JP2009188349A5 - - Google Patents

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Publication number
JP2009188349A5
JP2009188349A5 JP2008029477A JP2008029477A JP2009188349A5 JP 2009188349 A5 JP2009188349 A5 JP 2009188349A5 JP 2008029477 A JP2008029477 A JP 2008029477A JP 2008029477 A JP2008029477 A JP 2008029477A JP 2009188349 A5 JP2009188349 A5 JP 2009188349A5
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JP
Japan
Prior art keywords
plasma
insulating film
processing
range
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008029477A
Other languages
English (en)
Japanese (ja)
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JP5374749B2 (ja
JP2009188349A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2008029477A external-priority patent/JP5374749B2/ja
Priority to JP2008029477A priority Critical patent/JP5374749B2/ja
Priority to KR1020107017596A priority patent/KR101248651B1/ko
Priority to PCT/JP2009/052447 priority patent/WO2009099254A1/ja
Priority to TW098103865A priority patent/TWI445083B/zh
Priority to US12/865,969 priority patent/US8034179B2/en
Publication of JP2009188349A publication Critical patent/JP2009188349A/ja
Publication of JP2009188349A5 publication Critical patent/JP2009188349A5/ja
Publication of JP5374749B2 publication Critical patent/JP5374749B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008029477A 2008-02-08 2008-02-08 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム Expired - Fee Related JP5374749B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008029477A JP5374749B2 (ja) 2008-02-08 2008-02-08 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム
US12/865,969 US8034179B2 (en) 2008-02-08 2009-02-06 Method for insulating film formation, storage medium from which information is readable with computer, and processing system
PCT/JP2009/052447 WO2009099254A1 (ja) 2008-02-08 2009-02-06 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム
TW098103865A TWI445083B (zh) 2008-02-08 2009-02-06 Insulation film formation method, the computer can read the memory media and processing system
KR1020107017596A KR101248651B1 (ko) 2008-02-08 2009-02-06 절연막의 형성 방법, 컴퓨터 판독 가능한 기억 매체 및 처리 시스템

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008029477A JP5374749B2 (ja) 2008-02-08 2008-02-08 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム

Publications (3)

Publication Number Publication Date
JP2009188349A JP2009188349A (ja) 2009-08-20
JP2009188349A5 true JP2009188349A5 (fi) 2011-03-17
JP5374749B2 JP5374749B2 (ja) 2013-12-25

Family

ID=41071263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008029477A Expired - Fee Related JP5374749B2 (ja) 2008-02-08 2008-02-08 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム

Country Status (1)

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JP (1) JP5374749B2 (fi)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5813303B2 (ja) 2009-11-20 2015-11-17 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP6419762B2 (ja) * 2016-09-06 2018-11-07 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP6456893B2 (ja) 2016-09-26 2019-01-23 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、記録媒体および基板処理装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100760078B1 (ko) * 2000-03-13 2007-09-18 다다히로 오미 산화막의 형성 방법, 질화막의 형성 방법, 산질화막의 형성 방법, 산화막의 스퍼터링 방법, 질화막의 스퍼터링 방법, 산질화막의 스퍼터링 방법, 게이트 절연막의 형성 방법
JP2005303074A (ja) * 2004-04-13 2005-10-27 Renesas Technology Corp 薄膜形成装置および薄膜形成方法

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