CN1177204C - 结构稳定的红外线辐射热测量器 - Google Patents
结构稳定的红外线辐射热测量器Info
- Publication number
- CN1177204C CN1177204C CNB988143631A CN98814363A CN1177204C CN 1177204 C CN1177204 C CN 1177204C CN B988143631 A CNB988143631 A CN B988143631A CN 98814363 A CN98814363 A CN 98814363A CN 1177204 C CN1177204 C CN 1177204C
- Authority
- CN
- China
- Prior art keywords
- mentioned
- level
- bolometer
- absorber
- bridge circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010521 absorption reaction Methods 0.000 claims abstract description 40
- 239000011159 matrix material Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000006096 absorbing agent Substances 0.000 claims description 35
- 239000004020 conductor Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 abstract 2
- 238000004873 anchoring Methods 0.000 abstract 1
- 239000011247 coating layer Substances 0.000 abstract 1
- 230000008030 elimination Effects 0.000 abstract 1
- 238000003379 elimination reaction Methods 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 230000036244 malformation Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/KR1998/000446 WO2000037907A1 (en) | 1998-12-18 | 1998-12-18 | Structurally stable infrared bolometer |
US09/217,884 US6242738B1 (en) | 1998-12-18 | 1998-12-22 | Structurally stable infrared bolometer |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1349607A CN1349607A (zh) | 2002-05-15 |
CN1177204C true CN1177204C (zh) | 2004-11-24 |
Family
ID=26633378
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB988143631A Expired - Fee Related CN1177204C (zh) | 1998-12-18 | 1998-12-18 | 结构稳定的红外线辐射热测量器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6242738B1 (zh) |
CN (1) | CN1177204C (zh) |
WO (1) | WO2000037907A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6667479B2 (en) * | 2001-06-01 | 2003-12-23 | Raytheon Company | Advanced high speed, multi-level uncooled bolometer and method for fabricating same |
JP5255873B2 (ja) * | 2008-03-17 | 2013-08-07 | 浜松ホトニクス株式会社 | 光検出器 |
JP5259430B2 (ja) | 2009-01-06 | 2013-08-07 | 浜松ホトニクス株式会社 | 光検出器 |
US9257587B2 (en) * | 2012-12-21 | 2016-02-09 | Robert Bosch Gmbh | Suspension and absorber structure for bolometer |
US9851256B2 (en) | 2014-06-26 | 2017-12-26 | MP High Tech Solutions Pty Ltd | Apparatus and method for electromagnetic radiation sensing |
US9810581B1 (en) | 2014-07-28 | 2017-11-07 | MP High Tech Solutions Pty Ltd | Micromechanical device for electromagnetic radiation sensing |
US9528881B1 (en) * | 2016-05-18 | 2016-12-27 | Nxp Usa, Inc. | Stress isolated detector element and microbolometer detector incorporating same |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03115583A (ja) * | 1989-09-27 | 1991-05-16 | Anritsu Corp | 光吸収体及びその製造方法 |
JPH07128139A (ja) * | 1993-10-29 | 1995-05-19 | Matsushita Electric Works Ltd | 赤外線検出素子 |
US5399897A (en) * | 1993-11-29 | 1995-03-21 | Raytheon Company | Microstructure and method of making such structure |
US5841137A (en) * | 1995-08-11 | 1998-11-24 | Texas Instruments Incorporated | Duplicative detector sensor |
JPH10122950A (ja) * | 1996-10-23 | 1998-05-15 | Tech Res & Dev Inst Of Japan Def Agency | 熱型赤外線検出器及びその製造方法 |
JPH11148861A (ja) * | 1997-09-09 | 1999-06-02 | Honda Motor Co Ltd | マイクロブリッジ構造 |
-
1998
- 1998-12-18 CN CNB988143631A patent/CN1177204C/zh not_active Expired - Fee Related
- 1998-12-18 WO PCT/KR1998/000446 patent/WO2000037907A1/en active IP Right Grant
- 1998-12-22 US US09/217,884 patent/US6242738B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO2000037907A1 (en) | 2000-06-29 |
US6242738B1 (en) | 2001-06-05 |
CN1349607A (zh) | 2002-05-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20030814 Address after: Seoul Applicant after: Daewoo Electronics Co., Ltd. Address before: Seoul Applicant before: Daewoo Electronics Co., Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: FENGYE VISION TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: DAEWOO ELECTRONICS CO., LTD. Effective date: 20130422 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130422 Address after: Ontario Patentee after: Fengye Vision Technology Co., Ltd. Address before: Seoul, South Kerean Patentee before: Daewoo Electronics Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20041124 Termination date: 20141218 |
|
EXPY | Termination of patent right or utility model |