JP3447139B2 - Chip type light emitting diode - Google Patents

Chip type light emitting diode

Info

Publication number
JP3447139B2
JP3447139B2 JP04530895A JP4530895A JP3447139B2 JP 3447139 B2 JP3447139 B2 JP 3447139B2 JP 04530895 A JP04530895 A JP 04530895A JP 4530895 A JP4530895 A JP 4530895A JP 3447139 B2 JP3447139 B2 JP 3447139B2
Authority
JP
Japan
Prior art keywords
light emitting
emitting diode
type light
chip type
plated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP04530895A
Other languages
Japanese (ja)
Other versions
JPH08242019A (en
Inventor
廣彦 石井
Original Assignee
株式会社シチズン電子
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Filing date
Publication date
Application filed by 株式会社シチズン電子 filed Critical 株式会社シチズン電子
Priority to JP04530895A priority Critical patent/JP3447139B2/en
Publication of JPH08242019A publication Critical patent/JPH08242019A/en
Application granted granted Critical
Publication of JP3447139B2 publication Critical patent/JP3447139B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • H05K3/3431Leadless components

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  • Led Device Packages (AREA)

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、チップ型発光ダイオー
ドに係り、特にチップ型発光ダイオードの実装基板に対
して平行に発光するようにLED素子が実装されてなる
チップ型発光ダイオードに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chip type light emitting diode, and more particularly to a chip type light emitting diode in which LED elements are mounted so as to emit light in parallel to a mounting substrate of the chip type light emitting diode.

【0002】[0002]

【従来の技術】従来、この種のチップ型発光ダイオード
1としては、図4及び図5に示したようなものが知られ
ている(実開平4−65465号公報参照)。このチッ
プ型発光ダイオード1は、直方体形状のプラスチック製
絶縁基板2の両側面にメッキ配線による電極3,4が形
成されている。これらの電極3,4は絶縁基板2の前後
側へも回り込むように断面略コの字状に形成されてお
り、一方側の電極3の上面にはLED素子5が銀ペース
ト等によって固定され、さらにその表面が透光性樹脂6
によって封止された構造となっている。
2. Description of the Related Art Conventionally, as the chip type light emitting diode 1 of this type, ones shown in FIGS. 4 and 5 are known (see Japanese Utility Model Laid-Open No. 4-65465). In this chip type light emitting diode 1, electrodes 3 and 4 are formed by plating wiring on both sides of a rectangular parallelepiped plastic insulating substrate 2. These electrodes 3 and 4 are formed in a substantially U-shaped cross section so as to wrap around the front and rear sides of the insulating substrate 2, and the LED element 5 is fixed to the upper surface of the electrode 3 on one side by silver paste or the like. Further, the surface of the transparent resin 6
The structure is sealed by.

【0003】このような構造からなるチップ型発光ダイ
オード1は、実装用基板7に対して平行に発光するよう
にマウントされ、例えば図5にも示したように、実装用
基板7に形成されている配線パターン8,9上に半田ペ
ースト10を塗布しておき、その上に上記両側面の電極
3,4の端面11,12をそれぞれ乗せ、配線パターン
8,9に電極3,4の端面11,12を半田付けするこ
とでチップ型発光ダイオード1を固定するようにしてい
た。
The chip type light emitting diode 1 having such a structure is mounted so as to emit light in parallel to the mounting substrate 7, and is formed on the mounting substrate 7 as shown in FIG. 5, for example. The solder paste 10 is applied on the wiring patterns 8 and 9 in advance, and the end surfaces 11 and 12 of the electrodes 3 and 4 on the both side surfaces are placed on the wiring pastes 8 and 9, respectively, and the end surfaces 11 of the electrodes 3 and 4 are placed on the wiring patterns 8 and 9. , 12 were soldered to fix the chip type light emitting diode 1.

