-01-06 | 2013-08-07 | 浜松ホトニクス株式会社 | 光検出器 |
KR101922119B1 (ko) | 2011-12-22 | 2019-02-14 | 삼성전자주식회사 | 적외선 검출기 및 이를 사용하는 적외선 검출 방법 |
US9297700B2 (en) * | 2012-12-03 | 2016-03-29 | Analog Devices, Inc. | Photonic sensor and a method of manufacturing such a sensor |
JP2016151523A (ja) * | 2015-02-18 | 2016-08-22 | 浜松ホトニクス株式会社 | 赤外線検出装置 |
FR3048125B1 (fr) | 2016-02-24 | 2020-06-05 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif de detection de rayonnement electromagnetique a plot de connexion electrique sureleve |
RU2725249C1 (ru) * | 2019-11-28 | 2020-06-30 | Публичное акционерное общество "Газпром" | Ингибированная грунтовка |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04274346A (ja) * | 1991-02-28 | 1992-09-30 | Mitsubishi Electric Corp | 半導体装置 |
JPH10185681A (ja) * | 1996-11-08 | 1998-07-14 | Mitsuteru Kimura | 熱型赤外線センサとその製造方法およびこれを用いた赤外線イメージセンサ |
JPH10209418A (ja) * | 1997-01-27 | 1998-08-07 | Mitsubishi Electric Corp | 赤外線固体撮像素子 |
JP2001099705A (ja) * | 1999-07-26 | 2001-04-13 | Nec Corp | 熱分離構造を有する熱型赤外線検出器 |
JP2002533668A (ja) * | 1998-12-18 | 2002-10-08 | デーウー・エレクトロニクス・カンパニー・リミテッド | 構造的に安定した赤外線ボロメーター |
JP2005043381A (ja) * | 2004-10-18 | 2005-02-17 | Nec Corp | 熱型赤外線検出器およびその製造方法 |
JP2008022315A (ja) * | 2006-07-13 | 2008-01-31 | Mitsubishi Electric Corp | 熱型赤外線検出回路 |
JP2008219613A (ja) * | 2007-03-06 | 2008-09-18 | Mitsubishi Electric Corp | 非冷却赤外線カメラ |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH06326367A (ja) * | 1993-05-13 | 1994-11-25 | Fujitsu Ltd | 赤外線検知器及びその製造方法 |
JP2655101B2 (ja) | 1994-10-28 | 1997-09-17 | 日本電気株式会社 | 赤外線センサ |
JPH10227689A (ja) | 1997-02-17 | 1998-08-25 | Mitsubishi Electric Corp | 赤外線検出器および赤外線フォーカルプレーンアレイ |
CN1177204C (zh) * | 1998-12-18 | 2004-11-24 | 株式会社大宇电子 | 结构稳定的红外线辐射热测量器 |
JP2001041818A (ja) | 1999-07-27 | 2001-02-16 | Sharp Corp | ボロメータ型赤外線検知素子およびそれを用いる赤外線イメージセンサ |
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JP2002107224A (ja) * | 2000-09-29 | 2002-04-10 | Toshiba Corp | 赤外線センサ及びその製造方法 |
JP4135857B2 (ja) * | 2001-03-27 | 2008-08-20 | 独立行政法人産業技術総合研究所 | 赤外線センサの製造方法 |
WO2006108210A1 (en) * | 2005-02-25 | 2006-10-19 | Kevin Liddiard | Microbolometer infrared security sensor |
ATE458186T1 (de) * | 2005-05-12 | 2010-03-15 | Commissariat Energie Atomique | Thermischer detektor für elektromagnetische strahlung in einer die detektoren verwendenden infrarot-detektionseinrichtung |
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US20080135758A1 (en) * | 2006-12-06 | 2008-06-12 | Electronics And Telecommunications Research Institute | Bolometer and method of manufacturing the same |
KR100925214B1 (ko) | 2007-11-29 | 2009-11-06 | 한국전자통신연구원 | 볼로미터 및 그 제조 방법 |
