WO2000033032A1 - Infrared bolometer with an enhanced structural stability and integrity - Google Patents

Infrared bolometer with an enhanced structural stability and integrity Download PDF

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Publication number
WO2000033032A1
WO2000033032A1 PCT/KR1998/000390 KR9800390W WO0033032A1 WO 2000033032 A1 WO2000033032 A1 WO 2000033032A1 KR 9800390 W KR9800390 W KR 9800390W WO 0033032 A1 WO0033032 A1 WO 0033032A1
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WO
WIPO (PCT)
Prior art keywords
bolometer
absorber
level
bridge
pair
Prior art date
Application number
PCT/KR1998/000390
Other languages
French (fr)
Inventor
Sang Baek Ju
Hee-Soo Kim
Original Assignee
Daewoo Electronics Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daewoo Electronics Co., Ltd. filed Critical Daewoo Electronics Co., Ltd.
Priority to PCT/KR1998/000390 priority Critical patent/WO2000033032A1/en
Publication of WO2000033032A1 publication Critical patent/WO2000033032A1/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices

Definitions

  • the present invention relates to an infra-red bolometer; and, more particularly, to the infra-red bolometer having an enhanced structural stability and integrity.
  • a radiation detector is a device that produces an output signal which is a function of the amount of radiation that is incident upon an active region of the detector.
  • Infra-red detectors are those detectors which are sensitive to radiation in the infra-red region of the electromagnetic spectrum.
  • thermal detectors including bolometers and photon detectors.
  • the photon detectors function based upon the number of photons that are incident upon and interact with electrons in a transducer region of the detector.
  • the photon detectors since they function based on direct interactions between electrons and photons, are highly sensitive and have a high response speed compared to the bolometers. However, they have a shortcoming in that the photon detectors operate well only at low temperatures necessitating a need to an incorperate therein an additional cooling system.
  • the bolometers function, on the other hand, based upon a change in the temperature of the transducer region of the detector due to absorption of the radiation.
  • the bolometers provide an output signal, i.e., a change in the resistance of materials (called bolometer elements) , that is proportional to the temperature of the transducer region.
  • the bolometer elements have been made from both metals and semiconductors. In metals, the resistance change is essentially due to variations in the carrier mobility, which typically decreases with temperature. Greater sensitivity can be obtained in high-resistivity semiconductor bolometer elements in which the free- carrier density is an exponential function of temperature.
  • Fig. 1 provides a perspective view illustrating a three-level bolometer 100, disclosed in U.S. Ser. Application No. 09/120,364 entitled "BOLOMETER HAVING AN INCREASED FILL FACTOR" and Fig. 2 presents a schematic cross sectional view depicting the three- level bolometer 100 taken along A - A in Fig. 1.
  • the bolometer 100 comprises an active matrix level 10, a support level 20, at least a pair of posts 40 and an absorption level 30.
  • the active matrix level 10 has a substrate 12 including an integrated circuit (not shown) , a pair of connecting terminals 14 and a protective layer 16.
  • Each of the connecting terminals 14 made of a metal is located on top of the substrate 12.
  • the protective layer 16 made of, e.g., silicon nitride (SiN ) , covers the substrate 12.
  • the pair of connecting terminals 14 are electrically connected to the integrated circuit.
  • the support level 20 includes a pair of bridges 22 made of silicon nitride (SiN ⁇ ) , each of the bridges 22 having a conduction line 24 formed on top thereof.
  • Each of the bridges 22 is provided with an anchor portion 22a, a leg portion 22b and an elevated portion 22c, wherein the anchor portion 22a is fixed on top of the active matrix level 10 and includes a via hole 26 through which one end of the conduction line 24 is electrically connected to the connecting terminal 14 and the leg portion 22b supports the elevated portion 22c.
  • the absorption level 30 is provided with a bolometer element 34 surrounded by an absorber 32 and an IR absorber coating 36 formed on top of the absorber 32.
  • the absorber 32 is fabricated by depositing silicon nitride before and after the formation of the bolometer element 34 to surround the bolometer element 34.
  • the bolometer element 34 is made of a serpentine shape to lengthen thereof by which the bolometer element 34 obtains a high resistivity.
  • Each of the posts 40 is placed between the absorption level 30 and the support level 20.
  • Each of the posts 40 includes an electrical conduit 42 made of a metal, e.g., titanium (Ti) , and surrounded by an insulating material 44 made of, e.g., silicon nitride (SiN ) .
  • Top end of the electrical conduit 42 is electrically connected to one end of the serpentine bolometer element 34 and bottom end of the electrical conduit 42 is electrically connected to the conduction line 24 on the bridge 22, in such a way that both ends of the serpentine bolometer element 34 in the absorption level 30 is electrically connected to the integrated circuit of the active matrix level 10 through the electrical conduits 42, the conduction lines 24 and the connecting terminals 14.
  • the resistivity of the serpentine bolometer element 34 increases, causing a current and a voltage to vary, accordingly.
  • the varied current or voltage is amplified by the integrated circuit in such a way that the amplified current or voltage is read out by a detective circuit (not shown) .
  • One of the major shortcomings of the above- described bolometer 100 is a structural instability caused by the stress accumulated therein during the forming thereof and the manners in which they are relieved. For example, since one end portion of the bridge 22, i.e., the anchor portion 22a, is fixed on top of the active matrix level 10, the stresses accumulated therein can be only relieved through the other end portion, i.e., the elevated portion 22c, causing the bridge 22 to be structurally distorted and the absorber 32 to get twisted, thereby structurally deforming the bolometer 100.