【0004】[0004]

【発明が解決しようとする課題】ところで、上述した従
来構造のチップ型発光ダイオード1にあっては、実装用
基板7にマウントしたときに半田付け不良を起こす虞れ
があった。これは、図5に示したように電極3,4を形
成するメッキ配線が銅箔層18、ニッケルメッキ層1
9、金メッキ層13の3層で構成されるが、その端面1
1,12に銅箔層18、ニッケルメッキ層19が露出し
てしまうために半田の濡れ性が悪くなり、半田が電極
3,4の端面11,12から金メッキ層13の表面側に
回り込めず、半田が十分に乗らない虞れがあったからで
ある。
By the way, in the chip type light emitting diode 1 having the above-mentioned conventional structure, there is a possibility that soldering failure may occur when mounted on the mounting substrate 7. As shown in FIG. 5, the plating wiring forming the electrodes 3 and 4 is the copper foil layer 18 and the nickel plating layer 1.
9. It is composed of three layers of gold plating layer 13, and its end face 1
Since the copper foil layer 18 and the nickel plating layer 19 are exposed at 1 and 12, the solder wettability deteriorates, and the solder cannot flow from the end faces 11 and 12 of the electrodes 3 and 4 to the surface side of the gold plating layer 13. This is because there is a risk that solder may not be sufficiently applied.

【0005】即ち、チップ型発光ダイオード1の製造過
程において、プラスチック絶縁基板2は、図6に示した
ように大きな基板14からの多数個取りやプラスチック
成形金型による多数個取りを行ない、メッキ配線による
電極3,4の形成やLED素子5の実装、及び透明性樹
脂6による封止工程を完了したのちに、ダイシングマシ
ンなどでカットライン15に沿って切断し、一つ一つの
チップに分割する。その結果、図4に示したように実装
用基板7にマウントした状態では、チップ型発光ダイオ
ード1の上面16と下面17にカット面があらわれるこ
とになり、同様に電極3,4の各端面11,12もメッ
キ配線の断面があらわれることになる。そして、メッキ
配線を構成する下地の銅箔層18、ニッケルメッキ層1
9及び表地の金メッキ層13の断面が露出してしまい、
特に金メッキ層13の厚みが非常に薄いために金メッキ
層13の断面と半田との接触面積が小さく、半田の濡れ
性が著しく低下してしまう虞れがあった。
That is, in the process of manufacturing the chip type light emitting diode 1, as shown in FIG. 6, the plastic insulating substrate 2 is obtained by taking a large number of pieces from a large substrate 14 or a large number of pieces using a plastic molding die, and plating wiring. After the formation of the electrodes 3 and 4 by the above, the mounting of the LED element 5, and the sealing process by the transparent resin 6 are completed, it is cut along a cut line 15 by a dicing machine or the like, and divided into individual chips. . As a result, when mounted on the mounting substrate 7 as shown in FIG. 4, cut surfaces appear on the upper surface 16 and the lower surface 17 of the chip type light emitting diode 1, and similarly, the end surfaces 11 of the electrodes 3 and 4 are formed. , 12 also shows the cross section of the plated wiring. Then, the underlying copper foil layer 18 and the nickel plating layer 1 constituting the plated wiring
9 and the cross section of the gold plating layer 13 of the outer material are exposed,
In particular, since the gold plating layer 13 is very thin, the contact area between the cross section of the gold plating layer 13 and the solder is small, and the wettability of the solder may be significantly reduced.

【0006】そこで本発明は、実装用基板上にチップ型
発光ダイオードを半田付けする際の半田の濡れ性を向上
し、半田が電極の表面側にも回り込み易くして半田付け
不良を無くすことである。
Therefore, the present invention improves the wettability of the solder when soldering the chip type light emitting diode onto the mounting substrate, and makes it easy for the solder to reach the surface side of the electrode, thereby eliminating defective soldering. is there.

