JP2001111116A - Chip type semiconductor light emitting device - Google Patents
Chip type semiconductor light emitting deviceInfo
- Publication number
- JP2001111116A JP2001111116A JP29043299A JP29043299A JP2001111116A JP 2001111116 A JP2001111116 A JP 2001111116A JP 29043299 A JP29043299 A JP 29043299A JP 29043299 A JP29043299 A JP 29043299A JP 2001111116 A JP2001111116 A JP 2001111116A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor light
- light emitting
- chip
- emitting device
- chip substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Landscapes
- Led Device Packages (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はチップ型半導体発光
装置に関し、より詳細には半導体発光素子で発生した熱
を効率的に発散させるチップ型半導体発光装置に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chip type semiconductor light emitting device, and more particularly, to a chip type semiconductor light emitting device for efficiently dissipating heat generated by a semiconductor light emitting element.
【０００２】[0002]
【従来の技術】近年の電子機器の小形・薄形化傾向に伴
って、回路基板へ表面実装が可能なチップ型半導体発光
装置の需要が急速に増加している。チップ型半導体発光
装置（以下、チップ型装置と記すことがある）は直方体
ブロックに近い形を通常はしており、チップ基板の両端
に表面から裏面に回り込むように一対の電極が形成され
ている。回路基板上の配線パターンとこの電極とが接触
するようにチップ型装置を回路基板上に配設し、半田な
どの導電性接着剤でチップ型装置を基板上に固着する。
従来の代表的なチップ型装置の形態を図４に示す。平面
視長矩形状をしたチップ基板１の上面長手方向両端部に
はそれぞれ電極２，２’が形成されている。一方の電極
２の基板１の表面側にはチップボンディング部（不図
示）が形成され、ここに半導体発光素子４がボンディン
グされる。他方の電極２’の表面側にはワイヤボンディ
ング部（不図示）が形成され、半導体発光素子４の上面
電極（不図示）とボンディングワイヤ５によって結線さ
れている。そして、半導体発光素子４およびボンディン
グワイヤ５は透光性樹脂で封止されている。透光性樹脂
としては広くエポキシ樹脂が用いられているが、透光性
樹脂は一般に熱伝導率が高くない。このため、半導体発
光素子で発生した熱は電極２，２’を伝わって外部へ放
散する外は樹脂封止体６内に蓄積され、チップ型装置の
温度が上昇する。特に高輝度の半導体発光素子ほど発熱
量が多く温度上昇が大きくなる。半導体発光素子４の温
度が上昇すると、半導体発光素子４の発光効率が低下す
ると共に輝度も低くなり、色調にも変化を来すことがあ
る。2. Description of the Related Art With the recent trend toward smaller and thinner electronic devices, the demand for chip-type semiconductor light-emitting devices that can be surface-mounted on circuit boards is rapidly increasing. A chip-type semiconductor light-emitting device (hereinafter sometimes referred to as a chip-type device) usually has a shape close to a rectangular parallelepiped block, and a pair of electrodes is formed at both ends of a chip substrate so as to extend from the front surface to the back surface. . A chip-type device is arranged on a circuit board so that a wiring pattern on the circuit board and this electrode are in contact with each other, and the chip-type device is fixed on the substrate with a conductive adhesive such as solder.
FIG. 4 shows a form of a typical conventional chip type device. Electrodes 2 and 2 'are formed at both ends in the longitudinal direction of the upper surface of the chip substrate 1 having a rectangular shape in a plan view. A chip bonding portion (not shown) is formed on the surface of the substrate 1 of the one electrode 2, and the semiconductor light emitting element 4 is bonded to the chip bonding portion. A wire bonding part (not shown) is formed on the surface side of the other electrode 2 ′, and is connected to an upper electrode (not shown) of the semiconductor light emitting element 4 by a bonding wire 5. Then, the semiconductor light emitting element 4 and the bonding wire 5 are sealed with a translucent resin. Epoxy resins are widely used as translucent resins, but translucent resins generally do not have high thermal conductivity. For this reason, the heat generated in the semiconductor light emitting element is accumulated in the resin sealing body 6 except for the heat transmitted through the electrodes 2 and 2 ′ and dissipated to the outside, and the temperature of the chip-type device increases. In particular, the higher the brightness of the semiconductor light emitting element, the greater the amount of heat generated and the greater the temperature rise. When the temperature of the semiconductor light-emitting element 4 rises, the luminous efficiency of the semiconductor light-emitting element 4 decreases, the luminance decreases, and the color tone may change.
