JPH0878732A - Chip type light emitting diode and its manufacturing method - Google Patents
Chip type light emitting diode and its manufacturing methodInfo
- Publication number
- JPH0878732A JPH0878732A JP6207639A JP20763994A JPH0878732A JP H0878732 A JPH0878732 A JP H0878732A JP 6207639 A JP6207639 A JP 6207639A JP 20763994 A JP20763994 A JP 20763994A JP H0878732 A JPH0878732 A JP H0878732A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting element
- insulating substrate
- electrodes
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、チップ型発光ダイオー
ドに関し、特に信頼性の向上を図るための構造及び製造
方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chip type light emitting diode, and more particularly to a structure and a manufacturing method for improving reliability.
【０００２】[0002]
【従来の技術】発光ダイオード（以下ＬＥＤ）は動作電
圧が低く、応答速度が速く、かつ動作寿命が長い等の利
点があるので、各種電気機器の表示ランプとして使用さ
れている。特に、近年では、電気機器の小型化の要求に
応じるため表面実装用のチップ型ＬＥＤが使用されてい
る。2. Description of the Related Art A light emitting diode (hereinafter referred to as an LED) has advantages such as a low operating voltage, a high response speed, and a long operating life. Particularly, in recent years, surface mount chip type LEDs have been used to meet the demand for miniaturization of electric devices.
【０００３】一般にチップ型ＬＥＤは、図６に示すよう
に、絶縁基板１の表面から裏面に回り込むように形成さ
れた一組の電極２，３と、この一組の電極の一方２に搭
載された発光素子４と、この発光素子４と他方の電極３
とを接続する金属ワイヤ５と、を透明または半透明の樹
脂で封止した樹脂封止部６とから構成されている。以上
のような構成のチップ型ＬＥＤがプリント基板に実装さ
れ、その点滅により各種電気機器のスイッチのＯＮ／Ｏ
ＦＦや、各種インジケータの表示を行なっている。In general, a chip type LED is mounted on a pair of electrodes 2 and 3 formed so as to extend from the front surface to the back surface of an insulating substrate 1 and one of the pair of electrodes 2 as shown in FIG. Light emitting element 4, and this light emitting element 4 and the other electrode 3
And a resin sealing portion 6 obtained by sealing a metal wire 5 for connecting with a metal wire 5 with a transparent or semitransparent resin. The chip type LED configured as described above is mounted on a printed circuit board, and its blinking causes ON / O of switches of various electric devices.
The FF and various indicators are displayed.
【０００４】[0004]
【発明が解決しようとする課題】ところで、上述のチッ
プ型ＬＥＤの電極２，３は、発光素子４の搭載及び金属
ワイヤ５の接続を行うため金が使用される。金は化学的
に安定した金属であるため樹脂封止に使用される樹脂と
の相性が悪く電極２，３と樹脂封止部６との密着性に問
題があった。By the way, gold is used for mounting the light emitting element 4 and connecting the metal wire 5 to the electrodes 2 and 3 of the above-mentioned chip type LED. Since gold is a chemically stable metal, it has poor compatibility with the resin used for resin sealing, and there is a problem in the adhesion between the electrodes 2 and 3 and the resin sealing portion 6.
【０００５】特に、樹脂封止部６の材料として、その機
能上、光を外部へ効率よく放射することが要請されるの
で、エポキシ樹脂などの透光性の良好な合成樹脂が用い
られるが、透光性を優先させた合成樹脂では、密着性、
耐湿性など高めるために混入される成分が限定されるた
め、透光性を必要としない他の半導体装置、例えばＩＣ
等、に使用されるものに比較して密着性、耐湿性などが
低くなる傾向にある。Particularly, as the material of the resin sealing portion 6, since it is required to efficiently radiate light to the outside due to its function, a synthetic resin having a good light-transmitting property such as epoxy resin is used. With a synthetic resin that prioritizes translucency, adhesion,
Other semiconductor devices that do not require translucency, such as ICs, are limited because the components that are mixed in to increase moisture resistance are limited.
Etc., the adhesiveness, moisture resistance, etc. tend to be lower than those used for the above.
