JP2009164176A - Semiconductor light-emitting apparatus - Google Patents

Semiconductor light-emitting apparatus Download PDF

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JP2009164176A
JP2009164176A JP2007339330A JP2007339330A JP2009164176A JP 2009164176 A JP2009164176 A JP 2009164176A JP 2007339330 A JP2007339330 A JP 2007339330A JP 2007339330 A JP2007339330 A JP 2007339330A JP 2009164176 A JP2009164176 A JP 2009164176A
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circuit board
electrode
semiconductor light
light emitting
insulating substrate
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JP2009164176A5 (en
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Masaki Odawara
正樹 小田原
Masaru Aoki
大 青木
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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Priority to JP2007339330A priority Critical patent/JP2009164176A/en
Priority to KR20080129294A priority patent/KR20090072969A/en
Priority to CN 200810185048 priority patent/CN101471415B/en
Publication of JP2009164176A publication Critical patent/JP2009164176A/en
Publication of JP2009164176A5 publication Critical patent/JP2009164176A5/ja
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a side-view type LED lamp capable of increasing the strength of solder bonding to a circuit board on which the LED lamp is mounted, capable of making the high bonding strength available in a wide range from comparatively large size lamps to small size lamps, the LED lamp enabling low-cost manufacturing. <P>SOLUTION: An LED element mounting substrate 2 of a side view type LED lamp 1 is equipped with electrode portions 4d and 5d that extend into the insulating substrate 6 oppositely towards each other from each of the electrodes 4 and 5 provided on both ends of an insulating substrate 6. When the side-view type LED lamp 1 is mounted on a circuit board 7, the end surface 4e of the electrode portion 4d and the end surface 5e of the electrode portion 5d contribute to the increase of the strength of solder bonding. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は半導体発光装置に関するものであり、詳しくは、回路基板搭載状態において光照射方向が該基板面に対して略平行となるような半導体発光装置に関する。   The present invention relates to a semiconductor light-emitting device, and more particularly to a semiconductor light-emitting device in which a light irradiation direction is substantially parallel to the substrate surface when mounted on a circuit board.

回路基板実装状態において光照射方向が該基板面に対して略平行となるような半導体発光装置(以下、サイドビュータイプLEDランプと呼称する)として、図8〜図10に示すような構造のものがある。図8は1個のLED素子が実装されたサイドビュータイプLEDランプ(以下、LEDランプと略称する)を該LED素子側且つ回路基板搭載側から見た図、図9は図8のLEDランプをLED素子と反対側且つ回路基板搭載側から見た図、図10は2個のLED素子が実装されたLEDランプを該LED素子と反対側且つ回路基板搭載側から見た図である。   As a semiconductor light emitting device (hereinafter referred to as a side view type LED lamp) whose light irradiation direction is substantially parallel to the substrate surface in a circuit board mounted state, it has a structure as shown in FIGS. There is. FIG. 8 is a view of a side view type LED lamp (hereinafter abbreviated as “LED lamp”) on which one LED element is mounted as viewed from the LED element side and the circuit board mounting side, and FIG. 9 shows the LED lamp of FIG. FIG. 10 is a diagram viewed from the side opposite to the LED element and the circuit board mounting side, and FIG. 10 is a diagram illustrating the LED lamp on which two LED elements are mounted viewed from the side opposite to the LED element and the circuit board mounting side.

LEDランプ50は図8及び図9に示すように、主にLED素子実装用基板51、LED素子52、及び封止樹脂53で構成され、LED素子実装用基板51上に実装されたLED素子52を透光性を有する封止樹脂53で樹脂封止したものである。   As shown in FIGS. 8 and 9, the LED lamp 50 is mainly composed of an LED element mounting substrate 51, an LED element 52, and a sealing resin 53, and the LED element 52 mounted on the LED element mounting substrate 51. Is sealed with a sealing resin 53 having translucency.

具体的には、LED素子実装用基板51は絶縁基板54の一方の面に一対の電極部55a、56aが形成され、他方の面に一対の電極部55b、56bが形成され、絶縁基板54を挟んで対向する電極部55a、55b及び電極部56a、56b同士が夫々、絶縁基板54の対向する端面に形成された電極部55c、56cを介して接続されている。   Specifically, the LED element mounting substrate 51 has a pair of electrode portions 55a and 56a formed on one surface of the insulating substrate 54, and a pair of electrode portions 55b and 56b formed on the other surface. The electrode portions 55a and 55b and the electrode portions 56a and 56b opposed to each other are connected to each other through electrode portions 55c and 56c formed on the opposing end surfaces of the insulating substrate 54, respectively.

そして、電極部56a上にLED素子52が導電部材(図示せず)を介して載置されてLED素子52の下部電極と電極部56aの電気的導通が図られると共に、LED素子52の上部電極と電極部55aがボンディングワイヤ57で接続されて電気的導通が図られ、LED素子52及びボンディングワイヤ57が透光性を有する封止樹脂53によって樹脂封止されたものである。   Then, the LED element 52 is placed on the electrode portion 56a via a conductive member (not shown), and the lower electrode of the LED element 52 and the electrode portion 56a are electrically connected, and the upper electrode of the LED element 52 is also provided. And the electrode portion 55a are connected by a bonding wire 57 to achieve electrical conduction, and the LED element 52 and the bonding wire 57 are resin-sealed with a sealing resin 53 having translucency.

このとき、LED素子実装用基板51の、前記電極部55c、56cが形成された端面とは異なる端面58a、58bは、LED素子52の実装及び封止樹脂53による樹脂封止が完了した多数個取り基板から個々のLEDランプに個片化するときの切断面である。   At this time, the end surfaces 58a and 58b of the LED element mounting substrate 51, which are different from the end surfaces on which the electrode portions 55c and 56c are formed, are a large number of the LED elements 52 mounted and the resin sealing with the sealing resin 53 completed. It is a cut surface when dividing into individual LED lamps from a pick-up board.

そのため、電極部55a、55b、55cで構成された電極55の端面55d、55e及び電極部56a、56b、56cで構成された電極56の端面56d、56eは夫々電極55及び電極56の切断面がそのまま露出しており、半田接合時に半田の濡れ性が良くない。そこで、回路基板に上記サイドビュータイプLEDランプを半田接合する場合、以下のような問題が生じる。   Therefore, the end surfaces 55d and 55e of the electrode 55 constituted by the electrode portions 55a, 55b and 55c and the end surfaces 56d and 56e of the electrode 56 constituted by the electrode portions 56a, 56b and 56c are cut surfaces of the electrode 55 and the electrode 56, respectively. It is exposed as it is, and the solder wettability is not good when soldering. Therefore, when soldering the side-view type LED lamp to the circuit board, the following problems occur.

回路基板に対するLEDランプ50の半田接合は、回路基板の電極パッドと、回路基板に略垂直な、LEDランプ50のLED素子実装用基板51の電極部55a、55b、55cの3面からなる電極55及び電極部56a、56b、56cの3面からなる電極56を半田フィレットのみで接合される。そのため、接合強度が弱いという欠点がある。   The soldering of the LED lamp 50 to the circuit board is performed by three electrodes 55a, 55b, and 55c of the LED element mounting board 51 of the LED lamp 50 that are substantially perpendicular to the circuit board. And the electrode 56 which consists of three surfaces of electrode part 56a, 56b, 56c is joined only by a solder fillet. Therefore, there is a drawback that the bonding strength is weak.