【０００３】このような半導体発光素子４の発熱に起因
する不具合を防止するため、半導体発光素子４で発生し
た熱を放熱板を用いて効率よく発散させる技術がこれま
でから種々提案されている。例えば特開平１０−３０３
４６４号公報では、チップ基板表面側の電極上に導電性
部材からなる放熱板を固着して、半導体発光素子から発
生する熱をこの放熱板により拡散・放熱する技術が提案
されている。かかる技術によれば確かに半導体発光素子
で発生する熱を放熱することはできる。しかしながら、
ここで使用されているようなステンレスや銅、アルミニ
ウムなどの放熱板は封止用樹脂であるエポキシ樹脂と密
着性の点で一般的に問題があり、発光ダイオードを回路
基板に半田付けする際に溶融した半田が放熱板表面を伝
って樹脂封止体内部へ侵入し、この進入経路からさらに
水蒸気などが侵入して半導体発光素子やボンディングワ
イヤを腐食させて導通不良を引き起こすことがある。加
えて、基板表面に明度の低い部材からなる放熱板を固着
すると反射効率が悪くなることがある。Various techniques have been proposed for efficiently dissipating the heat generated by the semiconductor light emitting element 4 by using a heat radiating plate in order to prevent such a problem caused by the heat generation of the semiconductor light emitting element 4. For example, JP-A-10-303
Japanese Patent No. 464 proposes a technique in which a heat radiating plate made of a conductive member is fixed on an electrode on the chip substrate surface side, and heat generated from the semiconductor light emitting element is diffused and radiated by the heat radiating plate. According to this technique, it is possible to radiate the heat generated in the semiconductor light emitting device. However,
Heat sinks such as stainless steel, copper, and aluminum used here generally have a problem in terms of adhesion with the epoxy resin that is the sealing resin. In some cases, the molten solder invades the inside of the resin sealing body along the surface of the heat radiating plate, and water vapor or the like further intrudes from the entrance path to corrode the semiconductor light emitting element and the bonding wire, thereby causing conduction failure. In addition, if a heat sink made of a member having low brightness is fixed to the substrate surface, the reflection efficiency may be deteriorated.
【０００４】また特開平７−２０２２７１号公報では、
基板の裏面に放熱用ランドや放熱板を設けて半導体発光
素子から発生する熱を放熱する技術が提案されている。
かかる技術によれば半導体発光素子で発生する熱を放熱
することはできる。しかしながら、基板の裏面に放熱用
ランドや放熱板を設けたこのような発光ダイオードで
は、回路基板にクリーム半田などで実装する際、基板両
端に形成された一対の電極にそれぞれ塗布されたクリー
ム半田がリフロー炉で溶融し放熱用ランドや放熱板にま
で達して電極間の短絡が発生する可能性が高い。In Japanese Patent Application Laid-Open No. 7-202271,
A technology has been proposed in which a heat-dissipating land or a heat-dissipating plate is provided on the back surface of a substrate to dissipate heat generated from a semiconductor light-emitting element.
According to this technique, heat generated in the semiconductor light emitting element can be radiated. However, in such a light emitting diode in which a heat radiation land or a heat radiation plate is provided on the back surface of the substrate, when the circuit board is mounted with cream solder or the like, the cream solder applied to a pair of electrodes formed at both ends of the substrate is applied. There is a high possibility that it will be melted in the reflow furnace and reach the radiating land or radiating plate and short-circuit between the electrodes will occur.
【０００５】[0005]
【発明が解決しようとする課題】本発明は前記従来の問
題に鑑みなされたものであり、反射効率を低下させるこ
となく半導体発光素子で発生した熱を効率的に発散で
き、しかも回路基板への半田付けの際電極間の短絡を起
こさないチップ型半導体発光装置の提供をその目的とす
るものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional problems, and can efficiently radiate heat generated in a semiconductor light emitting element without lowering reflection efficiency. It is an object of the present invention to provide a chip type semiconductor light emitting device which does not cause a short circuit between electrodes during soldering.
