WO2000037906A1 - Infrared bolometer and method for the manufacture thereof - Google Patents
Infrared bolometer and method for the manufacture thereof Download PDFInfo
- Publication number
- WO2000037906A1 WO2000037906A1 PCT/KR1998/000445 KR9800445W WO0037906A1 WO 2000037906 A1 WO2000037906 A1 WO 2000037906A1 KR 9800445 W KR9800445 W KR 9800445W WO 0037906 A1 WO0037906 A1 WO 0037906A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- bolometer
- pair
- forming
- absorber
- layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000006096 absorbing agent Substances 0.000 claims abstract description 42
- 238000010521 absorption reaction Methods 0.000 claims abstract description 22
- 239000011159 matrix material Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 12
- 239000011241 protective layer Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 abstract description 8
- 239000010936 titanium Substances 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 239000011810 insulating material Substances 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- -1 e.g. Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
Definitions
- the present invention relates to infrared bolometer; and, more particularly, to infrared bolometer having a decreased NETD and an increased responsivity and detectivity.
- a radiation detector is a device that produces an output signal which is a function of the amount of radiation that is incident upon an active region of the detector.
- Infra-red detectors are those detectors which are sensitive to radiation in the infra-red region of the electromagnetic spectrum.
- thermal detectors including bolometers and photon detectors.
- the photon detectors function based upon the number of photons that are incident upon and interact with electrons in a transducer region of the detector.
- the photon detectors since they function based on direct interactions between electrons and photons, are highly sensitive and have a high response speed compared to the bolometers. However, they have a shortcoming in that the photon detectors operate well only at low temperatures, necessitating a need to an incorporate therein an additional cooling system.
- the bolometers function, on the other hand, based upon a change in the temperature of the transducer region of the detector due to absorption of the radiation.
- the bolometers provide an output signal, i.e., a change in the resistance of materials (called bolometer elements) , that is proportional to the temperature of the transducer region.
- the bolometer elements have been made from both metals and semiconductors. In metals, the resistance change is essentially due to variations in the carrier mobility, which typically decreases with temperature. Greater sensitivity can be obtained in high-resistivity semiconductor bolometer elements in which the free- carrier density is an exponential function of temperature.
- Figs. 1 and 2 there are shown a perspective view and a cross sectional view illustrating a three- level bolometer 100, disclosed in U.S. Ser. Application No. 09/102,364 entitled "BOLOMETER HAVING AN INCREASED FILL FACTOR" .
- the bolometer 100 comprises an active matrix level 10, a support level 20, a pair of posts 40 and an absorption level 30.
- the active matrix level 10 has a substrate 12 including an integrated circuit (not shown) , a pair of connecting terminals 14 and a protective layer 16.
- Each of the connecting terminals 14 made of a metal is located on top of the substrate 12.
- the pair of connecting terminals 14 are electrically connected to the integrated circuit.
- the support level 20 includes a pair of bridges 22 made of silicon nitride (SiN ⁇ ) , each of the bridges 22 having a conduction line 24 formed on top thereof.
- Each of the bridges 22 is provided with an anchor portion 22a, a leg portion 22b and an elevated portion 22c, the anchor portion 22a including a via hole 26 through which one end of the conduction line 24 is electrically connected to the connecting terminal 14, the leg portion 22b supporting the elevated portion
- the absorption level 30 is provided with a bolometer element 32 surrounded by an absorber 31 and an IR absorber coating 33 formed on top of the absorber
- the absorber 31 is fabricated by depositing silicon nitride before and after the formation of the bolometer element 32 to surround the bolometer element
- Titanium (Ti) is chosen as the material for bolometer element 32 because of the ease with which it can be formed. Serpentine shape gives the bolometer element 32 to high resistivity.
- Each of the posts 40 is placed between the absorption level 30 and the support level 20.
- Each of the posts 40 includes an electrical conduit 42 made of a metal, e.g., titanium (Ti) , and surrounded by an insulating material 44 made of, e.g., silicon nitride
- Top end of the electrical conduit 42 is electrically connected to one end of the serpentine bolometer element 32 and bottom end of the electrical conduit 42 is electrically connected to the conduction line 24 on the bridge 22, in such a way that each ends of the serpentine bolometer element 32 in the absorption level 30 is electrically connected to the integrated circuit of the active matrix level 10 through the electrical conduits 42, the conduction lines 24 and the connecting terminals 14.