【０００６】そのため、上述のチップ型ＬＥＤを長時間
使用した場合、大気に含まれる水分がエポキシ樹脂に吸
湿され、エポキシ樹脂と電極との密着性が低下し、金属
ワイヤが切れたり電極から剥離するという問題も生じて
いた。本発明はかかる問題点に鑑み、密着性が良好なチ
ップ型ＬＥＤの構造と製造方法を提供することを目的と
している。Therefore, when the above-mentioned chip type LED is used for a long time, moisture contained in the atmosphere is absorbed by the epoxy resin, the adhesion between the epoxy resin and the electrode is lowered, and the metal wire is broken or peeled from the electrode. There was also a problem. The present invention has been made in view of such problems, and an object thereof is to provide a structure and a manufacturing method of a chip-type LED having good adhesion.
【０００７】[0007]
【課題を解決するための手段】本発明は、上記の目的を
達成するために次のような構成をとる。すなわち、請求
項１のチップ型ＬＥＤは、絶縁基板の表面から裏面に回
り込むように形成された一組の電極と、前記電極の一方
に搭載された発光素子と、前記発光素子と前記電極の他
方とを電気的に接続させるための金属ワイヤと、前記発
光素子及び前記金属ワイヤとを封止する樹脂封止部有す
るチップ型発光ダイオードにおいて、前記一組の電極が
半田メッキされていることを特徴とするものである。The present invention has the following constitution in order to achieve the above object. That is, the chip type LED according to claim 1 is a set of electrodes formed so as to wrap around from the front surface to the back surface of the insulating substrate, a light emitting element mounted on one of the electrodes, and the other of the light emitting element and the electrode. In a chip type light emitting diode having a metal wire for electrically connecting to each other and a resin sealing portion that seals the light emitting element and the metal wire, the set of electrodes is solder-plated. It is what
【０００８】請求項２のチップ型ＬＥＤの製造方法は、
一定間隔でかつ平行に設けられた複数個のスリット状の
貫通孔を有する第１の板状絶縁基板の表面から前記貫通
孔の内壁をわたり裏面に達する対向電極パターンを形成
する工程と、前記対向電極パターンの一方に発光素子を
搭載するとともに、発光素子と他方の電極パターンとを
金属ワイヤにて電気的に接続する工程と、第２の板状絶
縁基板の表面に塗布され半田部上に前記第１の板状絶縁
基板の貫通孔が位置するようにを重ね合わせた後、両基
板を加熱し第１の板状絶縁基板の電極パターンに半田メ
ッキを施す工程と、前記第１の板状絶縁基板上の発光素
子及び金属ワイヤを樹脂封止する工程と、前記第１の板
状絶縁基板を切断する工程とを有することを特徴とする
ものである。A manufacturing method of a chip type LED according to claim 2 is
Forming a counter electrode pattern across the inner wall of the through hole from the front surface of the first plate-shaped insulating substrate having a plurality of slit-shaped through holes provided in parallel at regular intervals and reaching the back surface; The step of mounting the light emitting element on one of the electrode patterns and electrically connecting the light emitting element and the other electrode pattern with a metal wire; After stacking the first plate-shaped insulating substrate so that the through-holes are positioned, heating both the substrates to perform solder plating on the electrode pattern of the first plate-shaped insulating substrate; The method is characterized by including a step of resin-sealing the light emitting element and the metal wire on the insulating substrate, and a step of cutting the first plate-shaped insulating substrate.
【０００９】[0009]
【作用】本発明では、発光素子の搭載及び金属ワイヤの
接続が完了した一組の電極に半田メッキすることで樹脂
封止部と電極の密着性を向上させると共に、半田により
金属ワイヤと電極とをより強固に接続することができる
ので金属ワイヤの切れや剥離を防止することができる。In the present invention, the adhesion between the resin-sealed portion and the electrodes is improved by solder-plating the set of electrodes on which the light-emitting elements are mounted and the metal wires are connected, and the metal wires and electrodes are soldered together. Since it can be connected more firmly, it is possible to prevent breakage and peeling of the metal wire.
【００１０】また、本発明の製造方法によれば、従来の
製造方法に簡単な工程を付加するだけで一度に多数の電
極パターンに半田メッキを施すことができるので、量産
に適している。Further, according to the manufacturing method of the present invention, solder plating can be applied to a large number of electrode patterns at a time by simply adding a simple step to the conventional manufacturing method, which is suitable for mass production.