また、2個のLED素子が実装されたLEDランプ50の場合は、図10のように、電極55と電極56の間に1面からなる別の電極59を設ける必要がある。すると、回路基板に対するLEDランプ50の半田接合において、電極59の半田接合面積が電極55、56に比べて小さいため接合強度も電極55、56よりもさらに弱くなる。   In the case of the LED lamp 50 on which two LED elements are mounted, it is necessary to provide another electrode 59 consisting of one surface between the electrode 55 and the electrode 56 as shown in FIG. Then, in the solder bonding of the LED lamp 50 to the circuit board, since the solder bonding area of the electrode 59 is smaller than that of the electrodes 55 and 56, the bonding strength is further weaker than that of the electrodes 55 and 56.

そして、実装されるLED素子の数が増えるにつれて電極数も増加して電極1個当たりの面積が減少し、半田接合強度がますます弱くなる。   As the number of LED elements to be mounted increases, the number of electrodes also increases, the area per electrode decreases, and the solder joint strength becomes weaker.

また、上記したように、LED素子実装用基板51の電極55の端面55d、55e及び電極56の端面56d、56eは半田の濡れ性が良くないために半田接合の接合強度の安定性が悪く、面積も小さいために接合強度の向上には大きく寄与するものではない。   Further, as described above, the end faces 55d and 55e of the electrode 55 of the LED element mounting substrate 51 and the end faces 56d and 56e of the electrode 56 are poor in solder wettability, so that the solder joint strength is poor, Since the area is small, it does not greatly contribute to the improvement of the bonding strength.

更に、LEDランプ50の小型化によりますます電極の小面積化が進み、半田塗布量の小量化も伴って更に接合強度が弱くなる傾向にある。   Further, as the LED lamp 50 is reduced in size, the area of the electrode is further reduced, and the bonding strength tends to be further reduced as the amount of applied solder is reduced.

そこで、電極55、56と共に、電極55の端面55d、55e及び電極56の端面56d、56eにも電極55、56と同様に銅メッキ層/ニッケルメッキ層/金メッキ層の3層構造を設けることによって半田接合の接合強度の向上を図る提案がなされている(例えば、特許文献1参照。)。
特開平8−242019号公報
Therefore, in addition to the electrodes 55 and 56, the end surfaces 55d and 55e of the electrode 55 and the end surfaces 56d and 56e of the electrode 56 are provided with a three-layer structure of copper plating layer / nickel plating layer / gold plating layer in the same manner as the electrodes 55 and 56. Proposals have been made to improve the bonding strength of solder bonding (see, for example, Patent Document 1).
Japanese Patent Laid-Open No. 8-242019

ところで、上記提案された、電極55の端面55d、55e及び電極56の端面56d、56eに金メッキ層を設ける方法は、回路基板に対するLEDランプ50の搭載にあたってはその金メッキ層の部分の大半は半田付けが施されないのが実情であり、接合強度の向上効果はほとんど望めない。   By the way, the method of providing a gold plating layer on the end faces 55d and 55e of the electrode 55 and the end faces 56d and 56e of the electrode 56 proposed above is that most of the gold plating layer is soldered when the LED lamp 50 is mounted on the circuit board. In fact, the effect of improving the bonding strength is hardly expected.

そこで、本発明は上記問題に鑑みて創案なされたもので、その目的とするところは、回路基板に対する半田接合の接合強度が強く、且つ接合強度の強化が比較的大きいサイズから小型サイズまで幅広いサイズのLEDランプに対して可能であり、しかも低コストで製造することができるサイドビュータイプLEDランプを提供することにある。   Accordingly, the present invention was devised in view of the above problems, and the object of the present invention is to provide a wide range of sizes from a large size to a small size, which has a strong bonding strength for solder bonding to a circuit board and a relatively high bonding strength. It is possible to provide a side-view type LED lamp that can be manufactured at a low cost.

上記課題を解決するために、本発明の請求項1に記載された発明は、半導体発光素子を光源とし、回路基板搭載状態において光照射方向が該回路基板面に対して略平行となるような半導体発光装置であって、前記半導体発光装置は絶縁基板の一方の面から前記絶縁基板の端面を通って他方の面に繋がる複数の導体層が形成され、前記導体層のうち少なくとも複数は前記端面側に位置する前記導体層から前記絶縁基板中に延長された導体層を有すると共に前記絶縁基板中に延長された導体層の前記絶縁基板から露出した面に半田濡れ性を向上させるための導電部材からなるメッキ層が設けられ、前記半導体発光装置の前記回路基板搭載時に前記メッキ層と前記回路基板の間で半田接合が行われることを特徴とするものである。   In order to solve the above-mentioned problem, the invention described in claim 1 of the present invention uses a semiconductor light-emitting element as a light source, and the light irradiation direction is substantially parallel to the circuit board surface when mounted on the circuit board. A semiconductor light emitting device, wherein the semiconductor light emitting device is formed with a plurality of conductor layers connected from one surface of the insulating substrate to the other surface through an end surface of the insulating substrate, and at least a plurality of the conductor layers are the end surfaces A conductive member having a conductor layer extended into the insulating substrate from the conductor layer positioned on the side and improving the solder wettability on the surface of the conductor layer extended into the insulating substrate exposed from the insulating substrate A plating layer is provided, and solder bonding is performed between the plating layer and the circuit board when the circuit board is mounted in the semiconductor light emitting device.

また、本発明の請求項2に記載された発明は、請求項1において、前記絶縁基板中に延長された導体層は、該導体層が繋がった、前記絶縁基板の両面に位置する導体層の中間位置に形成されていることを特徴とするものである。   According to a second aspect of the present invention, in the first aspect, the conductor layer extended into the insulating substrate is a conductor layer located on both sides of the insulating substrate, to which the conductor layer is connected. It is characterized by being formed at an intermediate position.

また、本発明の請求項3に記載された発明は、半導体発光素子を光源とし、回路基板搭載状態において光照射方向が該回路基板面に対して略平行となるような半導体発光装置であって、前記半導体発光装置は絶縁基板の一方の面から前記絶縁基板の端面を通って他方の面に繋がる複数の導体層が形成され、前記絶縁基板は該絶縁基板の前記導体層が設けられた一方の面側から他方の面側に至る貫通溝が形成され、前記貫通溝の内周面に導電部材からなるメッキ層が設けられ、前記半導体発光装置の前記回路基板搭載時に前記メッキ層と前記回路基板の間で半田接合が行われることを特徴とするものである。   According to a third aspect of the present invention, there is provided a semiconductor light emitting device using a semiconductor light emitting element as a light source and having a light emission direction substantially parallel to the surface of the circuit board when mounted on the circuit board. The semiconductor light emitting device has a plurality of conductor layers connected from one surface of the insulating substrate through the end surface of the insulating substrate to the other surface, and the insulating substrate is provided with the conductor layer of the insulating substrate. A through groove extending from one surface side to the other surface side is formed, and a plated layer made of a conductive member is provided on an inner peripheral surface of the through groove, and the plated layer and the circuit are mounted when the circuit board of the semiconductor light emitting device is mounted. Solder bonding is performed between the substrates.

