JP2009164176A5 - - Google Patents
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- Publication number
- JP2009164176A5 JP2009164176A5 JP2007339330A JP2007339330A JP2009164176A5 JP 2009164176 A5 JP2009164176 A5 JP 2009164176A5 JP 2007339330 A JP2007339330 A JP 2007339330A JP 2007339330 A JP2007339330 A JP 2007339330A JP 2009164176 A5 JP2009164176 A5 JP 2009164176A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor light
- light emitting
- insulating substrate
- emitting device
- circuit board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 25
- 239000004020 conductor Substances 0.000 claims description 21
- 238000007747 plating Methods 0.000 claims description 17
- 230000000149 penetrating Effects 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 3
- 239000011889 copper foil Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 230000002093 peripheral Effects 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 2
Description
上記課題を解決するために、本発明の請求項１に記載された発明は、半導体発光素子を光源とし、回路基板搭載状態において光照射方向が該回路基板面に対して略平行となるような半導体発光装置であって、前記半導体発光装置は、前記半導体発光素子を実装する絶縁基板の一方の面から前記絶縁基板の端面を通って他方の面に繋がる一対の導体層が形成され、前記導体層は前記端面側に位置する前記導体層から前記絶縁基板中に延長された中間導体層を有すると共に、前記絶縁基板中に延長された導体層の前記絶縁基板から露出した面に半田濡れ性を向上させるための導電部材からなるメッキ層が設けられ、前記メッキ層が形成された中間導体層は、絶縁基板の前記一方の面と他方の面の間の中間に位置し、且つ、中間導体層が露出した面が光照射方向と平行な面とされ、前記半導体発光装置の前記回路基板搭載時に前記メッキ層と前記回路基板の間で半田接合が行われることを特徴とするものである。 In order to solve the above-mentioned problem, the invention described in claim 1 of the present invention uses a semiconductor light-emitting element as a light source, and the light irradiation direction is substantially parallel to the circuit board surface when mounted on the circuit board. A semiconductor light emitting device, wherein the semiconductor light emitting device is formed with a pair of conductor layers connected from one surface of the insulating substrate on which the semiconductor light emitting element is mounted to the other surface through the end surface of the insulating substrate, with layer has an intermediate conductor layer extending in the insulating substrate from the conductive layer located on the end face side, the solder wettability on the surface exposed from the insulating substrate of the conductor layer which is extended in said insulating substrate A plating layer made of a conductive member for improving is provided, and the intermediate conductor layer on which the plating layer is formed is located between the one surface and the other surface of the insulating substrate, and the intermediate conductor layer Exposed surface Is a light irradiation direction parallel to the plane, it is characterized in that the said circuit solder bonding when the substrate is mounted between the circuit board and the plating layer of the semiconductor light-emitting device is performed.
また、本発明の請求項２に記載された発明は、請求項１において、さらに、前記絶縁基板の中間導体層が露出した面には、電極部が前記一対の中間導体層の間に形成され、前記電極部は前記絶縁基板の中で繋がっており、且つ、メッキ層が形成されていることを特徴とするものである。 According to a second aspect of the present invention, in the first aspect, the electrode portion is further formed between the pair of intermediate conductor layers on the surface of the insulating substrate where the intermediate conductor layer is exposed. The electrode portions are connected in the insulating substrate, and a plating layer is formed .
また、本発明の請求項３に記載された発明は、半導体発光素子を光源とし、回路基板搭載状態において光照射方向が該回路基板面に対して略平行となるような半導体発光装置であって、前記半導体発光装置は、前記半導体発光素子を実装する絶縁基板の一方の面から前記絶縁基板の端面を通って他方の面に繋がる一対の導体層が形成され、前記絶縁基板は前記他方の面側から一方の面側の途中に至る非貫通溝が形成され、前記非貫通溝の内周面に導電部材からなるメッキ層が設けられ、前記半導体発光装置の前記回路基板搭載時に前記メッキ層と前記回路基板の間で半田接合が行われることを特徴とするものである。 According to a third aspect of the present invention, there is provided a semiconductor light emitting device using a semiconductor light emitting element as a light source and having a light emission direction substantially parallel to the surface of the circuit board when mounted on the circuit board. The semiconductor light emitting device includes a pair of conductor layers connected from one surface of the insulating substrate on which the semiconductor light emitting element is mounted to the other surface through the end surface of the insulating substrate, and the insulating substrate is formed on the other surface. A non- penetrating groove extending from the side to the middle of one surface side is formed, and a plating layer made of a conductive member is provided on the inner peripheral surface of the non- penetrating groove, and when the circuit board of the semiconductor light emitting device is mounted, Solder bonding is performed between the circuit boards.