【００１１】[0011]
【実施例】以下、本発明について図面に示す実施例に基
づいて詳述する。尚、従来と同一部分や相当部分には同
一の符号を付している。図１は、本発明のチップ型ＬＥ
Ｄを示しておりその構造は、絶縁基板１の表面から裏面
に回り込むように形成された一組の電極２，３と、前記
電極の一方２に搭載された発光素子４と、この発光素子
４と他方の電極３とを電気的に接続する金属ワイヤ５
と、発光素子４及び金属ワイヤ５を封止する樹脂封止部
６を有しており、一組の電極２，３には半田メッキ７
（斜線部）が施されている。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the embodiments shown in the drawings. Incidentally, the same reference numerals are given to the same or corresponding portions as in the conventional case. FIG. 1 shows a chip LE of the present invention.
The structure is shown by D, and the structure thereof includes a pair of electrodes 2 and 3 formed so as to wrap around from the front surface to the back surface of the insulating substrate 1, a light emitting element 4 mounted on one of the electrodes 2, and the light emitting element 4. And a metal wire 5 for electrically connecting the other electrode 3
And a resin encapsulation portion 6 for encapsulating the light emitting element 4 and the metal wire 5, and solder plating 7 is applied to the pair of electrodes 2 and 3.
(Shaded area) is applied.
【００１２】本発明によれば、電極２，３には半田メッ
キ７が施されているので、樹脂封止部と電極の密着性を
向上させると共に、金属ワイヤの切れや剥離を防止する
ことができる。次に本発明のチップ型ＬＥＤの製造方法
について説明する。まず、図２に示すように、アルミナ
や合成樹脂性等からなる第１の板状絶縁基板１１に一定
間隔でかつ平行な複数個のスリット状の貫通孔１２を設
ける。次に、第１の板状絶縁基板１１の表面から該貫通
孔１２の内壁をわたり裏面に達する金からなる対向電極
パターン１３，１４を形成する。そして、一方の電極パ
ターン１３にＧａＰ，ＧａＡｓ等からなる発光素子４を
搭載するとともに、発光素子４と他方の電極パターン１
４とを金からなる金属ワイヤ５にて電気的に接続する。According to the present invention, since the electrodes 2 and 3 are plated with the solder 7, it is possible to improve the adhesion between the resin-sealed portion and the electrodes and prevent the metal wires from being cut or peeled. it can. Next, a method for manufacturing the chip-type LED of the present invention will be described. First, as shown in FIG. 2, a plurality of slit-shaped through-holes 12 are provided in a first plate-shaped insulating substrate 11 made of alumina, synthetic resin, or the like at regular intervals and in parallel. Next, counter electrode patterns 13 and 14 made of gold are formed to extend from the surface of the first plate-shaped insulating substrate 11 across the inner wall of the through hole 12 to reach the back surface. Then, the light emitting element 4 made of GaP, GaAs or the like is mounted on the one electrode pattern 13, and the light emitting element 4 and the other electrode pattern 1 are mounted.
4 and 4 are electrically connected by a metal wire 5 made of gold.
【００１３】次に、図３に示すように、第２の板状絶縁
基板１５を用意し、該基板の表面にクリーム半田１６
を、第１の板状絶縁基板１１も設けられた貫通孔１２と
同一間隔となるように塗布する。次に、図４に示すよう
に、第２の板状絶縁基板１５のクリーム半田１６部と第
１の板状絶縁基板１１の貫通孔１２が位置合わせするよ
うに第２の板状絶縁基板１５上に第１の板状絶縁基板１
１を重ね合わせ、図示しないリフロー炉で加熱すること
で、クリーム半田１６が溶融し電極パターン１３，１４
を覆うようにに半田メッキを施すことができる。Next, as shown in FIG. 3, a second plate-shaped insulating substrate 15 is prepared, and cream solder 16 is provided on the surface of the substrate.
Are applied so that the first plate-shaped insulating substrate 11 and the through holes 12 provided also have the same intervals. Next, as shown in FIG. 4, the second plate-shaped insulating substrate 15 is aligned so that the cream solder 16 part of the second plate-shaped insulating substrate 15 and the through hole 12 of the first plate-shaped insulating substrate 11 are aligned with each other. First plate-shaped insulating substrate 1 on top
1 is piled up and heated in a reflow oven (not shown), so that the cream solder 16 is melted and the electrode patterns 13 and 14 are heated.