また、本発明の請求項4に記載された発明は、半導体発光素子を光源とし、回路基板搭載状態において光照射方向が該回路基板面に対して略平行となるような半導体発光装置であって、前記半導体発光装置は絶縁基板の一方の面から前記絶縁基板の端面を通って他方の面に繋がる複数の導体層が形成され、前記絶縁基板は該絶縁基板の前記導体層が設けられた一方の面側から他方の面側に至る貫通溝が形成され、前記貫通溝の内周面に導電部材からなるメッキ層が設けられると共に前記貫通溝内に導電性部材が充填されて溝埋めが施され、前記半導体発光装置の前記回路基板搭載時に前記メッキ層と前記回路基板が前記溝埋め部材を介して半田接合されることを特徴とするものである。   According to a fourth aspect of the present invention, there is provided a semiconductor light emitting device using a semiconductor light emitting element as a light source and having a light irradiation direction substantially parallel to the surface of the circuit board when mounted on the circuit board. The semiconductor light emitting device has a plurality of conductor layers connected from one surface of the insulating substrate through the end surface of the insulating substrate to the other surface, and the insulating substrate is provided with the conductor layer of the insulating substrate. A through groove extending from one surface side to the other surface side is formed, a plated layer made of a conductive member is provided on the inner peripheral surface of the through groove, and the through groove is filled with a conductive member to fill the groove. The plating layer and the circuit board are solder-bonded via the groove filling member when the circuit board is mounted on the semiconductor light emitting device.

また、本発明の請求項5に記載された発明は、半導体発光素子を光源とし、回路基板搭載状態において光照射方向が該回路基板面に対して略平行となるような半導体発光装置であって、前記半導体発光装置は絶縁基板の一方の面から前記絶縁基板の端面を通って他方の面に繋がる複数の導体層が形成され、前記絶縁基板は該絶縁基板の前記導体層が設けられた一方の面側から他方の面側の途中に至る非貫通溝が形成され、前記非貫通溝の内周面に導電部材からなるメッキ層が設けられ、前記半導体発光装置の前記回路基板搭載時に前記メッキ層と前記回路基板の間で半田接合が行われることを特徴とするものである。   According to a fifth aspect of the present invention, there is provided a semiconductor light emitting device using a semiconductor light emitting element as a light source and having a light irradiation direction substantially parallel to the surface of the circuit board when mounted on the circuit board. The semiconductor light emitting device has a plurality of conductor layers connected from one surface of the insulating substrate through the end surface of the insulating substrate to the other surface, and the insulating substrate is provided with the conductor layer of the insulating substrate. A non-penetrating groove extending from the surface side to the other surface side is formed, and a plating layer made of a conductive member is provided on an inner peripheral surface of the non-penetrating groove, and the plating is performed when the circuit board is mounted on the semiconductor light emitting device. Solder bonding is performed between the layer and the circuit board.

また、本発明の請求項6に記載された発明は、半導体発光素子を光源とし、回路基板搭載状態において光照射方向が該回路基板面に対して略平行となるような半導体発光装置であって、前記半導体発光装置は絶縁基板の一方の面から前記絶縁基板の端面を通って他方の面に繋がる複数の導体層が形成され、前記絶縁基板は該絶縁基板の前記導体層が設けられた一方の面側から他方の面側の途中に至る非貫通溝が形成され、前記非貫通溝の内周面に導電部材からなるメッキ層が設けられると共に前記非貫通溝内に導電性部材が充填されて溝埋めが施され、前記半導体発光装置の前記回路基板搭載時に前記メッキ層と前記回路基板が前記溝埋め部材を介して半田接合されることを特徴とするものである。   According to a sixth aspect of the present invention, there is provided a semiconductor light emitting device using a semiconductor light emitting element as a light source and having a light irradiation direction substantially parallel to the surface of the circuit board when mounted on the circuit board. The semiconductor light emitting device has a plurality of conductor layers connected from one surface of the insulating substrate through the end surface of the insulating substrate to the other surface, and the insulating substrate is provided with the conductor layer of the insulating substrate. A non-penetrating groove extending from the surface side to the other surface side is formed, a plating layer made of a conductive member is provided on the inner peripheral surface of the non-penetrating groove, and the non-penetrating groove is filled with a conductive member. The groove is filled, and the plating layer and the circuit board are solder-bonded via the groove filling member when the circuit board is mounted on the semiconductor light emitting device.

本発明の半導体発光装置は、絶縁基板の一方の面から前記絶縁基板の端面を通って他方の面に繋がる複数の導体層を形成すると共に導体層の端面側から絶縁基板中に延びる導体層を設け、絶縁基板中に延長された導体層の絶縁基板から露出した面に導電部材からなるメッキ層を設けた。   The semiconductor light-emitting device of the present invention has a plurality of conductor layers connected from one surface of the insulating substrate to the other surface through the end surface of the insulating substrate, and a conductor layer extending into the insulating substrate from the end surface side of the conductor layer. A plated layer made of a conductive member was provided on the surface of the conductive layer extended in the insulating substrate and exposed from the insulating substrate.

あるいは、絶縁基板の一方の面から前記絶縁基板の端面を通って他方の面に繋がる複数の導体層を形成すると共に絶縁基板の導体層が設けられた一方の面側から他方の面側に至る貫通溝又は一方の面側から他方の面側の途中に至る非貫通溝を形成し、溝の内周面に導電部材からなるメッキ層を設けた。   Alternatively, a plurality of conductive layers connected from one surface of the insulating substrate to the other surface through the end surface of the insulating substrate are formed and from one surface side where the conductive layer of the insulating substrate is provided to the other surface side. A through groove or a non-through groove extending from one surface side to the other surface side was formed, and a plating layer made of a conductive member was provided on the inner peripheral surface of the groove.

そして、半導体発光装置を回路基板に搭載する際に、半導体発光装置のメッキ層と回路基板の間で半田接合が行われるようにした。   Then, when the semiconductor light emitting device is mounted on the circuit board, solder bonding is performed between the plating layer of the semiconductor light emitting device and the circuit board.

その結果、回路基板に対する半田接合の接合強度が強く、且つ接合強度の強化が比較的大きいサイズから小型サイズまで幅広いサイズの半導体発光装置に対して可能であり、しかも低コストで製造することができるサイドビュータイプの半導体発光装置を実現することができた。   As a result, the bonding strength of the solder bonding to the circuit board is strong, and the bonding strength can be strengthened for a wide range of semiconductor light emitting devices from a relatively large size to a small size, and can be manufactured at low cost. A side-view type semiconductor light emitting device could be realized.

以下、この発明の好適な実施形態を図1〜図7を参照しながら、詳細に説明する(同一部分については同じ符号を付す)。尚、以下に述べる実施形態は、本発明の好適な具体例であるから、技術的に好ましい種々の限定が付されているが、本発明の範囲は、以下の説明において特に本発明を限定する旨の記載がない限り、これらの実施形態に限られるものではない。   Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. 1 to 7 (the same parts are given the same reference numerals). The embodiments described below are preferable specific examples of the present invention, and thus various technically preferable limitations are given. However, the scope of the present invention particularly limits the present invention in the following description. Unless stated to the effect, the present invention is not limited to these embodiments.