【０００６】[0006]
【課題を解決するための手段】本発明によれば、チップ
基板の両端に表面から裏面に回り込むように一対の電極
を形成し、該チップ基板の表面側において前記電極の一
方に半導体発光素子の一方の電極を接続し、前記電極の
もう一方に該半導体発光素子のもう一方の電極を接続
し、該半導体発光素子を透光性樹脂で封止したチップ型
半導体発光素子において、前記チップ基板が放熱部材を
内包していることを特徴とするチップ型半導体発光装置
が提供される。According to the present invention, a pair of electrodes are formed on both ends of a chip substrate so as to extend from the front surface to the back surface, and one of the electrodes is provided on one of the electrodes on the front surface side of the chip substrate. In a chip-type semiconductor light-emitting element in which one electrode is connected, the other electrode of the semiconductor light-emitting element is connected to the other electrode, and the semiconductor light-emitting element is sealed with a transparent resin, the chip substrate is There is provided a chip type semiconductor light emitting device including a heat radiating member.
【０００７】ここで電極間の短絡の防止をより確実にす
るためには、前記放熱部材の端面を前記チップ基板の側
面より奥側に位置するのがよい。Here, in order to more reliably prevent a short circuit between the electrodes, it is preferable that the end surface of the heat radiating member is located on the back side of the side surface of the chip substrate.
【０００８】また半導体発光素子で発生した熱の放散を
一層促進するためには、前記チップ基板の裏面に前記放
熱部材の一部が露出する開口部を形成することが望まし
い。In order to further promote the dissipation of the heat generated in the semiconductor light emitting device, it is desirable to form an opening on the back surface of the chip substrate so that a part of the heat radiating member is exposed.
【０００９】[0009]
【発明の実施の形態】本発明者等は、放熱部材を用いる
ことを前提として、反射効率を低下させず、しかも回路
基板への半田付けの際電極間の短絡を生じさせずに半導
体発光素子で発生した熱を発散させることができないか
鋭意検討を重ねた結果、放熱部材をチップ基板に内包さ
せればよいことを見出し本発明をなすに至った。すなわ
ち、本発明の半導体発光素子では、放熱部材がチップ基
板に内包されているので、チップ基板の表面側は従来と
まったく同じであって反射効率が低下することがなく、
また回路基板への半田付けの際にも電極間の短絡を生じ
ることがない。BEST MODE FOR CARRYING OUT THE INVENTION The present inventors have presumed that a heat-radiating member will be used, and will not reduce the reflection efficiency and will not cause a short circuit between electrodes when soldering to a circuit board. As a result of intensive studies as to whether or not the heat generated in step (1) can be dissipated, the inventors have found that a heat radiation member may be included in the chip substrate, and have accomplished the present invention. That is, in the semiconductor light emitting device of the present invention, since the heat radiation member is included in the chip substrate, the front side of the chip substrate is exactly the same as the conventional one and the reflection efficiency does not decrease,
Also, no short circuit occurs between the electrodes during soldering to the circuit board.
【００１０】以下図面に基づき本発明の半導体発光装置
について説明する。なおこれら図において図４と同じ部
材および部分は同一符号とする。図１は本発明のチップ
型半導体発光装置の斜視図である。チップ基板１の長手
方向両端部にはそれぞれ電極２，２’が形成されてい
る。一方の電極２の基板１の表面側にはチップボンディ
ング部（不図示）が形成され、ここに半導体発光素子４
がボンディングされている。他方の電極２’の表面側に
はワイヤボンディング部（不図示）が形成され、半導体
発光素子４の上面電極（不図示）とボンディングワイヤ
５によって結線されている。そして、半導体発光素子４
およびボンディングワイヤ５は透光性樹脂で封止されて
いる。一方、チップ基板１の幅方向には直方体状の放熱
部材３がチップ基板１の内周面に内接するように内包さ
れている。このように放熱部材３をチップ基板に内包さ
せることによって半導体発光素子４で発生した熱を効率
的に放熱することができるのである。A semiconductor light emitting device according to the present invention will be described below with reference to the drawings. In these drawings, the same members and portions as those in FIG. FIG. 1 is a perspective view of a chip type semiconductor light emitting device of the present invention. Electrodes 2 and 2 'are formed at both ends in the longitudinal direction of the chip substrate 1, respectively. A chip bonding portion (not shown) is formed on one electrode 2 on the front surface side of the substrate 1.