また、本発明の請求項４に記載された発明は、請求項１または請求項３において、前記導体層が銅箔であり、前記メッキ層の最上層が金メッキ層または銀メッキ層であることを特徴とするものである。 The invention described in claim 4 of the present invention is that in claim 1 or 3, the conductor layer is a copper foil, and the uppermost layer of the plating layer is a gold plating layer or a silver plating layer. It is a feature.
また、本発明の請求項５に記載された発明は、請求項３において、前記半導体発光素子を搭載した絶縁基板の一方の面の上には、封止樹脂が形成されており、前記封止樹脂は、前記半導体発光素子、前記導体層の一部および前記非貫通溝の非貫通部を覆っていることを特徴とするものである。 According to a fifth aspect of the present invention, in the third aspect, a sealing resin is formed on one surface of the insulating substrate on which the semiconductor light emitting element is mounted. The resin covers the semiconductor light emitting element, a part of the conductor layer, and a non-penetrating portion of the non-penetrating groove .
また、本発明の請求項６に記載された発明は、請求項１〜請求項５のいずれかにおいて、前記半導体発光素子が、ＬＥＤ素子であることを特徴とするものである。 Moreover, the invention described in claim 6 of the present invention is characterized in that, in any of claims 1 to 5, the semiconductor light emitting element is an LED element .
Claims (6)
前記電極部は前記絶縁基板の中で繋がっており、且つ、メッキ層が形成されていることを特徴とする請求項１に記載の半導体発光装置。 Further, on the surface of the insulating substrate where the intermediate conductor layer is exposed, an electrode portion is formed between the pair of intermediate conductor layers,
2. The semiconductor light emitting device according to claim 1, wherein the electrode portion is connected in the insulating substrate, and a plating layer is formed .
前記封止樹脂は、前記半導体発光素子、前記導体層の一部および前記非貫通溝の非貫通部を覆っていることを特徴とする請求項３に記載の半導体発光装置。The semiconductor light-emitting device according to claim 3, wherein the sealing resin covers the semiconductor light-emitting element, a part of the conductor layer, and a non-penetrating portion of the non-penetrating groove.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007339330A JP2009164176A (en) | 2007-12-28 | 2007-12-28 | Semiconductor light-emitting apparatus |
| KR20080129294A KR20090072969A (en) | 2007-12-28 | 2008-12-18 | Semiconductor light-emitting device |
| CN 200810185048 CN101471415B (en) | 2007-12-28 | 2008-12-26 | Semiconductor light-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007339330A JP2009164176A (en) | 2007-12-28 | 2007-12-28 | Semiconductor light-emitting apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009164176A JP2009164176A (en) | 2009-07-23 |
| JP2009164176A5 true JP2009164176A5 (en) | 2012-02-02 |
Family
ID=40828655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007339330A Pending JP2009164176A (en) | 2007-12-28 | 2007-12-28 | Semiconductor light-emitting apparatus |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2009164176A (en) |
| KR (1) | KR20090072969A (en) |
| CN (1) | CN101471415B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6219586B2 (en) | 2012-05-09 | 2017-10-25 | ローム株式会社 | Semiconductor light emitting device |
| KR101974354B1 (en) | 2013-02-14 | 2019-05-02 | 삼성전자주식회사 | Light emitting device package and method of manufacturing the same |
| JP2017076809A (en) * | 2016-12-05 | 2017-04-20 | 大日本印刷株式会社 | Lead frame with resin, semiconductor device, and lighting device |
| CN108807652B (en) | 2017-04-28 | 2023-03-21 | 日亚化学工业株式会社 | Light emitting device |
| KR101971436B1 (en) * | 2017-12-22 | 2019-04-23 | 주식회사 에이유이 | COB type LED package capable of top view and side view mounting and manufacturing method thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3447139B2 (en) * | 1995-03-06 | 2003-09-16 | 株式会社シチズン電子 | Chip type light emitting diode |
| JP3797636B2 (en) * | 1997-02-21 | 2006-07-19 | シチズン電子株式会社 | Surface mount type light emitting diode and manufacturing method thereof |
| JP2000036621A (en) * | 1998-07-16 | 2000-02-02 | Shichizun Denshi:Kk | Electrode structure of side-surface electronic component |
| JP3886306B2 (en) * | 1999-10-13 | 2007-02-28 | ローム株式会社 | Chip-type semiconductor light-emitting device |
| CN1377045A (en) * | 2001-03-27 | 2002-10-30 | 佳邦科技股份有限公司 | Surface adhered end electrode for over-current protecting element and its preparing process |
| JP3939145B2 (en) * | 2001-12-18 | 2007-07-04 | シャープ株式会社 | Side-emitting surface-mount light-emitting diode |
-
2007
- 2007-12-28 JP JP2007339330A patent/JP2009164176A/en active Pending
-
2008
- 2008-12-18 KR KR20080129294A patent/KR20090072969A/en not_active Application Discontinuation
- 2008-12-26 CN CN 200810185048 patent/CN101471415B/en not_active Expired - Fee Related
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