図1は本発明に係る実施例1の斜視図であり、LED素子を実装した側と反対側且つ回路基板搭載側から見た図である。本実施例のサイドビュータイプLEDランプ(以下、LEDランプと略称する)1は主にLED素子実装用基板2、LED素子(図示せず)、及び封止樹脂3で構成され、LED素子実装用基板2に実装されたLED素子を透光性を有する封止樹脂3で樹脂封止したものである。なお、本実施例は1個のLED素子が実装されたものである。   FIG. 1 is a perspective view of Example 1 according to the present invention, as viewed from the side opposite to the side on which the LED element is mounted and from the circuit board mounting side. A side view type LED lamp (hereinafter abbreviated as LED lamp) 1 of this embodiment is mainly composed of an LED element mounting substrate 2, an LED element (not shown), and a sealing resin 3. The LED element mounted on the substrate 2 is resin-sealed with a sealing resin 3 having translucency. In this embodiment, one LED element is mounted.

そして、図示していないが、LED素子実装用基板2上に位置する一対の電極4、5の一方の電極5上にLED素子が導電部材を介して載置されてLED素子の下部電極と電極5の電気的導通が図られると共に、LED素子の上部電極と電極4がボンディングワイヤで接続されて電気的導通が図られ、LED素子及びボンディングワイヤが封止樹脂3によって樹脂封止されている。   Although not shown, the LED element is placed on one electrode 5 of the pair of electrodes 4 and 5 located on the LED element mounting substrate 2 via a conductive member, and the lower electrode and the electrode of the LED element 5, the upper electrode of the LED element and the electrode 4 are connected by a bonding wire to achieve electrical conduction, and the LED element and the bonding wire are sealed with a sealing resin 3.

本発明のLEDランプ1は、該LEDランプ1を半田接合によって回路基板に搭載する際に高い接合強度が得られるように、LEDランプ1を構成するLED素子実装用基板2の構造に工夫を施したものである。以下、LED素子実装用基板2について詳細に説明する。   In the LED lamp 1 of the present invention, the structure of the LED element mounting substrate 2 constituting the LED lamp 1 is devised so that a high bonding strength can be obtained when the LED lamp 1 is mounted on a circuit board by solder bonding. It is a thing. Hereinafter, the LED element mounting substrate 2 will be described in detail.

LED素子実装用基板2は絶縁基板6の一方の面に一対の電極部4a、5aが形成され、他方の面に一対の電極部4b、5bが形成され、絶縁基板6を挟んで対向する電極部4a、4b及び電極部5a、5b同士が夫々、絶縁基板6の対向する端面に形成された電極部4c、5cを介して接続されている。   The LED element mounting substrate 2 has a pair of electrode portions 4a and 5a formed on one surface of an insulating substrate 6, and a pair of electrode portions 4b and 5b formed on the other surface. The parts 4a and 4b and the electrode parts 5a and 5b are connected to each other via electrode parts 4c and 5c formed on the opposing end surfaces of the insulating substrate 6, respectively.

そして、電極部4c及び電極部5cの夫々から互いに対向する方向に向かって電極部4d及び電極部5dが絶縁基板6中に延びている。このとき、電極部4dは電極部4aと4bの中間位置にあり、電極部5dは電極部5aと電極部5bの中間位置にある。   And the electrode part 4d and the electrode part 5d are extended in the insulated substrate 6 toward the mutually opposing direction from each of the electrode part 4c and the electrode part 5c. At this time, the electrode part 4d is at an intermediate position between the electrode parts 4a and 4b, and the electrode part 5d is at an intermediate position between the electrode part 5a and the electrode part 5b.

以上より、電極部4a、4b、4c、4dは互いに繋がって電極4を構成し、電極部5a、5b、5c、5dは互いに繋がって電極5を構成している。電極5はLED素子の下部電極と電気的に接続され、電極4はLED素子の上部電極と電気的に接続されている。   As described above, the electrode parts 4a, 4b, 4c, and 4d are connected to each other to form the electrode 4, and the electrode parts 5a, 5b, 5c, and 5d are connected to each other to form the electrode 5. The electrode 5 is electrically connected to the lower electrode of the LED element, and the electrode 4 is electrically connected to the upper electrode of the LED element.

このとき、電極4の一対の端面4e、4f及び電極5の一対の端面5e、5fはいずれもLED素子の実装及び封止樹脂3による樹脂封止が完了した多数個取り基板から個々のLEDランプ1に個片化するときの切断面である。そのため、電極4の端面4e、4f及び電極5の端面5e、5fは端面処理を施さないと夫々電極4及び電極5の切断面がそのまま露出した状態となる。   At this time, each of the pair of end faces 4e, 4f of the electrode 4 and the pair of end faces 5e, 5f of the electrode 5 is an individual LED lamp from a multi-chip substrate in which mounting of the LED element and resin sealing with the sealing resin 3 is completed. It is a cut surface when dividing into 1 piece. Therefore, the end surfaces 4e and 4f of the electrode 4 and the end surfaces 5e and 5f of the electrode 5 are in a state where the cut surfaces of the electrode 4 and the electrode 5 are exposed as they are unless the end surface treatment is performed.

ところで、電極4及び電極5はいずれも導電性を有する金属薄膜で構成され、通常銅箔を用いることが多い。銅箔は膜厚10μm以上のものを使用するのが一般的であり、絶縁基板となるプリプレグ材や接着シートと最大同程度の厚みまでとされる。膜厚が厚くなるとボイドが発生する可能性が大きくなる。   By the way, both the electrode 4 and the electrode 5 are comprised with the metal thin film which has electroconductivity, and a copper foil is normally used in many cases. The copper foil generally has a film thickness of 10 μm or more, and has a maximum thickness equivalent to that of a prepreg material or an adhesive sheet serving as an insulating substrate. As the film thickness increases, the possibility of voids increases.

電極4及び電極5を構成する銅箔自体は半田の濡れ性が良くないために半田接合の接合強度が弱い。そこで、銅箔上にニッケルメッキ層が形成され、更にその上に金メッキ層又は銀メッキ層が形成されている。それと同様に、電極4の端面4e、4f及び電極5の端面5e、5fにも銅メッキ層/ニッケルメッキ層/金メッキ層又は銀メッキ層が形成されている。   Since the copper foil itself constituting the electrode 4 and the electrode 5 does not have good solder wettability, the bonding strength of solder bonding is weak. Therefore, a nickel plating layer is formed on the copper foil, and a gold plating layer or a silver plating layer is further formed thereon. Similarly, the copper plating layer / nickel plating layer / gold plating layer or silver plating layer is also formed on the end surfaces 4e and 4f of the electrode 4 and the end surfaces 5e and 5f of the electrode 5.

これにより、電極4及び電極5の、絶縁基板6から露出した部分の全面に亘って最上層が金メッキ層又は銀メッキ層となっており、半田の濡れ性が良好な状態が確保されている。   Thereby, the uppermost layer is a gold plating layer or a silver plating layer over the entire surface of the electrode 4 and the electrode 5 exposed from the insulating substrate 6, and a state in which the solder wettability is good is ensured.