  • the absorber 32 having a square shape is attached to the posts 40 at two opposite corner portions thereof, resulting in the stresses being concentrated thereabove, causing the remaining corner portions thereof to bend downward, again detrimentally affecting to the structural integrity of the bolometer 100.
  • an infrared bolometer which comprises: an active matrix level including a substrate and a pair of connecting terminals,- a support level provided with a bridge and a pair of conduction lines, ends of the bridge being fixed to the active matrix level; an absorption level including a bolometer element surrounded by an absorber; and a pair of posts being positioned between the absorption level and the support level, each of the posts including an electrical conduit, wherein top end of each of the posts is attached to a bottom portion of the absorber around its center and bottom end is attached to the bridge, both ends of the bolometer element being electrically connected to the respective connecting terminal through the respective conduit and the respective conduction line.
  • Fig. 1 provides a perspective view setting forth an infrared bolometer previous disclosed
  • Fig. 2 presents a schematic cross sectional view depicting the infrared bolometer taken along A - A in Fig. 1;
  • Fig. 3 provides a perspective view setting forth an infrared bolometer in accordance with the present invention
  • Fig. 4 presents a schematic cross sectional view depicting the infrared bolometer taken along B - B in Fig. 3; and Fig. 5 shows a transparent top view illustrating a bolometer element of an absorption level in the infrared bolometer in accordance with one embodiment of the present invention.
  • the inventive infrared bolometer 200 shown in Figs. 3 and 4 comprises an active matrix level 110, a support level 120, a pair of posts 140 and an absorption level 130.
  • the active matrix level 110 has a substrate 112 including an integrated circuit (not shown) , a pair of connecting terminals 114 and a protective layer 116.
  • Each of the connecting terminals 114 made of a metal is located on top of the substrate 112 and is electrically connected to the integrated circuit.
  • the protective layer 116 made of, e.g., silicon nitride (SiN) covers the substrate 112.
  • the support level 120 includes a bridge 122 made of an insulating material, e.g. , silicon nitride (SiN ) , silicon oxide (Si0 2 ) or silicon oxy-nitride (SiO ⁇ N ) , and a pair of conduction lines 124 made of an electrically conducting material , e.g., Ti .
  • the bridge 122 is provided with a pair of anchor portions 122a, a pair of leg portions 122b and an elevated portion 122c.
  • Each of the anchor portions 122a is fixed to the active matrix level 110 and includes a via hole 126 through which one end of each of the conduction lines 124 is electrically connected to each of the connecting terminals 114 in the active matrix level 110, each of the leg portions 122b supports the elevated portion 122c on which the other end of each of the conduction lines 124 is electrically disconnected from each other. Additionally, the elevated portion 122c is formed to have a serpentine shape to minimize the thermal exchange between the active matrix level 110 and the absorption level 130.
  • the absorption level 130 is provided with a bolometer element 136 surrounded by an absorber 132, an reflective layer 134 formed at bottom of the absorber 132 and an IR absorber coating 138 positioned on top of the absorber 132.
  • the absorber 132 is made of an insulating material having a low heat-conductivity, e.g., silicon nitride (SiN ⁇ ) , silicon oxide (SiO ) or silicon oxy-nitride (SiON ) .
  • the reflective layer 134 is made of a metal, e.g., Al or Pt, and is used for returning the transmitted IR back to the square absorber 132.
  • the IR absorber coating 138 is made of, e.g., black gold, and is used for enhancing an absorption efficiency.
  • the bolometer element 136 in the present invention is made of a material having a positive temperature coefficient of resistance (TCR) , e.g., titanium.
  • TCR positive temperature coefficient of resistance
  • a material having a negative temperature coefficient of resistance e.g., ZnO
  • the bolometer element 136 is made as long as possible by making it into a serpentine shape which is diagonally symmetric with respect to its center point, as shown in Fig. 5 which is drawn as though the absorber coating 138 and square absorber 132 are transparent so that the bolometer element 136 can be shown, in accordance with the one embodiment of the present invention.
  • each of the posts 140 is placed between the absorption level 130 and the support level 120, wherein a top portion of each of the posts 140 is attached to the center portion of the absorber 132 and a bottom portion is attached to the elevated portion 122c of the bridge 122.
  • Each of the post 140 includes an electrical conduit 142 made of a metal, e.g., titanium (Ti) , and surrounded by an insulating material 144 made of, e.g., silicon nitride (SiN ) , silicon oxide (SiO ⁇ ) or silicon oxy-nitride (SiO ⁇ N ) .
  • Top end of the electrical conduit 142 is electrically connected to one end of the bolometer element 136 and bottom end of the electrical conduit 142 is electrically connected to the respective conduction line 124 of the supporting level 120, in such a way that both ends of the bolometer element 136 in the absorption level 130 is electrically connected to the integrated circuit of the active matrix level 110 through the electrical conduits 142, the conduction lines 124 and the connecting terminals 114.
  • the resistivity of the bolometer element 136 changes, causing a current and a voltage to vary, accordingly.
  • the varied current or voltage is amplified by the integrated circuit, in such a way that the amplified current or voltage is read out by detective circuit
  • each end portion of the bridge 122 is fixed to the active matrix level 110 and each of the posts 140 is attached to the center portion of the absorber 132, causing the stresses to be evenly relieved, resulting in enhancing of the structural stability and integrity of the bolometer 200.
  • the bolometer element 136 can be lengthened sufficiently with, as shown in Fig. 5, enhancing the sensitivity of the bolometer 200.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