Is bonded. A wire bonding part (not shown) is formed on the surface side of the other electrode 2 ′, and is connected to an upper electrode (not shown) of the semiconductor light emitting element 4 by a bonding wire 5. And the semiconductor light emitting element 4
The bonding wire 5 is sealed with a light-transmitting resin. On the other hand, a rectangular parallelepiped heat radiation member 3 is included in the width direction of the chip substrate 1 so as to be inscribed in the inner peripheral surface of the chip substrate 1. By including the heat radiating member 3 in the chip substrate in this manner, the heat generated in the semiconductor light emitting element 4 can be efficiently radiated.
【００１１】なお図１では、いわゆるワイヤボンディン
グ方式のチップ型装置を表したが、ボンディングワイヤ
を用いずに半導体発光素子４を電極２，２’に接続する
ノンワイヤボンディング方式のものも本発明のチップ型
装置に含まれ、また半導体発光素子４を２個以上用いた
ものも本発明のチップ型装置にもちろん含まれる。Although FIG. 1 shows a so-called wire bonding type chip type device, a non-wire bonding type in which the semiconductor light emitting element 4 is connected to the electrodes 2 and 2 'without using bonding wires is also used in the present invention. Devices included in the chip-type device and using two or more semiconductor light-emitting elements 4 are of course also included in the chip-type device of the present invention.
【００１２】本発明で使用する放熱部材としては、熱伝
導率が高いものであれば特に限定はなく、例えば銅、ア
ルミニウム、ステンレスなどが挙げられる。The heat radiating member used in the present invention is not particularly limited as long as it has high thermal conductivity, and examples thereof include copper, aluminum, and stainless steel.
【００１３】放熱部材を内包したチップ基板の製法は特
に限定はなく、例えばＢＴレジン、ガラスエポキシ樹
脂、アルミナセラミックス、ポリエステル樹脂などの基
板材料を用い、放熱部材を所定位置においてこれらをイ
ンサート成形することにより作製することができる。The method of manufacturing the chip substrate including the heat radiating member is not particularly limited. For example, a substrate material such as BT resin, glass epoxy resin, alumina ceramics, or polyester resin is used, and the heat radiating member is insert-molded at a predetermined position. Can be produced.
【００１４】このようなチップ基板１への前記電極２，
２’の形成は、例えば印刷や蒸着などの方法によってチ
ップ基板１の全体に金や銅などの導体被膜を形成し、不
要部分をエッチングによって除去することにより形成す
ることができる。The above-mentioned electrodes 2, 2
2 'can be formed by, for example, forming a conductive film such as gold or copper on the entire chip substrate 1 by a method such as printing or vapor deposition, and removing unnecessary portions by etching.
【００１５】電極間の短絡の防止をより確実にするため
には、放熱部材３の端面はチップ基板１の側面より奥側
に位置しているのがよい。図２に図１のＡ−Ａ線断面図
を示す。図２（ａ）は放熱部材３の端面がチップ基板１
の側面と同一面にある場合で、図２（ｂ）は放熱部材３
の端面がチップ基板１の側面より奥側に位置する場合で
ある。図２（ｂ）のチップ型装置では、放熱部材３の側
面（紙面では上下）および上下面（紙面では手前・奥）
はチップ基板１の内周面と内接している点は図２（ａ）
のチップ型装置と同様であるが、放熱部材３の幅（紙面
では左右）がチップ基板１のそれよりも短く、放熱部材
３の両端面はチップ基板１の側面よりそれぞれ所定距離
だけ奥側に位置している。チップ基板１の側面から放熱
部材３の端面までの距離は、チップ型装置を回路基板に
半田で固着する際に、半田が放熱部材３に接触しない距
離であればよく、チップ型装置の大きさや形状、回路基
板の回路パターンなどから適宜決定すればよい。一般的
にこの距離は０．２〜０．５ｍｍの範囲が好ましく、
０．３〜０．５ｍｍの範囲がより好ましい。また放熱を
より促進するために、放熱部材の端面形状を外気との接
触面積が大きい形状、例えば凹凸形状などにするのが望
ましい。In order to more reliably prevent a short circuit between the electrodes, the end face of the heat radiating member 3 is preferably located deeper than the side face of the chip substrate 1. FIG. 2 is a sectional view taken along line AA of FIG. FIG. 2A shows that the end surface of the heat radiation member 3 is the chip substrate 1.