上記構造のLEDランプ1を半田接合によって回路基板に搭載した状態を図2(図1のA−A断面を使用)に示している。LEDランプ1を搭載する回路基板7は、LEDランプ1が搭載される側の面の、LEDランプ1を搭載したときに該LEDランプ1のLED素子実装用基板2に設けられた電極4及び電極5の夫々に対応する位置に電極パッド7a、7bが設けられている。   FIG. 2 (using the AA cross section of FIG. 1) shows a state in which the LED lamp 1 having the above structure is mounted on a circuit board by solder bonding. The circuit board 7 on which the LED lamp 1 is mounted includes an electrode 4 and an electrode provided on the LED element mounting board 2 of the LED lamp 1 when the LED lamp 1 is mounted on the surface on which the LED lamp 1 is mounted. Electrode pads 7 a and 7 b are provided at positions corresponding to the respective positions 5.

そして、LEDランプ1が回路基板7上に該LEDランプ1の光照射方向が回路基板7に対して略平行となるように載置されている。このとき、回路基板7の電極パット7a上にLED素子実装用基板2の電極4が位置し、回路基板7の電極パット7b上にLED素子実装用基板2の電極5が位置している。   The LED lamp 1 is placed on the circuit board 7 so that the light irradiation direction of the LED lamp 1 is substantially parallel to the circuit board 7. At this time, the electrode 4 of the LED element mounting board 2 is positioned on the electrode pad 7 a of the circuit board 7, and the electrode 5 of the LED element mounting board 2 is positioned on the electrode pad 7 b of the circuit board 7.

電極4と電極パッド7a、電極5と電極パッド7bは夫々半田接合され、LED素子の下部電極が電極5を介して電極パッド7bに電気的に接続されていると共に、LED素子の上部電極が電極4を介して電極パッド7aに電気的に接続されている。   The electrode 4 and the electrode pad 7a, the electrode 5 and the electrode pad 7b are solder-bonded, respectively, and the lower electrode of the LED element is electrically connected to the electrode pad 7b via the electrode 5, and the upper electrode of the LED element is the electrode 4 is electrically connected to the electrode pad 7a.

電極4の、電極パッド7aに対して半田接合が施される部分は、電極パッド7aに垂直な電極部4a、4b、4c及び電極パッド7aに水平な端面4eであり、そのうち電極部4a、4b、4cに対しては半田フィレット8aで接合され、端面4eに対しては電極パッド7aとの間に位置する半田8bによって接合されている。   The portions of the electrode 4 that are soldered to the electrode pad 7a are electrode portions 4a, 4b, and 4c perpendicular to the electrode pad 7a and an end face 4e that is horizontal to the electrode pad 7a, of which the electrode portions 4a and 4b 4c is joined by a solder fillet 8a, and the end face 4e is joined by a solder 8b positioned between the electrode pad 7a.

同様に、電極5の、電極パッド7bに対して半田接合が施される部分は、電極パッド7bに垂直な電極部5a、5b、5c及び電極パッド7bに水平な端面5eであり、そのうち電極部5a、5b、5cに対しては半田フィレット8aで接合され、端面5eに対しては電極パッド7bとの間に位置する半田8bによって接合されている。   Similarly, portions of the electrode 5 where solder bonding is performed to the electrode pad 7b are electrode portions 5a, 5b, 5c perpendicular to the electrode pad 7b and an end surface 5e horizontal to the electrode pad 7b, of which the electrode portion 5a, 5b and 5c are joined by a solder fillet 8a, and the end face 5e is joined by a solder 8b positioned between the electrode pad 7b.

従来の半田接続においては、電極4の、電極パッド7aに対して半田接合が施される部分は電極パッド7aに垂直な電極部4a、4b、4cのみの半田フィレットによる接合であり、電極5の電極パッド7bに対して半田接合が施される部分は電極パッド7bに垂直な電極部5a、5b、5cのみの半田フィレットによる接合であった。   In the conventional solder connection, the portion of the electrode 4 where the solder bonding is performed with respect to the electrode pad 7a is the bonding by the solder fillet of only the electrode portions 4a, 4b, 4c perpendicular to the electrode pad 7a. The portion where solder bonding is performed on the electrode pad 7b is bonding by the solder fillet of only the electrode portions 5a, 5b, and 5c perpendicular to the electrode pad 7b.

それに対し、本発明のLEDランプでは、上記半田接合部に加えて電極4、5の夫々の端面4e、5eも半田接合に寄与している。特に、電極4を構成する電極部4d及び電極5を構成する電極部5dは従来のLEDランプで設けられていない電極部であり、これら新規に設けられた電極部4d、5dの端面4e、5eが半田接合に係ることにより回路基板7に対して従来のLEDランプよりもより強力な接合強度を得ることができる。   On the other hand, in the LED lamp of the present invention, the end faces 4e and 5e of the electrodes 4 and 5 contribute to the solder joint in addition to the solder joint portion. In particular, the electrode portion 4d constituting the electrode 4 and the electrode portion 5d constituting the electrode 5 are electrode portions not provided in the conventional LED lamp, and the end faces 4e, 5e of the newly provided electrode portions 4d, 5d are provided. As a result of solder bonding, stronger bonding strength than the conventional LED lamp can be obtained with respect to the circuit board 7.

また、電極部4d、5dの端面4e、5eは夫々回路基板7の電極パッド7a、7bの中央部に位置するため、電極部4dと電極パッド7aの半田接合及び電極部5dと電極パッド7bの半田接合の強化に大いに貢献するものである。   Further, since the end faces 4e and 5e of the electrode portions 4d and 5d are located at the center portions of the electrode pads 7a and 7b of the circuit board 7, respectively, solder bonding between the electrode portions 4d and the electrode pads 7a and between the electrode portions 5d and 7b. This greatly contributes to the strengthening of solder joints.

電極4、5を形成する銅箔は膜厚が厚い方が半田接合の接合強度を高くすることができるが、電極部4d、5dの端面4e、5eが夫々回路基板7の電極パッド7a、7bの中央部に位置することにより、膜厚が薄くても高い半田接合の接合強度を得ることが可能である。   The copper foil that forms the electrodes 4 and 5 can have higher solder joint strength when the film thickness is thicker, but the end faces 4e and 5e of the electrode portions 4d and 5d are electrode pads 7a and 7b of the circuit board 7, respectively. Therefore, it is possible to obtain a high solder joint strength even if the film thickness is small.

図3は本発明に係る実施例2の斜視図であり、LED素子を実装した側と反対側且つ回路基板搭載側から見た図である。本実施例は2個のLED素子が実装されたLEDランプである。   FIG. 3 is a perspective view of Example 2 according to the present invention, as viewed from the side opposite to the side on which the LED element is mounted and from the circuit board mounting side. The present embodiment is an LED lamp on which two LED elements are mounted.