An inventive infra-red bolometer (200) comprises an active matrix level (110), a support level (120), a pair of posts (140) and an absorption level (130). The active matrix level includes a substrate having an integrated circuit, a pair of connecting terminals (114) and a protective layer (116). The support level (120) includes a bridge (122) and a pair of conduction lines (124) formed on top of the bridge (122), wherein the bridge includes a pair of anchor portions (122a), a pair of leg portions (122b) and an elevated portion (122c). The absorption level (130) includes a bolometer element (136) surrounded by an absorber (132), a reflective layer (134) located at bottom of the absorber and an IR absorber coating (138) placed on top of the absorber. Each of the posts (140) is placed between the absorption level (130) and the support level (120), wherein a top portion of each of the posts (140) is attached to the center portion of the absorber (132) and a bottom portion is attached to the elevated portion (122c) of the bridge (122).

Description

INFRARED BOLOMETER WITH AN ENHANCED STRUCTURAL STABILITY AND INTEGRITY
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an infra-red bolometer; and, more particularly, to the infra-red bolometer having an enhanced structural stability and integrity.
BACKGROUND ART
A radiation detector is a device that produces an output signal which is a function of the amount of radiation that is incident upon an active region of the detector. Infra-red detectors are those detectors which are sensitive to radiation in the infra-red region of the electromagnetic spectrum. There are two types of infra-red detectors, thermal detectors including bolometers and photon detectors.
The photon detectors function based upon the number of photons that are incident upon and interact with electrons in a transducer region of the detector. The photon detectors, since they function based on direct interactions between electrons and photons, are highly sensitive and have a high response speed compared to the bolometers. However, they have a shortcoming in that the photon detectors operate well only at low temperatures necessitating a need to an incorperate therein an additional cooling system.
The bolometers function, on the other hand, based upon a change in the temperature of the transducer region of the detector due to absorption of the radiation. The bolometers provide an output signal, i.e., a change in the resistance of materials (called bolometer elements) , that is proportional to the temperature of the transducer region. The bolometer elements have been made from both metals and semiconductors. In metals, the resistance change is essentially due to variations in the carrier mobility, which typically decreases with temperature. Greater sensitivity can be obtained in high-resistivity semiconductor bolometer elements in which the free- carrier density is an exponential function of temperature.
Fig. 1 provides a perspective view illustrating a three-level bolometer 100, disclosed in U.S. Ser. Application No. 09/120,364 entitled "BOLOMETER HAVING AN INCREASED FILL FACTOR" and Fig. 2 presents a schematic cross sectional view depicting the three- level bolometer 100 taken along A - A in Fig. 1. The bolometer 100 comprises an active matrix level 10, a support level 20, at least a pair of posts 40 and an absorption level 30. The active matrix level 10 has a substrate 12 including an integrated circuit (not shown) , a pair of connecting terminals 14 and a protective layer 16. Each of the connecting terminals 14 made of a metal is located on top of the substrate 12. The protective layer 16 made of, e.g., silicon nitride (SiN ) , covers the substrate 12. The pair of connecting terminals 14 are electrically connected to the integrated circuit.
The support level 20 includes a pair of bridges 22 made of silicon nitride (SiNχ) , each of the bridges 22 having a conduction line 24 formed on top thereof. Each of the bridges 22 is provided with an anchor portion 22a, a leg portion 22b and an elevated portion 22c, wherein the anchor portion 22a is fixed on top of the active matrix level 10 and includes a via hole 26 through which one end of the conduction line 24 is electrically connected to the connecting terminal 14 and the leg portion 22b supports the elevated portion 22c.
The absorption level 30 is provided with a bolometer element 34 surrounded by an absorber 32 and an IR absorber coating 36 formed on top of the absorber 32. The absorber 32 is fabricated by depositing silicon nitride before and after the formation of the bolometer element 34 to surround the bolometer element 34. The bolometer element 34 is made of a serpentine shape to lengthen thereof by which the bolometer element 34 obtains a high resistivity.
