JP2009200483A - シリコン酸化膜の形成方法 - Google Patents

シリコン酸化膜の形成方法 Download PDF

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Publication number
JP2009200483A
JP2009200483A JP2009013724A JP2009013724A JP2009200483A JP 2009200483 A JP2009200483 A JP 2009200483A JP 2009013724 A JP2009013724 A JP 2009013724A JP 2009013724 A JP2009013724 A JP 2009013724A JP 2009200483 A JP2009200483 A JP 2009200483A
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Japan
Prior art keywords
silicon oxide
oxide film
plasma
processing
thickness
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Pending
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JP2009013724A
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English (en)
Japanese (ja)
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JP2009200483A5 (enExample
Inventor
Hideo Nakamura
秀雄 中村
Yoshiro Kabe
義郎 壁
Junichi Kitagawa
淳一 北川
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
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Priority to JP2009013724A priority Critical patent/JP2009200483A/ja
Publication of JP2009200483A publication Critical patent/JP2009200483A/ja
Publication of JP2009200483A5 publication Critical patent/JP2009200483A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01346—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a gaseous ambient using an oxygen or a water vapour, e.g. oxidation through a layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0145—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape
    • H10W10/0147—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape the shapes being altered by a local oxidation of silicon process, e.g. trench corner rounding by LOCOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0147—Manufacturing their gate sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2009013724A 2008-01-24 2009-01-24 シリコン酸化膜の形成方法 Pending JP2009200483A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009013724A JP2009200483A (ja) 2008-01-24 2009-01-24 シリコン酸化膜の形成方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008013564 2008-01-24
JP2009013724A JP2009200483A (ja) 2008-01-24 2009-01-24 シリコン酸化膜の形成方法

Publications (2)

Publication Number Publication Date
JP2009200483A true JP2009200483A (ja) 2009-09-03
JP2009200483A5 JP2009200483A5 (enExample) 2012-01-26

Family

ID=40901251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009013724A Pending JP2009200483A (ja) 2008-01-24 2009-01-24 シリコン酸化膜の形成方法

Country Status (5)

Country Link
US (1) US20110017586A1 (enExample)
JP (1) JP2009200483A (enExample)
KR (1) KR101249611B1 (enExample)
TW (1) TW200941579A (enExample)
WO (1) WO2009093760A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009239157A (ja) * 2008-03-28 2009-10-15 Toshiba Corp 半導体装置の製造方法
WO2011040455A1 (ja) * 2009-09-30 2011-04-07 東京エレクトロン株式会社 選択的プラズマ窒化処理方法及びプラズマ窒化処理装置
JP2012216667A (ja) * 2011-03-31 2012-11-08 Tokyo Electron Ltd プラズマ処理方法
WO2018179038A1 (ja) * 2017-03-27 2018-10-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、プログラム及び基板処理装置
JP2025009917A (ja) * 2023-07-06 2025-01-20 ベイジン イータウン セミコンダクター テクノロジー カンパニー リミテッド 半導体ワークピースのための低圧酸化処理方法及び装置
JP2025537362A (ja) * 2022-11-29 2025-11-14 アプライド マテリアルズ インコーポレイテッド インシトゥ統合処理による酸化共形性の改善

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011097029A (ja) * 2009-09-30 2011-05-12 Tokyo Electron Ltd 半導体装置の製造方法
US8642479B2 (en) * 2011-07-14 2014-02-04 Nanya Technology Corporation Method for forming openings in semiconductor device
US9263283B2 (en) 2011-09-28 2016-02-16 Tokyo Electron Limited Etching method and apparatus
KR101854609B1 (ko) 2011-12-27 2018-05-08 삼성전자주식회사 게이트 절연층의 형성 방법
US20130320453A1 (en) * 2012-06-01 2013-12-05 Abhijit Jayant Pethe Area scaling on trigate transistors
JP2014209515A (ja) * 2013-04-16 2014-11-06 東京エレクトロン株式会社 エッチング方法
JP6125467B2 (ja) * 2014-06-16 2017-05-10 富士フイルム株式会社 プリント注文受付機とその作動方法および作動プログラム

Citations (7)

* Cited by examiner, † Cited by third party
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JP2002033381A (ja) * 2000-07-19 2002-01-31 Mitsubishi Electric Corp 素子分離絶縁膜の形成方法及び、半導体装置の製造方法
WO2002058130A1 (en) * 2001-01-22 2002-07-25 Tokyo Electron Limited Method for producing material of electronic device
JP2002280369A (ja) * 2001-03-19 2002-09-27 Canon Sales Co Inc シリコン基板の酸化膜形成装置及び酸化膜形成方法
WO2004023549A1 (ja) * 2002-08-30 2004-03-18 Fujitsu Amd Semiconductor Limited 半導体装置及びその製造方法
JP2005286339A (ja) * 2004-03-29 2005-10-13 Sharp Corp シリコンカーバイド基板上に二酸化シリコンを生成する高密度プラズマプロセス
JP2005294551A (ja) * 2004-03-31 2005-10-20 Toshiba Corp シリコン系被処理物の酸化処理方法、酸化処理装置および半導体装置の製造方法
WO2006073568A2 (en) * 2004-11-16 2006-07-13 Applied Materials, Inc. MULTI-LAYER HIGH QUALITY GATE DIELECTRIC FOR LOW-TEMPERATURE POLY-SILICON TFTs