本実施例は上記実施例1に対して、LEDランプ1のLED素子実装用基板2に形成された電極4の電極部4cと電極5の電極部5cの間、及び電極4の電極部4dと電極5の電極部5dの間に夫々電極部9b及び電極部9dが位置している。なお、電極部9b及び電極部9dは絶縁基板6内で繋がって電極9を構成している。   The present embodiment is different from the first embodiment in that the electrode portion 4c of the electrode 4 and the electrode portion 5c of the electrode 5 formed on the LED element mounting substrate 2 of the LED lamp 1 and the electrode portion 4d of the electrode 4 Between the electrode part 5d of the electrode 5, the electrode part 9b and the electrode part 9d are located, respectively. The electrode portion 9b and the electrode portion 9d are connected in the insulating substrate 6 to constitute the electrode 9.

一般に、電極9は銅箔層/ニッケルメッキ層/金メッキ層の3層構造で構成され、電極9の電極部9bの端面9e、9f及び電極部9dの端面9e、9fはいずれも銅メッキ層/ニッケルメッキ層/金メッキ層の3層構造で構成される。   In general, the electrode 9 has a three-layer structure of copper foil layer / nickel plating layer / gold plating layer, and the end surfaces 9e and 9f of the electrode portion 9b of the electrode 9 and the end surfaces 9e and 9f of the electrode portion 9d are both copper plated layer / It has a three-layer structure of nickel plating layer / gold plating layer.

本実施例のLEDランプ1を回路基板7に搭載した状態を図4(図3のB−B断面を使用)に示している。予め、回路基板7のLEDランプ1が搭載される側の面の、LEDランプ1を搭載したときに該LEDランプ1のLED素子実装用基板2に設けられた電極4及び電極5の夫々に対応する位置に電極パッド7a、7bが設けられると共に、電極9に対応する位置にも電極パッド7cが設けられる。   A state in which the LED lamp 1 of this embodiment is mounted on the circuit board 7 is shown in FIG. 4 (using the BB cross section of FIG. 3). Corresponding to the electrodes 4 and 5 provided on the LED element mounting substrate 2 of the LED lamp 1 when the LED lamp 1 is mounted on the surface of the circuit board 7 on the side where the LED lamp 1 is mounted in advance. Electrode pads 7 a and 7 b are provided at positions where the electrodes are to be disposed, and electrode pads 7 c are also provided at positions corresponding to the electrodes 9.

すると、LEDランプ1を回路基板7に搭載するときに、電極4と電極パッド7a及び電極5と電極パッド7b、と同様に電極9と電極パッド7cが半田接合される。具体的には、電極9の、電極パッド7cに垂直な電極部9bは電極パッド7cに対して半田フィレット8a(図示せず)で接合され、電極パッド7cに平行な端面9eに対しては電極パッド7aとの間に位置する半田8bによって接合される。   Then, when the LED lamp 1 is mounted on the circuit board 7, the electrode 9 and the electrode pad 7c are solder-bonded in the same manner as the electrode 4 and the electrode pad 7a and the electrode 5 and the electrode pad 7b. Specifically, the electrode portion 9b of the electrode 9 perpendicular to the electrode pad 7c is joined to the electrode pad 7c by a solder fillet 8a (not shown), and the electrode 9 is connected to the end face 9e parallel to the electrode pad 7c. Joined by solder 8b located between the pads 7a.

その結果、回路基板7に対するLEDランプ1の半田接合の接合強度が、上記実施例1よりも更に強力なものとる。なお、本実施例のLEDランプの電極構造が3層からなることは実施例1と同様である。   As a result, the bonding strength of the LED lamp 1 with respect to the circuit board 7 is stronger than that of the first embodiment. In addition, it is the same as that of Example 1 that the electrode structure of the LED lamp of a present Example consists of three layers.

図5は本発明に係る実施例3の斜視図であり、LED素子を実装した側と反対側且つ回路基板搭載側から見た図である。   FIG. 5 is a perspective view of Example 3 according to the present invention, as viewed from the side opposite to the side on which the LED element is mounted and from the circuit board mounting side.

本実施例は上記実施例1に対して、LEDランプ1のLED素子実装用基板2に形成された電極4の電極部4c近傍の端面4e側に、電極部4aと電極部4bを貫く断面円弧状又は楕円状の溝部10が形成されている。   This embodiment is a cross-sectional circle that penetrates the electrode portion 4a and the electrode portion 4b on the end face 4e side in the vicinity of the electrode portion 4c of the electrode 4 formed on the LED element mounting substrate 2 of the LED lamp 1 with respect to the first embodiment. An arcuate or elliptical groove 10 is formed.

同様に、LEDランプ1のLED素子実装用基板2に形成された電極5の電極部5c近傍の端面5e側に、電極部5aと電極部5bを貫く断面円弧状又は楕円状の溝部11が形成されている。   Similarly, on the side of the end surface 5e of the electrode 5 formed on the LED element mounting substrate 2 of the LED lamp 1 in the vicinity of the electrode surface 5c, a groove portion 11 having an arcuate or elliptical cross section passing through the electrode portion 5a and the electrode portion 5b is formed. Has been.

溝部10及び溝部11はいずれもその内周面が導体でコーティングされており、コーティングは一般に銅メッキ層/ニッケルメッキ層/金メッキ層の3層構造で構成される。溝部10及び溝部11の夫々の端部10e、11eも一般に銅メッキ層/ニッケルメッキ層/金メッキ層の3層構造で構成される。   Both the groove portion 10 and the groove portion 11 are coated with a conductor on the inner peripheral surface, and the coating is generally constituted by a three-layer structure of copper plating layer / nickel plating layer / gold plating layer. The end portions 10e and 11e of the groove portion 10 and the groove portion 11 are also generally configured by a three-layer structure of copper plating layer / nickel plating layer / gold plating layer.

本実施例のLEDランプ1を回路基板7に搭載した状態を図6(図5のC−C断面を使用)に示している。溝部10の、3層構造のメッキ層が形成された内周面10g及び端面10eはLEDランプ1を回路基板7に搭載するときに回路基板7の電極パッド7aと半田接合され、溝部11の内周面11g及び端面11eはLEDランプ1を回路基板7に搭載するときに回路基板7の電極パッド7bと半田接合される。   A state where the LED lamp 1 of the present embodiment is mounted on the circuit board 7 is shown in FIG. 6 (using the CC cross section of FIG. 5). The inner peripheral surface 10g and the end surface 10e of the groove portion 10 on which the plating layer having the three-layer structure is formed are soldered to the electrode pads 7a of the circuit board 7 when the LED lamp 1 is mounted on the circuit board 7. The peripheral surface 11g and the end surface 11e are soldered to the electrode pads 7b of the circuit board 7 when the LED lamp 1 is mounted on the circuit board 7.

その結果、LED素子実装用基板2に形成された溝部10及び溝部11は、LEDランプ1の、回路基板7に対する搭載の際に半田接合の接合強度の強化に寄与するものである。   As a result, the groove portion 10 and the groove portion 11 formed on the LED element mounting substrate 2 contribute to strengthening the bonding strength of the solder joint when the LED lamp 1 is mounted on the circuit board 7.

なお、溝部10と溝部11は、半田接合の接合強度のバランスが均衡するように断面同一形状同一寸法で形成される。更に、溝部10と溝部11は回路基板7搭載上の観点から少なくとも絶縁基板6の同一面側に形成される。   In addition, the groove part 10 and the groove part 11 are formed with the same cross-sectional shape and the same size so that the balance of the bonding strength of the solder bonding is balanced. Further, the groove 10 and the groove 11 are formed at least on the same surface side of the insulating substrate 6 from the viewpoint of mounting the circuit board 7.