Can be plated with solder so as to cover.
【００１４】最後に、図５に示すように、第１の板状絶
縁基板１１上の発光素子４と金属ワイヤ５をエポキシ樹
脂からなる透光性樹脂１７にて封止を行った後、ライン
１８に沿って切断する。この切断工程によって、図１に
示した個別のチップ型ＬＥＤが完成する。Finally, as shown in FIG. 5, the light emitting element 4 and the metal wire 5 on the first plate-shaped insulating substrate 11 are sealed with a translucent resin 17 made of an epoxy resin, and then a line is formed. Cut along line 18. By this cutting step, the individual chip type LED shown in FIG. 1 is completed.
【００１５】[0015]
【発明の効果】本発明によれば、樹脂封止部と電極パタ
ーンの密着性を向上させると共に、金属ワイヤの切れや
剥離を防止することができる。また、本発明の製造方法
によれば、一度に多数の電極パターンに半田メッキを施
すことができるので、量産に適している。According to the present invention, it is possible to improve the adhesion between the resin-sealed portion and the electrode pattern and prevent the metal wire from breaking or peeling. Further, according to the manufacturing method of the present invention, solder plating can be applied to a large number of electrode patterns at one time, which is suitable for mass production.
【図１】本発明のチップ型ＬＥＤを示す斜視図。FIG. 1 is a perspective view showing a chip-type LED of the present invention.
【図２】第１の板状絶縁基板を示す平面図FIG. 2 is a plan view showing a first plate-shaped insulating substrate.
【図３】第２の板状絶縁基板を示す平面図。FIG. 3 is a plan view showing a second plate-shaped insulating substrate.
【図４】第１及び第２の板状絶縁基板を重ね合わせた状
態を示す平面図。FIG. 4 is a plan view showing a state in which first and second plate-shaped insulating substrates are stacked.
【図５】第１の板状絶縁基板の切断位置を示す平面図FIG. 5 is a plan view showing a cutting position of a first plate-shaped insulating substrate.
【図６】従来のチップ型ＬＥＤを示する。FIG. 6 shows a conventional chip-type LED.
１ 絶縁基板 ２，３ 電極 ４ 発光素子 ５ 金属ワイヤ ６ 樹脂封止部 ７ 半田メッキ 11 第１の板状絶縁基板 12 貫通孔 13,14 電極パターン 15 第２の板状絶縁基板 16 クリーム半田 17 透光性樹脂 1 Insulating Substrate 2, 3 Electrodes 4 Light Emitting Element 5 Metal Wire 6 Resin Sealing Part 7 Solder Plating 11 First Plate Insulating Substrate 12 Through Hole 13,14 Electrode Pattern 15 Second Plate Insulating Substrate 16 Cream Solder 17 Transparent Light-sensitive resin
Claims (2)
に形成された一組の電極と、前記電極の一方に搭載され
た発光素子と、前記発光素子と前記電極の他方とを電気
的に接続する金属ワイヤと、前記発光素子及び前記金属
ワイヤを封止する樹脂封止部を有するチップ型発光ダイ
オードにおいて、 前記一組の電極が半田メッキされているを特徴とするチ
ップ型発光ダイオード。1. A set of electrodes formed so as to wrap around from the front surface to the back surface of an insulating substrate, a light emitting element mounted on one of the electrodes, and the light emitting element and the other of the electrodes are electrically connected. A chip-type light-emitting diode having a metal wire and a light-emitting element and a resin encapsulation part for encapsulating the metal wire, wherein the set of electrodes are plated with solder.