【0007】[0007]

【課題を解決するための手段】即ち、本発明に係るチッ
プ型発光ダイオードは、メッキ配線による電極が形成さ
れた絶縁基板上にLED素子を実装し、このLED素子
の表面を透光性樹脂にて封止すると共に、実装用基板の
配線パターン上に半田付けされる上記電極の端面に再度
メッキを施し、メッキ配線の端面を被覆したことを特徴
とする。
That is, in a chip type light emitting diode according to the present invention, an LED element is mounted on an insulating substrate having electrodes formed by plated wiring, and the surface of the LED element is made of a transparent resin. The end face of the electrode to be soldered on the wiring pattern of the mounting substrate is plated again to cover the end face of the plated wiring.

【0008】また、本発明に係るチップ型発光ダイオー
ドの電極を形成しているメッキ配線は、下地がニッケル
或いは銅とニッケルとの層であり、表地が金または銀で
あることを特徴とする。
Further, the plated wiring forming the electrodes of the chip type light emitting diode according to the present invention is characterized in that the base is a layer of nickel or copper and nickel, and the outer material is gold or silver.

【0009】[0009]

【作用】上述の手段によれば、実装用基板の配線パター
ン上に半田ペーストを塗布し、その上にチップ型発光ダ
イオードの電極の端面を載置すると、電極の端面に被覆
されたメッキと半田ペーストとの接触面積が大きくな
る。その結果、半田の濡れ性が良くなり、半田が電極の
表面側にも回り込み易くなって半田の乗りが良くなり接
合が確実となる。
According to the above-mentioned means, when the solder paste is applied on the wiring pattern of the mounting substrate and the end surface of the electrode of the chip type light emitting diode is placed thereon, the plating and the solder coated on the end surface of the electrode are mounted. The contact area with the paste increases. As a result, the wettability of the solder is improved, the solder is more likely to reach the surface side of the electrode, the solder is ridden well, and the joining is ensured.

【0010】[0010]

【実施例】以下添付図面に基づいて本発明に係るチップ
型発光ダイオードの実施例を詳細に説明する。図1乃至
図3は、本発明に係るチップ型発光ダイオード20の一
実施例を示したものである。基本的には従来のものと同
様に、直方体形状のプラスチック製絶縁基板2の両側面
にメッキ配線による電極3,4が形成されている。この
電極3,4は前後側へも回り込むように形成され、一方
側の電極3の上面にはLED素子5が銀ペースト等の導
電性接着剤によって固定される。このLED素子5と他
方側の電極4とは金及びアルミなどのワイヤ21によっ
て電気的に接続されており、更に、LED素子5とワイ
ヤ21を保護するためにその表面が透光性樹脂6によっ
て封止された構造となっている。また、両側面の電極
3,4を形成するメッキ配線も上述の例と同様に3層か
らなり、下地に銅箔層18とニッケルメッキ層19が、
表地に薄膜の金メッキ層13が施されている。
Embodiments of the chip type light emitting diode according to the present invention will be described in detail below with reference to the accompanying drawings. 1 to 3 show an embodiment of a chip type light emitting diode 20 according to the present invention. Basically, similar to the conventional one, electrodes 3 and 4 are formed by plating wiring on both sides of a rectangular parallelepiped plastic insulating substrate 2. The electrodes 3 and 4 are formed so as to wrap around to the front and rear sides, and the LED element 5 is fixed to the upper surface of the electrode 3 on one side by a conductive adhesive such as silver paste. The LED element 5 and the electrode 4 on the other side are electrically connected by a wire 21 such as gold or aluminum. Further, the surface of the LED element 5 is protected by a translucent resin 6 to protect the LED element 5 and the wire 21. It has a sealed structure. Further, the plating wirings for forming the electrodes 3 and 4 on both side surfaces are also composed of three layers as in the above-mentioned example, and the copper foil layer 18 and the nickel plating layer 19 are formed on the base,
A thin gold plating layer 13 is applied to the outer material.