Each of the posts 40 is placed between the absorption level 30 and the support level 20. Each of the posts 40 includes an electrical conduit 42 made of a metal, e.g., titanium (Ti) , and surrounded by an insulating material 44 made of, e.g., silicon nitride (SiN ) . Top end of the electrical conduit 42 is electrically connected to one end of the serpentine bolometer element 34 and bottom end of the electrical conduit 42 is electrically connected to the conduction line 24 on the bridge 22, in such a way that both ends of the serpentine bolometer element 34 in the absorption level 30 is electrically connected to the integrated circuit of the active matrix level 10 through the electrical conduits 42, the conduction lines 24 and the connecting terminals 14. When exposed to infra-red radiation, the resistivity of the serpentine bolometer element 34 increases, causing a current and a voltage to vary, accordingly. The varied current or voltage is amplified by the integrated circuit in such a way that the amplified current or voltage is read out by a detective circuit (not shown) .
One of the major shortcomings of the above- described bolometer 100 is a structural instability caused by the stress accumulated therein during the forming thereof and the manners in which they are relieved. For example, since one end portion of the bridge 22, i.e., the anchor portion 22a, is fixed on top of the active matrix level 10, the stresses accumulated therein can be only relieved through the other end portion, i.e., the elevated portion 22c, causing the bridge 22 to be structurally distorted and the absorber 32 to get twisted, thereby structurally deforming the bolometer 100.
Furthermore, the absorber 32 having a square shape is attached to the posts 40 at two opposite corner portions thereof, resulting in the stresses being concentrated thereabove, causing the remaining corner portions thereof to bend downward, again detrimentally affecting to the structural integrity of the bolometer 100.
DISCLOSURE OF THE INVENTION
It is, therefore, a primary object of the present invention to provide an infrared bolometer having an enhanced structural stability and integrity.
In accordance with one aspect of the present invention, there is provided an infrared bolometer, which comprises: an active matrix level including a substrate and a pair of connecting terminals,- a support level provided with a bridge and a pair of conduction lines, ends of the bridge being fixed to the active matrix level; an absorption level including a bolometer element surrounded by an absorber; and a pair of posts being positioned between the absorption level and the support level, each of the posts including an electrical conduit, wherein top end of each of the posts is attached to a bottom portion of the absorber around its center and bottom end is attached to the bridge, both ends of the bolometer element being electrically connected to the respective connecting terminal through the respective conduit and the respective conduction line.
BRIEF DESCRIPTION OF THE DRAWINGS
The above and other objects and features of the present invention will become apparent from the following description of the preferred embodiments given in conjunction with the accompanying drawings, wherein:
Fig. 1 provides a perspective view setting forth an infrared bolometer previous disclosed;
Fig. 2 presents a schematic cross sectional view depicting the infrared bolometer taken along A - A in Fig. 1;
Fig. 3 provides a perspective view setting forth an infrared bolometer in accordance with the present invention;
Fig. 4 presents a schematic cross sectional view depicting the infrared bolometer taken along B - B in Fig. 3; and Fig. 5 shows a transparent top view illustrating a bolometer element of an absorption level in the infrared bolometer in accordance with one embodiment of the present invention.
MODES OF CARRYING OUT THE INVENTION
There are provided in Figs . 3 , 4 and 5 a perspective view setting forth an infrared bolometer
200, a schematic cross sectional view depicting the above infrared bolometer 200 and a transparent top view illustrating a bolometer element 136 of an absorber 132 in the infrared bolometer 200 in accordance with the present invention, respectively. It should be noted that like parts appearing in Figs. 3, 4 and 5 are represented by like reference numerals.
The inventive infrared bolometer 200 shown in Figs. 3 and 4 comprises an active matrix level 110, a support level 120, a pair of posts 140 and an absorption level 130. The active matrix level 110 has a substrate 112 including an integrated circuit (not shown) , a pair of connecting terminals 114 and a protective layer 116. Each of the connecting terminals 114 made of a metal is located on top of the substrate 112 and is electrically connected to the integrated circuit. The protective layer 116 made of, e.g., silicon nitride (SiN) covers the substrate 112.