- the resistivity of the serpentine bolometer element 32 increases, causing a current and a voltage to vary, accordingly.
- the varied current or voltage is amplified by the integrated circuit, in such a way that the amplified current or voltage is read out by a detective circuit (not shown) .
- NETD Noise Equivalent Temperature Difference
- responsivity the responsivity and the detectivity, all of which are proportional, either inversely or directly, to the resistivity of the bolometer element.
- the NETD Noise Equivalent Temperature Difference
- the responsivity and the detectivity are proportional, either inversely or directly, to the resistivity of the bolometer element.
- a primary object of the present invention to provide an infrared bolometer having a decreased NETD and an increased responsivity and detectivity. It is another object of the present invention to provide a method for the manufacture of such infrared bolometer.
- an infra-red bolometer having a decreased NETD and an increased responsivity and detectivity, which comprises: an active matrix level including a substrate and a pair of connecting terminals; a support level provided with a pair of bridges and a pair of conduction line; an absorption level including a bolometer element surrounded by an absorber, the bolometer element being vertically undulated; and a pair of posts, each of the posts including an electrical conduit, each ends of the bolometer element being electrically connected to the respective connecting terminal through the respective conduit and the respective conduction line.
- a method for the manufacture an infra-red bolometer having a decreased NETD and an increased responsivity and detectivity comprising a step of: preparing an active matrix level including a pair of connecting terminals; forming a first sacrificial layer including a pair of empty cavities; forming a supporting level including a pair of bridges and a pair of conduction lines; forming a second sacrificial layer including a pair of empty slots; forming a pair of posts in the pair of empty slots; depositing a lower absorber layer; partially etching the lower absorber layer; forming a bolometer element; forming an upper absorber layer; and removing the first and the second sacrificial layer, thereby forming the infrared bolometer.
- Fig. 1 shows a perspective view setting forth an infrared bolometer previous disclosed
- Fig. 2 presents a schematic cross sectional view depicting the infrared bolometer taken along A - A in Fig. 1;
- Fig. 3 shows a schematic cross sectional view setting forth an infrared bolometer in accordance with the present invention
- Figs. 4A and 4B provide schematic cross sectional views depicting an absorption level of the infrared bolometer taken along its row and column directions, respectively;
- Figs. 5A to 5G present schematic cross sectional views illustrating a method for the manufacture of the infrared bolometer in accordance with the present invention.
- 5G a schematic cross sectional view setting forth an infrared bolometer 200, schematic cross sectional views depicting an absorption level 130 of the infrared bolometer 200 taken along its row and column directions, schematic cross sectional views illustrating a method for the manufacture of the infrared bolometer 200 in accordance with the present invention, respectively.
- like parts appearing in Figs. 3, 4A to 4B and 5A to 5G are represented by like reference numerals.
- the inventive bolometer 200 shown in Fig. 3 comprises an active matrix level 110, a support level 120, a pair of posts 140 and an absorption level 130.
- the active matrix level 110 has a substrate 112 including an integrated circuit (not shown) , a pair of connecting terminals 114 and a protective layer 116.
- Each of the connecting terminals 114 made of a metal is located on top of the substrate 112 and is electrically connected to the integrated circuit.
- the protective layer 116 made of, e.g., silicon nitride (SiN ) , covers the substrate 112 to prevent the connecting terminals 114 and the integrated circuit from damaging chemically and physically during the manufacturing of the infrared bolometer 200.
- the support level 120 includes a pair of bridges
- each of the conduction lines 124 is placed on top of the respective bridge 122.
- an insulating material e.g., silicon nitride (SiN ⁇ ) , silicon oxide (Si0 2 ) or silicon oxy- nitride (SiOx v Ny)
- a pair of conduction lines 124 made of a metal, e.g., titanium (Ti) , wherein each of the conduction lines 124 is placed on top of the respective bridge 122.