溝部10、11は加工方法が簡単なためにLED素子実装用基板2のコストを大きく上昇させることがなく、溝径を大きくしたり溝の数を増やして半田接合面の面積を増加させることにより半田接合の接合強度を強化することができる。   The groove portions 10 and 11 do not significantly increase the cost of the LED element mounting substrate 2 because the processing method is simple. By increasing the groove diameter or the number of grooves, the area of the solder joint surface is increased. The bonding strength of solder bonding can be strengthened.

それと共に、封止樹脂3を溝部10、11を避けて設けなければならないため、比較的大きいサイズのLEDランプに対応可能な構造となっている。   At the same time, since the sealing resin 3 must be provided so as to avoid the grooves 10 and 11, the structure can be adapted to a relatively large size LED lamp.

図7は本発明に係る実施例4の斜視図であり、LED素子を実装した側と反対側且つ回路基板搭載側から見た図である。本実施例は上記実施例3に対して、LEDランプ1のLED素子実装用基板2に形成された溝部10、11の、封止樹脂3が設けられ側が塞がれた構造となっている点が異なる。それ以外は実施例3と同様であるので説明は省略する。   FIG. 7 is a perspective view of Example 4 according to the present invention, as viewed from the side opposite to the side on which the LED element is mounted and from the circuit board mounting side. Compared with the third embodiment, the present embodiment has a structure in which the sealing resin 3 of the grooves 10 and 11 formed on the LED element mounting substrate 2 of the LED lamp 1 is provided and the side is closed. Is different. Since other than that is the same as that of Example 3, description is abbreviate | omitted.

本実施例においては、溝部10、11はレーザ加工あるいは貫通溝を銅箔または絶縁部材で塞ぐことで容易に形成できる。そのため、LED素子実装用基板2のコストを大きく上昇させることがない。   In the present embodiment, the groove portions 10 and 11 can be easily formed by laser processing or by closing the through groove with a copper foil or an insulating member. Therefore, the cost of the LED element mounting board 2 is not significantly increased.

それと共に、封止樹脂3を溝部10、11の塞がれた部分に設けることができるためLEDランプの小型化が可能となり、中サイズから小さいサイズのLEDランプに対応可能な構造となっている。LEDランプの小型化により多数個取りの取り数が多くなり、LEDランプ1個当たりの製造コストが低減する利点もある。   At the same time, since the sealing resin 3 can be provided in the portion where the groove portions 10 and 11 are blocked, the LED lamp can be reduced in size, and the structure can be adapted to an LED lamp of a medium size to a small size. . The downsizing of the LED lamp increases the number of multi-pieces, which has the advantage of reducing the manufacturing cost per LED lamp.

なお、実施例3及び実施例4に関しては、溝部10内及び溝部11内に導電性部材を充填することも可能である。また、複数のLED素子を実装するLEDランプにも対応可能である。更に、実施例1及び実施例2の構造と組み合わせた構造とすることも可能である。   In addition, regarding Example 3 and Example 4, it is also possible to fill the groove part 10 and the groove part 11 with a conductive member. Moreover, it can respond also to the LED lamp which mounts a some LED element. Furthermore, a structure combined with the structures of the first and second embodiments may be used.

以上詳細に説明したように、本発明により、従来の同タイプのLEDランプと比べて難しい製造工程を有することのない、且つ、搭載する回路基板に対する半田接合の接合面積を増加させた構造のサイドビュータイプLEDランプを実現できた。   As described above in detail, according to the present invention, there is no difficult manufacturing process compared to the conventional LED lamp of the same type, and the side of the structure in which the bonding area of the solder bonding to the circuit board to be mounted is increased. A view-type LED lamp could be realized.

その結果、回路基板に対するLEDランプの半田接合の接合強度が強く、且つ接合強度の強化が比較的大きいサイズから小型サイズまで幅広く対応可能であり、しかも低コストで製造できるサイドビュータイプLEDランプを実現することが可能となった。   As a result, the bonding strength of the LED lamp soldering to the circuit board is strong, and the strengthening of the bonding strength can be widely handled from a relatively large size to a small size, and a side view type LED lamp that can be manufactured at low cost is realized. It became possible to do.

本発明の実施例1をLED素子実装方向と反対方向から見た概略図である。It is the schematic which looked at Example 1 of this invention from the opposite direction to the LED element mounting direction. 本発明の実施例1を回路基板に搭載した状態を示す概略図である。It is the schematic which shows the state which mounted Example 1 of this invention on the circuit board. 本発明の実施例2をLED素子実装方向と反対方向から見た概略図である。It is the schematic which looked at Example 2 of this invention from the opposite direction to the LED element mounting direction. 本発明の実施例2を回路基板に搭載した状態を示す概略図である。It is the schematic which shows the state which mounted Example 2 of this invention on the circuit board. 本発明の実施例3をLED素子実装方向と反対方向から見た概略図である。It is the schematic which looked at Example 3 of this invention from the opposite direction to the LED element mounting direction. 本発明の実施例3を回路基板に搭載した状態を示す概略図である。It is the schematic which shows the state which mounted Example 3 of this invention on the circuit board. 本発明の実施例4をLED素子実装方向と反対方向から見た概略図である。It is the schematic which looked at Example 4 of this invention from the opposite direction to the LED element mounting direction. 従来例をLED素子実装方向から見た概略図である。It is the schematic which looked at the prior art example from the LED element mounting direction. 従来例をLED素子実装方向と反対方向から見た概略図である。It is the schematic which looked at the prior art example from the opposite direction to the LED element mounting direction. 他の従来例をLED素子実装方向と反対方向から見た概略図である。It is the schematic which looked at the other prior art example from the direction opposite to the LED element mounting direction.

符号の説明Explanation of symbols

1 サイドビュータイプLEDランプ
2 LED素子実装用基板
3 封止樹脂
4 電極
4a、4b、4c、4d 電極部
4e、4f 端面
5 電極
5a、5b、5c、5d 電極部
5e、5b 端面
6 絶縁基板
7 回路基板
7a、7b、7c 電極パッド
8a 半田フィレット
8b 半田
9 電極
9b、9e 電極部
10 溝部
10e 端面
10g 内周面
11 溝部
11e 端面
11g 内周面
DESCRIPTION OF SYMBOLS 1 Side view type LED lamp 2 LED element mounting board 3 Sealing resin 4 Electrode 4a, 4b, 4c, 4d Electrode part 4e, 4f End face 5 Electrode 5a, 5b, 5c, 5d Electrode part 5e, 5b End face 6 Insulating board 7 Circuit board 7a, 7b, 7c Electrode pad 8a Solder fillet 8b Solder 9 Electrode 9b, 9e Electrode portion 10 Groove portion 10e End surface 10g Inner peripheral surface 11 Groove portion 11e End surface 11g Inner peripheral surface

Claims (6)