FIG. 2B shows the case where the heat radiating member 3 is provided.
Is located on the back side of the side surface of the chip substrate 1. In the chip type device shown in FIG. 2B, the side surface (up and down in the paper) and the upper and lower surfaces (front and back in the paper) of the heat radiation member 3
Is in contact with the inner peripheral surface of the chip substrate 1 in FIG.
However, the width of the heat dissipating member 3 (left and right on the paper surface) is shorter than that of the chip substrate 1, and both end surfaces of the heat dissipating member 3 are located a predetermined distance away from the side surfaces of the chip substrate 1 respectively. positioned. The distance from the side surface of the chip substrate 1 to the end surface of the heat radiating member 3 may be a distance that does not allow the solder to contact the heat radiating member 3 when the chip type device is fixed to the circuit board by soldering. What is necessary is just to determine suitably from a shape, the circuit pattern of a circuit board, etc. Generally, this distance is preferably in the range of 0.2 to 0.5 mm,
The range of 0.3 to 0.5 mm is more preferable. In order to further promote heat radiation, it is desirable that the end surface shape of the heat radiation member be a shape having a large contact area with the outside air, for example, an uneven shape.
【００１６】また半導体発光素子４で発生した熱の放散
を一層促進するためには、チップ基板１の裏面に放熱部
材３の一部が露出する開口部７を形成することが望まし
い。ここで開口部７は放熱部材３の一部を露出させる大
きさであることが重要である。外気との接触面積が大き
いほど放熱部材３からの熱発散が多くなるから、放熱の
観点からすれば開口部７はできるだけ大きくするのがよ
い。しかし開口部７を大きくすればするほど、チップ型
装置の固着の際の半田付けによる電極間の短絡の可能性
が大きくなる。このため、放熱部材３からの熱発散を多
くしながら、半田付けによる電極間の短絡を防止できる
程度にチップ基板１の裏面に開口部７を設けるのであ
る。本発明において放熱部材３の一部が露出する開口部
とはこのような作用を果たすものを意味する。したがっ
て開口部７の開口面積は、放熱部材３の底面積よりも小
さいものであればよく、具体的な開口面積や開口形状は
それぞれ装置及び半田付け方法などに合わせて個別具体
的に決定すればよい。チップ基板１の裏面に形成された
開口部７の具体的態様を図３に示す。図３は本発明のチ
ップ型装置の裏面を示す斜視図である。図３（ａ）はチ
ップ基板１の裏面幅方向に放熱部材３に達する溝状の開
口部７１が形成されたチップ型装置である。図３（ｂ）
はチップ型基板１の裏面の中央部に放熱部材３に達する
長方形状の開口部７２が形成されたチップ型装置であ
る。このような開口部７をチップ基板１の裏面に形成す
ることによって、放熱部材３が外気と直接接触する面積
が増加し熱の放散が促進される。In order to further promote the dissipation of the heat generated in the semiconductor light emitting element 4, it is desirable to form an opening 7 on the back surface of the chip substrate 1 so that a part of the heat radiating member 3 is exposed. Here, it is important that the opening 7 has such a size that a part of the heat radiation member 3 is exposed. The larger the area of contact with the outside air, the greater the amount of heat dissipation from the heat radiating member 3. Therefore, from the viewpoint of heat dissipation, the opening 7 is preferably as large as possible. However, the larger the opening 7, the greater the possibility of a short circuit between the electrodes due to soldering when the chip type device is fixed. For this reason, the opening 7 is provided on the back surface of the chip substrate 1 such that a short circuit between the electrodes due to soldering can be prevented while increasing the heat dissipation from the heat radiating member 3. In the present invention, the opening where a part of the heat radiating member 3 is exposed means one that performs such an action. Therefore, the opening area of the opening 7 may be smaller than the bottom area of the heat radiation member 3, and the specific opening area and opening shape may be individually and specifically determined according to the device and the soldering method. Good. FIG. 3 shows a specific mode of the opening 7 formed on the back surface of the chip substrate 1. FIG. 3 is a perspective view showing the back surface of the chip type device of the present invention. FIG. 3A shows a chip-type device in which a groove-shaped opening 71 reaching the heat radiation member 3 is formed in the width direction of the back surface of the chip substrate 1. FIG. 3 (b)
Is a chip-type device in which a rectangular opening 72 reaching the heat radiation member 3 is formed in the center of the back surface of the chip-type substrate 1. By forming such an opening 7 on the back surface of the chip substrate 1, the area where the heat radiating member 3 is in direct contact with the outside air is increased, and heat dissipation is promoted.