- Each of the bridges 122 is provided with an anchor portion 122a, a leg portion 122b and an elevated portion 122c, the anchor portion 122a including a via hole 126 through which one end of each of the conduction lines 124 is electrically connected to the respective connecting terminal 114, the leg portion 122b supporting the elevated portion 122c.
- the absorption level 130 is provided with a bolometer element 132 surrounded by an absorber 131, an reflective layer 133 formed at bottom of the absorber 131 and an IR absorber coating 134 positioned on top of the absorber 131, as shown in Figs. 4A and 4B.
- the absorber 131 made of an insulating material having an low heat-conductivity, e.g., silicon nitride (SiN ) , silicon oxide (SiO ⁇ ) or silicon oxy-nitride (SiO ⁇ N ) is fabricated by depositing the insulating material before and after the formation of the bolometer element 132 to surround the bolometer element 132.
- the bolometer element 132 is made of metal, e.g., titanium, and has a serpentine shape horizontally and an undulation shape vertically to provide the infrared bolometer 200 with the decreased NETD and the increased responsivity and detectivity by increasing the total length of the bolometer element 132.
- the vertical undulation shape of the bolometer element 132 obtained by partial etching of the insulating material of the absorber 131 before the depositing the bolometer element 132 and the horizontal serpentine shape thereof is achieved by patterning the bolometer element 132 after it has been deposited.
- the reflective layer 133 is made of a metal, e.g., Al or Pt, and is used for returning the transmitted IR back to the absorber 131.
- the IR absorber coating 134 is made of, e.g., black gold, and is used for reinforcing an absorption efficiency for the incident IR.
- each of the posts 140 is placed between the absorption level 130 and the support level 120.
- Each of the posts 140 includes an electrical conduit 142 made of a metal, e.g., titanium (Ti) , and surrounded by an insulating material 144 made of, e.g., silicon nitride (SiN ⁇ ) , silicon oxide (SiO) or silicon oxy-nitride (SiO N ) .
- each of the electrical conduits 142 is electrically connected to one end of the bolometer element 132 and bottom end of the electrical conduit 142 is electrically connected to the conduction line 124 on the bridge 122, in such a way that each ends of the bolometer element 132 in the absorption level 130 is electrically connected to the integrated circuit of the active matrix level 110 through the respective electrical conduits 142, the respective conduction lines 124 and the respective connecting terminals 114.
- Figs. 5A to 5G provide schematic cross sectional views illustrating a method for the manufacturing an infrared bolometer 200 in accordance with the present invention.
- the process for manufacturing the infrared bolometer 200 begins with preparing the active matrix level 110 including a substrate 112 having an integrated circuit (not shown) , a pair of connecting terminals 114 and a protective layer 116, as shown in Fig. 5A. Each of the connecting terminals 114 is electrically connected to the integrated circuit .
- the protective layer 116 covers the substrate 112 and the connecting terminals 114.
- a first sacrificial layer 150 including a pair of empty cavities 155 is formed on top of the active matrix level 110 by depositing a poly-Si of the first sacrificial layer 150 and partially etching thereof, as shown in Fig. 5B .
- a supporting level 120 including a pair of bridges 122 made of an insulating material, e.g., silicon oxide, silicon nitride or silicon oxy-nitride, and a pair of conduction lines 124 made of a metal, e.g., Ti, as shown in Fig. 5C, wherein each of the conduction lines 124 is electrically connected to the respective connecting terminal 114 through a via hole 126.
- This step is achieved by depositing and patterning the insulating material of the bridge 122 and the metal of the conduction lines 124, respectively.
- a second sacrificial layer 160 including a pair of empty slots 165 is formed on top of the supporting level 120 by depositing and partially etching a poly-Si of the second sacrificial layer 160, as shown in Fig. 5D.
- a pair of posts 140 are formed in the pair of empty slots 165, each of the posts 140 including an electrical conduit 142 surrounded by an insulating material 144, as shown in Fig. 5E . Bottom end of each of the electrical conduits 142 is connected to the respective conduction line 124.
- an absorption level 130 is formed on top of the second sacrificial layer 160 and the posts 140, the absorption level 130 including an absorber 131 made of an insulating material, e.g., silicon oxide, silicon nitride or silicon oxy-nitride, a bolometer element 132 made of titanium, a reflective layer 133 made of a metal, e.g., Al or Pt , and an IR absorber coating 134 made of, e.g., black gold, as shown in Fig. 5F.
