JP2009218585A5 - - Google Patents
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- Publication number
- JP2009218585A5 JP2009218585A5 JP2009041598A JP2009041598A JP2009218585A5 JP 2009218585 A5 JP2009218585 A5 JP 2009218585A5 JP 2009041598 A JP2009041598 A JP 2009041598A JP 2009041598 A JP2009041598 A JP 2009041598A JP 2009218585 A5 JP2009218585 A5 JP 2009218585A5
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- semiconductor device
- gas
- conductive member
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 17
- 238000004519 manufacturing process Methods 0.000 claims 17
- 239000004065 semiconductor Substances 0.000 claims 17
- 238000007664 blowing Methods 0.000 claims 9
- 230000004888 barrier function Effects 0.000 claims 8
- 150000001282 organosilanes Chemical class 0.000 claims 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 5
- 238000000034 method Methods 0.000 claims 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 2
- 229910000077 silane Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6924408P | 2008-03-12 | 2008-03-12 | |
| US61/069,244 | 2008-03-12 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009218585A JP2009218585A (ja) | 2009-09-24 |
| JP2009218585A5 true JP2009218585A5 (https=) | 2012-09-20 |
| JP5143769B2 JP5143769B2 (ja) | 2013-02-13 |
Family
ID=41062143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009041598A Expired - Fee Related JP5143769B2 (ja) | 2008-03-12 | 2009-02-25 | 半導体装置およびその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8278205B2 (https=) |
| JP (1) | JP5143769B2 (https=) |
| KR (1) | KR20090097827A (https=) |
| CN (1) | CN101533799B (https=) |
| TW (1) | TWI392056B (https=) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120049239A (ko) * | 2009-06-26 | 2012-05-16 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 방법 |
| US9340880B2 (en) | 2009-10-27 | 2016-05-17 | Silcotek Corp. | Semiconductor fabrication process |
| WO2012047945A2 (en) * | 2010-10-05 | 2012-04-12 | Silcotek Corp. | Wear resistant coating, article, and method |
| US20120273948A1 (en) * | 2011-04-27 | 2012-11-01 | Nanya Technology Corporation | Integrated circuit structure including a copper-aluminum interconnect and method for fabricating the same |
| US11292924B2 (en) | 2014-04-08 | 2022-04-05 | Silcotek Corp. | Thermal chemical vapor deposition coated article and process |
| US10876206B2 (en) | 2015-09-01 | 2020-12-29 | Silcotek Corp. | Thermal chemical vapor deposition coating |
| CN107887323B (zh) | 2016-09-30 | 2020-06-05 | 中芯国际集成电路制造(北京)有限公司 | 互连结构及其制造方法 |
| KR102616489B1 (ko) | 2016-10-11 | 2023-12-20 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
| CN108231659B (zh) | 2016-12-15 | 2020-07-07 | 中芯国际集成电路制造(北京)有限公司 | 互连结构及其制造方法 |
| CN106783730B (zh) * | 2016-12-28 | 2020-09-04 | 上海集成电路研发中心有限公司 | 一种形成空气隙/铜互连的方法 |
| JP6441989B2 (ja) | 2017-04-27 | 2018-12-19 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体 |
| US11161324B2 (en) | 2017-09-13 | 2021-11-02 | Silcotek Corp. | Corrosion-resistant coated article and thermal chemical vapor deposition coating process |
| KR102866846B1 (ko) * | 2019-05-20 | 2025-09-30 | 램 리써치 코포레이션 | SiCxOy를 위한 핵생성 층으로서 SixNy |
| WO2020252306A1 (en) | 2019-06-14 | 2020-12-17 | Silcotek Corp. | Nano-wire growth |
| US12473635B2 (en) | 2020-06-03 | 2025-11-18 | Silcotek Corp. | Dielectric article |
| US11978668B2 (en) | 2021-09-09 | 2024-05-07 | Samsung Electronics Co., Ltd. | Integrated circuit devices including a via and methods of forming the same |
| US20250273454A1 (en) * | 2024-02-28 | 2025-08-28 | Applied Materials, Inc. | Microwave assisted passivation layer removal |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08213343A (ja) * | 1995-01-31 | 1996-08-20 | Sony Corp | 半導体装置およびその製造方法 |
| EP1077479A1 (en) * | 1999-08-17 | 2001-02-21 | Applied Materials, Inc. | Post-deposition treatment to enchance properties of Si-O-C low K film |
| JP2001185549A (ja) * | 1999-12-24 | 2001-07-06 | Toshiba Corp | 半導体装置の製造方法 |
| KR100762863B1 (ko) * | 2000-06-30 | 2007-10-08 | 주식회사 하이닉스반도체 | 확산방지 티타늄-실리콘-질소 막을 이용한 구리금속배선방법 |
| JP2002319618A (ja) * | 2001-04-20 | 2002-10-31 | Anelva Corp | 配線用Ｃｕ膜の形成方法及び形成装置 |
| JP2003045960A (ja) * | 2001-08-01 | 2003-02-14 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| JP4293752B2 (ja) * | 2002-02-28 | 2009-07-08 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2003347299A (ja) * | 2002-05-24 | 2003-12-05 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| JP2004071956A (ja) | 2002-08-08 | 2004-03-04 | Toshiba Corp | 半導体装置の製造方法 |
| JP4454242B2 (ja) * | 2003-03-25 | 2010-04-21 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
| EP1691403A4 (en) * | 2003-12-04 | 2009-04-15 | Tokyo Electron Ltd | METHOD FOR CLEANING THE CONDUCTIVE COATING SURFACE OF A SEMICONDUCTOR SUBSTRATE |
| US7229911B2 (en) * | 2004-04-19 | 2007-06-12 | Applied Materials, Inc. | Adhesion improvement for low k dielectrics to conductive materials |
| US7193325B2 (en) * | 2004-04-30 | 2007-03-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reliability improvement of SiOC etch with trimethylsilane gas passivation in Cu damascene interconnects |
| JP4473824B2 (ja) * | 2005-01-21 | 2010-06-02 | 株式会社東芝 | 半導体装置の製造方法 |
| US8211794B2 (en) * | 2007-05-25 | 2012-07-03 | Texas Instruments Incorporated | Properties of metallic copper diffusion barriers through silicon surface treatments |
-
2009
- 2009-02-25 JP JP2009041598A patent/JP5143769B2/ja not_active Expired - Fee Related
- 2009-02-25 TW TW098106059A patent/TWI392056B/zh not_active IP Right Cessation
- 2009-02-25 US US12/380,368 patent/US8278205B2/en not_active Expired - Fee Related
- 2009-03-12 CN CN2009101189965A patent/CN101533799B/zh not_active Expired - Fee Related
- 2009-03-12 KR KR1020090021118A patent/KR20090097827A/ko not_active Ceased
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