【００１７】本発明で使用できる半導体発光素子として
は特に限定はなく、従来公知のものが使用でき、例えば
Ｓｉ、ＧａＡｓ、ＧａＡｌＡｓ、ＩｎＰ、ＡｌＩｎＧａ
Ｐ系半導体などが挙げられる。The semiconductor light emitting device that can be used in the present invention is not particularly limited, and conventionally known devices can be used. For example, Si, GaAs, GaAlAs, InP, AlInGa
P-based semiconductors and the like are listed.
【００１８】本発明で使用できる透光性樹脂としては、
例えばエポキシ樹脂や不飽和ポリエステル樹脂、シリコ
ーン樹脂、ユリア・メラミン樹脂などが挙げられ、この
中でも透光性などの点からエポキシ樹脂がより好適に使
用できる。エポキシ樹脂としては、一分子中に２個以上
のエポキシ基を有するものでエポキシ樹脂成形材料とし
て使用されるものであれば制限はなく、フェノールノボ
ラック型エポキシ樹脂、オルクレゾールノボラック型エ
ポキシ樹脂を代表するフェノール類とアルデヒド類のノ
ボラック樹脂をエポキシ化したもの、ビスフェノール
Ａ、ビスフェノールＦ、ビスフェノールＳ、水添ビスフ
ェノールＡなどのジグリシジルエーテル、フタル酸、ダ
イマー酸などの多塩基酸とエピクロルヒドリンの反応に
より得られるジグリシジルエステル型エポキシ樹脂、ジ
アミノジフェニルメタン、イソシアヌル酸などのポリア
ミンとエピクロルヒドリンの反応により得られるグリシ
ジルアミン型エポキシ樹脂、オレフィン結合を過酢酸な
どの過酸により、酸化して得られる綿状脂肪族エポキシ
樹脂、および脂環族エポキシ樹脂などを挙げることがで
き、これらを単独であるいは２以上の混合物として使用
することができる。これらのエポキシ樹脂は十分に精製
されたもので、常温で液状であっても固形であってもよ
いが、液化時の外観ができる限り透明なものを使用する
のが好ましい。また図１では透光性樹脂封止体６は側断
面が台形状の形状をしているが、透光性樹脂封止体６の
形状はこれに限定されるものではなく、本発明のチップ
型半導体発光装置が用いられる器具や部品の形状などか
ら適宜決定すればよい。封止方法としては例えばトラン
スファ成形法などを用いることができる。トランスファ
成型法の場合、成形条件は通常、成形温度１４０〜１６
０℃、圧力４００〜１２００Ｎ／ｃｍ2、成形時間１〜
５ｍｉｎの範囲である。The translucent resin usable in the present invention includes:
For example, an epoxy resin, an unsaturated polyester resin, a silicone resin, a urea-melamine resin, and the like can be mentioned. Among them, the epoxy resin can be more preferably used from the viewpoint of translucency. The epoxy resin is not limited as long as it has two or more epoxy groups in one molecule and is used as an epoxy resin molding material, and is representative of a phenol novolak epoxy resin and an olecresol novolac epoxy resin. Epoxidized novolak resins of phenols and aldehydes, obtained by the reaction of epichlorohydrin with polybasic acids such as bisphenol A, bisphenol F, bisphenol S, diglycidyl ethers such as hydrogenated bisphenol A, phthalic acid, and dimer acid Diglycidyl ester type epoxy resin, glycidylamine type epoxy resin obtained by reaction of polyamine such as diaminodiphenylmethane, isocyanuric acid and epichlorohydrin, and olefin bond obtained by oxidizing olefin bond with peracid such as peracetic acid. That flocculent aliphatic epoxy resins, and alicyclic epoxy resins and the like can be mentioned, and these can be used alone or as a mixture of two or more. These epoxy resins are sufficiently purified, and may be liquid or solid at room temperature, but it is preferable to use a resin which is as transparent as possible when liquefied. Also, in FIG. 1, the translucent resin sealing body 6 has a trapezoidal side cross section, but the shape of the translucent resin sealing body 6 is not limited to this, and the chip of the present invention What is necessary is just to determine suitably from the shape of the implement | tool or component by which the type | mold semiconductor light emitting device is used. As a sealing method, for example, a transfer molding method can be used. In the case of the transfer molding method, the molding conditions are usually a molding temperature of 140 to 16
0 ° C., pressure 400 to 1200 N / cm 2 , molding time 1 to 1
The range is 5 minutes.