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JPH0519296A (ja) * 1991-07-12 1993-01-29 Matsushita Electric Ind Co Ltd 絶縁膜の形成方法及び絶縁膜形成装置
JPH11219950A (ja) * 1998-02-03 1999-08-10 Hitachi Ltd 半導体集積回路の製造方法並びにその製造装置
JP3505493B2 (ja) * 1999-09-16 2004-03-08 松下電器産業株式会社 半導体装置の製造方法
JP2004047950A (ja) * 2002-04-03 2004-02-12 Hitachi Kokusai Electric Inc 半導体装置の製造方法および半導体製造装置
JP4694108B2 (ja) * 2003-05-23 2011-06-08 東京エレクトロン株式会社 酸化膜形成方法、酸化膜形成装置および電子デバイス材料
JP2006286662A (ja) * 2005-03-31 2006-10-19 Toshiba Corp シリコン系被処理物の酸化処理方法、酸化処理装置および半導体装置の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002033381A (ja) * 2000-07-19 2002-01-31 Mitsubishi Electric Corp 素子分離絶縁膜の形成方法及び、半導体装置の製造方法
WO2002058130A1 (en) * 2001-01-22 2002-07-25 Tokyo Electron Limited Method for producing material of electronic device
JP2002280369A (ja) * 2001-03-19 2002-09-27 Canon Sales Co Inc シリコン基板の酸化膜形成装置及び酸化膜形成方法
WO2004023549A1 (ja) * 2002-08-30 2004-03-18 Fujitsu Amd Semiconductor Limited 半導体装置及びその製造方法
JP2005286339A (ja) * 2004-03-29 2005-10-13 Sharp Corp シリコンカーバイド基板上に二酸化シリコンを生成する高密度プラズマプロセス
JP2005294551A (ja) * 2004-03-31 2005-10-20 Toshiba Corp シリコン系被処理物の酸化処理方法、酸化処理装置および半導体装置の製造方法
WO2006073568A2 (en) * 2004-11-16 2006-07-13 Applied Materials, Inc. MULTI-LAYER HIGH QUALITY GATE DIELECTRIC FOR LOW-TEMPERATURE POLY-SILICON TFTs

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8404537B2 (en) 2008-03-28 2013-03-26 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US7858467B2 (en) 2008-03-28 2010-12-28 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US8097503B2 (en) 2008-03-28 2012-01-17 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
JP2009239157A (ja) * 2008-03-28 2009-10-15 Toshiba Corp 半導体装置の製造方法
WO2011040455A1 (ja) * 2009-09-30 2011-04-07 東京エレクトロン株式会社 選択的プラズマ窒化処理方法及びプラズマ窒化処理装置
JP2011077321A (ja) * 2009-09-30 2011-04-14 Tokyo Electron Ltd 選択的プラズマ窒化処理方法及びプラズマ窒化処理装置
US20120184111A1 (en) * 2009-09-30 2012-07-19 Tokyo Electron Limited Selective plasma nitriding method and plasma nitriding apparatus
JP2012216667A (ja) * 2011-03-31 2012-11-08 Tokyo Electron Ltd プラズマ処理方法
WO2018179038A1 (ja) * 2017-03-27 2018-10-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、プログラム及び基板処理装置
JPWO2018179038A1 (ja) * 2017-03-27 2019-11-07 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、プログラム及び基板処理装置
US10796900B2 (en) 2017-03-27 2020-10-06 Kokusai Electric Corporation Method of manufacturing semiconductor device
JP2025537362A (ja) * 2022-11-29 2025-11-14 アプライド マテリアルズ インコーポレイテッド インシトゥ統合処理による酸化共形性の改善
JP2025009917A (ja) * 2023-07-06 2025-01-20 ベイジン イータウン セミコンダクター テクノロジー カンパニー リミテッド 半導体ワークピースのための低圧酸化処理方法及び装置

Also Published As

Publication number Publication date
US20110017586A1 (en) 2011-01-27
WO2009093760A1 (ja) 2009-07-30
KR101249611B1 (ko) 2013-04-01
TW200941579A (en) 2009-10-01
KR20100119547A (ko) 2010-11-09

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