The support level 120 includes a bridge 122 made of an insulating material, e.g. , silicon nitride (SiN ) , silicon oxide (Si02) or silicon oxy-nitride (SiOχN ) , and a pair of conduction lines 124 made of an electrically conducting material , e.g., Ti . The bridge 122 is provided with a pair of anchor portions 122a, a pair of leg portions 122b and an elevated portion 122c. Each of the anchor portions 122a is fixed to the active matrix level 110 and includes a via hole 126 through which one end of each of the conduction lines 124 is electrically connected to each of the connecting terminals 114 in the active matrix level 110, each of the leg portions 122b supports the elevated portion 122c on which the other end of each of the conduction lines 124 is electrically disconnected from each other. Additionally, the elevated portion 122c is formed to have a serpentine shape to minimize the thermal exchange between the active matrix level 110 and the absorption level 130.
The absorption level 130 is provided with a bolometer element 136 surrounded by an absorber 132, an reflective layer 134 formed at bottom of the absorber 132 and an IR absorber coating 138 positioned on top of the absorber 132. The absorber 132 is made of an insulating material having a low heat-conductivity, e.g., silicon nitride (SiNχ) , silicon oxide (SiO ) or silicon oxy-nitride (SiON ) . The reflective layer 134 is made of a metal, e.g., Al or Pt, and is used for returning the transmitted IR back to the square absorber 132. The IR absorber coating 138 is made of, e.g., black gold, and is used for enhancing an absorption efficiency. The bolometer element 136 in the present invention is made of a material having a positive temperature coefficient of resistance (TCR) , e.g., titanium. Please note that a material having a negative temperature coefficient of resistance, e.g., ZnO, can also be used as the bolometer element 136. Additionally, to obtain a greater sensitivity, the bolometer element 136 is made as long as possible by making it into a serpentine shape which is diagonally symmetric with respect to its center point, as shown in Fig. 5 which is drawn as though the absorber coating 138 and square absorber 132 are transparent so that the bolometer element 136 can be shown, in accordance with the one embodiment of the present invention.
Returning to Figs. 3 and 4, each of the posts 140 is placed between the absorption level 130 and the support level 120, wherein a top portion of each of the posts 140 is attached to the center portion of the absorber 132 and a bottom portion is attached to the elevated portion 122c of the bridge 122. Each of the post 140 includes an electrical conduit 142 made of a metal, e.g., titanium (Ti) , and surrounded by an insulating material 144 made of, e.g., silicon nitride (SiN ) , silicon oxide (SiOχ) or silicon oxy-nitride (SiOχN ) . Top end of the electrical conduit 142 is electrically connected to one end of the bolometer element 136 and bottom end of the electrical conduit 142 is electrically connected to the respective conduction line 124 of the supporting level 120, in such a way that both ends of the bolometer element 136 in the absorption level 130 is electrically connected to the integrated circuit of the active matrix level 110 through the electrical conduits 142, the conduction lines 124 and the connecting terminals 114.
When exposed to infrared radiation, the resistivity of the bolometer element 136 changes, causing a current and a voltage to vary, accordingly.
The varied current or voltage is amplified by the integrated circuit, in such a way that the amplified current or voltage is read out by detective circuit
(not shown) . In comparison with the bolometer 100 previous described, each end portion of the bridge 122 is fixed to the active matrix level 110 and each of the posts 140 is attached to the center portion of the absorber 132, causing the stresses to be evenly relieved, resulting in enhancing of the structural stability and integrity of the bolometer 200. Additionally, as a result of the above described structural change, the bolometer element 136 can be lengthened sufficiently with, as shown in Fig. 5, enhancing the sensitivity of the bolometer 200.
While the present invention has been described with respect to certain preferred embodiments only, other modifications and variations may be made without departing from the scope of the present invention as set forth in the following claims.

