JP2009218783A - 圧電デバイス - Google Patents
圧電デバイス Download PDFInfo
- Publication number
- JP2009218783A JP2009218783A JP2008059319A JP2008059319A JP2009218783A JP 2009218783 A JP2009218783 A JP 2009218783A JP 2008059319 A JP2008059319 A JP 2008059319A JP 2008059319 A JP2008059319 A JP 2008059319A JP 2009218783 A JP2009218783 A JP 2009218783A
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- Prior art keywords
- substrate
- piezoelectric
- base
- base substrate
- piezoelectric vibrator
- Prior art date
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- 239000000758 substrate Substances 0.000 claims abstract description 116
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0542—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a lateral arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Abstract
【解決手段】本発明の圧電デバイスは10、圧電振動子30と電子部品40とを平面視して互いに重ならないようにベース基板20の一方の面に実装した圧電デバイス10であって、圧電振動子30のパッケージベース36の実装面に凹陥部322又は切り欠き部31が形成され、平面視してベース基板20の一部が、圧電振動子30の凹陥部322又は切り欠き部31の領域内に配置され、凹陥部322又は切り欠き部31の底面とベース基板20とが接続されていることを特徴としている。この場合においてパッケージベース36の凹陥部322又は切り欠き部31の底面に外部電極33が形成されている。
【選択図】図1
Description
本発明の圧電デバイスの例として圧電発振器を用いて説明する。図1は第1実施形態の圧電発振器の説明図である。同図(1)は圧電発振器の平面図を示し、(2)はA−A線の断面図を示し、(3)B−B線の断面図をそれぞれ示している。図2は第1実施形態の圧電発振器のベース基板の説明図である。同図(1)は上面図を示し、(2)は下面図をそれぞれ示している。
圧電振動子30は、図1(2),(3)に示すように、平板基板32と枠型基板34の接合により内部空間35が形成された矩形状のパッケージベース36を有する表面実装型の振動子である。パッケージベース36の内部空間35に露出した内側底面、すなわち平板基板32の上面には、例えば、タングステンメタライズ上にニッケルメッキ及び金メッキで形成した電極部が設けられている。この電極部の上面には導電性接着剤が用いられて、水晶等の圧電材料により形成された圧電振動片37が接合固定されている。
導電パターン24は図2に示すように、圧電振動子およびICチップを電気的あるいは電気的機械的に接続するためのパッドとなる複数の端子部22と、この複数の端子部同士及び/又は端子部と実装端子部とを電気的に接続するための配線パターン23とから構成されている。
図示のように第2実施形態に係る圧電発振器100と、図1に示す圧電発振器10との相違は、圧電振動子300の実装構造であり、その他の構成は図1に示す圧電発振器10の構成と同一であり、その詳細な説明を省略する。
Claims (3)
- 圧電振動子と電子部品とを平面視して互いに重ならないようにベース基板の一方の面に実装した圧電デバイスであって、
前記圧電振動子のパッケージベースの実装面に凹陥部又は切り欠き部が形成され、
平面視して前記ベース基板の一部が、前記圧電振動子の前記凹陥部又は前記切り欠き部の領域内に配置され、
前記凹陥部又は前記切り欠き部の底面と、前記ベース基板とが接続されている
ことを特徴とする圧電デバイス。 - 前記パッケージベースの前記凹陥部又は前記切り欠き部の前記底面に外部電極が形成されていることを特徴とする請求項1に記載の圧電デバイス。
- 前記パッケージベースは上層基板と下層基板とを備え、前記下層基板に凹陥部が形成され、
前記ベース基板の凸部を前記凹陥部に嵌め合わせたことを特徴とする請求項1又は2に記載の圧電デバイス。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008059319A JP2009218783A (ja) | 2008-03-10 | 2008-03-10 | 圧電デバイス |
US12/398,663 US8080921B2 (en) | 2008-03-10 | 2009-03-05 | Reduced-height piezoelectric device having a piezoelectric resonator and electronic component |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008059319A JP2009218783A (ja) | 2008-03-10 | 2008-03-10 | 圧電デバイス |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009218783A true JP2009218783A (ja) | 2009-09-24 |
Family
ID=41052883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008059319A Withdrawn JP2009218783A (ja) | 2008-03-10 | 2008-03-10 | 圧電デバイス |
Country Status (2)
Country | Link |
---|---|
US (1) | US8080921B2 (ja) |
JP (1) | JP2009218783A (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9129886B2 (en) | 2012-11-07 | 2015-09-08 | Texas Instruments Incorporated | Integrated piezoelectric resonator and additional active circuit |
CN109450379A (zh) * | 2018-09-21 | 2019-03-08 | 天津大学 | 柔性射频振荡器 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5267287A (en) * | 1975-12-01 | 1977-06-03 | Citizen Watch Co Ltd | Mounting method of small-size piezoelectric oscillator |
JPS6041868B2 (ja) * | 1978-09-22 | 1985-09-19 | 松島工業株式会社 | 回路ユニット |
US4750246A (en) * | 1984-10-29 | 1988-06-14 | Hughes Aircraft Company | Method of making compensated crystal oscillator |
US5041800A (en) * | 1989-05-19 | 1991-08-20 | Ppa Industries, Inc. | Lower power oscillator with heated resonator (S), with dual mode or other temperature sensing, possibly with an insulative support structure disposed between the resonator (S) and a resonator enclosure |
JP2000031324A (ja) | 1998-07-10 | 2000-01-28 | Toyo Commun Equip Co Ltd | 電子部品の構造 |
JP2000286526A (ja) * | 1999-03-30 | 2000-10-13 | Murata Mfg Co Ltd | 表面実装構造及びその表面実装構造に用いられる表面実装型電子部品 |
JP2002335128A (ja) * | 2001-05-09 | 2002-11-22 | Seiko Epson Corp | 圧電デバイス |
JP2007173431A (ja) * | 2005-12-21 | 2007-07-05 | Epson Toyocom Corp | 圧電デバイス |
JP2007201044A (ja) | 2006-01-25 | 2007-08-09 | Epson Toyocom Corp | 電子デバイス |
JP2007214307A (ja) | 2006-02-09 | 2007-08-23 | Epson Toyocom Corp | 電子デバイス |
JP2009232150A (ja) * | 2008-03-24 | 2009-10-08 | Epson Toyocom Corp | 圧電デバイスおよび圧電デバイスの製造方法 |
JP5286041B2 (ja) * | 2008-11-14 | 2013-09-11 | 日本電波工業株式会社 | 表面実装用の水晶発振器 |
JP2010135874A (ja) * | 2008-12-02 | 2010-06-17 | Nippon Dempa Kogyo Co Ltd | 表面実装用の水晶発振器 |
JP2010183398A (ja) * | 2009-02-06 | 2010-08-19 | Epson Toyocom Corp | 圧電発振器 |
-
2008
- 2008-03-10 JP JP2008059319A patent/JP2009218783A/ja not_active Withdrawn
-
2009
- 2009-03-05 US US12/398,663 patent/US8080921B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20090224635A1 (en) | 2009-09-10 |
US8080921B2 (en) | 2011-12-20 |
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