JP2009188348A5 - - Google Patents

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Publication number
JP2009188348A5
JP2009188348A5 JP2008029476A JP2008029476A JP2009188348A5 JP 2009188348 A5 JP2009188348 A5 JP 2009188348A5 JP 2008029476 A JP2008029476 A JP 2008029476A JP 2008029476 A JP2008029476 A JP 2008029476A JP 2009188348 A5 JP2009188348 A5 JP 2009188348A5
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JP
Japan
Prior art keywords
plasma
processing
insulating film
forming
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008029476A
Other languages
English (en)
Japanese (ja)
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JP2009188348A (ja
JP5374748B2 (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2008029476A external-priority patent/JP5374748B2/ja
Priority to JP2008029476A priority Critical patent/JP5374748B2/ja
Priority to KR1020107017596A priority patent/KR101248651B1/ko
Priority to PCT/JP2009/052447 priority patent/WO2009099254A1/ja
Priority to TW098103865A priority patent/TWI445083B/zh
Priority to US12/865,969 priority patent/US8034179B2/en
Publication of JP2009188348A publication Critical patent/JP2009188348A/ja
Publication of JP2009188348A5 publication Critical patent/JP2009188348A5/ja
Publication of JP5374748B2 publication Critical patent/JP5374748B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008029476A 2008-02-08 2008-02-08 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム Expired - Fee Related JP5374748B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008029476A JP5374748B2 (ja) 2008-02-08 2008-02-08 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム
US12/865,969 US8034179B2 (en) 2008-02-08 2009-02-06 Method for insulating film formation, storage medium from which information is readable with computer, and processing system
PCT/JP2009/052447 WO2009099254A1 (ja) 2008-02-08 2009-02-06 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム
TW098103865A TWI445083B (zh) 2008-02-08 2009-02-06 Insulation film formation method, the computer can read the memory media and processing system
KR1020107017596A KR101248651B1 (ko) 2008-02-08 2009-02-06 절연막의 형성 방법, 컴퓨터 판독 가능한 기억 매체 및 처리 시스템

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008029476A JP5374748B2 (ja) 2008-02-08 2008-02-08 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム

Publications (3)

Publication Number Publication Date
JP2009188348A JP2009188348A (ja) 2009-08-20
JP2009188348A5 true JP2009188348A5 (fi) 2011-03-10
JP5374748B2 JP5374748B2 (ja) 2013-12-25

Family

ID=41071262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008029476A Expired - Fee Related JP5374748B2 (ja) 2008-02-08 2008-02-08 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム

Country Status (1)

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JP (1) JP5374748B2 (fi)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5614407B2 (ja) 2009-08-17 2014-10-29 旭硝子株式会社 溶融ガラスの製造方法、ガラス溶融炉、ガラス製品の製造方法、及びガラス製品の製造装置
JP5663384B2 (ja) * 2011-04-19 2015-02-04 三菱電機株式会社 絶縁膜の製造方法
US8999773B2 (en) * 2012-04-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Processing method of stacked-layer film and manufacturing method of semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0443642A (ja) * 1990-06-11 1992-02-13 G T C:Kk ゲート絶縁膜の形成方法
KR100760078B1 (ko) * 2000-03-13 2007-09-18 다다히로 오미 산화막의 형성 방법, 질화막의 형성 방법, 산질화막의 형성 방법, 산화막의 스퍼터링 방법, 질화막의 스퍼터링 방법, 산질화막의 스퍼터링 방법, 게이트 절연막의 형성 방법

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