JP2009212542A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2009212542A JP2009212542A JP2009151837A JP2009151837A JP2009212542A JP 2009212542 A JP2009212542 A JP 2009212542A JP 2009151837 A JP2009151837 A JP 2009151837A JP 2009151837 A JP2009151837 A JP 2009151837A JP 2009212542 A JP2009212542 A JP 2009212542A
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Abstract
【解決手段】封止体の一面に露出するタブ,タブ吊りリード及び複数のリードと、封止体内に位置しタブの表面に接着剤で固定される半導体素子と、半導体素子の電極とリードを電気的に接続する導電性のワイヤと、半導体素子の電極と半導体素子から外れたタブの表面部分を電気的に接続する導電性のワイヤとを有するノンリード型の半導体装置であって、タブはその外周縁が半導体素子の外周縁よりも外側に位置するように半導体素子よりも大きくなり、半導体素子が固定される半導体素子固定領域と、ワイヤが接続されるワイヤ接続領域との間の前記タブ表面には、半導体素子固定領域を囲むように溝が設けられている。タブはその断面が逆台形となり、周縁はパッケージ内に食い込んでいる。
【選択図】図1
Description
本発明の他の目的は、ダウンボンド接合部の接続の信頼性が高い半導体装置及びノンリード型半導体装置を提供することにある。
本発明の他の目的は、タブ表面とパッケージを構成するレジンとの剥離を防止できる半導体装置及びノンリード型半導体装置を提供することにある。
本発明の他の目的は、半導体素子を搭載するタブと、パッケージを構成するレジンとの密着性が高く耐湿性が高い半導体装置及びノンリード型半導体装置を提供することにある。
本発明の前記ならびにそのほかの目的と新規な特徴は、本明細書の記述および添付図面からあきらかになるであろう。
前記封止体の実装面に裏面を露出しており、前記裏面と反対側の表面に半導体素子固定領域と、ワイヤ接続領域を有しているタブと、
前記封止体の実装面に露出しており、前記タブに連なるタブ吊りリードと、
前記封止体の実装面に裏面を露出する複数のリードと、
前記封止体内に位置し、前記タブの表面に接着剤を介して、裏面が前記タブの表面に対向するように、前記半導体素子固定領域上に固定される半導体素子と、
前記半導体素子の主面上に形成された複数の電極と、
前記複数の電極と前記リードの表面とを電気的に接続する導電性のワイヤと、
前記半導体素子の電極と前記タブのワイヤ接続領域とを電気的に接続する導電性のワイヤとを有する半導体装置であって、
前記タブはその外周縁が前記半導体素子の外周縁よりも外側に位置するように前記半導体素子よりも大きくなり、
前記半導体素子固定領域と、前記ワイヤ接続領域との間の前記タブ表面には溝が設けられていることを特徴とする。
〔実施例1〕
図1乃至図17は本発明の実施例1(実施形態1)である半導体装置、特にノンリード型半導体装置及びその製造方法に係わる図である。本実施形態1では四角形のパッケージの裏面にタブ及びこのタブに連なるタブ吊りリード並びにタブが露出するQFN型の半導体装置に本発明を適用した例について説明する。
(1)タブ4はその外周縁が半導体素子(チップ)3の外周縁よりも外側に位置するようにチップ3よりも大きくなっていることから、チップ3の電極はいずれの位置であっても近くのタブ表面に接続(ダウンボンド)することができる。この場合、チップ3の全周の外側にタブ表面部分が存在することから、ダウンボンドのワイヤ長さも最も短くすることもできる。ダウンボンドは、グランド電極を共通グランドとなるタブ表面に接続するが、チップ3のいずれのグランド電極も近くのタブ表面部分に接続できるため、半導体素子が高周波デバイスである場合、回路のグランド電位の安定化が図れる。
図18及び図19は本発明の実施例2(実施形態2)であるノンリード型半導体装置に係わる図であって、図18はノンリード型半導体装置の模式的断面図、図19はタブの模式的拡大平面図である。
図20は本発明の実施例3(実施形態3)であるノンリード型半導体装置の模式的断面図である。
本実施形態3の半導体装置1は、タブ4の外周部のワイヤ接続領域を除いて搭載するチップ3のチップサイズよりも大きい底が平坦となる窪み50を設けた構成である。この例では、チップ3が窪み50の平坦な底に接着剤5で固定されるため、窪み50の深さと、接着剤5の厚さを選択すれば、チップ3の底面がタブ表面の高さを越えて窪み50の底側に入るようになり、半導体装置1の高さhを実施形態1の半導体装置1の場合の高さHに比べて低くすることができる。
図21乃至図23は本発明の実施例4(実施形態4)であるノンリード型半導体装置に係わる図である。図21は一部を切り欠いた半導体装置の平面図、図22は図21のE−E線に沿う拡大断面図である。
図25は本発明の実施例5(実施形態5)であるノンリード型半導体装置の一部を切り欠いた平面図である。本実施形態5は実施形態4の半導体装置1において、スリット60の両端部分にスリット60からタブ4の外周に向かうスリット61を設けてある。このスリット61はタブ4を貫通する構造となる。従って、このスリット61の先端はタブ4の縁に到達するとワイヤ接続領域が支持されなくなるため、スリット61の先端はタブ4の縁に到達しない構造となる。
なお、前述の熱歪み緩和効果を得るため、タブ4の外周縁から内側に向けてスリットを1乃至複数設けてもよい。