- This step is achieved by following the procedures described herebelow.
- a metal of the reflective layer 133 is deposited by using a sputtering method.
- a lower absorber layer (not shown) is deposited by using a CVD method and is partially etched by using a photolithography method.
- a bolometer element material (not shown) is deposited on top of the lower absorber layer, wherein the partial etching of the lower absorber layer provides the bolometer element material with a vertical undulation shape, and the bolometer element material is then patterned into have a horizontal serpentine shape, thereby forming the bolometer element 132.
- an upper absorber layer (not shown) is deposited to surround the bolometer element 132, thereby forming the absorber 131.
- the IR absorber coating 134 is formed on top of the absorber 131, thereby forming the absorption level 130.
- first and the second sacrificial layer 150, 160 are entirely removed by using an isotropic etching method with an etchant, e.g., XeF 2 , to thereby form the infrared bolometer 200, as shown in Fig. 5G.
- an etchant e.g., XeF 2
- the partial etching step for providing the bolometer element 132 with the vertical undulation shape can be applied to the second sacrificial layer 160 or the reflective layer 133 instead of the lower absorber layer in accordance with the other embodiments of the present invention.
- the resistivity of the bolometer element 132 changes, causing a current and a voltage to vary, accordingly.
- the varied current or voltage is amplified by the integrated circuit, in such a way that the amplified current or voltage is read out by detective circuit (not shown) .
- the bolometer element has the horizontal serpentine shape and the vertical undulation shape to maximize the total length of the bolometer element in a given space or area, thereby decreasing the NETD and increasing the responsivity and detectivity in the infrared bolometer.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000589916A JP2002533667A (en) | 1998-12-18 | 1998-12-18 | Infrared bolometer and manufacturing method thereof |
EP98959290A EP1147388A1 (en) | 1998-12-18 | 1998-12-18 | Infrared bolometer and method for the manufacture thereof |
PCT/KR1998/000445 WO2000037906A1 (en) | 1998-12-18 | 1998-12-18 | Infrared bolometer and method for the manufacture thereof |
CN98814364.XA CN1327535A (en) | 1998-12-18 | 1998-12-18 | Infrared bolometer and method for the manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/KR1998/000445 WO2000037906A1 (en) | 1998-12-18 | 1998-12-18 | Infrared bolometer and method for the manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000037906A1 true WO2000037906A1 (en) | 2000-06-29 |
Family
ID=19531217
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR1998/000445 WO2000037906A1 (en) | 1998-12-18 | 1998-12-18 | Infrared bolometer and method for the manufacture thereof |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1147388A1 (en) |
JP (1) | JP2002533667A (en) |
CN (1) | CN1327535A (en) |
WO (1) | WO2000037906A1 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1524507A1 (en) * | 2003-10-15 | 2005-04-20 | Ulis | Bolometer, infra-red detection apparatus using it and means of manufacture |
FR2885408A1 (en) * | 2005-07-25 | 2006-11-10 | Commissariat Energie Atomique | Electromagnetic radiation e.g. infrared radiation, thermal detection device, has elementary detectors with thermal insulation arm comprising support end on support, where arm is arranged below membranes of other detectors |
WO2006120362A1 (en) * | 2005-05-12 | 2006-11-16 | Commissariat A L'energie Atomique | Thermal detector for electromagnetic radiation an infrared detection device using said detectors |
FR2885690A1 (en) * | 2005-05-12 | 2006-11-17 | Commissariat Energie Atomique | Thermal infrared radiation detector e.g. resistive type bolometer, for infrared imaging application, has sensitive material presented in form of wafer extending along direction perpendicular to plane in which substrate is inscribed |