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-
2008
- 2008-03-17 JP JP2008068074A patent/JP5255873B2/ja active Active
-
2009
- 2009-03-16 CN CN200980109704.XA patent/CN101978246B/zh active Active
- 2009-03-16 EP EP09723540.2A patent/EP2261617B1/en active Active
- 2009-03-16 WO PCT/JP2009/055064 patent/WO2009116496A1/ja active Application Filing
- 2009-03-16 KR KR1020107018149A patent/KR101683257B1/ko active IP Right Grant
- 2009-03-16 US US12/922,805 patent/US8692348B2/en active Active
- 2009-03-16 KR KR1020167033698A patent/KR101708608B1/ko active IP Right Grant
- 2009-03-17 TW TW098108637A patent/TWI457547B/zh not_active IP Right Cessation
Patent Citations (8)
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JPH04274346A (ja) * | 1991-02-28 | 1992-09-30 | Mitsubishi Electric Corp | 半導体装置 |
JPH10185681A (ja) * | 1996-11-08 | 1998-07-14 | Mitsuteru Kimura | 熱型赤外線センサとその製造方法およびこれを用いた赤外線イメージセンサ |
JPH10209418A (ja) * | 1997-01-27 | 1998-08-07 | Mitsubishi Electric Corp | 赤外線固体撮像素子 |
JP2002533668A (ja) * | 1998-12-18 | 2002-10-08 | デーウー・エレクトロニクス・カンパニー・リミテッド | 構造的に安定した赤外線ボロメーター |
JP2001099705A (ja) * | 1999-07-26 | 2001-04-13 | Nec Corp | 熱分離構造を有する熱型赤外線検出器 |
JP2005043381A (ja) * | 2004-10-18 | 2005-02-17 | Nec Corp | 熱型赤外線検出器およびその製造方法 |
JP2008022315A (ja) * | 2006-07-13 | 2008-01-31 | Mitsubishi Electric Corp | 熱型赤外線検出回路 |
JP2008219613A (ja) * | 2007-03-06 | 2008-09-18 | Mitsubishi Electric Corp | 非冷却赤外線カメラ |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012132845A1 (ja) * | 2011-03-25 | 2012-10-04 | 浜松ホトニクス株式会社 | 赤外線イメージセンサ及び信号読み出し方法 |
JP2012202832A (ja) * | 2011-03-25 | 2012-10-22 | Hamamatsu Photonics Kk | 赤外線イメージセンサ及び信号読み出し方法 |
US9253418B2 (en) | 2011-03-25 | 2016-02-02 | Hamamatsu Photonics K.K. | Infrared image sensor and signal read method |
JP2015045641A (ja) * | 2013-08-22 | 2015-03-12 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | 向上した熱平衡化を有する補償ボロメータを備えるボロメータ型検出器 |
WO2016020993A1 (ja) * | 2014-08-06 | 2016-02-11 | 株式会社日立製作所 | 赤外線センサおよび信号検出方法 |
Also Published As
Publication number | Publication date |
---|---|
US8692348B2 (en) | 2014-04-08 |
US20110024855A1 (en) | 2011-02-03 |
EP2261617A4 (en) | 2012-05-02 |
TW201005270A (en) | 2010-02-01 |
CN101978246B (zh) | 2014-07-09 |
TWI457547B (zh) | 2014-10-21 |
KR20160143876A (ko) | 2016-12-14 |
EP2261617B1 (en) | 2014-07-16 |
EP2261617A1 (en) | 2010-12-15 |
KR101708608B1 (ko) | 2017-02-20 |
CN101978246A (zh) | 2011-02-16 |
WO2009116496A1 (ja) | 2009-09-24 |
KR20100133363A (ko) | 2010-12-21 |
JP5255873B2 (ja) | 2013-08-07 |
KR101683257B1 (ko) | 2016-12-06 |
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