半導体発光素子を光源とし、回路基板搭載状態において光照射方向が該回路基板面に対して略平行となるような半導体発光装置であって、前記半導体発光装置は絶縁基板の一方の面から前記絶縁基板の端面を通って他方の面に繋がる複数の導体層が形成され、前記導体層のうち少なくとも複数は前記端面側に位置する前記導体層から前記絶縁基板中に延長された導体層を有すると共に前記絶縁基板中に延長された導体層の前記絶縁基板から露出した面に半田濡れ性を向上させるための導電部材からなるメッキ層が設けられ、前記半導体発光装置の前記回路基板搭載時に前記メッキ層と前記回路基板の間で半田接合が行われることを特徴とする半導体発光装置。   A semiconductor light emitting device having a semiconductor light emitting element as a light source and having a light irradiation direction substantially parallel to the circuit board surface when mounted on the circuit board, wherein the semiconductor light emitting device is insulated from one surface of the insulating substrate. A plurality of conductor layers connected to the other surface through the end face of the substrate are formed, and at least a plurality of the conductor layers have a conductor layer extended from the conductor layer located on the end face side into the insulating substrate. A plating layer made of a conductive member for improving solder wettability is provided on a surface of the conductor layer extended into the insulating substrate, which is exposed from the insulating substrate, and the plating layer is mounted when the circuit board of the semiconductor light emitting device is mounted. A semiconductor light emitting device, wherein solder bonding is performed between the circuit board and the circuit board. 前記絶縁基板中に延長された導体層は、該導体層が繋がった、前記絶縁基板の両面に位置する導体層の中間位置に形成されていることを特徴とする請求項1に記載の半導体発光装置。   2. The semiconductor light emitting device according to claim 1, wherein the conductor layer extended in the insulating substrate is formed at an intermediate position between the conductor layers connected to the conductor layer and located on both surfaces of the insulating substrate. apparatus. 半導体発光素子を光源とし、回路基板搭載状態において光照射方向が該回路基板面に対して略平行となるような半導体発光装置であって、前記半導体発光装置は絶縁基板の一方の面から前記絶縁基板の端面を通って他方の面に繋がる複数の導体層が形成され、前記絶縁基板は該絶縁基板の前記導体層が設けられた一方の面側から他方の面側に至る貫通溝が形成され、前記貫通溝の内周面に導電部材からなるメッキ層が設けられ、前記半導体発光装置の前記回路基板搭載時に前記メッキ層と前記回路基板の間で半田接合が行われることを特徴とする半導体発光装置。   A semiconductor light emitting device having a semiconductor light emitting element as a light source and having a light irradiation direction substantially parallel to the circuit board surface when mounted on the circuit board, wherein the semiconductor light emitting device is insulated from one surface of the insulating substrate. A plurality of conductor layers connected to the other surface through the end surface of the substrate are formed, and the insulating substrate has a through groove extending from one surface side of the insulating substrate on which the conductor layer is provided to the other surface side. And a plating layer made of a conductive member is provided on the inner peripheral surface of the through groove, and the semiconductor light emitting device is solder-bonded between the plating layer and the circuit board when the circuit board is mounted. Light emitting device. 半導体発光素子を光源とし、回路基板搭載状態において光照射方向が該回路基板面に対して略平行となるような半導体発光装置であって、前記半導体発光装置は絶縁基板の一方の面から前記絶縁基板の端面を通って他方の面に繋がる複数の導体層が形成され、前記絶縁基板は該絶縁基板の前記導体層が設けられた一方の面側から他方の面側に至る貫通溝が形成され、前記貫通溝の内周面に導電部材からなるメッキ層が設けられると共に前記貫通溝内に導電性部材が充填されて溝埋めが施され、前記半導体発光装置の前記回路基板搭載時に前記メッキ層と前記回路基板が前記溝埋め部材を介して半田接合されることを特徴とする半導体発光装置。   A semiconductor light emitting device having a semiconductor light emitting element as a light source and having a light irradiation direction substantially parallel to the circuit board surface when mounted on the circuit board, wherein the semiconductor light emitting device is insulated from one surface of the insulating substrate. A plurality of conductor layers connected to the other surface through the end surface of the substrate are formed, and the insulating substrate has a through groove extending from one surface side of the insulating substrate on which the conductor layer is provided to the other surface side. A plating layer made of a conductive member is provided on the inner peripheral surface of the through groove, and the through groove is filled with a conductive member to fill the groove, and the plating layer is mounted when the circuit board of the semiconductor light emitting device is mounted. And the circuit board are solder-bonded via the groove filling member. 半導体発光素子を光源とし、回路基板搭載状態において光照射方向が該回路基板面に対して略平行となるような半導体発光装置であって、前記半導体発光装置は絶縁基板の一方の面から前記絶縁基板の端面を通って他方の面に繋がる複数の導体層が形成され、前記絶縁基板は該絶縁基板の前記導体層が設けられた一方の面側から他方の面側の途中に至る非貫通溝が形成され、前記非貫通溝の内周面に導電部材からなるメッキ層が設けられ、前記半導体発光装置の前記回路基板搭載時に前記メッキ層と前記回路基板の間で半田接合が行われることを特徴とする半導体発光装置。   A semiconductor light emitting device having a semiconductor light emitting element as a light source and having a light irradiation direction substantially parallel to the circuit board surface when mounted on the circuit board, wherein the semiconductor light emitting device is insulated from one surface of the insulating substrate. A plurality of conductor layers connected to the other surface through the end surface of the substrate are formed, and the insulating substrate is a non-penetrating groove extending from one surface side of the insulating substrate on which the conductor layer is provided to the other surface side And a plating layer made of a conductive member is provided on the inner peripheral surface of the non-through groove, and solder bonding is performed between the plating layer and the circuit board when the circuit board is mounted on the semiconductor light emitting device. A semiconductor light emitting device. 半導体発光素子を光源とし、回路基板搭載状態において光照射方向が該回路基板面に対して略平行となるような半導体発光装置であって、前記半導体発光装置は絶縁基板の一方の面から前記絶縁基板の端面を通って他方の面に繋がる複数の導体層が形成され、前記絶縁基板は該絶縁基板の前記導体層が設けられた一方の面側から他方の面側の途中に至る非貫通溝が形成され、前記非貫通溝の内周面に導電部材からなるメッキ層が設けられると共に前記非貫通溝内に導電性部材が充填されて溝埋めが施され、前記半導体発光装置の前記回路基板搭載時に前記メッキ層と前記回路基板が前記溝埋め部材を介して半田接合されることを特徴とする半導体発光装置。   A semiconductor light emitting device having a semiconductor light emitting element as a light source and having a light irradiation direction substantially parallel to the circuit board surface when mounted on the circuit board, wherein the semiconductor light emitting device is insulated from one surface of the insulating substrate. A plurality of conductor layers connected to the other surface through the end surface of the substrate are formed, and the insulating substrate is a non-penetrating groove extending from one surface side of the insulating substrate on which the conductor layer is provided to the other surface side And a plating layer made of a conductive member is provided on the inner peripheral surface of the non-penetrating groove, and the non-penetrating groove is filled with a conductive member to fill the groove. A semiconductor light-emitting device, wherein the plated layer and the circuit board are soldered together via the groove filling member when mounted.
JP2007339330A 2007-12-28 2007-12-28 Semiconductor light-emitting apparatus Pending JP2009164176A (en)

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