図27は本発明の実施例6(実施形態6)であるノンリード型半導体装置におけるタブの一部を示す斜視図である。本実施形態6ではタブ4の各辺に沿って設けられる半導体素子固定領域とワイヤ接続領域と間のスリット60の両端に前記スリット61に変わって底のある溝70を設ける例である。即ち、スリット60タブ4の外周に向かって溝70が1本乃至複数本設けた例である。
この例では溝70は底が存在することから、スリットとは異なり、タブ4の縁にまで到達してもワイヤ接続領域の支持ができることから特に問題はない。
なお、前述の熱歪み緩和効果を得るため、タブ4の外周縁から内側に向けて溝を1乃至複数設けてもよい。
Claims (18)
- 主面、前記主面とは反対側の裏面、および前記主面と前記裏面との間にある側面とを有する封止体と、
複数の電極が配置された主面と前記主面とは反対側の裏面とを有し、前記封止体内に配置された半導体チップと、
主面と前記主面とは反対側の裏面とを有し、前記主面と前記半導体チップの主面とが同一方向を向くように、前記半導体チップが前記主面上に搭載されたタブと、
前記タブと連結された複数のタブ吊りリードと、
主面と前記主面とは反対側の裏面とを有し、前記タブの周囲に配置され、かつ前記裏面が前記封止体の裏面から露出した複数のリードと、
前記封止体内において、前記半導体チップの電極と前記リードの主面のそれぞれとを電気的に接続する導電性のワイヤと、を有し、
前記リードのそれぞれは、前記タブから前記封止体の側面へ向かう方向に延びており、
前記リードの主面には、前記封止体の側面よりも前記タブに近い位置に前記導電性のワイヤが接続されたワイヤ接続領域が設けられており、
前記リードの主面において、前記リードが延びる方向と直交する方向の前記ワイヤ接続領域の幅は、前記ワイヤ接続領域以外の部分の幅よりも広いことを特徴とする半導体装置。 - 前記リードの主面には、前記ワイヤ接続領域と前記ワイヤ接続領域以外の部分とを区分する溝が設けられていることを特徴とする請求項1に記載の半導体装置。
- 前記溝は、前記ワイヤ接続領域内には設けられていないことを特徴とする請求項2に記載の半導体装置。
- 前記溝は、前記ワイヤ接続領域と前記封止体の側面との間に設けられていることを特徴とする請求項3に記載の半導体装置。
- 前記リードが延びる方向と直交する方向の前記リードの主面の幅は、前記リードの裏面の幅よりも広いことを特徴とする請求項1に記載の半導体装置。
- 前記タブの裏面は、前記封止体の裏面から露出していることを特徴とする請求項1に記載の半導体装置。
- 前記タブの主面の面積は、前記タブの裏面の面積よりも大きいことを特徴とする請求項6に記載の半導体装置。
- 前記タブの断面は逆台形形状であることを特徴とする請求項7に記載の半導体装置。
- 前記タブ吊りリードは、主面と前記主面とは反対側の裏面とを有し、前記裏面は前記タブの裏面と同一平面であって、前記封止体の裏面から露出していることを特徴とする請求項6に記載の半導体装置。
- 前記タブ、前記タブ吊りリード、および前記リードは銅製であることを特徴とする請求項9に記載の半導体装置。
- 前記タブ、前記タブ吊りリード、および前記リードの厚さは同じであることを特徴とする請求項10に記載の半導体装置。
- 前記タブの外形は、前記半導体チップの外形よりも大きく、前記タブの主面には前記半導体チップの周囲を囲むように溝が形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記半導体チップは四角形状であって、前記タブの外形は、前記半導体チップの外形よりも大きく、前記タブの主面から裏面にかけて貫通する複数のスリットが前記半導体チップの各辺に沿って形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記ワイヤ接続領域にはメッキ膜が形成されており、前記導電性のワイヤは前記メッキ膜を介して前記リードと電気的に接続されていることを特徴とする請求項1に記載の半導体装置。
- 前記メッキ膜は、Agメッキ膜であることを特徴とする請求項14に記載の半導体装置。
- 前記タブ、前記タブ吊りリード、および前記リードは、プレスによる打ち抜きによって形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記タブ、前記タブ吊りリード、および前記リードは、エッチングによって形成されていることを特徴とする請求項1に記載の半導体装置。
- 主面、前記主面とは反対側の裏面、および前記主面と前記裏面との間にある側面とを有する封止体と、
複数の電極が配置された主面と前記主面とは反対側の裏面とを有し、前記封止体内に配置された半導体チップと、
主面と前記主面とは反対側の裏面とを有し、前記主面と前記半導体チップの主面とが同一方向を向くように、前記半導体チップが前記主面上に搭載されたタブと、
前記タブと連結された複数のタブ吊りリードと、
主面と前記主面とは反対側の裏面とを有し、前記タブの周囲に配置され、かつ前記裏面が前記封止体の裏面から露出した複数のリードと、
前記封止体内において、前記半導体チップの電極と前記リードの主面のそれぞれとを電気的に接続する導電性のワイヤと、を有し、
前記リードのそれぞれは、前記タブから前記封止体の側面へ向かう方向に延びており、
前記リードの主面には溝および前記溝と前記タブとの間に挟まれ、かつ前記リードの主面の一部であり、前記導電性のワイヤが接続されたワイヤ接続領域が設けられており、
前記リードの主面において、前記リードが延びる方向と直交する方向の前記ワイヤ接続領域の幅は、前記ワイヤ接続領域以外の部分の幅よりも広く、前記溝は前記ワイヤ接続領域内には設けられていないことを特徴とする半導体装置。
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