【００１９】本発明のチップ型半導体発光装置は、表面
パネルや液晶表示装置のバックライト、携帯機器のイン
ジケータ、照明スイッチ、事務機器の光源などとして用
いられ、例えば回路基板上の配線パターンと当該チップ
型半導体発光装置の電極とを接触するように回路基板上
に配設し、クリーム半田などの導電性接着剤を電極およ
び配線パターンに塗布した後、リフロー炉で加熱してク
リーム半田を溶融させて回路基板に固着し使用する。The chip type semiconductor light emitting device of the present invention is used as a backlight of a surface panel or a liquid crystal display, an indicator of a portable device, a lighting switch, a light source of office equipment, and the like. After placing a conductive adhesive such as cream solder on the electrodes and wiring patterns, it is heated in a reflow oven to melt the cream solder. It is fixed to the circuit board and used.
【００２０】[0020]
【発明の効果】本発明のチップ型半導体発光装置によれ
ば、チップ基板に放熱部材を内包させるので、反射効率
を低下させることなく半導体発光素子で発生した熱を効
率的に発散でき、半導体発光素子の発光効率や輝度の低
下を招かず、また色調も変化しない。さらに回路基板へ
の半田付けの際に電極間の短絡が生じることもない。ま
た請求項２の発明では放熱部材の端面をチップ基板の側
面より奥側に位置するようにしたので、回路基板へ半田
付けする際の電極間の短絡が一層防止される。さらに請
求項３の発明では放熱部材の一部が露出するようにチッ
プ基板の裏面に開口部を設けたので、放熱部材からの熱
の放散が一層促進される。According to the chip-type semiconductor light emitting device of the present invention, since the heat radiation member is included in the chip substrate, the heat generated by the semiconductor light emitting element can be efficiently dissipated without lowering the reflection efficiency, and the semiconductor light emitting device can emit light. The luminous efficiency and luminance of the element do not decrease, and the color tone does not change. Furthermore, no short circuit occurs between the electrodes during soldering to the circuit board. According to the second aspect of the present invention, since the end surface of the heat radiating member is positioned deeper than the side surface of the chip substrate, a short circuit between the electrodes when soldering to the circuit board is further prevented. Further, in the third aspect of the present invention, since the opening is provided on the back surface of the chip substrate so that a part of the heat radiating member is exposed, heat dissipation from the heat radiating member is further promoted.
【図１】 本発明のチップ型半導体発光装置の表面側の
斜視図である。FIG. 1 is a perspective view of a front surface side of a chip type semiconductor light emitting device of the present invention.
【図２】 図１のＡ−Ａ線断面図である。FIG. 2 is a sectional view taken along line AA of FIG.
【図３】 本発明のチップ型半導体発光装置の裏面側の
斜視図である。FIG. 3 is a perspective view of the back surface side of the chip-type semiconductor light emitting device of the present invention.
【図４】 従来のチップ型半導体装置の斜視図である。FIG. 4 is a perspective view of a conventional chip-type semiconductor device.