【0011】上述の構成よりなるチップ型発光ダイオー
ド20も、その製造過程においては図6に示したような
大きな基板14からの多数個取りやプラスチック成形金
型による多数個取りが行われ、ダイシングマシンなどで
カットライン15に沿って一つ一つのチップに切断され
るために、実装用基板7にマウントした状態では、チッ
プ型発光ダイオード20の上面16と下面17にカット
面があらわれる。その結果、電極3,4の各端面11,
12にも上記メッキ配線の断面があらわれ、半田の付き
にくい銅箔層18及びニッケルメッキ層19の断面が出
現することになる。
Also in the manufacturing process of the chip type light emitting diode 20 having the above-mentioned structure, a large number of pieces are picked up from a large substrate 14 as shown in FIG. Since the chips are cut into individual chips along the cut line 15 by the above, the cut surfaces appear on the upper surface 16 and the lower surface 17 of the chip type light emitting diode 20 in a state where the chips are mounted on the mounting substrate 7. As a result, the end faces 11 of the electrodes 3 and 4,
The section of the plated wiring also appears in 12, and the sections of the copper foil layer 18 and the nickel plated layer 19 which are hard to be soldered appear.

【0012】本実施例では、電極3,4の端面11,1
2に再度金メッキを施すことで、銅箔層18、ニッケル
メッキ層19の端面を金メッキ膜22,23で被覆し、
半田の濡れ性を向上させるものである。銅箔層18、ニ
ッケルメッキ層19の端面だけに金メッキ膜22,23
を付ける方法として、置換タイプの無電解メッキ法があ
る。これは上述の実施例では銅箔層18やニッケルメッ
キ層19が溶けて銅及びニッケルの原子と金の原子とが
入れ替わり、図2に示したように銅箔層18やニッケル
メッキ層19の端面だけに金メッキ膜22,23が付
き、電極の表地を形成している金メッキ層13やその端
面、及びプラスチック絶縁基板2や透光性樹脂6などの
非金属部には上記の金メッキ膜が付かない。
In this embodiment, the end faces 11, 1 of the electrodes 3, 4 are
2 is gold-plated again to cover the end faces of the copper foil layer 18 and the nickel-plated layer 19 with gold-plated films 22 and 23,
It improves the wettability of the solder. Gold plating films 22 and 23 are formed only on the end faces of the copper foil layer 18 and the nickel plating layer 19, respectively.
There is a substitution type electroless plating method as a method of attaching. In the above-described embodiment, this is because the copper foil layer 18 and the nickel plating layer 19 are melted and the atoms of copper and nickel are exchanged with the atoms of gold, and the end faces of the copper foil layer 18 and the nickel plating layer 19 are changed as shown in FIG. The gold-plated films 22 and 23 are attached only to the above, and the gold-plated layer 13 forming the outer surface of the electrode and its end surface, and the non-metal part such as the plastic insulating substrate 2 and the translucent resin 6 are not attached with the above gold-plated film. .

【0013】従って、このように電極3,4の端面1
1,12に再度金メッキ膜22,23を形成した場合に
は、メッキ配線を構成する銅箔層18及びニッケルメッ
キ層19の断面が金メッキ膜22,23によって被覆さ
れるために、電極3,4の端面11,12の全体が金メ
ッキで形成されることになる。そのため、このチップ型
発光ダイオード20を実装用基板7にマウントした場合
には、図3に示したように配線パターン8,9の上に塗
布された半田ペースト10と電極3,4の端面を構成す
る金メッキ膜22,23及び金メッキ層13の端面との
接触面積が大きくなることから半田の濡れ性が飛躍的に
向上し、半田が電極3,4の表面側にも回り込み易くな
って半田の乗りが良くなり接合が確実となる。
Therefore, the end faces 1 of the electrodes 3 and 4 are thus formed.
When the gold-plated films 22 and 23 are formed again on the electrodes 1 and 12, since the cross sections of the copper foil layer 18 and the nickel-plated layer 19 that form the plated wiring are covered with the gold-plated films 22 and 23, the electrodes 3, 4 are formed. The entire end surfaces 11 and 12 of the above are formed by gold plating. Therefore, when the chip type light emitting diode 20 is mounted on the mounting substrate 7, the solder paste 10 applied on the wiring patterns 8 and 9 and the end surfaces of the electrodes 3 and 4 are formed as shown in FIG. Since the contact area with the end faces of the gold-plated films 22 and 23 and the gold-plated layer 13 is increased, the wettability of the solder is remarkably improved, and the solder easily wraps around the surface side of the electrodes 3 and 4, so that the solder can be ridden. And the joining is reliable.

