JP5374748B2 - 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム - Google Patents

絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム Download PDF

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Publication number
JP5374748B2
JP5374748B2 JP2008029476A JP2008029476A JP5374748B2 JP 5374748 B2 JP5374748 B2 JP 5374748B2 JP 2008029476 A JP2008029476 A JP 2008029476A JP 2008029476 A JP2008029476 A JP 2008029476A JP 5374748 B2 JP5374748 B2 JP 5374748B2
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Japan
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plasma
processing
insulating film
gas
range
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JP2008029476A
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Japanese (ja)
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JP2009188348A5 (enExample
JP2009188348A (ja
Inventor
義郎 壁
淳一 北川
紀久夫 山部
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2008029476A priority Critical patent/JP5374748B2/ja
Priority to TW098103865A priority patent/TWI445083B/zh
Priority to US12/865,969 priority patent/US8034179B2/en
Priority to PCT/JP2009/052447 priority patent/WO2009099254A1/ja
Priority to KR1020107017596A priority patent/KR101248651B1/ko
Publication of JP2009188348A publication Critical patent/JP2009188348A/ja
Publication of JP2009188348A5 publication Critical patent/JP2009188348A5/ja
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  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
JP2008029476A 2008-02-08 2008-02-08 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム Expired - Fee Related JP5374748B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008029476A JP5374748B2 (ja) 2008-02-08 2008-02-08 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム
TW098103865A TWI445083B (zh) 2008-02-08 2009-02-06 Insulation film formation method, the computer can read the memory media and processing system
US12/865,969 US8034179B2 (en) 2008-02-08 2009-02-06 Method for insulating film formation, storage medium from which information is readable with computer, and processing system
PCT/JP2009/052447 WO2009099254A1 (ja) 2008-02-08 2009-02-06 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム
KR1020107017596A KR101248651B1 (ko) 2008-02-08 2009-02-06 절연막의 형성 방법, 컴퓨터 판독 가능한 기억 매체 및 처리 시스템

Applications Claiming Priority (1)

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JP2008029476A JP5374748B2 (ja) 2008-02-08 2008-02-08 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム

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JP2009188348A JP2009188348A (ja) 2009-08-20
JP2009188348A5 JP2009188348A5 (enExample) 2011-03-10
JP5374748B2 true JP5374748B2 (ja) 2013-12-25

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JP2008029476A Expired - Fee Related JP5374748B2 (ja) 2008-02-08 2008-02-08 絶縁膜の形成方法、コンピュータ読み取り可能な記憶媒体および処理システム

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101807320B1 (ko) 2009-08-17 2017-12-08 아사히 가라스 가부시키가이샤 용융 유리의 제조 방법, 유리 용융로, 유리 제품의 제조 방법, 및 유리 제품의 제조 장치
JP5663384B2 (ja) * 2011-04-19 2015-02-04 三菱電機株式会社 絶縁膜の製造方法
US8999773B2 (en) 2012-04-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Processing method of stacked-layer film and manufacturing method of semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0443642A (ja) * 1990-06-11 1992-02-13 G T C:Kk ゲート絶縁膜の形成方法
TW498544B (en) * 2000-03-13 2002-08-11 Tadahiro Ohmi Flash memory device, manufacturing and its dielectric film formation

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