Claims

What is claimed is:
1. A infra-red bolometer comprising: an active matrix level including a substrate and a pair of connecting terminals; a support level provided with a bridge and a pair of conduction lines, ends of the bridge being fixed to the active matrix level; an absorption level including a bolometer element surrounded by an absorber; and a pair of posts being positioned between the absorption level and the support level, each of the posts including an electrical conduit, wherein top end of each of the posts is attached to a bottom portion of the absorber around its center and bottom end is attached to the bridge, both ends of the bolometer element being electrically connected to the respective connecting terminal through the respective conduit and the respective conduction line.
2. The bolometer of claim 1, wherein the bridge includes a pair of anchor portions, a pair of leg portions and an elevated portion.
3. The bolometer of claim 2, wherein each of the anchor portions is fixed to the active matrix level .
4. The bolometer of claim 2 , wherein each of the anchor portion includes a via hole through which one end of each of the conduction lines is electrically connected to the connecting terminal and other end of each of the conduction lines is disconnected to each other in the elevated portion of the bridge.
5. The bolometer of claim 2, wherein the elevated portion of the bridge has a serpentine shape.
6. The bolometer of claim 1, wherein top end of each of the posts is attached to the center portion of absorber and bottom end is attached to the elevated portion of the bridge.
7. The bolometer of claim 1, wherein the bolometer element has a serpentine shape which is diagonally symmetric with respect to its center.
8. The bolometer of claim 1 further comprises a protective layer covering the active matrix level .
9. The bolometer of claim 1 further comprises a reflective layer placed at bottom of the absorber.
10. The bolometer of claim 1 further comprise an IR absorber coating located on top of the absorber.
PCT/KR1998/000390 1998-12-01 1998-12-01 Infrared bolometer with an enhanced structural stability and integrity WO2000033032A1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101927976B (en) * 2009-09-30 2013-09-25 浙江大立科技股份有限公司 Infrared detector with micro-bridge structure and manufacturing method thereof
CN105424199A (en) * 2015-12-31 2016-03-23 上海集成电路研发中心有限公司 Differential-output infrared detector unit structure and manufacturing method

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Publication number Priority date Publication date Assignee Title
JPH03115583A (en) * 1989-09-27 1991-05-16 Anritsu Corp Light absorber and production thereof
JPH07128139A (en) * 1993-10-29 1995-05-19 Matsushita Electric Works Ltd Infrared detector
JPH10122950A (en) * 1996-10-23 1998-05-15 Tech Res & Dev Inst Of Japan Def Agency Thermal type infrared radiation detector and its manufacture

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03115583A (en) * 1989-09-27 1991-05-16 Anritsu Corp Light absorber and production thereof
JPH07128139A (en) * 1993-10-29 1995-05-19 Matsushita Electric Works Ltd Infrared detector
JPH10122950A (en) * 1996-10-23 1998-05-15 Tech Res & Dev Inst Of Japan Def Agency Thermal type infrared radiation detector and its manufacture

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN *
PATENT ABSTRACTS OF JAPAN vol. 15, no. 313 (C - 857) *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101927976B (en) * 2009-09-30 2013-09-25 浙江大立科技股份有限公司 Infrared detector with micro-bridge structure and manufacturing method thereof
CN105424199A (en) * 2015-12-31 2016-03-23 上海集成电路研发中心有限公司 Differential-output infrared detector unit structure and manufacturing method
CN105424199B (en) * 2015-12-31 2018-10-16 上海集成电路研发中心有限公司 A kind of the infrared detector unit structure and manufacturing method of difference output

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DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
122 Ep: pct application non-entry in european phase