【0014】なお、上記金メッキによる被覆は無電解メ
ッキ法のみでなく、電解メッキ法でも行うことができ
る。この電解メッキ法では、プラスチック絶縁基板2や
透光性樹脂6には金メッキは付かないが、電極3,4の
端面11,12だけでなく表地の金メッキ層13にも重
ねて金メッキが付くことになる。また、上記実施例では
電極3,4の端面11,12に金メッキを施した場合に
ついて説明したが、本発明では金メッキのみに限定され
るものではなく、錫メッキや半田メッキなど半田濡れ性
に優れるものであれば本発明に含まれるのは勿論であ
る。更に、上述の実施例ではメッキ配線の下地が銅箔層
18とニッケルメッキ層19、表地が金メッキ層13で
ある場合について説明したが、本発明では下地層や表地
層を構成する金属の種類や層の数には何ら制限を受けな
いものであり、例えば下地に銅又はニッケルの一方だ
け、表地に銀を用いた場合にも適用される。
The gold plating can be performed not only by electroless plating but also by electrolytic plating. In this electrolytic plating method, the plastic insulating substrate 2 and the light-transmissive resin 6 are not gold-plated, but not only the end surfaces 11 and 12 of the electrodes 3 and 4 but also the gold-plated layer 13 on the outer surface are gold-plated. Become. Further, in the above embodiment, the case where the end faces 11 and 12 of the electrodes 3 and 4 are plated with gold has been described, but the present invention is not limited to gold plating, and is excellent in solder wettability such as tin plating and solder plating. Of course, the present invention includes the present invention. Further, in the above-described embodiment, the case where the base of the plated wiring is the copper foil layer 18 and the nickel plated layer 19 and the outer material is the gold plated layer 13 has been described. However, in the present invention, the kind of metal forming the lower layer or the outer material layer and The number of layers is not limited in any way, and is also applicable to the case where only one of copper and nickel is used as the base and silver is used as the outer material.

【0015】[0015]

【発明の効果】以上説明したように、本発明に係るチッ
プ型発光ダイオードによれば、メッキ配線による電極の
端面を再度メッキで被覆する構成としたから、実装用基
板上にチップ型発光ダイオードを半田付けする際、上記
メッキと半田との濡れ性が向上し、半田が電極の端面か
ら表面側に回り込み易くなって半田の乗りがよくなり半
田と電極との接合が確実となって、従来のように半田付
け不良を起こすといったことがない。
As described above, according to the chip type light emitting diode of the present invention, since the end surface of the electrode by the plated wiring is covered with plating again, the chip type light emitting diode is mounted on the mounting substrate. When soldering, the wettability between the above-mentioned plating and the solder is improved, the solder easily goes around from the end face of the electrode to the surface side, the solder gets on well, and the solder and the electrode are securely joined together. It does not cause soldering failure.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係るチップ型発光ダイオードの一実施
例を示す斜視図である。
FIG. 1 is a perspective view showing an embodiment of a chip type light emitting diode according to the present invention.

【図2】チップ型発光ダイオードの電極を示す図1中A
−A線断面図である。
FIG. 2 A in FIG. 1 showing electrodes of a chip type light emitting diode
FIG.