のスリット状の貫通孔を有する第１の板状絶縁基板の表
面から前記貫通孔の内壁をわたり裏面に達する対向電極
パターンを形成する工程と、前記対向電極パターンの一
方に発光素子を搭載するとともに、発光素子と他方の電
極パターンとを金属ワイヤにて電気的に接続する工程
と、第２の板状絶縁基板の表面に塗布され半田部上に前
記第１の板状絶縁基板の貫通孔が位置するようにを重ね
合わせた後、両基板を加熱し第１の板状絶縁基板の電極
パターンに半田メッキを施す工程と、前記第１の板状絶
縁基板上の発光素子及び金属ワイヤを樹脂封止する工程
と、前記第１の板状絶縁基板を切断する工程とを有する
ことを特徴とするチップ型発光ダイオードの製造方法。2. A counter electrode pattern is formed which extends from the surface of a first plate-shaped insulating substrate having a plurality of slit-shaped through holes provided in parallel at regular intervals to reach the back surface across the inner wall of the through holes. A step of mounting a light emitting element on one of the counter electrode patterns and electrically connecting the light emitting element and the other electrode pattern with a metal wire; and applying the light emitting element to the surface of the second plate-shaped insulating substrate. Stacking so that the through holes of the first plate-like insulating substrate are located on the solder portion, heating both the substrates, and performing solder plating on the electrode pattern of the first plate-like insulating substrate; A method of manufacturing a chip type light emitting diode, comprising: a step of resin-sealing a light emitting element and a metal wire on a first plate-shaped insulating substrate; and a step of cutting the first plate-shaped insulating substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6207639A JPH0878732A (en) | 1994-08-31 | 1994-08-31 | Chip type light emitting diode and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6207639A JPH0878732A (en) | 1994-08-31 | 1994-08-31 | Chip type light emitting diode and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0878732A true JPH0878732A (en) | 1996-03-22 |
Family
ID=16543121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6207639A Pending JPH0878732A (en) | 1994-08-31 | 1994-08-31 | Chip type light emitting diode and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0878732A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6350631B1 (en) | 1999-05-27 | 2002-02-26 | Matsushita Electric Industrial Co., Ltd. | Electronic device, method of manufacturing the same, and apparatus for manufacturing the same |
| WO2007080742A1 (en) | 2006-01-16 | 2007-07-19 | Towa Corporation | Method of photoelement resin sealing/molding |
| JP2008153698A (en) * | 2008-03-07 | 2008-07-03 | Matsushita Electric Ind Co Ltd | Surface-mounting photoelectric conversion device |
| WO2008143201A1 (en) | 2007-05-17 | 2008-11-27 | Showa Denko K.K. | Semiconductor light-emitting device |
| US9865780B2 (en) | 2012-06-11 | 2018-01-09 | Cree, Inc. | LED package with encapsulant having planar surfaces |
| US10424702B2 (en) | 2012-06-11 | 2019-09-24 | Cree, Inc. | Compact LED package with reflectivity layer |
| US10468565B2 (en) | 2012-06-11 | 2019-11-05 | Cree, Inc. | LED package with multiple element light source and encapsulant having curved and/or planar surfaces |
-
1994
- 1994-08-31 JP JP6207639A patent/JPH0878732A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6350631B1 (en) | 1999-05-27 | 2002-02-26 | Matsushita Electric Industrial Co., Ltd. | Electronic device, method of manufacturing the same, and apparatus for manufacturing the same |
| US6440774B2 (en) | 1999-05-27 | 2002-08-27 | Matsushita Electric Industrial Co., Ltd. | Electronic device, method of manufacturing the same, and apparatus for manufacturing the same |
| WO2007080742A1 (en) | 2006-01-16 | 2007-07-19 | Towa Corporation | Method of photoelement resin sealing/molding |
| WO2008143201A1 (en) | 2007-05-17 | 2008-11-27 | Showa Denko K.K. | Semiconductor light-emitting device |
| JP2008153698A (en) * | 2008-03-07 | 2008-07-03 | Matsushita Electric Ind Co Ltd | Surface-mounting photoelectric conversion device |
| US9865780B2 (en) | 2012-06-11 | 2018-01-09 | Cree, Inc. | LED package with encapsulant having planar surfaces |
| US10424702B2 (en) | 2012-06-11 | 2019-09-24 | Cree, Inc. | Compact LED package with reflectivity layer |
| US10468565B2 (en) | 2012-06-11 | 2019-11-05 | Cree, Inc. | LED package with multiple element light source and encapsulant having curved and/or planar surfaces |
| US11424394B2 (en) | 2012-06-11 | 2022-08-23 | Creeled, Inc. | LED package with multiple element light source and encapsulant having curved and/or planar surfaces |
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