JP2009188349A5 - - Google Patents

Claims (11)

A CVD step of forming an insulating film with a film thickness in the range of 2 nm or more and 10 nm or less on the silicon exposed on the surface of the object by CVD;
A plasma reforming process for performing a reforming process on the insulating film using a plasma of a processing gas containing a rare gas and an oxygen gas in a plasma processing apparatus that introduces microwaves into a processing chamber using a planar antenna having a plurality of holes. Process,
And repeating the CVD process and the plasma modification treatment process to form an insulating film ,
In the plasma reforming process, a processing pressure is in a range of 6.7 Pa to 267 Pa, and a flow rate ratio of the oxygen gas to a total flow rate of the processing gas is in a range of 0.1% to 30%. In addition, an insulating film characterized by using plasma having a relatively high concentration of O ₂ ⁺ ions and O ( ¹ D ₂ ) radicals as active species in plasma compared to O ( ³ P ₂ ) radicals . Forming method.   2. The method for forming an insulating film according to claim 1, wherein a flow rate ratio of the oxygen gas to a total flow rate of the processing gas in the plasma reforming process is in a range of 0.1% to 5%. .   The method for forming an insulating film according to claim 2, wherein the processing pressure in the plasma modification processing step is in a range of 6.7 Pa to 67 Pa.   4. The method for forming an insulating film according to claim 3, wherein a processing time in one plasma reforming process is in a range of 5 seconds to 600 seconds.   5. The method of forming an insulating film according to claim 4, wherein the CVD process and the plasma modification treatment process are repeated until the total film thickness of the insulating film falls within a range of 4 nm to 1000 nm.   6. The method for forming an insulating film according to claim 1, wherein the CVD process and the plasma modification treatment process are repeated in a vacuum state.   7. The method for forming an insulating film according to claim 1, wherein a treatment temperature in the plasma reforming treatment step is within a range of 200 ° C. or more and 600 ° C. or less.   The method for forming an insulating film according to claim 1, wherein the insulating film is formed by a plasma CVD method or a thermal CVD method. Wherein the insulating film is, insulating film forming method according to claim 8, characterized in that a silicon oxide film which is deposited by CVD method using dichlorosilane and N _{2 O} as source gases. A computer-readable storage medium storing a control program that runs on a computer,
In the processing system having a plurality of processing chambers for performing predetermined processing on the object to be processed at the time of execution, the control program has a thickness of 2 nm or more and 10 nm by silicon on the silicon exposed on the surface of the object In a CVD process for forming an insulating film with a film thickness within the following range, and a plasma processing apparatus for introducing microwaves into the processing chamber by a planar antenna having a plurality of holes for the insulating film, a rare gas and an oxygen gas are used. And a plasma reforming process step of performing a reforming process using plasma of a processing gas containing, and causing a computer to control the processing system so as to perform a method of forming an insulating film that is repeatedly performed .
In the plasma reforming process, a processing pressure is in a range of 6.7 Pa to 267 Pa, and a flow rate ratio of the oxygen gas to a total flow rate of the processing gas is in a range of 0.1% to 30%. In addition, the active species in the plasma is a plasma having a relatively high concentration of O ₂ ⁺ ions and O ( ¹ D ₂ ) radicals compared to O ( ³ P ₂ ) radicals. A computer-readable storage medium. A processing system having a plurality of processing chambers for performing different processing on an object to be processed,
A CVD process for forming an insulating film with a film thickness within a range of 2 nm or more and 10 nm or less by a CVD method on silicon exposed on the surface of an object to be processed in the first processing chamber, and the first processing chamber In a different second processing chamber, a plasma of a processing gas containing a rare gas and an oxygen gas is formed by introducing a microwave into the second processing chamber with a planar antenna having a plurality of holes with respect to the insulating film. A control unit for controlling the first processing chamber and the second processing chamber so as to repeatedly perform a plasma reforming process step of performing a plasma reforming process using the plasma , and the control unit further includes: The process pressure of the plasma reforming process is in the range of 6.7 Pa to 267 Pa, and the flow rate ratio of the oxygen gas to the total flow of the process gas There is in the range of 30% 0.1% and plasma used is, as the active species in the ^{plasma, O} (3 _{P 2)} than in the _{radical, O} ^{2 +} ions and ^O (1 _{D 2} ) A processing system characterized by controlling the plasma so that the plasma has a relatively high radical concentration .