【図3】チップ型発光ダイオードの電極の端面に半田が
付いている様子を示す図1中A−A線断面図である。
FIG. 3 is a cross-sectional view taken along the line AA in FIG. 1, showing a state where solder is attached to the end faces of the electrodes of the chip type light emitting diode.

【図4】従来におけるチップ型発光ダイオードの一例を
示す斜視図である。
FIG. 4 is a perspective view showing an example of a conventional chip type light emitting diode.

【図5】チップ型発光ダイオードの電極を示す図4中B
−B線断面図である。
FIG. 5B in FIG. 4 showing electrodes of a chip type light emitting diode.
It is a -B line sectional view.

【図6】チップ型発光ダイオードを多数個取りするため
の絶縁基板を示す正面図である。
FIG. 6 is a front view showing an insulating substrate for taking a large number of chip type light emitting diodes.

【符号の説明】[Explanation of symbols]

2 絶縁基板 3 電極 4 電極 5 LED素子 6 透光性樹脂 7 実装用基板 8 配線パターン 9 配線パターン 10 半田ペースト 11 電極の端面 12 電極の端面 20 チップ型発光ダイオード 22 金メッキ膜 23 金メッキ膜 2 insulating substrate 3 electrodes 4 electrodes 5 LED element 6 Translucent resin 7 Mounting board 8 wiring patterns 9 wiring patterns 10 Solder paste 11 Electrode end face 12 electrode end face 20 chip type light emitting diode 22 Gold plated film 23 Gold plated film

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 メッキ配線による電極が形成された絶縁
基板上にLED素子を実装し、このLED素子の表面を
透光性樹脂にて封止すると共に、実装用基板の配線パタ
ーン上に半田付けされる上記電極の端面にメッキ配線の
端面があらわれてなるチップ型発光ダイオードにおい
て、 上記電極の端面にメッキを施し、メッキ配線の端面を被
覆したことを特徴とするチップ型発光ダイオード。
1. An LED element is mounted on an insulating substrate on which electrodes are formed by plating wiring, the surface of the LED element is sealed with a translucent resin, and soldering is performed on the wiring pattern of the mounting substrate. A chip type light emitting diode in which an end surface of a plated wiring appears on an end surface of the electrode, wherein the end surface of the electrode is plated to cover the end surface of the plated wiring.
【請求項2】 上記電極を形成するメッキ配線は、下地
がニッケル或いは銅とニッケルとの層であり、表地が金
または銀であることを特徴とするチップ型発光ダイオー
ド。
2. The chip type light emitting diode, wherein the plated wiring forming the electrode has a base layer of nickel or a layer of copper and nickel and a surface material of gold or silver.
JP04530895A 1995-03-06 1995-03-06 Chip type light emitting diode Expired - Lifetime JP3447139B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP04530895A JP3447139B2 (en) 1995-03-06 1995-03-06 Chip type light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04530895A JP3447139B2 (en) 1995-03-06 1995-03-06 Chip type light emitting diode

Publications (2)

Publication Number Publication Date
JPH08242019A JPH08242019A (en) 1996-09-17
JP3447139B2 true JP3447139B2 (en) 2003-09-16

Family

ID=12715695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04530895A Expired - Lifetime JP3447139B2 (en) 1995-03-06 1995-03-06 Chip type light emitting diode

Country Status (1)

Country Link
JP (1) JP3447139B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009164176A (en) * 2007-12-28 2009-07-23 Stanley Electric Co Ltd Semiconductor light-emitting apparatus
JP2011216506A (en) * 2010-03-31 2011-10-27 Hitachi Consumer Electronics Co Ltd Led package and led package mounting structure
JP6553143B2 (en) * 2012-05-09 2019-07-31 ローム株式会社 Semiconductor light emitting device
DE102013110733A1 (en) 2013-09-27 2015-04-02 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

Also Published As

Publication number Publication date
JPH08242019A (en) 1996-09-17

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