１ チップ基板 ２，２’ 電極 ３ 放熱部材 ４ 半導体発光素子 ５ ボンディングワイヤ ６ 透光性樹脂封止体 ７、７１、７２ 開口部 DESCRIPTION OF SYMBOLS 1 Chip board 2, 2 'electrode 3 Heat dissipation member 4 Semiconductor light emitting element 5 Bonding wire 6 Translucent resin sealing body 7, 71, 72 Opening
Claims (3)
込むように一対の電極を形成し、該チップ基板の表面側
において前記電極の一方に半導体発光素子の一方の電極
を接続し、前記電極のもう一方に該半導体発光素子のも
う一方の電極を接続し、該半導体発光素子を透光性樹脂
で封止したチップ型半導体発光素子において、 前記チップ基板が放熱部材を内包していることを特徴と
するチップ型半導体発光装置。1. A pair of electrodes are formed at both ends of a chip substrate so as to extend from the front surface to the back surface, and one electrode of a semiconductor light emitting element is connected to one of the electrodes on the front surface side of the chip substrate. A chip type semiconductor light emitting device in which the other electrode of the semiconductor light emitting device is connected to the other, and the semiconductor light emitting device is sealed with a transparent resin, wherein the chip substrate includes a heat radiating member. Semiconductor light emitting device.
側面より奥側に位置する請求項１記載のチップ型半導体
発光装置。2. The chip type semiconductor light emitting device according to claim 1, wherein an end face of said heat radiating member is located at a position deeper than a side surface of said chip substrate.
一部が露出する開口部が形成されている請求項１又は２
記載のチップ型半導体発光装置。3. An opening for exposing a part of the heat radiation member is formed on a back surface of the chip substrate.
14. The chip-type semiconductor light emitting device according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29043299A JP3886306B2 (en) | 1999-10-13 | 1999-10-13 | Chip-type semiconductor light-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29043299A JP3886306B2 (en) | 1999-10-13 | 1999-10-13 | Chip-type semiconductor light-emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001111116A true JP2001111116A (en) | 2001-04-20 |
| JP3886306B2 JP3886306B2 (en) | 2007-02-28 |
Family
ID=17755966
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29043299A Expired - Fee Related JP3886306B2 (en) | 1999-10-13 | 1999-10-13 | Chip-type semiconductor light-emitting device |
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| Country | Link |
|---|---|
| JP (1) | JP3886306B2 (en) |
Cited By (10)
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|---|---|---|---|---|
| JP2004296882A (en) * | 2003-03-27 | 2004-10-21 | Sanken Electric Co Ltd | Semiconductor light emitting device |
| EP1504476A2 (en) * | 2002-05-16 | 2005-02-09 | Osram Opto Semiconductors GmbH | Method for fixing a semiconductor chip in a plastic housing body, optoelectronic semiconductor component and method for the production thereof |
| JP2009088373A (en) * | 2007-10-02 | 2009-04-23 | Toyoda Gosei Co Ltd | Led lamp module |
| CN101471415A (en) * | 2007-12-28 | 2009-07-01 | 斯坦雷电气株式会社 | Semiconductor light-emitting device |
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| JP2011521469A (en) * | 2008-05-23 | 2011-07-21 | クリー インコーポレイテッド | Semiconductor lighting parts |
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-
1999
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|---|---|---|---|---|
| US8110437B2 (en) | 2002-05-16 | 2012-02-07 | Osram Opto Semiconductors Gmbh | Method for attaching a semiconductor chip in a plastic encapsulant, optoelectronic semiconductor component and method for the production thereof |
| EP1504476A2 (en) * | 2002-05-16 | 2005-02-09 | Osram Opto Semiconductors GmbH | Method for fixing a semiconductor chip in a plastic housing body, optoelectronic semiconductor component and method for the production thereof |
| JP2005526402A (en) * | 2002-05-16 | 2005-09-02 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Method for fixing a semiconductor chip to a plastic casing body, optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component |
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| US8530915B2 (en) | 2002-09-04 | 2013-09-10 | Cree, Inc. | Power surface mount light emitting die package |
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| JP2009224751A (en) * | 2007-09-06 | 2009-10-01 | Nichia Corp | Semiconductor apparatus |
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| CN101471415A (en) * | 2007-12-28 | 2009-07-01 | 斯坦雷电气株式会社 | Semiconductor light-emitting device |
| JP2009164176A (en) * | 2007-12-28 | 2009-07-23 | Stanley Electric Co Ltd | Semiconductor light-emitting apparatus |
| JP2011521469A (en) * | 2008-05-23 | 2011-07-21 | クリー インコーポレイテッド | Semiconductor lighting parts |
| CN103390708A (en) * | 2012-05-10 | 2013-11-13 | 展晶科技(深圳)有限公司 | Light-emitting diode encapsulation structure and manufacturing method thereof |
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