US7232998B2 (en) | 2002-05-10 | 2007-06-19 | Nec Corporation | Bolometer-type infrared solid-state image sensor |
FR2919049A1 (en) * | 2007-07-20 | 2009-01-23 | Ulis Soc Par Actions Simplifie | ELECTROMAGNETIC RADIATION DETECTOR AND METHOD FOR MANUFACTURING SUCH DETECTOR |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6667479B2 (en) * | 2001-06-01 | 2003-12-23 | Raytheon Company | Advanced high speed, multi-level uncooled bolometer and method for fabricating same |
FR2875298B1 (en) * | 2004-09-16 | 2007-03-02 | Commissariat Energie Atomique | THERMAL DETECTOR FOR ELECTROMAGNETIC RADIATION COMPRISING AN ABSORBENT MEMBRANE FIXED IN SUSPENSION |
CN102479879A (en) * | 2010-11-29 | 2012-05-30 | 比亚迪股份有限公司 | Preparation methods of amorphous silicon thermosensitive film and uncooled amorphous silicon microbolometer |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5288649A (en) * | 1991-09-30 | 1994-02-22 | Texas Instruments Incorporated | Method for forming uncooled infrared detector |
US5572029A (en) * | 1994-06-30 | 1996-11-05 | Walker; William K. | Thermal isolation for hybrid thermal detectors |
-
1998
- 1998-12-18 EP EP98959290A patent/EP1147388A1/en not_active Withdrawn
- 1998-12-18 WO PCT/KR1998/000445 patent/WO2000037906A1/en not_active Application Discontinuation
- 1998-12-18 CN CN98814364.XA patent/CN1327535A/en active Pending
- 1998-12-18 JP JP2000589916A patent/JP2002533667A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5288649A (en) * | 1991-09-30 | 1994-02-22 | Texas Instruments Incorporated | Method for forming uncooled infrared detector |
US5572029A (en) * | 1994-06-30 | 1996-11-05 | Walker; William K. | Thermal isolation for hybrid thermal detectors |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7232998B2 (en) | 2002-05-10 | 2007-06-19 | Nec Corporation | Bolometer-type infrared solid-state image sensor |
EP1524507A1 (en) * | 2003-10-15 | 2005-04-20 | Ulis | Bolometer, infra-red detection apparatus using it and means of manufacture |
FR2861172A1 (en) * | 2003-10-15 | 2005-04-22 | Ulis | BOLOMETRIC DETECTOR, INFRARED DETECTION DEVICE USING SUCH A BOLOMETRIC DETECTOR AND METHOD FOR MANUFACTURING SAME |
US7138630B2 (en) | 2003-10-15 | 2006-11-21 | Ulis | Bolometric detector, infrared detection device employing such a bolometric detector and process for fabricating this detector |
WO2006120362A1 (en) * | 2005-05-12 | 2006-11-16 | Commissariat A L'energie Atomique | Thermal detector for electromagnetic radiation an infrared detection device using said detectors |
FR2885690A1 (en) * | 2005-05-12 | 2006-11-17 | Commissariat Energie Atomique | Thermal infrared radiation detector e.g. resistive type bolometer, for infrared imaging application, has sensitive material presented in form of wafer extending along direction perpendicular to plane in which substrate is inscribed |
US7544942B2 (en) | 2005-05-12 | 2009-06-09 | Commissariat A L'energie Atomique | Thermal detector for electromagnetic radiation and infrared detection device using such detectors |
FR2885408A1 (en) * | 2005-07-25 | 2006-11-10 | Commissariat Energie Atomique | Electromagnetic radiation e.g. infrared radiation, thermal detection device, has elementary detectors with thermal insulation arm comprising support end on support, where arm is arranged below membranes of other detectors |
FR2919049A1 (en) * | 2007-07-20 | 2009-01-23 | Ulis Soc Par Actions Simplifie | ELECTROMAGNETIC RADIATION DETECTOR AND METHOD FOR MANUFACTURING SUCH DETECTOR |
EP2019301A1 (en) * | 2007-07-20 | 2009-01-28 | Ulis | Electromagnetic radiation detector and method of manufacturing such a detector |
US7999227B2 (en) | 2007-07-20 | 2011-08-16 | Ulis | Electromagnetic radiation detector and method for manufacturing such a detector |
Also Published As
Publication number | Publication date |
---|---|
JP2002533667A (en) | 2002-10-08 |
CN1327535A (en) | 2001-12-19 |
EP1147388A1 (en) | 2001-10-24 |
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