JP2009188348A5 - - Google Patents

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Publication number
JP2009188348A5
JP2009188348A5 JP2008029476A JP2008029476A JP2009188348A5 JP 2009188348 A5 JP2009188348 A5 JP 2009188348A5 JP 2008029476 A JP2008029476 A JP 2008029476A JP 2008029476 A JP2008029476 A JP 2008029476A JP 2009188348 A5 JP2009188348 A5 JP 2009188348A5
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JP
Japan
Prior art keywords
plasma
processing
insulating film
forming
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008029476A
Other languages
English (en)
Japanese (ja)
Other versions
JP5374748B2 (ja
JP2009188348A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2008029476A external-priority patent/JP5374748B2/ja
Priority to JP2008029476A priority Critical patent/JP5374748B2/ja
Priority to KR1020107017596A priority patent/KR101248651B1/ko
Priority to US12/865,969 priority patent/US8034179B2/en
Priority to TW098103865A priority patent/TWI445083B/zh
Priority to PCT/JP2009/052447 priority patent/WO2009099254A1/ja
Publication of JP2009188348A publication Critical patent/JP2009188348A/ja
Publication of JP2009188348A5 publication Critical patent/JP2009188348A5/ja
Publication of JP5374748B2 publication Critical patent/JP5374748B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008029476A 2008-02-08 2008-02-08 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム Expired - Fee Related JP5374748B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008029476A JP5374748B2 (ja) 2008-02-08 2008-02-08 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム
PCT/JP2009/052447 WO2009099254A1 (ja) 2008-02-08 2009-02-06 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム
US12/865,969 US8034179B2 (en) 2008-02-08 2009-02-06 Method for insulating film formation, storage medium from which information is readable with computer, and processing system
TW098103865A TWI445083B (zh) 2008-02-08 2009-02-06 Insulation film formation method, the computer can read the memory media and processing system
KR1020107017596A KR101248651B1 (ko) 2008-02-08 2009-02-06 절연막의 형성 방법, 컴퓨터 판독 가능한 기억 매체 및 처리 시스템

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008029476A JP5374748B2 (ja) 2008-02-08 2008-02-08 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム

Publications (3)

Publication Number Publication Date
JP2009188348A JP2009188348A (ja) 2009-08-20
JP2009188348A5 true JP2009188348A5 (enExample) 2011-03-10
JP5374748B2 JP5374748B2 (ja) 2013-12-25

Family

ID=41071262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008029476A Expired - Fee Related JP5374748B2 (ja) 2008-02-08 2008-02-08 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム

Country Status (1)

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JP (1) JP5374748B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5614407B2 (ja) 2009-08-17 2014-10-29 旭硝子株式会社 溶融ガラスの製造方法、ガラス溶融炉、ガラス製品の製造方法、及びガラス製品の製造装置
JP5663384B2 (ja) * 2011-04-19 2015-02-04 三菱電機株式会社 絶縁膜の製造方法
US8999773B2 (en) 2012-04-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Processing method of stacked-layer film and manufacturing method of semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0443642A (ja) * 1990-06-11 1992-02-13 G T C:Kk ゲート絶縁膜の形成方法
KR100760078B1 (ko) * 2000-03-13 2007-09-18 다다히로 오미 산화막의 형성 방법, 질화막의 형성 방법, 산질화막의 형성 방법, 산화막의 스퍼터링 방법, 질화막의 스퍼터링 방법, 산질화막의 스퍼터링 방법, 게이트 절연막의 형성 방법

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